TWI263354B - Light-emitting device having PNPN structure and light-emitting device array - Google Patents

Light-emitting device having PNPN structure and light-emitting device array

Info

Publication number
TWI263354B
TWI263354B TW092103760A TW92103760A TWI263354B TW I263354 B TWI263354 B TW I263354B TW 092103760 A TW092103760 A TW 092103760A TW 92103760 A TW92103760 A TW 92103760A TW I263354 B TWI263354 B TW I263354B
Authority
TW
Taiwan
Prior art keywords
light
emitting device
diode
device array
pnpn structure
Prior art date
Application number
TW092103760A
Other languages
English (en)
Other versions
TW200305294A (en
Inventor
Seiji Ohno
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Publication of TW200305294A publication Critical patent/TW200305294A/zh
Application granted granted Critical
Publication of TWI263354B publication Critical patent/TWI263354B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
    • B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0033—Devices characterised by their operation having Schottky barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Logic Circuits (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Thyristors (AREA)
TW092103760A 2002-02-25 2003-02-24 Light-emitting device having PNPN structure and light-emitting device array TWI263354B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002047865A JP4292747B2 (ja) 2002-02-25 2002-02-25 発光サイリスタおよび自己走査型発光素子アレイ

Publications (2)

Publication Number Publication Date
TW200305294A TW200305294A (en) 2003-10-16
TWI263354B true TWI263354B (en) 2006-10-01

Family

ID=27750720

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092103760A TWI263354B (en) 2002-02-25 2003-02-24 Light-emitting device having PNPN structure and light-emitting device array

Country Status (5)

Country Link
US (3) US7193250B2 (zh)
JP (1) JP4292747B2 (zh)
CN (1) CN100377372C (zh)
TW (1) TWI263354B (zh)
WO (1) WO2003071609A1 (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4292747B2 (ja) * 2002-02-25 2009-07-08 富士ゼロックス株式会社 発光サイリスタおよび自己走査型発光素子アレイ
EP1798772A2 (fr) 2005-12-16 2007-06-20 St Microelectronics S.A. Thyristor optimisé pour une commande HF sinusoïdale
JP2007250853A (ja) * 2006-03-16 2007-09-27 Fuji Xerox Co Ltd 自己走査型発光素子アレイ
JP5229034B2 (ja) * 2008-03-28 2013-07-03 サンケン電気株式会社 発光装置
US7968902B2 (en) * 2008-03-31 2011-06-28 Bridgelux, Inc. Light emitting devices with constant forward voltage
JP4682231B2 (ja) 2008-08-01 2011-05-11 株式会社沖データ 光プリントヘッドおよび画像形成装置
JP2010045230A (ja) 2008-08-13 2010-02-25 Fuji Xerox Co Ltd 発光素子チップ、露光装置および画像形成装置
US20100328416A1 (en) * 2009-06-26 2010-12-30 Fuji Xerox Co., Ltd. Light emitting device, print head, image forming apparatus, light amount correction method of print head and computer readable medium
JP4614017B1 (ja) 2009-07-22 2011-01-19 富士ゼロックス株式会社 発光装置、プリントヘッドおよび画像形成装置
JP2011044636A (ja) * 2009-08-24 2011-03-03 Fuji Xerox Co Ltd 自己走査型発光素子アレイおよびその製造方法
JP5333075B2 (ja) * 2009-09-04 2013-11-06 富士ゼロックス株式会社 発光装置、自己走査型発光素子アレイの駆動方法、プリントヘッドおよび画像形成装置
JP5636655B2 (ja) * 2009-09-16 2014-12-10 富士ゼロックス株式会社 発光チップ、プリントヘッドおよび画像形成装置
JP5423275B2 (ja) * 2009-09-17 2014-02-19 富士ゼロックス株式会社 発光素子
JP5402456B2 (ja) * 2009-09-18 2014-01-29 富士ゼロックス株式会社 発光装置、プリントヘッドおよび画像形成装置
JP5042329B2 (ja) * 2010-03-24 2012-10-03 株式会社沖データ 駆動装置、光プリントヘッド及び画像形成装置
JP5445269B2 (ja) * 2010-03-29 2014-03-19 富士ゼロックス株式会社 発光装置、発光装置の駆動方法、プリントヘッドおよび画像形成装置
JP5085689B2 (ja) * 2010-06-30 2012-11-28 株式会社沖データ 駆動装置、プリントヘッド及び画像形成装置
CN101908511B (zh) * 2010-07-27 2012-07-25 南京大学 一种金属衬底的氮化镓肖特基整流器及其制备方法
JP2012040728A (ja) * 2010-08-17 2012-03-01 Fuji Xerox Co Ltd 発光チップ、発光装置、プリントヘッドおよび画像形成装置
JP5760586B2 (ja) * 2011-03-29 2015-08-12 富士ゼロックス株式会社 発光装置、プリントヘッドおよび画像形成装置
JP5510469B2 (ja) * 2012-01-20 2014-06-04 富士ゼロックス株式会社 論理演算回路、発光素子チップ、露光装置および画像形成装置
KR102139681B1 (ko) 2014-01-29 2020-07-30 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 발광소자 어레이 모듈 및 발광소자 어레이 칩들을 제어하는 방법
KR20150144353A (ko) * 2014-06-16 2015-12-28 주식회사 레이토피아 발광장치 및 이의 제조방법
KR101577673B1 (ko) * 2014-06-25 2015-12-16 주식회사 레이토피아 발광장치 및 이의 제조방법
KR101715714B1 (ko) * 2015-09-22 2017-03-14 주식회사 레이토피아 발광장치 및 이의 제조방법
KR102351775B1 (ko) * 2015-11-18 2022-01-14 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 화상 형성 장치 및 이에 포함되는 발광 소자
JP7094694B2 (ja) * 2017-12-01 2022-07-04 キヤノン株式会社 発光素子アレイ及びこれを用いた露光ヘッドと画像形成装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5520388B1 (zh) * 1970-08-12 1980-06-02
DE3521079A1 (de) * 1984-06-12 1985-12-12 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Rueckwaerts leitende vollsteuergate-thyristoranordnung
JP2784010B2 (ja) * 1988-09-30 1998-08-06 日本板硝子株式会社 自己走査型発光素子アレイ
JP2784011B2 (ja) * 1988-09-30 1998-08-06 日本板硝子株式会社 自己走査型発光素子アレイ
JP2577034B2 (ja) 1988-03-18 1997-01-29 日本板硝子株式会社 自己走査形発光素子アレイおよびその駆動方法
JP2790631B2 (ja) * 1988-07-01 1998-08-27 日本板硝子株式会社 自己走査形発光素子アレイ
EP0917213A1 (en) * 1988-03-18 1999-05-19 Nippon Sheet Glass Co., Ltd. Self-scanning light-emitting element array
US5814841A (en) * 1988-03-18 1998-09-29 Nippon Sheet Glass Co., Ltd. Self-scanning light-emitting array
JPH0262651A (ja) 1988-08-29 1990-03-02 Nec Corp 並列計算機における相互排除方式
JP2784052B2 (ja) * 1988-10-19 1998-08-06 日本板硝子株式会社 自己走査型発光素子アレイおよびその駆動方法
JP2577089B2 (ja) * 1988-11-10 1997-01-29 日本板硝子株式会社 発光装置およびその駆動方法
JP2769023B2 (ja) * 1990-04-23 1998-06-25 日本板硝子株式会社 発光メモリ素子アレイ、及びそれを用いた受光・発光モジュール
DE69033837T2 (de) * 1989-07-25 2002-05-29 Nippon Sheet Glass Co., Ltd. Lichtemittierende Vorrichtung
JP2807910B2 (ja) * 1989-12-22 1998-10-08 日本板硝子株式会社 発光素子アレイ
EP1237203A2 (en) * 1995-09-25 2002-09-04 Nippon Sheet Glass Co., Ltd. Surface light-emitting element and self-scanning type light-emitting device
JP3693204B2 (ja) * 1996-12-06 2005-09-07 株式会社日立製作所 半導体集積回路装置
JP2001088345A (ja) * 1999-09-20 2001-04-03 Sanyo Electric Co Ltd 光プリントヘッド
JP4362905B2 (ja) * 1999-09-21 2009-11-11 富士ゼロックス株式会社 自己走査型発光装置、書き込み用光源および光プリンタ
JP2001326383A (ja) * 2000-05-16 2001-11-22 Hitachi Cable Ltd 発光ダイオードアレイ
JP2003142492A (ja) * 2001-10-30 2003-05-16 Sumitomo Chem Co Ltd ３−５族化合物半導体および半導体装置
JP4292747B2 (ja) * 2002-02-25 2009-07-08 富士ゼロックス株式会社 発光サイリスタおよび自己走査型発光素子アレイ

Also Published As

Publication number Publication date
JP2003249681A (ja) 2003-09-05
US7834363B2 (en) 2010-11-16
JP4292747B2 (ja) 2009-07-08
TW200305294A (en) 2003-10-16
CN100377372C (zh) 2008-03-26
US20050224810A1 (en) 2005-10-13
US7193250B2 (en) 2007-03-20
US7518152B2 (en) 2009-04-14
US20090166646A1 (en) 2009-07-02
US20070057279A1 (en) 2007-03-15
WO2003071609A1 (fr) 2003-08-28
CN1623239A (zh) 2005-06-01

Similar Documents

Publication Publication Date Title
TWI263354B (en) Light-emitting device having PNPN structure and light-emitting device array
EP2290642A3 (en) Semiconductor device for a TFTdisplay matrix
AU2003241280A1 (en) Method of fabricating vertical structure leds
EP2065950A3 (en) Organic electroluminescent device
EP2045889A3 (en) Nitride semiconductor light-emitting device
ATE482473T1 (de) Verbessertes fenster für gan-led
TW200614614A (en) Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof
EP1560275A3 (en) Semiconductor light emitting devices including current spreading layers
EP1193741A3 (en) Semiconductor device having thin film transistor for supplying current to driven element
EP1686625A3 (en) Light emitting devices
SG135952A1 (en) Semiconductor diodes with fin structure
EP2237334A3 (en) Group III nitride based light emitting diode
EP1793654A3 (en) Organic electroluminescent device
IT1255897B (it) Dispositivo a semiconduttore e procedimento per la sua fabbricazione
WO2004054326A3 (en) Electroluminescent devices with low work function anode
TWI266438B (en) Semiconductor light emitting device with protective element, and its manufacturing method
WO2003028110A1 (fr) Semi-conducteur
EP1189289A4 (en) NITRIDE SEMICONDUCTOR DEVICE
EP1619729A4 (en) LIGHT EMITTING DEVICE BASED ON GALLIUM NITRIDE
EP1403935A3 (en) Light emitting devices including tunnel junctions
EP2309479A3 (en) Active matrix electroluminescent display device and method for driving the same
EP2270883A3 (en) Enhanced light extraction in LEDs through the use of internal and external optical elements
EP1381096A3 (en) White organic light-emitting devices using rubrene layer
EP2259340A3 (en) Group III nitride based quantum well light emitting device structures with an indium containing capping structure
EP1058317A3 (en) Low voltage dual-well MOS device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees