TWI340294B - Radiation sensitive resin composition, manufacturing method thereof and fabricating method of semiconductor device using the same - Google Patents

Radiation sensitive resin composition, manufacturing method thereof and fabricating method of semiconductor device using the same

Info

Publication number
TWI340294B
TWI340294B TW093102993A TW93102993A TWI340294B TW I340294 B TWI340294 B TW I340294B TW 093102993 A TW093102993 A TW 093102993A TW 93102993 A TW93102993 A TW 93102993A TW I340294 B TWI340294 B TW I340294B
Authority
TW
Taiwan
Prior art keywords
manufacturing
semiconductor device
resin composition
same
sensitive resin
Prior art date
Application number
TW093102993A
Other languages
Chinese (zh)
Other versions
TW200422777A (en
Inventor
Kenichi Murakami
Suguru Sassa
Katsuhiro Yoshikawa
Masato Nishikawa
Ken Kimura
Yoshiaki Kinoshita
Original Assignee
Az Electronic Materials Japan
Spansion Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Japan, Spansion Llc filed Critical Az Electronic Materials Japan
Publication of TW200422777A publication Critical patent/TW200422777A/en
Application granted granted Critical
Publication of TWI340294B publication Critical patent/TWI340294B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
    • C08L101/02Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
TW093102993A 2003-02-10 2004-02-10 Radiation sensitive resin composition, manufacturing method thereof and fabricating method of semiconductor device using the same TWI340294B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003032339A JP4222850B2 (en) 2003-02-10 2003-02-10 Radiation-sensitive resin composition, method for producing the same, and method for producing a semiconductor device using the same

Publications (2)

Publication Number Publication Date
TW200422777A TW200422777A (en) 2004-11-01
TWI340294B true TWI340294B (en) 2011-04-11

Family

ID=32844335

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093102993A TWI340294B (en) 2003-02-10 2004-02-10 Radiation sensitive resin composition, manufacturing method thereof and fabricating method of semiconductor device using the same

Country Status (7)

Country Link
US (1) US20070160927A1 (en)
JP (1) JP4222850B2 (en)
KR (1) KR20050109483A (en)
CN (1) CN100568098C (en)
DE (1) DE112004000257B4 (en)
TW (1) TWI340294B (en)
WO (1) WO2004070473A1 (en)

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Also Published As

Publication number Publication date
WO2004070473A1 (en) 2004-08-19
DE112004000257T5 (en) 2006-02-23
JP2004264352A (en) 2004-09-24
CN1748181A (en) 2006-03-15
US20070160927A1 (en) 2007-07-12
KR20050109483A (en) 2005-11-21
TW200422777A (en) 2004-11-01
JP4222850B2 (en) 2009-02-12
CN100568098C (en) 2009-12-09
DE112004000257B4 (en) 2022-08-11

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