TWI248640B - Manufacturing method of semiconductor integrated circuit device - Google Patents

Manufacturing method of semiconductor integrated circuit device Download PDF

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Publication number
TWI248640B
TWI248640B TW093101467A TW93101467A TWI248640B TW I248640 B TWI248640 B TW I248640B TW 093101467 A TW093101467 A TW 093101467A TW 93101467 A TW93101467 A TW 93101467A TW I248640 B TWI248640 B TW I248640B
Authority
TW
Taiwan
Prior art keywords
integrated circuit
pattern
circuit device
film
semiconductor integrated
Prior art date
Application number
TW093101467A
Other languages
English (en)
Chinese (zh)
Other versions
TW200409219A (en
Inventor
Osamu Inoue
Norio Hasegawa
Shuji Ikeda
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of TW200409219A publication Critical patent/TW200409219A/zh
Application granted granted Critical
Publication of TWI248640B publication Critical patent/TWI248640B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • H10P76/00—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW093101467A 2000-10-13 2001-10-08 Manufacturing method of semiconductor integrated circuit device TWI248640B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000313513A JP3768794B2 (ja) 2000-10-13 2000-10-13 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
TW200409219A TW200409219A (en) 2004-06-01
TWI248640B true TWI248640B (en) 2006-02-01

Family

ID=18792919

Family Applications (2)

Application Number Title Priority Date Filing Date
TW093101467A TWI248640B (en) 2000-10-13 2001-10-08 Manufacturing method of semiconductor integrated circuit device
TW090124856A TWI232511B (en) 2000-10-13 2001-10-08 Fabrication method of semiconductor integrated circuit device

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW090124856A TWI232511B (en) 2000-10-13 2001-10-08 Fabrication method of semiconductor integrated circuit device

Country Status (4)

Country Link
US (2) US6686108B2 (enExample)
JP (1) JP3768794B2 (enExample)
KR (1) KR100831445B1 (enExample)
TW (2) TWI248640B (enExample)

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WO2002088843A2 (en) 2001-04-24 2002-11-07 Canon Kabushiki Kaisha Exposure method and apparatus
US7233887B2 (en) * 2002-01-18 2007-06-19 Smith Bruce W Method of photomask correction and its optimization using localized frequency analysis
JP2003287868A (ja) * 2002-03-27 2003-10-10 Nec Corp Ｏｐｃマスク並びにレーザリペア装置
US7107573B2 (en) * 2002-04-23 2006-09-12 Canon Kabushiki Kaisha Method for setting mask pattern and illumination condition
JP3984866B2 (ja) * 2002-06-05 2007-10-03 キヤノン株式会社 露光方法
JP4235404B2 (ja) * 2002-06-12 2009-03-11 キヤノン株式会社 マスクの製造方法
EP1450206B1 (en) * 2003-02-21 2016-04-20 Canon Kabushiki Kaisha Mask and its manufacturing method, exposure, and semiconductor device fabrication method
JP4886169B2 (ja) * 2003-02-21 2012-02-29 キヤノン株式会社 マスク及びその設計方法、露光方法、並びに、デバイス製造方法
EP1597631B1 (en) * 2003-02-27 2009-07-22 The University of Hong Kong Multiple exposure method for circuit performance improvement and maskset
JP2005003996A (ja) * 2003-06-12 2005-01-06 Toshiba Corp フォトマスクとフォトマスクの製造方法及びマスクデータ生成方法
JP4591809B2 (ja) * 2003-06-27 2010-12-01 エルピーダメモリ株式会社 微細化に対応したメモリアレイ領域のレイアウト方法
JP4684584B2 (ja) * 2003-07-23 2011-05-18 キヤノン株式会社 マスク及びその製造方法、並びに、露光方法
US6905899B2 (en) * 2003-09-23 2005-06-14 Macronix International Co., Ltd. Methods for forming a photoresist pattern using an anti-optical proximity effect
JP4599048B2 (ja) * 2003-10-02 2010-12-15 川崎マイクロエレクトロニクス株式会社 半導体集積回路のレイアウト構造、半導体集積回路のレイアウト方法、およびフォトマスク
US7582394B2 (en) * 2003-10-06 2009-09-01 Panasonic Corporation Photomask and method for forming pattern
JP4585197B2 (ja) * 2003-12-22 2010-11-24 ルネサスエレクトロニクス株式会社 レイアウト設計方法およびフォトマスク
JP4229829B2 (ja) 2003-12-26 2009-02-25 Ｎｅｃエレクトロニクス株式会社 ホールパターン設計方法、およびフォトマスク
US7384725B2 (en) * 2004-04-02 2008-06-10 Advanced Micro Devices, Inc. System and method for fabricating contact holes
KR100676599B1 (ko) * 2005-02-28 2007-01-30 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법
US20060257790A1 (en) * 2005-05-16 2006-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. A semiconductor device structure and methods of manufacturing thereof
JP4499616B2 (ja) * 2005-05-31 2010-07-07 富士通マイクロエレクトロニクス株式会社 露光用マスクとその製造方法、及び半導体装置の製造方法
US7749662B2 (en) * 2005-10-07 2010-07-06 Globalfoundries Inc. Process margin using discrete assist features
JP2007123333A (ja) * 2005-10-25 2007-05-17 Canon Inc 露光方法
JP2007140212A (ja) * 2005-11-18 2007-06-07 Toshiba Corp フォトマスク及び半導体装置の製造方法
JP5103901B2 (ja) 2006-01-27 2012-12-19 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4352068B2 (ja) * 2006-09-08 2009-10-28 株式会社東芝 露光方法及び半導体装置の製造方法
JP4814044B2 (ja) * 2006-10-05 2011-11-09 ルネサスエレクトロニクス株式会社 パターン設計方法
KR100864169B1 (ko) * 2007-05-10 2008-10-16 동부일렉트로닉스 주식회사 마스크의 설계방법과 반도체 소자
US8137898B2 (en) * 2007-07-23 2012-03-20 Renesas Electronics Corporation Method for manufacturing semiconductor device
US20090258302A1 (en) * 2008-04-10 2009-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Sub-resolution assist feature of a photomask
JP5537205B2 (ja) * 2009-08-31 2014-07-02 株式会社東芝 半導体装置及びその製造方法
KR20130081528A (ko) * 2012-01-09 2013-07-17 삼성디스플레이 주식회사 증착 마스크 및 이를 이용한 증착 설비
KR20150019695A (ko) * 2013-08-14 2015-02-25 삼성디스플레이 주식회사 단위 마스크 및 마스크 조립체
KR102417183B1 (ko) * 2016-02-25 2022-07-05 삼성전자주식회사 적층형 메모리 장치, ｏｐｃ 검증 방법, 적층형 메모리 장치의 레이아웃 디자인 방법, 및 적층형 메모리 장치의 제조 방법
CN110707044B (zh) * 2018-09-27 2022-03-29 联华电子股份有限公司 形成半导体装置布局的方法
US11817485B2 (en) * 2020-06-23 2023-11-14 Taiwan Semiconductor Manufacturing Company Limited Self-aligned active regions and passivation layer and methods of making the same
US11874595B2 (en) * 2020-08-27 2024-01-16 Micron Technology, Inc. Reticle constructions and photo-processing methods

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JPS5630129A (en) 1979-08-21 1981-03-26 Agency Of Ind Science & Technol Manufacture of photomask
JPS5922050A (ja) 1982-07-28 1984-02-04 Victor Co Of Japan Ltd ホトマスク
JP2988417B2 (ja) * 1997-02-28 1999-12-13 日本電気株式会社 フォトマスク
JP3119217B2 (ja) * 1997-10-31 2000-12-18 日本電気株式会社 フォトマスクおよびフォトマスクを使用した露光方法
WO1999047981A1 (en) * 1998-03-17 1999-09-23 Asml Masktools Netherlands B.V. METHOD OF PATTERNING SUB-0.25μ LINE FEATURES WITH HIGH TRANSMISSION, 'ATTENUATED' PHASE SHIFT MASKS
US6335130B1 (en) * 2000-05-01 2002-01-01 Asml Masktools Netherlands B.V. System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features

Also Published As

Publication number Publication date
TWI232511B (en) 2005-05-11
KR20020029612A (ko) 2002-04-19
JP3768794B2 (ja) 2006-04-19
US20020045134A1 (en) 2002-04-18
US6686108B2 (en) 2004-02-03
KR100831445B1 (ko) 2008-05-21
US20040142283A1 (en) 2004-07-22
JP2002122976A (ja) 2002-04-26
TW200409219A (en) 2004-06-01
US6893801B2 (en) 2005-05-17

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