TWI340294B - Radiation sensitive resin composition, manufacturing method thereof and fabricating method of semiconductor device using the same - Google Patents
Radiation sensitive resin composition, manufacturing method thereof and fabricating method of semiconductor device using the sameInfo
- Publication number
- TWI340294B TWI340294B TW093102993A TW93102993A TWI340294B TW I340294 B TWI340294 B TW I340294B TW 093102993 A TW093102993 A TW 093102993A TW 93102993 A TW93102993 A TW 93102993A TW I340294 B TWI340294 B TW I340294B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- semiconductor device
- resin composition
- same
- sensitive resin
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
- 239000011342 resin composition Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
- C08L101/02—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003032339A JP4222850B2 (en) | 2003-02-10 | 2003-02-10 | Radiation-sensitive resin composition, method for producing the same, and method for producing a semiconductor device using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200422777A TW200422777A (en) | 2004-11-01 |
TWI340294B true TWI340294B (en) | 2011-04-11 |
Family
ID=32844335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093102993A TWI340294B (en) | 2003-02-10 | 2004-02-10 | Radiation sensitive resin composition, manufacturing method thereof and fabricating method of semiconductor device using the same |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070160927A1 (en) |
JP (1) | JP4222850B2 (en) |
KR (1) | KR20050109483A (en) |
CN (1) | CN100568098C (en) |
DE (1) | DE112004000257B4 (en) |
TW (1) | TWI340294B (en) |
WO (1) | WO2004070473A1 (en) |
Families Citing this family (13)
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JP4149306B2 (en) * | 2003-04-30 | 2008-09-10 | 東京応化工業株式会社 | Positive resist composition and resist pattern forming method |
JP4761055B2 (en) * | 2005-06-10 | 2011-08-31 | 信越化学工業株式会社 | Pattern formation method |
KR101348607B1 (en) * | 2006-02-14 | 2014-01-07 | 주식회사 동진쎄미켐 | Photoresist composition, thin film patterning method using the same, and method of fabricating liquid crystal display using the same |
WO2009020029A1 (en) * | 2007-08-09 | 2009-02-12 | Jsr Corporation | Radiosensitive resin composition |
KR101120177B1 (en) * | 2008-03-06 | 2012-02-27 | 주식회사 하이닉스반도체 | Method for Manufacturing Semiconductor Device |
US8822347B2 (en) * | 2009-04-27 | 2014-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wet soluble lithography |
JP5591560B2 (en) * | 2010-03-02 | 2014-09-17 | 株式会社ディスコ | Laser processing equipment |
JP5795481B2 (en) * | 2010-03-05 | 2015-10-14 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | Method for forming a photolithographic pattern |
JP5761175B2 (en) * | 2010-03-17 | 2015-08-12 | Jsr株式会社 | Radiation-sensitive resin composition and resist pattern forming method |
KR101907705B1 (en) * | 2010-10-22 | 2018-10-12 | 제이에스알 가부시끼가이샤 | Pattern-forming method and radiation-sensitive composition |
JP5850873B2 (en) * | 2012-07-27 | 2016-02-03 | 富士フイルム株式会社 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern formation method, and electronic device manufacturing method |
CN109298600B (en) * | 2017-07-25 | 2022-03-29 | 台湾永光化学工业股份有限公司 | Amplified I-line photoresist composition |
US11675267B2 (en) * | 2020-03-23 | 2023-06-13 | Sumitomo Chemical Company, Limited | Resist composition and method for producing resist pattern |
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JP4243029B2 (en) * | 2001-02-05 | 2009-03-25 | 富士フイルム株式会社 | Positive chemically amplified resist composition |
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-
2003
- 2003-02-10 JP JP2003032339A patent/JP4222850B2/en not_active Expired - Lifetime
-
2004
- 2004-02-05 CN CNB2004800039082A patent/CN100568098C/en not_active Expired - Lifetime
- 2004-02-05 US US10/544,902 patent/US20070160927A1/en not_active Abandoned
- 2004-02-05 WO PCT/JP2004/001203 patent/WO2004070473A1/en active Application Filing
- 2004-02-05 KR KR1020057014754A patent/KR20050109483A/en not_active Application Discontinuation
- 2004-02-05 DE DE112004000257.5T patent/DE112004000257B4/en not_active Expired - Lifetime
- 2004-02-10 TW TW093102993A patent/TWI340294B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2004070473A1 (en) | 2004-08-19 |
DE112004000257T5 (en) | 2006-02-23 |
JP2004264352A (en) | 2004-09-24 |
CN1748181A (en) | 2006-03-15 |
US20070160927A1 (en) | 2007-07-12 |
KR20050109483A (en) | 2005-11-21 |
TW200422777A (en) | 2004-11-01 |
JP4222850B2 (en) | 2009-02-12 |
CN100568098C (en) | 2009-12-09 |
DE112004000257B4 (en) | 2022-08-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |