TWI294149B - - Google Patents
Download PDFInfo
- Publication number
- TWI294149B TWI294149B TW094142009A TW94142009A TWI294149B TW I294149 B TWI294149 B TW I294149B TW 094142009 A TW094142009 A TW 094142009A TW 94142009 A TW94142009 A TW 94142009A TW I294149 B TWI294149 B TW I294149B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating film
- forming
- capacitor
- film
- region
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims description 90
- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 54
- 230000015572 biosynthetic process Effects 0.000 claims description 43
- 238000004519 manufacturing process Methods 0.000 claims description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 239000007943 implant Substances 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 206010011469 Crying Diseases 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 229910052770 Uranium Inorganic materials 0.000 claims 1
- 210000000496 pancreas Anatomy 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052681 coesite Inorganic materials 0.000 description 15
- 229910052906 cristobalite Inorganic materials 0.000 description 15
- 229910052682 stishovite Inorganic materials 0.000 description 15
- 229910052905 tridymite Inorganic materials 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 14
- 229910052732 germanium Inorganic materials 0.000 description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 230000001133 acceleration Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- -1 erbium ions Chemical class 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 210000001624 hip Anatomy 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010454 slate Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0144—Manufacturing their gate insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005005590 | 2005-01-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200629421A TW200629421A (en) | 2006-08-16 |
| TWI294149B true TWI294149B (enExample) | 2008-03-01 |
Family
ID=36757122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094142009A TW200629421A (en) | 2005-01-12 | 2005-11-30 | Method of producing semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7419874B2 (enExample) |
| CN (1) | CN100527387C (enExample) |
| TW (1) | TW200629421A (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8828855B2 (en) | 2007-04-30 | 2014-09-09 | Texas Instruments Incorporated | Transistor performance using a two-step damage anneal |
| US7521330B2 (en) * | 2007-06-04 | 2009-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods for forming capacitor structures |
| JP2011097029A (ja) * | 2009-09-30 | 2011-05-12 | Tokyo Electron Ltd | 半導体装置の製造方法 |
| KR20130081505A (ko) * | 2012-01-09 | 2013-07-17 | 삼성전자주식회사 | 반도체 장치, 반도체 시스템, 상기 반도체 장치의 제조 방법 |
| US20150155162A1 (en) * | 2013-12-03 | 2015-06-04 | Spansion Llc | Reduction of Charging Induced Damage in Photolithography Wet Process |
| JP2015115390A (ja) * | 2013-12-10 | 2015-06-22 | シナプティクス・ディスプレイ・デバイス合同会社 | 半導体集積回路装置 |
| CN104112742B (zh) * | 2014-06-30 | 2017-05-10 | 京东方科技集团股份有限公司 | 一种柔性基板、柔性显示面板和柔性显示装置 |
| TWI801670B (zh) * | 2018-10-04 | 2023-05-11 | 日商索尼半導體解決方案公司 | 半導體元件及半導體裝置 |
| CN110112064B (zh) * | 2019-05-21 | 2020-06-30 | 长江存储科技有限责任公司 | 一种半导体器件及其制备方法 |
| CN115223855B (zh) * | 2021-04-21 | 2025-07-29 | 华邦电子股份有限公司 | 半导体器件的制造方法 |
| CN114649361B (zh) * | 2022-03-22 | 2024-03-29 | 上海华力微电子有限公司 | 图像传感器的制造方法 |
| CN115312590A (zh) * | 2022-09-02 | 2022-11-08 | 杭州富芯半导体有限公司 | 半导体制备方法和半导体结构 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH118352A (ja) * | 1997-06-14 | 1999-01-12 | Toshiba Microelectron Corp | 半導体集積回路装置及びその製造方法 |
| KR100477788B1 (ko) * | 1999-12-28 | 2005-03-22 | 매그나칩 반도체 유한회사 | 커패시터가 접속된 포토다이오드를 갖는 씨모스이미지센서 및 그 제조방법 |
| JP2002026261A (ja) | 2000-07-04 | 2002-01-25 | Denso Corp | Ｍｏｓ型キャパシタの製造方法 |
| DE10240423B4 (de) * | 2002-09-02 | 2007-02-22 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterelement mit einem Feldeffekttransistor und einem passiven Kondensator mit reduziertem Leckstrom und einer verbesserten Kapazität pro Einheitsfläche und Verfahren zu dessen Herstellung |
| KR100771865B1 (ko) * | 2006-01-18 | 2007-11-01 | 삼성전자주식회사 | 스토리지 캐패시터와 고내압 캐패시터를 구비하는 반도체소자의 제조방법 및 그를 사용하여 제조된 반도체 소자 |
-
2005
- 2005-11-30 TW TW094142009A patent/TW200629421A/zh not_active IP Right Cessation
-
2006
- 2006-01-10 CN CNB2006100048665A patent/CN100527387C/zh not_active Expired - Fee Related
- 2006-01-12 US US11/330,402 patent/US7419874B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN100527387C (zh) | 2009-08-12 |
| US20060172488A1 (en) | 2006-08-03 |
| TW200629421A (en) | 2006-08-16 |
| CN1825566A (zh) | 2006-08-30 |
| US7419874B2 (en) | 2008-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI269443B (en) | Semiconductor device and method of manufacturing the same, semiconductor wafer | |
| TWI253167B (en) | Semiconductor device and method for fabricating the same | |
| TWI249843B (en) | Semiconductor device and its manufacturing method, and electronic apparatus | |
| TW462077B (en) | Semiconductor device and method of manufacturing the same | |
| TW552715B (en) | Semiconductor device having a trench isolation and method of fabricating the same | |
| TWI289930B (en) | Method for fabricating semiconductor devices | |
| TW200913229A (en) | Semiconductor device and method of manufacturing the same | |
| TWI294149B (enExample) | ||
| TW200843110A (en) | Semiconductor device manufacturing method and semiconductor device | |
| TW200522270A (en) | Method for fabricating semiconductor devices having silicided electrodes | |
| JP4718104B2 (ja) | 半導体装置 | |
| TW201041137A (en) | Semiconductor device and method for manufacturing the same | |
| TWI283047B (en) | Method of manufacturing flash memory device | |
| JP2012186438A (ja) | 不揮発性メモリ及びその製造方法 | |
| TWI299193B (en) | Method for fabricating a layer arrangement, layer arrangement and memory arrangement | |
| CN118431290B (zh) | 沟槽型功率器件、制备方法、功率模块、转换电路和车辆 | |
| TWI306631B (en) | Method for fabricating semiconductor device with dual gate structure | |
| WO2006018974A1 (ja) | 半導体装置およびその製造方法 | |
| TWI362742B (en) | Fabrication process of a semiconductor device having a capacitor | |
| TW533484B (en) | Method of patterning gate electrodes with high k gate dielectrics | |
| JP3746907B2 (ja) | 半導体装置の製造方法 | |
| JP5407645B2 (ja) | 半導体装置及びその製造方法 | |
| JP2018026455A (ja) | 半導体装置及びその製造方法 | |
| US9123579B2 (en) | 3D memory process and structures | |
| JP3770250B2 (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |