JP5540911B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5540911B2 JP5540911B2 JP2010131964A JP2010131964A JP5540911B2 JP 5540911 B2 JP5540911 B2 JP 5540911B2 JP 2010131964 A JP2010131964 A JP 2010131964A JP 2010131964 A JP2010131964 A JP 2010131964A JP 5540911 B2 JP5540911 B2 JP 5540911B2
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 38
- 150000004767 nitrides Chemical class 0.000 claims description 38
- 239000011347 resin Substances 0.000 claims description 36
- 229920005989 resin Polymers 0.000 claims description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- 229920005591 polysilicon Polymers 0.000 claims description 26
- 238000007789 sealing Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 16
- 230000002265 prevention Effects 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 230000001133 acceleration Effects 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000010306 acid treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0051—Packages or encapsulation for reducing stress inside of the package structure between the package lid and the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/02—Housings
- G01P1/023—Housings for acceleration measuring devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0154—Moulding a cap over the MEMS device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Description
図1は本発明の実施の形態1に係る半導体装置の断面図である。半導体装置10は加速度センサで構成されている。半導体装置10はSi板12を備えている。Si板12上には絶縁膜14が形成されている。絶縁膜14上には配線層16が形成されている。絶縁膜14の表面と配線層16の表面は、段差なく接続されている。なお、Si板12、絶縁膜14及び配線層16はまとめて基板18と称することがある。
図12は本発明の実施の形態2に係る半導体装置の断面図である。半導体装置76については、本発明の実施の形態1に係る半導体装置10と類似点が多いため、半導体装置10との相違点のみ説明する。半導体装置76は、ポリシリコン78を備える。ポリシリコン78はセンサ部分と電極パッド32の間だけでなく、封止部28の直下にも形成されている。これにより封止部28と配線層16の間には、窒化膜20とポリシリコン78が形成されていることとなる。
Claims (2)
- 基板と、
前記基板上に形成された素子と、
前記基板上に形成された窒化膜と、
前記窒化膜上に直接接するように形成された剥離防止膜と、
前記剥離防止膜と前記素子を覆うように形成されたモールド樹脂と、
前記基板上に形成され、かつ前記モールド樹脂で覆われた複数の電極パッドと、を備え、
前記剥離防止膜は圧縮応力が残留した膜であって、前記窒化膜の引張応力を相殺して両者の応力が弱められ、
前記素子は、導体からなる可動部、導体からなる支持部、導体からなる封止部と、前記封止部上に固定されるガラスキャップを備える加速度センサのセンサ部であり、
前記基板内には配線層が形成され、
前記センサ部の前記支持部と前記複数の電極パッドは前記配線層によって電気的に接続され、
前記封止部と前記封止部の直下領域に形成される前記配線層との間には、前記窒化膜と前記剥離防止膜とが形成されたことを特徴とする半導体装置。 - 前記剥離防止膜はポリシリコン又はアモルファスシリコンで形成されたことを特徴とする請求項1に記載の半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010131964A JP5540911B2 (ja) | 2010-06-09 | 2010-06-09 | 半導体装置 |
TW100104251A TWI431731B (zh) | 2010-06-09 | 2011-02-09 | 半導體裝置及其製造方法 |
US13/025,633 US8390121B2 (en) | 2010-06-09 | 2011-02-11 | Semiconductor device and method of manufacture thereof |
DE102011075365.6A DE102011075365B4 (de) | 2010-06-09 | 2011-05-05 | Halbleitervorrichtung und Herstellungsverfahren hierfür |
KR1020110052558A KR20110134830A (ko) | 2010-06-09 | 2011-06-01 | 반도체장치와 그 제조방법 |
CN201110165501.1A CN102280416B (zh) | 2010-06-09 | 2011-06-08 | 半导体装置及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010131964A JP5540911B2 (ja) | 2010-06-09 | 2010-06-09 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011258751A JP2011258751A (ja) | 2011-12-22 |
JP2011258751A5 JP2011258751A5 (ja) | 2013-03-14 |
JP5540911B2 true JP5540911B2 (ja) | 2014-07-02 |
Family
ID=45020205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010131964A Active JP5540911B2 (ja) | 2010-06-09 | 2010-06-09 | 半導体装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8390121B2 (ja) |
JP (1) | JP5540911B2 (ja) |
KR (1) | KR20110134830A (ja) |
CN (1) | CN102280416B (ja) |
DE (1) | DE102011075365B4 (ja) |
TW (1) | TWI431731B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5842929B2 (ja) * | 2011-11-22 | 2016-01-13 | 富士通株式会社 | 電子部品およびその製造方法 |
US9025294B2 (en) * | 2012-02-24 | 2015-05-05 | Hamilton Sundstrand Corporation | System and method for controlling solid state circuit breakers |
US9618653B2 (en) | 2013-03-29 | 2017-04-11 | Stmicroelectronics Pte Ltd. | Microelectronic environmental sensing module |
US9176089B2 (en) | 2013-03-29 | 2015-11-03 | Stmicroelectronics Pte Ltd. | Integrated multi-sensor module |
US9082681B2 (en) | 2013-03-29 | 2015-07-14 | Stmicroelectronics Pte Ltd. | Adhesive bonding technique for use with capacitive micro-sensors |
GB2514547A (en) * | 2013-05-23 | 2014-12-03 | Melexis Technologies Nv | Packaging of semiconductor devices |
US9000542B2 (en) | 2013-05-31 | 2015-04-07 | Stmicroelectronics Pte Ltd. | Suspended membrane device |
US10429330B2 (en) | 2016-07-18 | 2019-10-01 | Stmicroelectronics Pte Ltd | Gas analyzer that detects gases, humidity, and temperature |
US10254261B2 (en) | 2016-07-18 | 2019-04-09 | Stmicroelectronics Pte Ltd | Integrated air quality sensor that detects multiple gas species |
US10557812B2 (en) | 2016-12-01 | 2020-02-11 | Stmicroelectronics Pte Ltd | Gas sensors |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2649157B2 (ja) | 1987-03-10 | 1997-09-03 | 三菱電機株式会社 | 半導体装置 |
JPH06104268A (ja) | 1992-09-21 | 1994-04-15 | Mitsubishi Electric Corp | ゲッタリング効果を持たせた半導体基板およびその製造方法 |
JPH06267935A (ja) * | 1993-03-12 | 1994-09-22 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH07297560A (ja) | 1994-04-28 | 1995-11-10 | Hitachi Ltd | 多層プリント配線基板およびその実装構造体 |
JPH08178768A (ja) * | 1994-12-20 | 1996-07-12 | Matsushita Electric Ind Co Ltd | 力学量センサ |
JPH08316442A (ja) * | 1995-05-24 | 1996-11-29 | Mitsubishi Materials Corp | Soi基板及びその製造方法 |
JP3050193B2 (ja) * | 1997-11-12 | 2000-06-12 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US6049365A (en) * | 1998-05-07 | 2000-04-11 | Mitsubishi Denki Kabushiki Kaisha | Liquid crystal displaying apparatus with a converter not exposed to liquid crystal |
JP2001119040A (ja) | 1999-10-18 | 2001-04-27 | Denso Corp | 半導体力学量センサとその製造方法 |
KR100514240B1 (ko) | 2001-06-21 | 2005-09-13 | 미쓰비시덴키 가부시키가이샤 | 가속도 센서 및 그 제조방법 |
JP2003240797A (ja) * | 2002-02-18 | 2003-08-27 | Mitsubishi Electric Corp | 半導体加速度センサ |
KR100725010B1 (ko) | 2003-05-26 | 2007-06-04 | 가부시키가이샤 무라타 세이사쿠쇼 | 압전 전자 부품, 및 그 제조방법, 통신기 |
JP4608993B2 (ja) * | 2004-08-06 | 2011-01-12 | ソニー株式会社 | 微小電気機械素子とその製造方法、及び電子機器 |
JP2006310508A (ja) | 2005-04-28 | 2006-11-09 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
DE102005028704B4 (de) | 2005-06-20 | 2016-09-08 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauteils mit in Kunststoffgehäusemasse eingebetteten Halbleiterbauteilkomponenten |
JP4633574B2 (ja) * | 2005-08-08 | 2011-02-16 | 三菱電機株式会社 | 薄膜構造体およびその製造方法 |
JP2007274096A (ja) * | 2006-03-30 | 2007-10-18 | Yamaha Corp | ダイヤフラム及びその製造方法 |
JP2007322271A (ja) * | 2006-06-01 | 2007-12-13 | Mitsubishi Electric Corp | 慣性力センサ及びその製造方法 |
CN101427365B (zh) * | 2006-09-06 | 2011-06-15 | 日立金属株式会社 | 半导体传感器件的制造方法 |
JP5181452B2 (ja) | 2006-09-29 | 2013-04-10 | 三菱電機株式会社 | 加速度センサ |
JP2009016717A (ja) * | 2007-07-09 | 2009-01-22 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
-
2010
- 2010-06-09 JP JP2010131964A patent/JP5540911B2/ja active Active
-
2011
- 2011-02-09 TW TW100104251A patent/TWI431731B/zh active
- 2011-02-11 US US13/025,633 patent/US8390121B2/en active Active
- 2011-05-05 DE DE102011075365.6A patent/DE102011075365B4/de active Active
- 2011-06-01 KR KR1020110052558A patent/KR20110134830A/ko not_active Application Discontinuation
- 2011-06-08 CN CN201110165501.1A patent/CN102280416B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
DE102011075365A1 (de) | 2011-12-15 |
TW201208009A (en) | 2012-02-16 |
TWI431731B (zh) | 2014-03-21 |
US20110303992A1 (en) | 2011-12-15 |
CN102280416A (zh) | 2011-12-14 |
DE102011075365B4 (de) | 2016-06-09 |
US8390121B2 (en) | 2013-03-05 |
CN102280416B (zh) | 2014-04-09 |
KR20110134830A (ko) | 2011-12-15 |
JP2011258751A (ja) | 2011-12-22 |
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