TW200629421A - Method of producing semiconductor device - Google Patents

Method of producing semiconductor device

Info

Publication number
TW200629421A
TW200629421A TW094142009A TW94142009A TW200629421A TW 200629421 A TW200629421 A TW 200629421A TW 094142009 A TW094142009 A TW 094142009A TW 94142009 A TW94142009 A TW 94142009A TW 200629421 A TW200629421 A TW 200629421A
Authority
TW
Taiwan
Prior art keywords
capacitor
film
etching
semiconductor device
sio2 film
Prior art date
Application number
TW094142009A
Other languages
English (en)
Other versions
TWI294149B (zh
Inventor
Tastuya Fujishima
Mikio Fukuda
Yuji Tsukada
Keiji Ogata
Izuo Iida
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200629421A publication Critical patent/TW200629421A/zh
Application granted granted Critical
Publication of TWI294149B publication Critical patent/TWI294149B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
TW094142009A 2005-01-12 2005-11-30 Method of producing semiconductor device TW200629421A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005005590 2005-01-12

Publications (2)

Publication Number Publication Date
TW200629421A true TW200629421A (en) 2006-08-16
TWI294149B TWI294149B (zh) 2008-03-01

Family

ID=36757122

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142009A TW200629421A (en) 2005-01-12 2005-11-30 Method of producing semiconductor device

Country Status (3)

Country Link
US (1) US7419874B2 (zh)
CN (1) CN100527387C (zh)
TW (1) TW200629421A (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8828855B2 (en) 2007-04-30 2014-09-09 Texas Instruments Incorporated Transistor performance using a two-step damage anneal
US7521330B2 (en) * 2007-06-04 2009-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for forming capacitor structures
JP2011097029A (ja) * 2009-09-30 2011-05-12 Tokyo Electron Ltd 半導体装置の製造方法
KR20130081505A (ko) * 2012-01-09 2013-07-17 삼성전자주식회사 반도체 장치, 반도체 시스템, 상기 반도체 장치의 제조 방법
US20150155162A1 (en) * 2013-12-03 2015-06-04 Spansion Llc Reduction of Charging Induced Damage in Photolithography Wet Process
JP2015115390A (ja) * 2013-12-10 2015-06-22 シナプティクス・ディスプレイ・デバイス合同会社 半導体集積回路装置
CN104112742B (zh) * 2014-06-30 2017-05-10 京东方科技集团股份有限公司 一种柔性基板、柔性显示面板和柔性显示装置
CN110112064B (zh) * 2019-05-21 2020-06-30 长江存储科技有限责任公司 一种半导体器件及其制备方法
CN114649361B (zh) * 2022-03-22 2024-03-29 上海华力微电子有限公司 图像传感器的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH118352A (ja) * 1997-06-14 1999-01-12 Toshiba Microelectron Corp 半導体集積回路装置及びその製造方法
KR100477788B1 (ko) * 1999-12-28 2005-03-22 매그나칩 반도체 유한회사 커패시터가 접속된 포토다이오드를 갖는 씨모스이미지센서 및 그 제조방법
JP2002026261A (ja) 2000-07-04 2002-01-25 Denso Corp Ｍｏｓ型キャパシタの製造方法
DE10240423B4 (de) * 2002-09-02 2007-02-22 Advanced Micro Devices, Inc., Sunnyvale Halbleiterelement mit einem Feldeffekttransistor und einem passiven Kondensator mit reduziertem Leckstrom und einer verbesserten Kapazität pro Einheitsfläche und Verfahren zu dessen Herstellung
KR100771865B1 (ko) * 2006-01-18 2007-11-01 삼성전자주식회사 스토리지 캐패시터와 고내압 캐패시터를 구비하는 반도체소자의 제조방법 및 그를 사용하여 제조된 반도체 소자

Also Published As

Publication number Publication date
CN100527387C (zh) 2009-08-12
TWI294149B (zh) 2008-03-01
US20060172488A1 (en) 2006-08-03
CN1825566A (zh) 2006-08-30
US7419874B2 (en) 2008-09-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees