JP2006100808A5 - - Google Patents

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Publication number
JP2006100808A5
JP2006100808A5 JP2005246919A JP2005246919A JP2006100808A5 JP 2006100808 A5 JP2006100808 A5 JP 2006100808A5 JP 2005246919 A JP2005246919 A JP 2005246919A JP 2005246919 A JP2005246919 A JP 2005246919A JP 2006100808 A5 JP2006100808 A5 JP 2006100808A5
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JP
Japan
Prior art keywords
mask
forming
semiconductor
inorganic film
film
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Granted
Application number
JP2005246919A
Other languages
English (en)
Japanese (ja)
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JP5025110B2 (ja
JP2006100808A (ja
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Priority to JP2005246919A priority Critical patent/JP5025110B2/ja
Priority claimed from JP2005246919A external-priority patent/JP5025110B2/ja
Publication of JP2006100808A publication Critical patent/JP2006100808A/ja
Publication of JP2006100808A5 publication Critical patent/JP2006100808A5/ja
Application granted granted Critical
Publication of JP5025110B2 publication Critical patent/JP5025110B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2005246919A 2004-08-31 2005-08-29 半導体装置の作製方法 Expired - Fee Related JP5025110B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005246919A JP5025110B2 (ja) 2004-08-31 2005-08-29 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004251926 2004-08-31
JP2004251926 2004-08-31
JP2005246919A JP5025110B2 (ja) 2004-08-31 2005-08-29 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008212906A Division JP4927045B2 (ja) 2004-08-31 2008-08-21 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006100808A JP2006100808A (ja) 2006-04-13
JP2006100808A5 true JP2006100808A5 (zh) 2008-10-09
JP5025110B2 JP5025110B2 (ja) 2012-09-12

Family

ID=36240270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005246919A Expired - Fee Related JP5025110B2 (ja) 2004-08-31 2005-08-29 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5025110B2 (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100719547B1 (ko) * 2005-03-24 2007-05-17 삼성에스디아이 주식회사 유기박막 패터닝방법, 이를 이용한 유기박막 트랜지스터 및그의 제조방법과 유기 박막 트랜지스터를 구비한평판표시장치
JP5023437B2 (ja) * 2005-04-01 2012-09-12 セイコーエプソン株式会社 半導体装置の製造方法、電気光学装置の製造方法、及び電子機器の製造方法
JP2007294723A (ja) * 2006-04-26 2007-11-08 Konica Minolta Holdings Inc 有機薄膜トランジスタの製造方法
US8900970B2 (en) * 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
JP5256583B2 (ja) * 2006-05-29 2013-08-07 大日本印刷株式会社 有機半導体素子、および、有機半導体素子の製造方法
JP2007318025A (ja) * 2006-05-29 2007-12-06 Dainippon Printing Co Ltd 有機半導体素子、および、有機半導体素子の製造方法
JP5098269B2 (ja) * 2006-09-26 2012-12-12 大日本印刷株式会社 有機半導体素子の製造方法
JP5098270B2 (ja) * 2006-09-26 2012-12-12 大日本印刷株式会社 有機半導体素子の製造方法
JP5147215B2 (ja) * 2006-10-31 2013-02-20 株式会社日立製作所 表示素子の画素駆動回路およびこれを利用した表示装置
JP2008135615A (ja) * 2006-11-29 2008-06-12 Sony Corp 有機半導体素子および表示装置
JP5054680B2 (ja) * 2006-12-18 2012-10-24 パナソニック株式会社 半導体デバイス
JP5103982B2 (ja) * 2007-03-28 2012-12-19 大日本印刷株式会社 有機半導体素子の製造方法
JP2009218327A (ja) * 2008-03-10 2009-09-24 Konica Minolta Holdings Inc 薄膜トランジスタの製造方法
US8389987B2 (en) 2008-11-10 2013-03-05 Nec Corporation Switching element and method for fabricating same
JPWO2011122205A1 (ja) * 2010-03-30 2013-07-08 凸版印刷株式会社 薄膜トランジスタの製造方法並びに薄膜トランジスタ及び画像表示装置
JP5656049B2 (ja) * 2010-05-26 2015-01-21 ソニー株式会社 薄膜トランジスタの製造方法
JP5598410B2 (ja) 2011-04-11 2014-10-01 大日本印刷株式会社 有機半導体素子の製造方法および有機半導体素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4815765B2 (ja) * 2004-07-29 2011-11-16 ソニー株式会社 有機半導体装置の製造方法

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