CN100527387C - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN100527387C
CN100527387C CNB2006100048665A CN200610004866A CN100527387C CN 100527387 C CN100527387 C CN 100527387C CN B2006100048665 A CNB2006100048665 A CN B2006100048665A CN 200610004866 A CN200610004866 A CN 200610004866A CN 100527387 C CN100527387 C CN 100527387C
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CN
China
Prior art keywords
mos transistor
film
zone
dielectric film
electric capacity
Prior art date
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Expired - Fee Related
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CNB2006100048665A
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English (en)
Chinese (zh)
Other versions
CN1825566A (zh
Inventor
藤岛达也
福田干夫
塚田雄二
绪方敬士
饭田伊豆雄
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of CN1825566A publication Critical patent/CN1825566A/zh
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Publication of CN100527387C publication Critical patent/CN100527387C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
CNB2006100048665A 2005-01-12 2006-01-10 半导体装置的制造方法 Expired - Fee Related CN100527387C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP005590/05 2005-01-12
JP2005005590 2005-01-12

Publications (2)

Publication Number Publication Date
CN1825566A CN1825566A (zh) 2006-08-30
CN100527387C true CN100527387C (zh) 2009-08-12

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ID=36757122

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100048665A Expired - Fee Related CN100527387C (zh) 2005-01-12 2006-01-10 半导体装置的制造方法

Country Status (3)

Country Link
US (1) US7419874B2 (enExample)
CN (1) CN100527387C (enExample)
TW (1) TW200629421A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8828855B2 (en) 2007-04-30 2014-09-09 Texas Instruments Incorporated Transistor performance using a two-step damage anneal
US7521330B2 (en) * 2007-06-04 2009-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for forming capacitor structures
JP2011097029A (ja) * 2009-09-30 2011-05-12 Tokyo Electron Ltd 半導体装置の製造方法
KR20130081505A (ko) * 2012-01-09 2013-07-17 삼성전자주식회사 반도체 장치, 반도체 시스템, 상기 반도체 장치의 제조 방법
US20150155162A1 (en) * 2013-12-03 2015-06-04 Spansion Llc Reduction of Charging Induced Damage in Photolithography Wet Process
JP2015115390A (ja) * 2013-12-10 2015-06-22 シナプティクス・ディスプレイ・デバイス合同会社 半導体集積回路装置
CN104112742B (zh) * 2014-06-30 2017-05-10 京东方科技集团股份有限公司 一种柔性基板、柔性显示面板和柔性显示装置
TWI801670B (zh) * 2018-10-04 2023-05-11 日商索尼半導體解決方案公司 半導體元件及半導體裝置
CN110112064B (zh) * 2019-05-21 2020-06-30 长江存储科技有限责任公司 一种半导体器件及其制备方法
CN115223855B (zh) * 2021-04-21 2025-07-29 华邦电子股份有限公司 半导体器件的制造方法
CN114649361B (zh) * 2022-03-22 2024-03-29 上海华力微电子有限公司 图像传感器的制造方法
CN115312590A (zh) * 2022-09-02 2022-11-08 杭州富芯半导体有限公司 半导体制备方法和半导体结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH118352A (ja) * 1997-06-14 1999-01-12 Toshiba Microelectron Corp 半導体集積回路装置及びその製造方法
KR100477788B1 (ko) * 1999-12-28 2005-03-22 매그나칩 반도체 유한회사 커패시터가 접속된 포토다이오드를 갖는 씨모스이미지센서 및 그 제조방법
JP2002026261A (ja) 2000-07-04 2002-01-25 Denso Corp Ｍｏｓ型キャパシタの製造方法
DE10240423B4 (de) * 2002-09-02 2007-02-22 Advanced Micro Devices, Inc., Sunnyvale Halbleiterelement mit einem Feldeffekttransistor und einem passiven Kondensator mit reduziertem Leckstrom und einer verbesserten Kapazität pro Einheitsfläche und Verfahren zu dessen Herstellung
KR100771865B1 (ko) * 2006-01-18 2007-11-01 삼성전자주식회사 스토리지 캐패시터와 고내압 캐패시터를 구비하는 반도체소자의 제조방법 및 그를 사용하여 제조된 반도체 소자

Also Published As

Publication number Publication date
US20060172488A1 (en) 2006-08-03
TW200629421A (en) 2006-08-16
CN1825566A (zh) 2006-08-30
TWI294149B (enExample) 2008-03-01
US7419874B2 (en) 2008-09-02

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