JP3768794B2 - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法 Download PDF

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Publication number
JP3768794B2
JP3768794B2 JP2000313513A JP2000313513A JP3768794B2 JP 3768794 B2 JP3768794 B2 JP 3768794B2 JP 2000313513 A JP2000313513 A JP 2000313513A JP 2000313513 A JP2000313513 A JP 2000313513A JP 3768794 B2 JP3768794 B2 JP 3768794B2
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JP
Japan
Prior art keywords
integrated circuit
pattern
circuit device
openings
semiconductor integrated
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Expired - Fee Related
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JP2000313513A
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English (en)
Japanese (ja)
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JP2002122976A (ja
JP2002122976A5 (enExample
Inventor
修 井上
昇雄 長谷川
修二 池田
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000313513A priority Critical patent/JP3768794B2/ja
Priority to US09/964,341 priority patent/US6686108B2/en
Priority to TW093101467A priority patent/TWI248640B/zh
Priority to TW090124856A priority patent/TWI232511B/zh
Priority to KR1020010062319A priority patent/KR100831445B1/ko
Publication of JP2002122976A publication Critical patent/JP2002122976A/ja
Priority to US10/753,354 priority patent/US6893801B2/en
Publication of JP2002122976A5 publication Critical patent/JP2002122976A5/ja
Application granted granted Critical
Publication of JP3768794B2 publication Critical patent/JP3768794B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • H10P76/00—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2000313513A 2000-10-13 2000-10-13 半導体集積回路装置の製造方法 Expired - Fee Related JP3768794B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000313513A JP3768794B2 (ja) 2000-10-13 2000-10-13 半導体集積回路装置の製造方法
US09/964,341 US6686108B2 (en) 2000-10-13 2001-09-28 Fabrication method of semiconductor integrated circuit device
TW090124856A TWI232511B (en) 2000-10-13 2001-10-08 Fabrication method of semiconductor integrated circuit device
TW093101467A TWI248640B (en) 2000-10-13 2001-10-08 Manufacturing method of semiconductor integrated circuit device
KR1020010062319A KR100831445B1 (ko) 2000-10-13 2001-10-10 반도체 집적회로장치의 제조방법
US10/753,354 US6893801B2 (en) 2000-10-13 2004-01-09 Fabrication method of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000313513A JP3768794B2 (ja) 2000-10-13 2000-10-13 半導体集積回路装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002122976A JP2002122976A (ja) 2002-04-26
JP2002122976A5 JP2002122976A5 (enExample) 2005-02-03
JP3768794B2 true JP3768794B2 (ja) 2006-04-19

Family

ID=18792919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000313513A Expired - Fee Related JP3768794B2 (ja) 2000-10-13 2000-10-13 半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (2) US6686108B2 (enExample)
JP (1) JP3768794B2 (enExample)
KR (1) KR100831445B1 (enExample)
TW (2) TWI248640B (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3937903B2 (ja) * 2001-04-24 2007-06-27 キヤノン株式会社 露光方法及び装置
WO2002088843A2 (en) 2001-04-24 2002-11-07 Canon Kabushiki Kaisha Exposure method and apparatus
US7233887B2 (en) * 2002-01-18 2007-06-19 Smith Bruce W Method of photomask correction and its optimization using localized frequency analysis
JP2003287868A (ja) * 2002-03-27 2003-10-10 Nec Corp Ｏｐｃマスク並びにレーザリペア装置
US7107573B2 (en) * 2002-04-23 2006-09-12 Canon Kabushiki Kaisha Method for setting mask pattern and illumination condition
JP3984866B2 (ja) * 2002-06-05 2007-10-03 キヤノン株式会社 露光方法
JP4235404B2 (ja) * 2002-06-12 2009-03-11 キヤノン株式会社 マスクの製造方法
EP1450206B1 (en) * 2003-02-21 2016-04-20 Canon Kabushiki Kaisha Mask and its manufacturing method, exposure, and semiconductor device fabrication method
JP4886169B2 (ja) * 2003-02-21 2012-02-29 キヤノン株式会社 マスク及びその設計方法、露光方法、並びに、デバイス製造方法
EP1597631B1 (en) * 2003-02-27 2009-07-22 The University of Hong Kong Multiple exposure method for circuit performance improvement and maskset
JP2005003996A (ja) * 2003-06-12 2005-01-06 Toshiba Corp フォトマスクとフォトマスクの製造方法及びマスクデータ生成方法
JP4591809B2 (ja) * 2003-06-27 2010-12-01 エルピーダメモリ株式会社 微細化に対応したメモリアレイ領域のレイアウト方法
JP4684584B2 (ja) * 2003-07-23 2011-05-18 キヤノン株式会社 マスク及びその製造方法、並びに、露光方法
US6905899B2 (en) * 2003-09-23 2005-06-14 Macronix International Co., Ltd. Methods for forming a photoresist pattern using an anti-optical proximity effect
JP4599048B2 (ja) * 2003-10-02 2010-12-15 川崎マイクロエレクトロニクス株式会社 半導体集積回路のレイアウト構造、半導体集積回路のレイアウト方法、およびフォトマスク
US7582394B2 (en) * 2003-10-06 2009-09-01 Panasonic Corporation Photomask and method for forming pattern
JP4585197B2 (ja) * 2003-12-22 2010-11-24 ルネサスエレクトロニクス株式会社 レイアウト設計方法およびフォトマスク
JP4229829B2 (ja) 2003-12-26 2009-02-25 Ｎｅｃエレクトロニクス株式会社 ホールパターン設計方法、およびフォトマスク
US7384725B2 (en) * 2004-04-02 2008-06-10 Advanced Micro Devices, Inc. System and method for fabricating contact holes
KR100676599B1 (ko) * 2005-02-28 2007-01-30 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법
US20060257790A1 (en) * 2005-05-16 2006-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. A semiconductor device structure and methods of manufacturing thereof
JP4499616B2 (ja) * 2005-05-31 2010-07-07 富士通マイクロエレクトロニクス株式会社 露光用マスクとその製造方法、及び半導体装置の製造方法
US7749662B2 (en) * 2005-10-07 2010-07-06 Globalfoundries Inc. Process margin using discrete assist features
JP2007123333A (ja) * 2005-10-25 2007-05-17 Canon Inc 露光方法
JP2007140212A (ja) * 2005-11-18 2007-06-07 Toshiba Corp フォトマスク及び半導体装置の製造方法
JP5103901B2 (ja) 2006-01-27 2012-12-19 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4352068B2 (ja) * 2006-09-08 2009-10-28 株式会社東芝 露光方法及び半導体装置の製造方法
JP4814044B2 (ja) * 2006-10-05 2011-11-09 ルネサスエレクトロニクス株式会社 パターン設計方法
KR100864169B1 (ko) * 2007-05-10 2008-10-16 동부일렉트로닉스 주식회사 마스크의 설계방법과 반도체 소자
US8137898B2 (en) * 2007-07-23 2012-03-20 Renesas Electronics Corporation Method for manufacturing semiconductor device
US20090258302A1 (en) * 2008-04-10 2009-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Sub-resolution assist feature of a photomask
JP5537205B2 (ja) * 2009-08-31 2014-07-02 株式会社東芝 半導体装置及びその製造方法
KR20130081528A (ko) * 2012-01-09 2013-07-17 삼성디스플레이 주식회사 증착 마스크 및 이를 이용한 증착 설비
KR20150019695A (ko) * 2013-08-14 2015-02-25 삼성디스플레이 주식회사 단위 마스크 및 마스크 조립체
KR102417183B1 (ko) * 2016-02-25 2022-07-05 삼성전자주식회사 적층형 메모리 장치, ｏｐｃ 검증 방법, 적층형 메모리 장치의 레이아웃 디자인 방법, 및 적층형 메모리 장치의 제조 방법
CN110707044B (zh) * 2018-09-27 2022-03-29 联华电子股份有限公司 形成半导体装置布局的方法
US11817485B2 (en) * 2020-06-23 2023-11-14 Taiwan Semiconductor Manufacturing Company Limited Self-aligned active regions and passivation layer and methods of making the same
US11874595B2 (en) * 2020-08-27 2024-01-16 Micron Technology, Inc. Reticle constructions and photo-processing methods

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630129A (en) 1979-08-21 1981-03-26 Agency Of Ind Science & Technol Manufacture of photomask
JPS5922050A (ja) 1982-07-28 1984-02-04 Victor Co Of Japan Ltd ホトマスク
JP2988417B2 (ja) * 1997-02-28 1999-12-13 日本電気株式会社 フォトマスク
JP3119217B2 (ja) * 1997-10-31 2000-12-18 日本電気株式会社 フォトマスクおよびフォトマスクを使用した露光方法
WO1999047981A1 (en) * 1998-03-17 1999-09-23 Asml Masktools Netherlands B.V. METHOD OF PATTERNING SUB-0.25μ LINE FEATURES WITH HIGH TRANSMISSION, 'ATTENUATED' PHASE SHIFT MASKS
US6335130B1 (en) * 2000-05-01 2002-01-01 Asml Masktools Netherlands B.V. System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features

Also Published As

Publication number Publication date
TWI232511B (en) 2005-05-11
KR20020029612A (ko) 2002-04-19
TWI248640B (en) 2006-02-01
US20020045134A1 (en) 2002-04-18
US6686108B2 (en) 2004-02-03
KR100831445B1 (ko) 2008-05-21
US20040142283A1 (en) 2004-07-22
JP2002122976A (ja) 2002-04-26
TW200409219A (en) 2004-06-01
US6893801B2 (en) 2005-05-17

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