CN102280416B - 半导体装置及其制造方法 - Google Patents
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Abstract
本发明目的在于提供一种半导体装置,能够作为表面保护膜而形成氮化膜并且抑制模制树脂的剥离。本发明所涉及的半导体装置,具有衬底、在该衬底上形成的元件、在该衬底上形成的氮化膜、在该氮化膜上形成的防止剥离膜、以及覆盖该防止剥离膜和该元件而形成的模制树脂。而且,该半导体装置的特征在于,该防止剥离膜为残留有压缩应力的膜。
Description
技术领域
本发明涉及形成了模制树脂的半导体装置及其制造方法。
背景技术
半导体装置有时具有在衬底上形成的元件和覆盖衬底及元件而形成的模制树脂。为了保护元件以免受到来自外部的水分或异物等的影响而形成模制树脂。在这里,模制树脂隔着作为表面保护膜而形成于衬底或元件的氮化膜覆盖衬底和元件的情况较多。在专利文件1中,公开有在作为表面保护膜而形成的氮化膜上具有模制树脂的半导体装置。在这种情况下,最好模制树脂对于氮化膜无间隙地紧密附着。
专利文献1:日本特开2006-310508号公报
氮化膜因为优于耐湿性或机械强度而被广泛用作表面保护膜。然而,由于氮化膜中残存有较大的拉伸应力,因此曾有过若在氮化膜上形成模制树脂则模制树脂剥离的情形。
发明内容
本发明是为解决如上所述的课题而完成的,目的在于提供一种半导体装置及其制造方法,能够作为表面保护膜而形成氮化膜并且抑制模制树脂的剥离。
本发明所涉及的半导体装置,具有衬底、在该衬底上形成的元件、在该衬底上形成的氮化膜、在该氮化膜上形成的防止剥离膜、以及覆盖该防止剥离膜和该元件而形成的模制树脂。而且,该半导体装置的特征在于,该防止剥离膜是残留有压缩应力的膜。
本发明所涉及的半导体装置的制造方法,其特征在于具有:在衬底上形成氮化膜的工序、在该氮化膜上形成多晶硅的工序、在该氮化膜上形成用氢氟酸能够除去的牺牲膜的工序、利用该牺牲膜形成导体的工序、通过氢氟酸除去该牺牲膜的工序、以及在该多晶硅上形成模制树脂的工序。
如果利用本发明,则能够作为表面保护膜而形成氮化膜并且抑制模制树脂的剥离。
附图说明
图1是本发明的实施方式1所涉及的半导体装置的剖面图。
图2是本发明的实施方式1所涉及的半导体装置的俯视图。
图3是流程图,示出本发明的实施方式1所涉及的半导体装置的制造方法。
图4是示出在氮化膜上形成了多晶硅的状态的图。
图5是示出形成了牺牲膜的状态的图。
图6是示出形成了可动部、支撑部以及密封部的状态的图。
图7是示出形成了电极垫的状态的图。
图8是示出牺牲膜利用氢氟酸进行了蚀刻的状态的图。
图9是示出安装了玻璃罩的状态的图。
图10是示出本发明的实施方式1所涉及的半导体装置的变形例的俯视图。
图11是示出本发明的实施方式1所涉及的半导体装置的变形例的俯视图。
图12是本发明的实施方式2所涉及的半导体装置的剖面图。
(附图标记说明)
10半导体装置;18衬底;20氮化膜;22多晶硅;36模制树脂。
具体实施方式
实施方式1
图1是本发明的实施方式1所涉及的半导体装置的剖面图。半导体装置10用加速度传感器构成。半导体装置10具有Si板12。Si板12上形成有绝缘膜14。绝缘层14上形成有布线层16。绝缘膜14的表面和布线层16的表面无阶梯差(段差)地连接。另外,Si板12、绝缘膜14以及布线层16可合起来称为衬底18。
绝缘膜14上和布线层16上形成有氮化膜20。氮化膜20具有使布线层16的一部分露出的开口。氮化膜20上形成有多晶硅22。多晶硅22中残存有压缩应力。
半导体装置10中,形成有成为加速度传感器的梁的可动部24。此外,形成有支撑可动部24的支撑部26。支撑部26通过氮化膜20的开口而与布线层16相接。氮化膜20上包围可动部24和支撑部26而形成有密封部28。密封部28上固定有玻璃罩30。由密封部28和玻璃罩30使得空间34得以确保。空间34内部密封有所述可动部24和支撑部26。另外,可动部24、支撑部26、密封部28以及玻璃罩30可合起来称为传感器部。
氮化膜20上形成有电极垫32。电极垫(electrode pad)32是为了与外部取得电气连接而形成的。电极垫32的一部分通过氮化膜20的开口而与布线层16相接。因此,电极垫32和支撑部26通过布线层16而电气连接。然后,覆盖多晶硅22、传感器部以及电极垫32而形成有模制树脂36。为了保护传感器部及电极垫32以免受到水分或异物等的影响而形成模制树脂36。
图2是本发明的实施方式1所涉及的半导体装置的俯视图。在图2中省略模制树脂36的显示。如图2所示,上述多晶硅22在传感器部与电极垫32之间、以及电极垫32彼此之间形成。
图3是流程图,示出本发明的实施方式1所涉及的半导体装置的制造方法。按照图3,就半导体装置10的制造方法进行说明。首先,在氮化膜20上形成多晶硅22(步骤50)。图4是示出在氮化膜20上形成了多晶硅22的状态的图。
接着,在氮化膜20上形成牺牲膜70(步骤52)。牺牲膜70是一种这样的膜,被用于决定可动部24、支撑部26以及密封部28的形状,其后被除去。图5是示出形成了牺牲膜70的状态的图。
接着,形成可动部24、支撑部26以及密封部28(步骤54)。可动部24、支撑部26以及密封部28都是导体。图6是示出形成了可动部24、支撑部26以及密封部28的状态的图。接着形成电极垫32(步骤56)。图7是示出形成了电极垫32的状态的图。
接着,除去牺牲膜70(步骤58)。牺牲膜70通过利用氢氟酸的蚀刻来除去。此时,多晶硅22不会由于氢氟酸而被蚀刻从而得以残存。图8是示出牺牲膜70利用氢氟酸进行了蚀刻的状态的图。
接着,将玻璃罩30安装在密封部28上(步骤60)。图9是示出安装了玻璃罩30的状态的图。最后,形成模制树脂36(步骤62)。
通过上述制造方法可制造图1所示的半导体装置10。
可是,由于在氮化膜中残存较强的拉伸应力,因此曾有过若在氮化膜上形成模制树脂则模制树脂剥离的情形。然而,如果借助本发明的实施方式1所涉及的半导体装置10则能够防止模制树脂的剥离。即,在残留拉伸应力的氮化膜20上,形成有残留压缩应力的多晶硅22,因此二者的应力相抵消而变弱。然后,模制树脂36形成在应力较弱的多晶硅22上。由此,能够形成氮化膜20,并且抑制模制树脂36的剥离。
如参照图2所说明的,多晶硅22在传感器部与电极垫32之间、以及电极垫32彼此之间形成。由此,如果借助本发明的实施方式1所涉及的半导体装置10,则能够防止在传感器部与电极垫32之间的模制树脂的剥离。因此,能够防止传感器部与电极垫32之间的短路。此外,因为能够防止电极垫32之间的模制树脂的剥离,所以还能够防止电极垫32之间的短路。
为了防止模制树脂的剥离,还必须考虑模制树脂和与其相接的材料的线膨胀系数。在本发明的实施方式1所涉及的半导体装置10中,模制树脂36、多晶硅22、氮化膜20的线膨胀系数分别为17[ppm/K]、2.5[ppm/K]、2.8[ppm/K]左右。因为模制树脂36和与其相接的多晶硅22及氮化膜20的线膨胀系数的值近似,所以能够防止由线膨胀系数的差异造成的模制树脂的剥离。
多晶硅22是无法通过氢氟酸蚀刻的材料。因此,可以在氢氟酸处理前形成多晶硅22。由此能够在氮化膜20形成后的表面大致平坦的状态下形成多晶硅22,所以多晶硅22的构图等的加工能够较容易地进行。
图10是示出本发明的实施方式1所涉及的半导体装置的变形例的俯视图。多晶硅72包围电极垫32而形成。因此,可以防止在电极垫32周围的模制树脂的剥离。图11是示出本发明的实施方式1所涉及的半导体装置的变形例的俯视图。多晶硅74包围电极垫32和传感器部而形成。由此,可以防止在电极垫32周围以及传感器部周围的模制树脂的剥离。
虽然半导体装置10是用加速度传感器形成的,但是本发明并不限定于此。即,本发明可以广泛应用于在氮化膜上形成模制树脂的场合。此外,本发明的实施方式1中的传感器部,只要是某个元件即可并不特别限定。
在本发明的实施方式1所涉及的半导体装置10中,虽然作为防止模制树脂36剥离的防止剥离膜而使用了多晶硅22,但是本发明并不限定于此。对防止剥离膜所要求的特性,是残留有压缩应力、线膨胀系数与氮化膜及模制树脂的线膨胀系数近似、无法通过氢氟酸进行蚀刻。只要具有这些特性,防止剥离膜并不特别限定。因此,可以将非晶硅膜用作防止剥离膜。另外,在没有必要在氢氟酸处理前形成防止剥离膜时,防止剥离膜也可以是能够通过氢氟酸进行蚀刻的材料。
实施方式2
图12是本发明的实施方式2所涉及的半导体装置的剖面图。关于半导体装置76,由于与本发明的实施方式1所涉及的半导体装置10的类似点较多,所以仅说明与半导体装置10不同的地方。半导体装置76具有多晶硅78。多晶硅78不仅在传感器部分和电极垫32之间,还在密封部28的正下方形成。由此,在密封部28和布线层16之间,会形成有氮化膜20和多晶硅78。
如果借助本发明的实施方式2所涉及的半导体装置,即使氮化膜存在针孔等的缺陷,此后覆盖该针孔而形成较高电阻的多晶硅78。由此,即使在密封部28的正下方区域形成有布线层16,也能够切实地防止二者间的短路。另外,半导体装置76可以进行与本发明的实施方式1同等程度的变形。
Claims (7)
1.一种半导体装置,其特征在于,具有:
衬底;
在所述衬底上形成的元件;
在所述衬底上形成的氮化膜;
在所述氮化膜上形成的防止剥离膜;
覆盖所述防止剥离膜和所述元件而形成的模制树脂;以及
在所述衬底上形成并且用所述模制树脂覆盖的多个电极垫,
所述防止剥离膜为残留有压缩应力的膜,
所述防止剥离膜以包围所述多个电极垫和所述元件的方式形成。
2.如权利要求1所述的半导体装置,其特征在于:
具有在所述衬底上形成并且用所述模制树脂覆盖的多个电极垫,
所述防止剥离膜在所述元件与所述多个电极垫之间、以及所述多个电极垫之间形成。
3.如权利要求1或2所述的半导体装置,其特征在于:
所述元件是加速度传感器的传感器部,
在所述衬底内形成布线层,
所述传感器部和所述多个电极垫通过所述布线层电气连接,
所述防止剥离膜为无法通过氢氟酸蚀刻的膜。
4.如权利要求1所述的半导体装置,其特征在于:
所述元件具有在所述防止剥离膜上形成的导体,
所述衬底中,在所述导体的正下方区域形成布线层。
5.如权利要求1所述的半导体装置,其特征在于,
所述防止剥离膜利用多晶硅或者非晶硅形成。
6.一种半导体装置的制造方法,其特征在于,具有:
在衬底上形成氮化膜的工序,
在所述氮化膜上形成多晶硅的工序,
在所述氮化膜上形成用氢氟酸能够除去的牺牲膜的工序,
利用所述牺牲膜形成导体的工序,
通过氢氟酸除去所述牺牲膜的工序,以及
在所述多晶硅上形成模制树脂的工序。
7.一种半导体装置,其特征在于,具有:
衬底;
在所述衬底上形成的元件;
在所述衬底上形成的氮化膜;
在所述氮化膜上形成的防止剥离膜;
覆盖所述防止剥离膜和所述元件而形成的模制树脂;
在所述防止剥离膜上形成的导体;以及
在所述衬底中在所述导体的正下方区域形成的布线层,
所述防止剥离膜为残留有压缩应力的膜。
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JP2010131964A JP5540911B2 (ja) | 2010-06-09 | 2010-06-09 | 半導体装置 |
JP2010-131964 | 2010-06-09 |
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JP (1) | JP5540911B2 (zh) |
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CN (1) | CN102280416B (zh) |
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WO2013076830A1 (ja) * | 2011-11-22 | 2013-05-30 | 富士通株式会社 | 電子部品およびその製造方法 |
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US9176089B2 (en) | 2013-03-29 | 2015-11-03 | Stmicroelectronics Pte Ltd. | Integrated multi-sensor module |
GB2514547A (en) * | 2013-05-23 | 2014-12-03 | Melexis Technologies Nv | Packaging of semiconductor devices |
US9000542B2 (en) * | 2013-05-31 | 2015-04-07 | Stmicroelectronics Pte Ltd. | Suspended membrane device |
US10254261B2 (en) | 2016-07-18 | 2019-04-09 | Stmicroelectronics Pte Ltd | Integrated air quality sensor that detects multiple gas species |
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US8390121B2 (en) | 2013-03-05 |
US20110303992A1 (en) | 2011-12-15 |
KR20110134830A (ko) | 2011-12-15 |
TWI431731B (zh) | 2014-03-21 |
DE102011075365A1 (de) | 2011-12-15 |
TW201208009A (en) | 2012-02-16 |
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