TWI339841B - Nand flash memory device and method of improving characteristic of a cell in the same - Google Patents
Nand flash memory device and method of improving characteristic of a cell in the sameInfo
- Publication number
- TWI339841B TWI339841B TW096115719A TW96115719A TWI339841B TW I339841 B TWI339841 B TW I339841B TW 096115719 A TW096115719 A TW 096115719A TW 96115719 A TW96115719 A TW 96115719A TW I339841 B TWI339841 B TW I339841B
- Authority
- TW
- Taiwan
- Prior art keywords
- cell
- memory device
- flash memory
- same
- nand flash
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070007051A KR100816162B1 (ko) | 2007-01-23 | 2007-01-23 | 낸드 플래시 메모리 장치 및 셀 특성 개선 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200832422A TW200832422A (en) | 2008-08-01 |
TWI339841B true TWI339841B (en) | 2011-04-01 |
Family
ID=39411485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096115719A TWI339841B (en) | 2007-01-23 | 2007-05-03 | Nand flash memory device and method of improving characteristic of a cell in the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US7477550B2 (zh) |
JP (1) | JP5158755B2 (zh) |
KR (1) | KR100816162B1 (zh) |
CN (1) | CN101231886B (zh) |
DE (1) | DE102007021613A1 (zh) |
TW (1) | TWI339841B (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITRM20060074A1 (it) * | 2006-02-15 | 2007-08-16 | Micron Technology Inc | Circuito per dati a latch singolo in un dispositivo di memoria volatile e delle a piu livelli |
US7548462B2 (en) * | 2007-06-29 | 2009-06-16 | Macronix International Co., Ltd. | Double programming methods of a multi-level-cell nonvolatile memory |
KR100923820B1 (ko) * | 2007-10-12 | 2009-10-27 | 주식회사 하이닉스반도체 | 페이지 버퍼, 이를 구비하는 메모리 소자 및 그 동작 방법 |
US7706190B2 (en) * | 2007-11-29 | 2010-04-27 | Hynix Semiconductor Inc. | Method of program-verifying a nonvolatile memory device using subdivided verifications with increasing verify voltages |
KR100967001B1 (ko) * | 2008-05-29 | 2010-06-30 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자의 프로그램 방법 |
JP2010165434A (ja) * | 2009-01-19 | 2010-07-29 | Nec Corp | 不揮発性半導体メモリ装置および不揮発性半導体メモリ装置のデータ記憶方法 |
US8386890B2 (en) * | 2009-09-11 | 2013-02-26 | Arm Limited | Error correction for multilevel flash memory |
KR20120043524A (ko) * | 2010-10-26 | 2012-05-04 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 동작 방법 |
KR101923157B1 (ko) | 2012-02-22 | 2018-11-28 | 삼성전자주식회사 | 메모리 시스템 및 그것의 프로그램 방법 |
JP2013218758A (ja) * | 2012-04-06 | 2013-10-24 | Genusion:Kk | 不揮発性半導体記憶装置 |
US8839073B2 (en) | 2012-05-04 | 2014-09-16 | Lsi Corporation | Zero-one balance management in a solid-state disk controller |
US20130343131A1 (en) * | 2012-06-26 | 2013-12-26 | Lsi Corporation | Fast tracking for flash channels |
US9239754B2 (en) | 2012-08-04 | 2016-01-19 | Seagate Technology Llc | Single read based soft-decision decoding of non-volatile memory |
US9189313B2 (en) | 2012-08-27 | 2015-11-17 | Kabushiki Kaisha Toshiba | Memory system having NAND-type flash memory and memory controller with shift read controller and threshold voltage comparison module |
US9627085B2 (en) * | 2012-11-29 | 2017-04-18 | Silicon Motion Inc. | Refresh method for flash memory and related memory controller thereof |
US9378830B2 (en) | 2013-07-16 | 2016-06-28 | Seagate Technology Llc | Partial reprogramming of solid-state non-volatile memory cells |
US9263136B1 (en) * | 2013-09-04 | 2016-02-16 | Western Digital Technologies, Inc. | Data retention flags in solid-state drives |
KR101601643B1 (ko) * | 2013-11-08 | 2016-03-09 | 주식회사 피델릭스 | 효율적으로 리프레쉬 동작을 수행하는 플래시 메모리 장치 |
KR102377453B1 (ko) * | 2015-11-05 | 2022-03-23 | 삼성전자주식회사 | 불 휘발성 메모리 장치 및 그것의 동작 방법 |
CN105719693B (zh) * | 2016-01-22 | 2019-09-17 | 清华大学 | Nand存储器的多比特编程方法及装置 |
CN107767831B (zh) * | 2017-11-06 | 2023-04-07 | 小春立体科技有限公司 | 硅基液晶像素电路及其显示装置 |
US11549713B2 (en) * | 2018-02-01 | 2023-01-10 | Ademco Inc. | Universal wireless HVAC controller with an internally stored infrared (IR) database |
JP6792667B2 (ja) * | 2019-05-13 | 2020-11-25 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
US10991433B2 (en) * | 2019-09-03 | 2021-04-27 | Silicon Storage Technology, Inc. | Method of improving read current stability in analog non-volatile memory by limiting time gap between erase and program |
KR20210069262A (ko) * | 2019-12-03 | 2021-06-11 | 에스케이하이닉스 주식회사 | 메모리 장치 및 그것의 동작 방법 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950000273B1 (ko) * | 1992-02-21 | 1995-01-12 | 삼성전자 주식회사 | 불휘발성 반도체 메모리장치 및 그 최적화 기입방법 |
JP3450456B2 (ja) * | 1994-08-31 | 2003-09-22 | 株式会社東芝 | 半導体記憶装置 |
JPH08297987A (ja) * | 1995-04-26 | 1996-11-12 | Toshiba Corp | 不揮発性半導体記憶装置 |
KR0145225B1 (ko) * | 1995-04-27 | 1998-08-17 | 김광호 | 블럭 단위로 스트레스 가능한 회로 |
JP3584607B2 (ja) * | 1996-05-10 | 2004-11-04 | ソニー株式会社 | 不揮発性記憶装置 |
JPH10255487A (ja) * | 1997-03-10 | 1998-09-25 | Fujitsu Ltd | 半導体メモリ装置 |
JPH11242893A (ja) * | 1997-12-26 | 1999-09-07 | Sony Corp | 不揮発性半導体記憶装置およびそのデータ書き込み方法 |
JP2000090677A (ja) * | 1998-09-09 | 2000-03-31 | Sony Corp | 不揮発性半導体記憶装置 |
KR100319559B1 (ko) * | 1999-11-01 | 2002-01-05 | 윤종용 | 문턱 전압 분포들 사이의 마진을 일정하게 유지할 수 있는멀티-스테이트 불휘발성 반도체 메모리 장치 |
KR100343285B1 (ko) * | 2000-02-11 | 2002-07-15 | 윤종용 | 프로그램 시간을 단축시킬 수 있는 플래시 메모리 장치의프로그램 방법 |
JP3942342B2 (ja) * | 2000-06-30 | 2007-07-11 | 富士通株式会社 | 多値データを記録する不揮発性メモリ |
JP2002230984A (ja) * | 2001-02-05 | 2002-08-16 | Fujitsu Ltd | 不揮発性半導体記憶装置 |
KR100454119B1 (ko) * | 2001-10-24 | 2004-10-26 | 삼성전자주식회사 | 캐쉬 기능을 갖는 불 휘발성 반도체 메모리 장치 및 그것의 프로그램, 읽기, 그리고 페이지 카피백 방법들 |
KR100437461B1 (ko) * | 2002-01-12 | 2004-06-23 | 삼성전자주식회사 | 낸드 플래시 메모리 장치 및 그것의 소거, 프로그램,그리고 카피백 프로그램 방법 |
ITRM20030599A1 (it) | 2003-12-23 | 2005-06-24 | Salice Arturo Spa | Cerniera con molla per mobile. |
KR100626371B1 (ko) * | 2004-03-30 | 2006-09-20 | 삼성전자주식회사 | 캐쉬 읽기 동작을 수행하는 비휘발성 메모리 장치, 그것을포함한 메모리 시스템, 그리고 캐쉬 읽기 방법 |
KR100635202B1 (ko) * | 2004-05-14 | 2006-10-16 | 에스티마이크로일렉트로닉스 엔.브이. | 듀얼 레지스터를 갖는 페이지 버퍼의 제어방법 및 그제어회로 |
KR100695477B1 (ko) * | 2004-07-01 | 2007-03-14 | (주) 만도맵앤소프트 | 실시간 교통 정보를 이용한 경로 제공 서비스 시스템 및그 방법 |
CN100527277C (zh) * | 2004-10-28 | 2009-08-12 | 三星电子株式会社 | 页面缓存器和包括页面缓存器的非易失性半导体存储器 |
KR100632637B1 (ko) * | 2004-11-11 | 2006-10-11 | 주식회사 하이닉스반도체 | 낸드 플래시 메모리 소자의 소거 검증방법 및 그 낸드플래시 메모리 소자 |
KR20060067380A (ko) * | 2004-12-15 | 2006-06-20 | 주식회사 팬택 | 위성용 안테나의 착탈을 감지 가능한 이동통신 단말기 및그 제어 방법 |
KR20060070734A (ko) * | 2004-12-21 | 2006-06-26 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치 및 그것의 프로그램 검증 방법 |
KR100669342B1 (ko) * | 2004-12-21 | 2007-01-16 | 삼성전자주식회사 | 낸드 플래시 메모리 장치의 프로그램 방법 |
KR20060073293A (ko) * | 2004-12-24 | 2006-06-28 | 주식회사 팬택 | 잠금 장치를 구비한 이동통신 단말기 |
KR100672149B1 (ko) * | 2005-02-17 | 2007-01-19 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치의 페이지 버퍼 동작 방법 |
KR100672122B1 (ko) * | 2005-03-10 | 2007-01-19 | 주식회사 하이닉스반도체 | 소비 전력이 감소된 플래시 메모리 장치의 페이지 버퍼 회로 |
KR100685532B1 (ko) * | 2005-03-15 | 2007-02-22 | 주식회사 하이닉스반도체 | 독출속도를 향상시키기 위한 버퍼 메모리를 갖는 불휘발성메모리 장치 |
KR100723772B1 (ko) * | 2005-03-28 | 2007-05-30 | 주식회사 하이닉스반도체 | 개선된 프로그램 동작 성능을 가지는 플래쉬 메모리 소자의페이지 버퍼 및 그것의 프로그램 동작 제어 방법 |
KR100680484B1 (ko) * | 2005-03-30 | 2007-02-08 | 주식회사 하이닉스반도체 | 개선된 독출 동작 기능을 가지는 플래시 메모리 장치의페이지 버퍼 회로 및 그 독출 동작 제어 방법 |
KR100600301B1 (ko) * | 2005-05-25 | 2006-07-13 | 주식회사 하이닉스반도체 | 면적이 감소된 페이지 버퍼 회로와, 이를 포함하는 플래시메모리 장치 및 그 프로그램 동작 방법 |
KR100706248B1 (ko) * | 2005-06-03 | 2007-04-11 | 삼성전자주식회사 | 소거 동작시 비트라인 전압을 방전하는 페이지 버퍼를구비한 낸드 플래시 메모리 장치 |
KR100624300B1 (ko) * | 2005-06-29 | 2006-09-19 | 주식회사 하이닉스반도체 | 프로그램 시간을 감소시키는 플래시 메모리 장치의프로그램 동작 제어 방법 |
KR100642892B1 (ko) * | 2005-07-19 | 2006-11-03 | 주식회사 하이닉스반도체 | 면적이 감소된 페이지 버퍼 회로와 그 독출 및 프로그램동작 방법 |
-
2007
- 2007-01-23 KR KR1020070007051A patent/KR100816162B1/ko not_active IP Right Cessation
- 2007-05-03 TW TW096115719A patent/TWI339841B/zh not_active IP Right Cessation
- 2007-05-09 DE DE102007021613A patent/DE102007021613A1/de not_active Withdrawn
- 2007-05-19 US US11/751,014 patent/US7477550B2/en not_active Expired - Fee Related
- 2007-05-30 JP JP2007142780A patent/JP5158755B2/ja not_active Expired - Fee Related
- 2007-07-02 CN CN2007101232468A patent/CN101231886B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7477550B2 (en) | 2009-01-13 |
CN101231886A (zh) | 2008-07-30 |
JP2008181628A (ja) | 2008-08-07 |
JP5158755B2 (ja) | 2013-03-06 |
TW200832422A (en) | 2008-08-01 |
KR100816162B1 (ko) | 2008-03-21 |
CN101231886B (zh) | 2011-06-22 |
US20080175063A1 (en) | 2008-07-24 |
DE102007021613A1 (de) | 2008-07-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI339841B (en) | Nand flash memory device and method of improving characteristic of a cell in the same | |
EP2201573A4 (en) | DETECTION OF MEMORY CELLS IN A NAND FLASH | |
TWI346955B (en) | Non-volatile memory device and method of programming a multi level cell in the same | |
EP2232501A4 (en) | FLASH MEMORY ARRANGEMENT AND FLASH MEMORY PROGRAMMING METHOD WITH DECAYING THE WEAKNESS | |
EP2467854B8 (en) | Selective memory cell program and erase | |
TWI368316B (en) | Multi-trapping layer flash memory cell | |
TWI367487B (en) | Flash memory programming and verification method with reduced leakage current | |
EP2219221A4 (en) | NON-VOLATILE MEMORY ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF | |
GB2432444B (en) | Flash memory device and word line enable method thereof | |
TWI368313B (en) | Resistive memory cell fabrication methods and devices | |
TWI371759B (en) | Flash memory device and method of operating the same | |
IL210397A0 (en) | Methods and apparatus for read-side intercell interference mitigation in flash memories | |
TWI369760B (en) | Non-volatile semiconductor memory device and method of making the same | |
TWI366893B (en) | Non-volatile memory device and method for manufacturing the same | |
EP2245661A4 (en) | MULTIPLE MEMORY CELLS AND METHOD | |
EP2345071A4 (en) | GRAPHIC MEMORY CELL AND MANUFACTURING METHOD THEREFOR | |
TWI367547B (en) | Integrated circuit having a memory cell array and method of forming an integrated circuit | |
EP2181478A4 (en) | ELECTROCHEMICAL DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
EP2172969A4 (en) | STORAGE ELEMENT AND MEMORY | |
EP2220653A4 (en) | HIERARCHIC COMMON SOURCE LINE STRUCTURE IN A NAND FLASH MEMORY | |
EP2184796A4 (en) | ELECTRIC POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
EP2187315A4 (en) | METHOD FOR ACCESSING DATA IN FLASH MEMORY AND DATA ACCESS CONTROLLER | |
EP2131439A4 (en) | LEAD ACCUMULATOR ELEMENT AND LEAD ACCUMULATOR | |
EP2240935A4 (en) | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR APPLYING VOLTAGE TO A MEMORY CELL | |
EP2024840A4 (en) | METHOD AND ARRANGEMENT FOR PROCESSING TRANSACTIONS IN A FLASH MEMORY DEVICE |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |