TWI254831B - Thin film transistor array substrate for liquid crystal display and method for fabricating the same - Google Patents
Thin film transistor array substrate for liquid crystal display and method for fabricating the same Download PDFInfo
- Publication number
- TWI254831B TWI254831B TW089122102A TW89122102A TWI254831B TW I254831 B TWI254831 B TW I254831B TW 089122102 A TW089122102 A TW 089122102A TW 89122102 A TW89122102 A TW 89122102A TW I254831 B TWI254831 B TW I254831B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- layer
- pattern
- data
- black matrix
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 66
- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 18
- 239000010410 layer Substances 0.000 claims abstract description 122
- 239000004065 semiconductor Substances 0.000 claims abstract description 67
- 239000011159 matrix material Substances 0.000 claims abstract description 49
- 239000011241 protective layer Substances 0.000 claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 7
- 230000002079 cooperative effect Effects 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 235000012054 meals Nutrition 0.000 claims 1
- 239000002023 wood Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract description 14
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 9
- 238000003860 storage Methods 0.000 description 7
- 238000000429 assembly Methods 0.000 description 6
- 230000000712 assembly Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- -1 button Chemical compound 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 206010011469 Crying Diseases 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 229910000711 U alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 206010041232 sneezing Diseases 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 210000003813 thumb Anatomy 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000025468A KR100695299B1 (ko) | 2000-05-12 | 2000-05-12 | 액정 표시 장치용 박막 트랜지스터 기판 및 그의 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI254831B true TWI254831B (en) | 2006-05-11 |
Family
ID=19668506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089122102A TWI254831B (en) | 2000-05-12 | 2000-10-20 | Thin film transistor array substrate for liquid crystal display and method for fabricating the same |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6781651B2 (enExample) |
| JP (1) | JP4772200B2 (enExample) |
| KR (1) | KR100695299B1 (enExample) |
| TW (1) | TWI254831B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI895080B (zh) * | 2024-08-27 | 2025-08-21 | 友達光電股份有限公司 | 畫素結構 |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100695299B1 (ko) * | 2000-05-12 | 2007-03-14 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그의 제조 방법 |
| KR100623989B1 (ko) * | 2000-05-23 | 2006-09-13 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그의 수리 방법 |
| KR100695303B1 (ko) * | 2000-10-31 | 2007-03-14 | 삼성전자주식회사 | 제어 신호부 및 그 제조 방법과 이를 포함하는 액정 표시장치 및 그 제조 방법 |
| US7903209B2 (en) * | 2001-11-02 | 2011-03-08 | Samsung Electronics Co., Ltd. | Reflection-transmission type liquid crystal display device and method for manufacturing the same |
| CN100403107C (zh) * | 2001-12-11 | 2008-07-16 | 索尼公司 | 液晶显示器 |
| KR100878236B1 (ko) * | 2002-06-12 | 2009-01-13 | 삼성전자주식회사 | 금속 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터기판의 제조 방법 |
| JP2004140329A (ja) * | 2002-08-19 | 2004-05-13 | Seiko Epson Corp | 基板装置及びその製造方法、電気光学装置及び電子機器 |
| KR100870013B1 (ko) * | 2002-08-27 | 2008-11-21 | 삼성전자주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
| JP3791517B2 (ja) * | 2002-10-31 | 2006-06-28 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| KR100870700B1 (ko) * | 2002-12-09 | 2008-11-27 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
| KR100905052B1 (ko) * | 2003-02-26 | 2009-06-30 | 엘지디스플레이 주식회사 | 몰리브덴/구리 배선의 제조 방법 |
| US6995045B2 (en) * | 2003-03-05 | 2006-02-07 | Chunghwa Picture Tubes, Ltd. | Thin film transistor and method of forming thin film transistor |
| JP2004325953A (ja) * | 2003-04-25 | 2004-11-18 | Nec Lcd Technologies Ltd | 液晶表示装置 |
| KR100556702B1 (ko) * | 2003-10-14 | 2006-03-07 | 엘지.필립스 엘시디 주식회사 | 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법 |
| KR100560400B1 (ko) * | 2003-11-04 | 2006-03-14 | 엘지.필립스 엘시디 주식회사 | 수평 전계 인가형 박막 트랜지스터 기판 및 그 제조 방법 |
| KR100560405B1 (ko) * | 2003-11-04 | 2006-03-14 | 엘지.필립스 엘시디 주식회사 | 수평 전계 인가형 박막 트랜지스터 기판 및 그 제조 방법 |
| JP2005196208A (ja) * | 2004-01-06 | 2005-07-21 | Samsung Electronics Co Ltd | カラーフィルターパネル、これを有する表示装置、及びその製造方法 |
| TWI234288B (en) * | 2004-07-27 | 2005-06-11 | Au Optronics Corp | Method for fabricating a thin film transistor and related circuits |
| JP2006154168A (ja) * | 2004-11-29 | 2006-06-15 | Seiko Epson Corp | アクティブマトリクス基板、電気光学装置、電子デバイス、及びアクティブマトリクス基板の製造方法 |
| JP4667846B2 (ja) * | 2004-12-10 | 2011-04-13 | 三菱電機株式会社 | 薄膜トランジスタアレイ基板の製造方法 |
| JP4357434B2 (ja) * | 2005-02-25 | 2009-11-04 | 株式会社東芝 | 半導体装置の製造方法 |
| KR20060106168A (ko) * | 2005-04-06 | 2006-10-12 | 삼성전자주식회사 | 액정표시장치 |
| KR101141534B1 (ko) * | 2005-06-29 | 2012-05-04 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
| US7876917B2 (en) * | 2006-08-28 | 2011-01-25 | Youngtack Shim | Generic electromagnetically-countered systems and methods |
| CN103117224A (zh) * | 2013-01-21 | 2013-05-22 | 京东方科技集团股份有限公司 | 一种薄膜晶体管和阵列基板的制作方法 |
| KR101682327B1 (ko) * | 2013-06-19 | 2016-12-05 | 도판 인사츠 가부시키가이샤 | 표시 장치용 기판 및 표시 장치 |
| KR102070437B1 (ko) * | 2013-07-18 | 2020-01-29 | 삼성디스플레이 주식회사 | 액정 표시 장치의 제조 방법 |
| KR102141557B1 (ko) * | 2013-12-26 | 2020-08-05 | 엘지디스플레이 주식회사 | 어레이 기판 |
| KR20150076878A (ko) * | 2013-12-27 | 2015-07-07 | 삼성디스플레이 주식회사 | 표시장치 및 이의 제조방법 |
| JP7181776B2 (ja) * | 2018-12-05 | 2022-12-01 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP7181777B2 (ja) * | 2018-12-05 | 2022-12-01 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR20200094872A (ko) * | 2019-01-30 | 2020-08-10 | 삼성디스플레이 주식회사 | 표시 장치 |
| TWI756922B (zh) * | 2020-11-17 | 2022-03-01 | 友達光電股份有限公司 | 有機半導體裝置 |
| KR20230013666A (ko) * | 2021-07-15 | 2023-01-27 | 삼성디스플레이 주식회사 | 표시 장치 |
| JP2024002318A (ja) * | 2022-06-23 | 2024-01-11 | 株式会社ジャパンディスプレイ | 表示装置 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH023022A (ja) * | 1988-06-20 | 1990-01-08 | Fujitsu Ltd | 液晶ディスプレイ装置 |
| JPH0322221A (ja) * | 1989-06-19 | 1991-01-30 | Matsushita Electric Ind Co Ltd | 磁気記録媒体の製造方法 |
| JPH0322221U (enExample) * | 1989-07-14 | 1991-03-07 | ||
| JPH06194687A (ja) | 1992-10-30 | 1994-07-15 | Nec Corp | 透過型アクティブマトリクス型液晶素子 |
| KR100367869B1 (ko) * | 1993-09-20 | 2003-06-09 | 가부시끼가이샤 히다치 세이사꾸쇼 | 액정표시장치 |
| JP3265862B2 (ja) * | 1994-10-24 | 2002-03-18 | 株式会社日立製作所 | 液晶表示装置とその製造方法 |
| KR0169385B1 (ko) * | 1995-03-10 | 1999-03-20 | 김광호 | 블랙 매트릭스 구조가 가능한 액정용 박막 트랜지스터 기판 및 그 제조방법 |
| JPH0926601A (ja) * | 1995-07-13 | 1997-01-28 | Sony Corp | 液晶表示装置およびその製造方法 |
| JP3866783B2 (ja) * | 1995-07-25 | 2007-01-10 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
| JP3307181B2 (ja) * | 1995-07-31 | 2002-07-24 | ソニー株式会社 | 透過型表示装置 |
| JP2762964B2 (ja) * | 1995-08-30 | 1998-06-11 | 日本電気株式会社 | 液晶表示装置 |
| KR100212288B1 (ko) * | 1995-12-29 | 1999-08-02 | 윤종용 | 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법 |
| KR100223153B1 (ko) * | 1996-05-23 | 1999-10-15 | 구자홍 | 액티브 매트릭스 액정표시장치의 제조방법 및 액티브매트릭스액정표시장치 |
| JP3433779B2 (ja) * | 1996-06-19 | 2003-08-04 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
| KR19980010542U (ko) * | 1996-08-08 | 1998-05-15 | 손종표 | 다기능 방수요 |
| TWI236556B (en) * | 1996-10-16 | 2005-07-21 | Seiko Epson Corp | Substrate for a liquid crystal equipment, liquid crystal equipment and projection type display equipment |
| JP3719430B2 (ja) * | 1996-10-16 | 2005-11-24 | セイコーエプソン株式会社 | 液晶装置用基板、液晶装置および投写型表示装置 |
| JP2967758B2 (ja) * | 1997-04-11 | 1999-10-25 | 日本電気株式会社 | アクティブマトリクス型液晶表示装置及びその製造方法 |
| JP3780653B2 (ja) * | 1997-09-26 | 2006-05-31 | セイコーエプソン株式会社 | 液晶表示パネルの製造方法 |
| KR100288771B1 (ko) * | 1998-10-13 | 2001-06-01 | 윤종용 | 평면구동방식의액정표시장치 |
| JP2000250436A (ja) * | 1999-02-26 | 2000-09-14 | Nec Corp | 薄膜トランジスタアレイ及びその製造方法 |
| US6448579B1 (en) * | 2000-12-06 | 2002-09-10 | L.G.Philips Lcd Co., Ltd. | Thin film transistor array substrate for liquid crystal display and a method for fabricating the same |
| KR100695299B1 (ko) * | 2000-05-12 | 2007-03-14 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그의 제조 방법 |
| KR100623989B1 (ko) * | 2000-05-23 | 2006-09-13 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그의 수리 방법 |
-
2000
- 2000-05-12 KR KR1020000025468A patent/KR100695299B1/ko not_active Expired - Fee Related
- 2000-10-20 TW TW089122102A patent/TWI254831B/zh not_active IP Right Cessation
-
2001
- 2001-04-04 JP JP2001105655A patent/JP4772200B2/ja not_active Expired - Fee Related
- 2001-05-14 US US09/853,642 patent/US6781651B2/en not_active Expired - Lifetime
-
2004
- 2004-02-24 US US10/784,178 patent/US7154575B2/en not_active Expired - Lifetime
- 2004-09-14 US US10/939,345 patent/US20050030442A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI895080B (zh) * | 2024-08-27 | 2025-08-21 | 友達光電股份有限公司 | 畫素結構 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040165122A1 (en) | 2004-08-26 |
| KR100695299B1 (ko) | 2007-03-14 |
| US20020008798A1 (en) | 2002-01-24 |
| JP4772200B2 (ja) | 2011-09-14 |
| US20050030442A1 (en) | 2005-02-10 |
| US6781651B2 (en) | 2004-08-24 |
| KR20010104070A (ko) | 2001-11-24 |
| JP2001356372A (ja) | 2001-12-26 |
| US7154575B2 (en) | 2006-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI254831B (en) | Thin film transistor array substrate for liquid crystal display and method for fabricating the same | |
| TW539891B (en) | Liquid crystal display | |
| TW575776B (en) | Thin film transistor array panel used for a liquid crystal display and a manufacturing method thereof | |
| TWI263854B (en) | Liquid crystal display device built-in finger printing device and method of manufacturing the same | |
| TW459343B (en) | Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same | |
| TW526551B (en) | Contact portion of semiconductor device and method for manufacturing the same, and thin film transistor array panel for display device including the contact portion and method for manufacturing the same | |
| TW589499B (en) | Liquid crystal display device and a manufacturing method of the same | |
| JP5710165B2 (ja) | Ｔｆｔ−ｌｃｄアレイ基板及びその製造方法 | |
| JP4781518B2 (ja) | 反射透過複合形薄膜トランジスタ液晶表示装置 | |
| TWI258051B (en) | Liquid crystal display | |
| TWI261716B (en) | Liquid crystal display apparatus and fabrication thereof | |
| CN108336100B (zh) | 一种阵列基板及其制备方法、显示面板、显示装置 | |
| JP2003043513A (ja) | 液晶表示装置用アレー基板及びその製造方法 | |
| US11237662B2 (en) | Touch display substrate with switching device disposed between adjacent electrode blocks, method for manufacturing the same, driving method thereof, and display device thereof | |
| US20120138972A1 (en) | Array substrate and a method for fabricating the same and an electronic paper display | |
| WO2011055474A1 (ja) | アクティブマトリクス基板及びそれを備えた液晶表示パネル、並びにアクティブマトリクス基板の製造方法 | |
| CN107132710A (zh) | 一种阵列基板及其制备方法、显示面板 | |
| CN109599362B (zh) | 薄膜晶体管基板的制造方法和薄膜晶体管基板 | |
| JP2004311931A (ja) | 薄膜トランジスタアレイ基板及びその製造方法 | |
| JP2001356709A5 (enExample) | ||
| TWI321233B (en) | Liquid crystal display device using small molecule organic semiconductor material and method of fabricating the same | |
| US20180224684A1 (en) | Touch display device | |
| KR20160063722A (ko) | 액정 표시 장치 및 이의 제조 방법 | |
| TW578240B (en) | Contact portion of semiconductor device and method for manufacturing the same, thin film transistor array panel for display device including the contact portion, and method for manufacturing the same | |
| TW541588B (en) | Thin film transistor array panel and method for fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |