TWI337102B - Method for the removal of airborne molecular contaminants using oxygen and/or water gas mixtures - Google Patents
Method for the removal of airborne molecular contaminants using oxygen and/or water gas mixtures Download PDFInfo
- Publication number
- TWI337102B TWI337102B TW093115628A TW93115628A TWI337102B TW I337102 B TWI337102 B TW I337102B TW 093115628 A TW093115628 A TW 093115628A TW 93115628 A TW93115628 A TW 93115628A TW I337102 B TWI337102 B TW I337102B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- purge
- amc
- cleaning
- purge gas
- Prior art date
Links
- 239000007789 gas Substances 0.000 title claims description 221
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims description 98
- 239000001301 oxygen Substances 0.000 title claims description 98
- 229910052760 oxygen Inorganic materials 0.000 title claims description 98
- 238000000034 method Methods 0.000 title claims description 80
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims description 69
- 229910001868 water Inorganic materials 0.000 title claims description 68
- 239000000356 contaminant Substances 0.000 title claims description 59
- 239000000203 mixture Substances 0.000 title description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 147
- 238000010926 purge Methods 0.000 claims description 133
- 238000004140 cleaning Methods 0.000 claims description 111
- 229910052757 nitrogen Inorganic materials 0.000 claims description 76
- 239000011261 inert gas Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000003344 environmental pollutant Substances 0.000 claims description 12
- 231100000719 pollutant Toxicity 0.000 claims description 12
- 238000000746 purification Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 238000005406 washing Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000005096 rolling process Methods 0.000 claims description 5
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- 238000010586 diagram Methods 0.000 description 18
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- 230000003749 cleanliness Effects 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
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- XJKSTNDFUHDPQJ-UHFFFAOYSA-N 1,4-diphenylbenzene Chemical compound C1=CC=CC=C1C1=CC=C(C=2C=CC=CC=2)C=C1 XJKSTNDFUHDPQJ-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
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- 238000005202 decontamination Methods 0.000 description 2
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- 238000002156 mixing Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
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- 239000008096 xylene Substances 0.000 description 2
- 150000003738 xylenes Chemical class 0.000 description 2
- OIAQMFOKAXHPNH-UHFFFAOYSA-N 1,2-diphenylbenzene Chemical compound C1=CC=CC=C1C1=CC=CC=C1C1=CC=CC=C1 OIAQMFOKAXHPNH-UHFFFAOYSA-N 0.000 description 1
- DAABQHUHLBYNDQ-UHFFFAOYSA-N 1,2-xylene;1,4-xylene Chemical group CC1=CC=C(C)C=C1.CC1=CC=CC=C1C DAABQHUHLBYNDQ-UHFFFAOYSA-N 0.000 description 1
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical compound C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
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- 241001674044 Blattodea Species 0.000 description 1
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- 241000238366 Cephalopoda Species 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101100285000 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) his-3 gene Proteins 0.000 description 1
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- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229940110728 nitrogen / oxygen Drugs 0.000 description 1
- 229940038032 nitrogen 20 % Drugs 0.000 description 1
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
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- FTIMWVSQXCWTAW-UHFFFAOYSA-N ruthenium Chemical compound [Ru].[Ru] FTIMWVSQXCWTAW-UHFFFAOYSA-N 0.000 description 1
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- 229910021642 ultra pure water Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/72—Organic compounds not provided for in groups B01D53/48 - B01D53/70, e.g. hydrocarbons
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Analytical Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Health & Medical Sciences (AREA)
- Biomedical Technology (AREA)
- Environmental & Geological Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Sampling And Sample Adjustment (AREA)
- Separation Of Gases By Adsorption (AREA)
- Gas Separation By Absorption (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US47514503P | 2003-06-02 | 2003-06-02 | |
| US10/683,904 US6913654B2 (en) | 2003-06-02 | 2003-10-10 | Method for the removal of airborne molecular contaminants using water gas mixtures |
| US10/683,903 US7189291B2 (en) | 2003-06-02 | 2003-10-10 | Method for the removal of airborne molecular contaminants using oxygen gas mixtures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200512048A TW200512048A (en) | 2005-04-01 |
| TWI337102B true TWI337102B (en) | 2011-02-11 |
Family
ID=36947568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093115628A TWI337102B (en) | 2003-06-02 | 2004-06-01 | Method for the removal of airborne molecular contaminants using oxygen and/or water gas mixtures |
Country Status (6)
| Country | Link |
|---|---|
| US (5) | US7189291B2 (enExample) |
| EP (1) | EP1629528A1 (enExample) |
| JP (1) | JP4729483B2 (enExample) |
| KR (1) | KR20060017623A (enExample) |
| CN (2) | CN100533676C (enExample) |
| TW (1) | TWI337102B (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050229947A1 (en) * | 2002-06-14 | 2005-10-20 | Mykrolis Corporation | Methods of inserting or removing a species from a substrate |
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2003
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- 2003-10-10 US US10/683,904 patent/US6913654B2/en not_active Expired - Fee Related
-
2004
- 2004-06-01 EP EP04753969A patent/EP1629528A1/en not_active Ceased
- 2004-06-01 CN CNB200480021874XA patent/CN100533676C/zh not_active Expired - Fee Related
- 2004-06-01 US US10/523,371 patent/US8075704B2/en not_active Expired - Fee Related
- 2004-06-01 TW TW093115628A patent/TWI337102B/zh not_active IP Right Cessation
- 2004-06-01 JP JP2006515059A patent/JP4729483B2/ja not_active Expired - Fee Related
- 2004-06-01 CN CNA2009101269211A patent/CN101599432A/zh active Pending
- 2004-06-01 KR KR1020057023004A patent/KR20060017623A/ko not_active Abandoned
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2005
- 2005-04-25 US US11/113,726 patent/US7377982B2/en not_active Expired - Fee Related
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2007
- 2007-02-13 US US11/706,044 patent/US20070137676A1/en not_active Abandoned
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| EP1629528A1 (en) | 2006-03-01 |
| US7377982B2 (en) | 2008-05-27 |
| US6913654B2 (en) | 2005-07-05 |
| JP2006526901A (ja) | 2006-11-24 |
| KR20060017623A (ko) | 2006-02-24 |
| US20060118138A1 (en) | 2006-06-08 |
| US20050205114A1 (en) | 2005-09-22 |
| CN100533676C (zh) | 2009-08-26 |
| TW200512048A (en) | 2005-04-01 |
| US20040237777A1 (en) | 2004-12-02 |
| US8075704B2 (en) | 2011-12-13 |
| US7189291B2 (en) | 2007-03-13 |
| CN101599432A (zh) | 2009-12-09 |
| CN1830071A (zh) | 2006-09-06 |
| JP4729483B2 (ja) | 2011-07-20 |
| US20070137676A1 (en) | 2007-06-21 |
| US20040238013A1 (en) | 2004-12-02 |
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