TWI301328B - Semiconductor and manufacturing method of the same - Google Patents

Semiconductor and manufacturing method of the same Download PDF

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Publication number
TWI301328B
TWI301328B TW095104528A TW95104528A TWI301328B TW I301328 B TWI301328 B TW I301328B TW 095104528 A TW095104528 A TW 095104528A TW 95104528 A TW95104528 A TW 95104528A TW I301328 B TWI301328 B TW I301328B
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Taiwan
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region
substrate
layer
insulating film
semiconductor
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TW095104528A
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English (en)
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TW200638544A (en
Inventor
Hiroyasu Ishida
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Sanyo Electric Co
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Publication of TW200638544A publication Critical patent/TW200638544A/zh
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Publication of TWI301328B publication Critical patent/TWI301328B/zh

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Description

-1301328 九·、發明說明： 【發明所屬之技術領域】 本發明係有關半導體裝置及其製造方法，尤指有效防 止A1(鋁）滑動之半導體裝置及其製造方法。 【先前技術】 弟8圖表示g知的半導體晶片的周邊區域附近的剖視 圖。於半導體晶片80之元件區域71，譬如設置溝渠結構 之M0SFET的晶格（ce⑴73。亦即，於n+型的石夕半導體基 參板51之上積層n—型之屋晶層52而形絲極區域化半土導 .體，録面設置通道層54,並設置溝渠58。於溝渠⑽内 隔著閘極絕緣膜61設置閘極電極63，且於溝渠58間之基 板表面配置源極區域65、本體（b〇dy)區域64。 土 於元件區域71表面設置源極電極67，且延伸於周邊 區域72。於連接於閘極電極63之多晶石夕63p 極電 路=此外於周邊區域72之最外周，為防止反轉而設置 質辟區域7〇，且使遮蔽金屬(Shieldl«a⑽ 人/、接觸（警如麥考專利文獻！）。 [專利文獻1]曰本特開2005 —1 〇1334號公報 【發明内容】 (發明所欲解決之課題） 如第8圖所示，於元件區域71外周之、 配置層間絕緣膜66與閘極絕緣膜61之一立周邊區域72， 形成護環53及高濃度雜質區域7 :部分，以及甩以 所融合之絕緣膜62。絕緣膜62係氧切為遮罩的絕緣膜 317848 5 1301328 接著，覆蓋絕緣膜62及高濃度雜質區域7〇上，設置 遮蔽金屬69與閘極電路68等之金屬層6〇。金屬層⑽係 與源極電極6 7同為A1電路層。 半導體晶片80的整面係以表面保護膜（passivati〇n 膜）74覆蓋。並且半導體晶片8〇係固著於導線架的晶島 (and)(未圖不）之上’與晶島一體由構成封裝（以以邱e) 之樹脂層75予以遮蓋。亦即如圖所示，於M電路層6〇 上配置表面保護膜74及樹脂層75。 由於半導體晶片80承受自樹脂層75之機械性應力， 產：A1滑動成為故障的原因之-。所謂A1滑動：係半導 片0自外承叉熱應力時，自樹脂層Μ透過 護膜^承受應力之A1電路層6Q滑動（sUde)之現象。 斤月來自外#之熱應力係有種種’譬如溫度循環試驗 =衝擊試驗等均為熱應力。尤其，如溫度循環試驗，自 ^重硬施加熱應力時，會於表面保護膜發生裂痕，如此 _ ^則有加速Α1滑動的發生之問題。 Α1 α動係以遮蔽金屬69與閘極電路上等的半導妒 ^片80之周邊區域72為首，容易發生於配置有^電路層且 、 置尤其遮蔽金屬69 ’係配置於相對其寬度段差較 Π亦即’於圖中遮蔽金屬69所覆蓋之段差s係為-地’ I义平坦且摩擦小也是成為無法抑制A1滑動之原因。 :::遮蔽金屬69’設置有閑極電路⑽、源極電極 +卢入》二、為電路層60 ’故會發生A1滑動。因此，遮 敝主翁如乐8圖之箭頭所示滑動時，與鄰接設置之閑極 317848 6 •1301328 電路68接觸，而引起閘極一 閘極電路68與源極電極67 情況。 汲極間洩漏（leak)。並且亦有 接觸，引起閘極〜源極間洩漏之 册此外，機械性應力大時，M滑動會對表面保 帶來應力，亦有發生裂痕之π + 4 ^ 74 ^ f , 衣痕知:入％，會使A1電路層 ，生斷線之不良狀況。又亦有發生介由水或雜質之電路 戌漏的不良狀況之情況，而有可靠性上之問題。、 b1 丨（解決課題之手段） 本發明係為了解決上述問題而研創者，第為 導體基板上之元件區域及設置於前述元件區域外 :::域之半導體裝置’其係藉由具備如下構成來解 :者’包含··設置於前述周邊區域之前述基板表面之 艇；設置於前述絕_之皿规凹部；設置於前述絕緣膜 士之盒屬層；設置於前述金』層上之保護膜；以及設置於 别述保護膜上之樹脂層。 、 雕第2,係藉由具備如下構成來解決者，包含··於半導 體基板上具有元件區域及前述元件區域外狀周邊區域之 +導體晶片m前述周邊區域之前述基板表面之絕緣 版，設置於前述絕緣膜之凹部；設置於前述絕緣膜上之金 屬層’復盖則述半導體晶片表面之保護膜；具有固著前述 :導體f片之背面的晶島之導線架(lead frame);以及以 體覆盍珂述晶島及前述半導體晶片之樹脂層。 第3，係藉由具備如下步驟來解決者，包含：於半導 317848 7 1301328 體·基板上形成元件區域與周邊區域 周邊區域之前诚美妬矣品AA ’於攻置於前述 飞之别述基板表面的絕緣膜形成 ，前述絕緣膜及前述凹部的金屬層之步驟=二成 層上形成保護膜之步驟；以 :^屬 之步驟。 保邊胺上形成樹脂層 (發明之效果） 依據本發明之構造，於A1電路層 複數個凹部，而加大由方的、、，巴緣勝设置 re、Θ由 由奴差引起之摩擦。藉此，即可抑細 ^ 顧試驗等之熱應力所產生之Α1滑動的發生。 此外日係可與凡件區域之形成接觸孔㈣ 成。亦即僅變更遮罩即可實施，故可提供防 驟 =罩片數的增多，並抑制滑動之半導體裝置= 【實施方式】 ^本發明之實施形態，以於元件區域形成心道型之 >溝¥構造的M〇SFET之情況作為例子，詳細加以說明。 第1圖係表示本發明之半導體裝置的構造之俯視圖。 外在此省略表面的源極電極。如第1圖所示，於半 導體晶片100之元件區域2卜配置複數個M0SFET的晶格 2J :源極電極係與元件區域幻上之各晶格27的心 連接而設置。閘極電路18係與閘極電極連接，並延伸 儿一件區域21外側之周邊區域22，而連接於閘極 + 極 18ρ 。 ι 亚且，於半導體晶片1〇〇之最外周，設置通稱孔環 317848 8 1301328 (annular)之高濃度雜質區域（在此未圖示），以防止基板表 面之雜質的反轉。孔環係與覆蓋其表面之遮蔽金屬^接 觸。 第2圖係弟1圖之a-a線剖視圖。 如圖所示’半導體基板，係於n+型的石夕半導體基板！ 之上，積層η-型之磊晶層2,而形成汲極區域1)者。通道 層4係於汲極區域D之表面，選擇性地植入ρ型的删等之 擴散區域。 溝渠8係貫穿通道層4到達汲極區域D。—般而言， 於半導體基板表面，圖案化成格子狀或條紋狀準^係 於内壁設置閘極氧化膜U。閑極氧化膜u的膜厚係按昭 驅動電壓而為數百A。於溝渠8埋設多晶石夕。於多晶石夕'、、，、 為謀求低電阻化導入n型雜質，而成為閉極電極Η。曰閉極 電極13係藉由拉出到基板上之吝曰 層18接觸。 板上之夕曰曰石夕咖’而與閉極電路 ，源極區域15,係設置於與溝渠8鄰接之通道層 區域者’而與覆蓋^件區域21之源極電極Η 接觸。此外，於鄰接之源極區域15 f曰1的通道層4表面，設 置P+型雜質區域之本體區域14，而使基板之電位安定。又 源極電極17係A1電路層’而藉由層間絕緣膜16間之 接觸孔CH’與源極區域15及本體區域14接觸。、 半導體晶片100係由元件區域21與周邊區域22所構 成κ牛區域21係配置M〇SFET晶格27之區域，周邊區域 係圍繞-件區域21之外側而到達半導體晶片端部之區 317848 9 1301328 域，。於周邊區域22 環3、n+型雜質區域之;二表2〇面’設置P+型亀 部，緩和通道層4周緣』環3係位於通道層4端 而抑制電場集中。此外孔；：層(㈣以⑽)的曲率 面之雜質的反轉。 心係如雨文所述，防止基板表 於護環3之上方，酡罢4 U的多曰石…夕 彳出兀件區域21之閘極電極 路以接;：1 晶:夕1㈣ μ接觸接觸再者’孔购與設置於其上方之遮蔽金屬 源極電極；[7、間極雷 ^ 金屬層10所構成。全屬；1(1且姊远敝孟屬19係由相同的 〃層10具體上係A1電路層。此外省 =Γ。屬層係亦可於A1電路層之下層配置阻障金屬層 周邊絕緣㈣’在此係配置於周邊區域22之絕緣膜 的，稱^即’於周邊區域22殘留之閑極氧化膜u、層 >間絕緣膜16之—部分。此外係為殘㈣周邊區域22之成 運層」°隻=3、及孔環20等雜質擴散之遮罩的絕緣 胲在本貝細形悲中，周邊絕緣膜i 2，係硼磷矽玻璃BpsG (Bo⑽ Phosphorus Silicate Glass)膜，熱氧化膜等之氧 化膜。 於遮蔽金屬19下方之周邊絕緣膜12設置凹部23。凹 部23係於遮蔽金屬19下方設置複數個，至少1個係完全 去除周邊絕緣膜12而成為接觸孔CH。在圖中，於遮蔽金 屬19下方設置2個凹部23,共同成為孔環2()與遮蔽金屬 317848 10 1301328 ，❿之接觸孔CH。但是，至少只要！個凹部 則其他的:部23亦可於其底部殘留著周邊絕、孔 柳’於閘極電路18下方之周邊絕 置凹部23。在此凹部23係也設置複數個，至=2，也§又 全去除周邊絕緣膜12，而成為接觸孔ch /個係几 電路18下方設置2個凹部23，共/ ’於間極 閘極電路18之接觸孔CH。 〜、夕晶石夕13p與 於A1電路層上，譬如設置 • 24之氮化膜。表面保護臈 面:顿(保護層膜) 路層10之外，覆蓋半導體晶片整面。 f塾之A1电 並且，於表面保護膜24上設置塑模樹 樹脂層25,將於後述，以 輕柯月曰層25。塑模 架，而構成封裝。 #“ +導體晶片⑽與導線 溫度循環試驗算，# 裝置時，半導體晶 。之熱應力施加於半導體 模樹脂声25的Π 、表面保護膜24、構成封農之塑 •力。於^ Z 係各自不同，故於各層間發生岸 ^方、低^呆存時1應 作用，Ai電路層1()會朝 “應力對晶片產生 塑模樹脂層25的膨脹應力對、產Y °於向溫保存時， 會朝著晶^部_。 生作m電路層10 ^ ^ ^ ^ ®11 ^ 24 1 塑模樹腊層25之熱應力時、^ ’電s路層10承受來自 則於自熱應力解放㈣π 、表面保相24若無異常， 欠的日寸間點恢復到原來的狀態（彈性變 317848 11 1301328 形）’而觀祭不到A1滑動現象。 但疋，如μ度循環試驗，自外部重複施加熱庫力 熱膨脹係數的不同，若在表面保護膜出現裂痕，縣 恢復到原來的狀態（塑性變形）。其結果產生 現，象 因此，本實施形能，伤认*、替 月動見象 H係於+導體晶片100之周邊區诚 22，積層周邊絕緣膜12、A1電 ^ ° 塑模樹脂層25時，於周邊絕緣膜θ 、面保礎膜24、 门故、、、G緣胰12設置凹部23者。 凹部23、係於遮蔽金屬19下方譬如設置2個。如此— 咮，增加段差S之數目，而可使以電路層 =之摩擦加大(參考箭頭)。亦即，即使因 二: 應力而使塑模樹脂層25收縮時，亦可抑制M滑動的發生: 一在此，周邊絕緣膜12的厚度大約為12"。因 貫㈣態θ之凹部23的深度為U”，開口寬度譬如為4 ^真，凹部23係以藉由段差S而使A1電路層10盘 =緣膜12之摩擦加大為目的。亦即凹部23係不需要 周4賴12的下層露出之深度，開口幅度亦可適 禪0 成扩1個凹部23係全部去除周邊絕緣膜12，形 成遮敝金屬19與孔環2〇之接觸？丨、弋叫4 石夕13Ρ之接觸孔。之接觸孔、或間極電路U與多晶 再者，間極電路18的下方也相同地藉由設置凹部Μ， 而可抑制Α1滑動的發生，且可 極-源極咖。 了口避閉極-汲極㈣漏及間 第3圖係將半導體晶片1⑽安裝於封裝之圖例。第3 317848 12 1301328 圖（A)為側視圖，第3圖（B)為背面圖，第3圖（c)為第3 圖（B)之b-b線剖視圖。又，為了比較，第4圖係表示全塑 ' (、U11 m〇 1 d)型之女I例。第4圖（A)為側視圖，第4圖 (B)為背面圖，第4圖（c)為第4圖（幻之〇1線剖視圖。 、、如第3圖（A)所示，前述的半導體晶片1〇〇係於背面形 成，極電極26,譬如於導線架31的晶島32上藉由導電性 士著背j 34等固著女裝。半導體晶片⑽的表面係以表面保 膜24覆盍，自表面保護膜24的開口部露出之μ電路層 .黾木丈干上）1 〇與引線33以搭接線（bondi ng wi re) 35等連 接。塑模樹脂層25得、以一體覆蓋半導體晶片100與晶島 32而構成封裝，未固著半導體晶片100之晶島32的背面， 係自塑模樹脂層2 5露出（參考第3圖⑻）。封裝大小譬如 係 lOmmx 15_ 〇 士包力〆肖耗（P〇wer dissipation : PD)容許損失（對通電 ¥之發熱的容許值）高的半導體裝置，係必須改善散熱性。 丨匕並非王塑核型的安裝，而如第3圖（B)所示露出晶島 32之，或僅於螺釘等之固定部露出晶島而安裝。 北疋/弟3圖（C)所示，在這種類型之安裝中，晶島 32之背面露出，塑模樹脂層25係僅覆著於晶島32之周 圍亦即」如箭頭所示因來自外部的熱應力而在塑模樹脂 每25+收、、、倚蛉’塑模樹脂層25係幾乎不會受到晶島32造成 言=之制限。因此，收縮率也變大，A1滑動之發生率變 上w 封衣尺寸為大型（譬如〇〇mmx 15_))時，A1滑 動變為容易發生。 317848 13 1301328 ‘另-方面’第4圖係通稱全塑模型之安裝例。於全夠 模型之安裝中’塑模樹脂層25係包含背面一體覆蓋土 32與半導體晶片1〇〇。此種安裝時，即使因來自外^曰的^ 應力使塑模樹脂層25收縮，也比較少發生A"骨動。此： 由於配置於塑模樹脂層25内部之晶島32 : 層25之收縮（箭頭）受到制限之故。 土杈树月曰 在本實施形態中，尤其如第3圖夕 時，對A1滑動的抑制是有效的。。 $ 土杈型的女裝 前述之半導體裝置的製造方法，參考第 弟7圖及弟2圖加以說明。 第1步驟(第5圖及第⑻：於以型矽半導體基板！ 貝曰η型的蟲晶層2而形成汲極區域^於成為通道層4 之區域的端部’以氧化膜（未圖示）作為遮罩而植入 南濃度的硼，而形成護環3。再者，於周邊區域22之最： 周以乳化膜（未圖示）作為遮罩，將高濃度之η型雜質離子 •植入，而形成高濃度雜質區域（孔環）2〇。 、 於表面形成熱氧化膜5s之後，再_預定的通道層4 之部分的氧化膜。於整面譬如以劑量1〇χ 1〇lw植入硼 之後’擴散而形成p型之通道層4。護環3係用以緩和於 通逞層4端部之電場集中者，若不影響特性則可不設置。 於正面藉由化學蒸氣沈積（Chemical Vapor Dep〇sli：lon ·· CVD)法產生非推雜式石夕玻璃（n⑽―如㈣ S!ncate Glass: NSG)之CVD氧化膜5。之後，將由抗蝕 膜構成之遮罩，除了元件區域21之溝渠開口部外予以蓋 317848 14 1301328 上eCVD氧化膜5係亦覆蓋基板周邊區域 上而設置，再與熱氧化膜53及成為護 之熱氧化膜5s 罩的氧化膜融合而成為周邊絕緣膜^ 2〇之遮 CVD氧化膜5乾餘刻予以除去一部分、11域21之 露出之溝渠開口部。 形成通道區域4 之後，以CVD氧化膜5作為遮軍 石夕丰霉辦糞4c; 4丨^ 丹知溝朱開口部之 夕丰¥脰基板利用CF系及胁系氣體進行乾 貫穿通道層4到達汲極區❹ +而形成 (, 心屏木 8(昂 5 圖（A))。 進仃虛挺（dU_y)氧化，於溝渠δ内壁盘 形成氧化膜(未圖示），去除乾钱刻時之钱刻損日表面 damage) ’之後，再藉由钱刻除去此氧化膜與cvdV^= 亚且，氧化整面，且於溝渠δ内壁，將間極氧二 的表面’再與周邊絕緣膜12融合（第5圖⑻）。 =整㈣積多晶石夕層，僅護環3之上方設置遮罩進行 亡、”晶矽層係亦可以沉積包含雜質的多晶矽之層， ::積非摻雜的多晶矽後’亦可為導入雜質之層。由此， >成埋設於溝渠8之閘極電極13。在周邊區域22，將拉 出閘極電極13 $炙曰坊！ q ^、 之夕日日矽13P作成圖案（第5圖（C))。 之後為了使基板的電位安定，設置依據露出本體區 :之形成區域的抗蝕膜(未圖示)之遮罩，再選擇性地將硼 言如以劑量2·0χ 10i5cm_2離子植入。 、^，的抗钱膜（未圖示）於預定的源極區域15,將砷譬 、片j里5· Οχ 1〇 em程度離子植入。去除抗蝕膜之後， 317848 15 1301328 .理擴散雜質’而形成Ω +型的源極區域15與本體 27，=來，以溝渠8圍繞之區域則成為M_◊晶格 27且形成配置複數個晶格27 戏21之外侧到達半導 卞匕 圖）。 w而―之周邊區域22(第6 弟2步驟（弟7圖），於整面 ^
(未圖示）及依垆Rpqr恳 曰 〆〉儿積NSG或PSG ;及依據BPSG層之絕緣膜16，。絕緩贈1β，〆 •成於周邊區域22上，％ t 、、e、、彖艇1δ係亦形 膜，以使元:4 ΓΓ緣膜12融合。藉由抗敍 1更几件£域21之閘極電極13上 周邊區域22之所期望圖案之周邊絕緣膜12^6，及 而設置遮罩（第7圖（Α))。 、欠召的方式， 於元件區域21蝕刻絕緣膜〗6,， 13上之層間絕緣膜16。 、 >成覆蓋閘極電極 此時，同時於周邊絕緣膜12形成 ，位於遮蔽金屬之形成區域下方之周邊 亦即，於 2個凹部23。凹部23係至少將、、、、旲2,譬如形成 層的遮蔽金屬接觸之接觸孔，而’、、、用Μ與形成於其上 行餘刻。在此，為了以—次的ς =面露出之方式進 末進仃，於遮蔽金屬形成區域中，篇叙/ 6之蝕刻 王部露出基板表面（孔環2〇)。去，<、固凹部23係 時，以配合最厚的膜厚之 ：為接觸孔之情況 亚且，於閘極電路之形成 虫旬。 譬如亦形成2個凹部23。這此 〇周邊絕緣膜12， k二係亦為了與絕 、巴、、彖馭16,的蝕 317848 16 1301328 -刻以同一步驟形成，而同樣地成為與多晶石夕13p接觸之接 觸孔（第7圖（B))。 第3步驟（第2圖）：之後將鋁等以濺鍍裝置附著於整 面，而形成A1電路層1 〇。在元件區域21，將與源極區域 15及本體區域14接觸之源極電極17作成圖案。再者，同 日守形成閘極電路18及遮蔽金屬1 9。此外凹部2 3係藉由A1 電路層10而覆蓋。 • · 亚且，於背面形成汲極電極（未圖示），且於基板表面 ，•形成表面保護膜。之後利用切割分割為各個半導體晶片， 再於導線架之晶島上固著半導體晶片背面（汲極電極）。藉 由格接線等，進行所期望的配線之後，再將半導體晶片及 導線架，藉由塑模樹脂層，一併覆蓋。在本實施形態中， 设為未固著半導體晶片之晶島的背面係自塑模樹脂層露出 之類型的安裝。由此，得到於第2圖及第3圖（人）所示之最 後結構。
φ 再者，於本發明之實施形態中，以N通道型M0SFET 為例子作了說明，於導電型為相反之p通道型MqSfEt亦同 樣可實施。 此外，作為A1電路層以M〇SFET之遮蔽金屬19及間極 電路18為例子作了說明，但不限於此。譬如元件 可為絕緣間雙載子電晶體（InsulatedGateBipGiar 4
Transistor: IGBT)#之絕緣閘極型半導體元件，或蕭特美 =極體（schcmky Barrier Dl〇de)等。亦即，只要為於^ 故區域隔著絕緣肢置A1電路層之半導體裝置，則藉由於 317848 ]7 '1301328 • f絕緣膜設置凹部，的發生。 【圖式簡單說明】 第1圖係本發明之半導體裝置的俯視圖。 f2圖係說明本發明之半導體裝置之剖視圖。 北第3圖係說明本發明之半導體裝置的⑴側視圖、⑻ 月面圖、（C)剖視圖。 弟4圖係用以說明本發明之半導體裝置的⑴側視 、圖、（B)背面圖、（〇剖視圖。 鲁第5圖（A)至⑹係說明本發明之半導體裝置的製造方 法之剖視圖。 第6圖係說明本發明之半導體裝置的製造方法之剖視 、第7圖（A)及（B)係說明本發明之半導體裝置的製造方 法之剖視圖。 第8圖係說明習知的半導體裝置之剖視圖 【主要元件符號說明】 2 汲極區域 4 通道層 8 溝渠 11 閘極氧化膜 13 閘極電極 14 本體區域 16 層間絕緣膜 18 閘極電路 n+型矽半導體基板 1 護環 5 CVD氧化膜 10 A1電路層 12 周邊絕緣膜 13P 多晶碎 15 源極區域 17 源極電極 317848 18 1301328 19, 遮蔽金屬 20 高濃度雜質區域 21 元件區域 22 周邊區域 23 凹部 24 表面保護膜 25 塑模樹脂層 26 没極電極 27 晶格 31 導線架 32 晶島 33 引線 34 導電性接著劑 35 才合接線 51 n+型矽半導體基板 52 >及極區域 53 護環 54 通道層 58 溝渠 60 A1電路層 61 閘極氧化膜 62 絕緣膜 63 閘極電極 64 本體區域 65 源極區域 66 層間絕緣膜 67 源極電極 68 閘極電路 69 遮蔽金屬 70 南濃度雜質區域 71 元件區域 72 周邊區域 73 晶格 74 表面保護膜 75 樹脂層 80 ^ 100半導體晶片 19 317848

Claims (1)

1301328 十、申請專利範圍： 1. -種半導體裝置’係具有設置於半導體基板上之元件區 域及設置於前述元件區域外周之周邊區域，其特徵在具 備： 設置於f述周邊區域之前述基板表面之絕緣膜； 設置於前述絕緣膜之複數個凹部； 設置於前述絕緣膜上之金屬層； 設置於前述金屬層上之保護膜；以及 設置於前述保護膜上之樹脂層。 2. —種半導體裝置，其特徵在具備： 岡St導脰基板上具有元件區域與前述元件區域外 周之肩邊區域之半導體晶片· 机署二二述周邊區域之前述基板表面之絕緣膜； 5又置於則述絕緣膜之凹部； 設置^前述絕緣膜上之金屬層； • €蓋前述半導體晶片表面之保護膜； 具有固著前述半導 架；以及 午¥肢日日片之背面的晶島之導線 I一體覆蓋前述晶島及前述半導體曰片之… 3. 如申請專利範圍第2項之半導體吃置，：片之層： 半導體晶片之前述 ：，固者別述 4. 如申請專利範固第面係自料樹脂層露出。 前述金屬層係經由“ ^ 2項之半導體裝置，其中， ^ 則述凹部而與前述周i蠢F ϋ夕今、十、 基板表面或前述元件區域電性連接。4域之刖述 317848 20 1301328 5 ··如申請專利範圍繁彳 μ 义、+、八严&圍弟1項或弟2項之半導體裝置，其中， 刚述金屬層係至少包含AU銘)電路層。 6·如申請專利範圍第4 、， 層係與設置於前制邊㈣金屬 域接觸。 °。或之所述基板表面之雜質區 7·如申請專利範圍第4項之半導體裳置，其中，前 層係經由導電層與前述元件區域連接。 王萄 & =請專利範圍第項之半導體裝置， 丽述絕緣膜係為氧化膜。 ，、中， 9· 利範圍第1項或第2項之半導體裝置，其中， 於刖述基板背面設置電極。 1〇.=料利範圍第！項或第2項之半導體裝置， 11 於料元件區域設置溝渠構造之絕緣閘極型元件 .種+導體裝置之製造方法，其特徵在具備： 於半導體基板上形成元件區域與周邊區域之 於設置於前述周邊區域之俞 ’、、聚， 形成凹部之步驟；成之^基板表面的絕緣膜 形f覆蓋前述絕緣膜及前述凹部之金屬層的步驟. 於則述金屬層上形成保護膜之步驟；以及 於丽述保護膜上形成樹脂層之步驟。 12.:申請严利範圍第11項之半導體裝置之製造方法，宜 I之=金屬層係具有形成與前述元件區域接觸的接觸 孔之步驟’且料凹部係與前述制 一步驟所形成。 办戚為猎由同 317848 21
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