TWI240338B - Structure of image sensor module and method for manufacturing of wafer level package - Google Patents

Structure of image sensor module and method for manufacturing of wafer level package Download PDF

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Publication number
TWI240338B
TWI240338B TW093114471A TW93114471A TWI240338B TW I240338 B TWI240338 B TW I240338B TW 093114471 A TW093114471 A TW 093114471A TW 93114471 A TW93114471 A TW 93114471A TW I240338 B TWI240338 B TW I240338B
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layer
patent application
forming
wafer
item
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TW093114471A
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TW200536025A (en
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Wen-Kun Yang
Wen-Pin Yang
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Advanced Chip Eng Tech Inc
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1240338 五、發明說明（1) 奮 發明所屬之技術領域： 本發明係有關於影像感應器模組，特別是一種可以降低 價格、提高封裝結構之良率（y i e 1 d)與可靠度（ rel iabi 1 i ty)之影像感應器模組與晶圓級封裝之結構及其 形成方法。 先前技術： 半導體的技術已經發展的相當的迅速，特別地是半導體〇 晶粒（d i e s)有朝向小型化的趨勢。然而，對於半導體晶粒 (dies)之功能的需求相對的具有多樣化的趨勢。也就是 說，上述半導體晶粒（d i e s)在一個很小的區域中必須具有 更多的輸入/輸出墊（I / 0 pads)，因而使得引線（p i ns) 的密度也快速的提高了。這會導致上述半導體晶粒（d i e s) 的封裝變的越來越困難，並且良率也因此降低了。 上述封裝結構的主要目的在於保護上述晶粒免於受到外 在的4貝害。再者’由於上述晶粒所產生的熱必須有效率地透 過上述封裝結構來擴散以確保上述晶粒的運作。 早期的導線架封裝技術已經不適合引線（p i n s)密度過 . 高之更進步的半導體晶粒。因此，一新的球陣列（Ba 1 1 G r i d A r r ay ·· B G A)封裝技術已經被發展出來，其可以滿足
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五、發明說明（2) 上述更進步之半導體晶粒的封裝需求。上述球陣列封襄具有 一個好處，也就是它的球形引線（pi ns)具有比上述^ &架 封裝來得小之間距（p i t ch)，並且上述引線（ "" p 1 ns)不容易損害與變形。此外，較短的訊號傳遞距離可以 有益於提昇操作頻率以符合更快效率的需求。大部分的封芽 技術都疋先將一晶圓上的晶粒分離成為個別的晶粒，然後再 在封裝與測試上述個別的晶粒。另外一種稱為晶圓型態封穿 (wafer level package: WLP)之封裝技術可以在分離個別 的晶粒之前就封裝上述晶圓上之晶粒。上述晶圓型態封裝 (wafer level package: WLP)具有一些好處 ，例如：一個較短的生產週期（cy c 1 e t i me)、較低的價才夂 以及不需要填充物（under-fi 1 1)或鑄模（molding) ' ° 上述晶粒例如為影像感應器。目前，影像感應器模組是 利用C0B或LCC的方法來形成。其中，C0B方法的缺點之_係 為於製造期間會由於感測器區域上之粒子（pa r t i c 1 e)無法： 清洗而造成良率降低的情況產生。而LCC的方法由於材料的 因素使得它的封裝價格太高，並且封裝期間也會由於感測器 區域上之粒子（part i cl e)而造成良率降低的情況產生。此 外，She 1 1 Case (公司名稱）也開發了晶圓型態封裝（WafeF 1 e v e 1 p a c k a g e : W L P)技術’若以該公司之技術來製造影像 感應晶粒封裝時，一方面由於其需要二個玻璃板，其材料成 本偏高，另一方面由於其製程的複雜使得它的封裝價格高居
第7頁 1240338 五、發明說明（3) ^ 不下。而且由於其絕緣層的磨損（ wear out)導致透光度不佳，進一步也使得其可靠度（ reliability)降低。 因此，鑑於上述習知技術所提到的問題而提出本發明 ，而本發明之目的係在於提供一嶄新的影像感應器模組。 發明内容： 因此，鑑於上述習知技術所提到的問題而提出本發明 ，而本發明之目的係在於提供影像感應器模組與晶圓級封裝 之結構及其形成方法。 此外，本發明之目的在於提供影像感應器模組以利於晶 圓級封裝之最終測試（f i n a 1 t e s t i ng)。 再者，本發明之再一目的在於降低封裝結構之價格。 另外，本發明之又一目的在於提高封裝結構之良率（ yield)與可靠度（reliability)。除可以應用於半導體產 業，亦可應用於液晶顯示器產業。 如上所述，本發明之目的在於提供一種影像感應器模 組，該影像感應器模組包括：一絕緣基板；一晶圓級封裝
第8頁 1240338 五、發明說明（4) _ ，上述晶圓級封裝附著於上述絕緣基板之上，上述晶圓級封 裝具有一複數個影像感應晶粒與一複數個金屬焊接球；一鏡 架，上述鏡架置於上述影像感應晶粒之上，上述鏡架内置有 一複數個鏡片；以及，一軟板，上述鏡架置於該軟板之中， 並且上述軟板具有複數個銲點與上述複數個金屬焊接球作電 性耦合以利於傳輸上述複數個影像感應晶粒之功能。上述影 像感應晶粒可以與被動元件或其它具有並列結構或堆疊結構 之晶粒一起封裝。 本發明也提供一種晶圓級封裝結構。上述封裝結構包 括·一絕緣基板、第^一晶粒與第二晶粒、第一介電層、第二 介電層、接觸導電層、絕緣層與銲接球。上述第一晶粒與第 二晶粒附著到上述絕緣基板之上。上述第一介電層形成於上 述絕緣基板之上，其係在該絕緣基板之上之上述第一晶粒與 該第二晶粒之外填滿上述第一介電層。上述第二介電層形成 於上述第二晶粒之上。上述接觸導電層形成於上述第一晶粒 之第一金屬墊與第二晶粒之第二金屬墊之上以完全覆蓋住上 述第一與第二金屬墊，上述接觸導電層分別與上述第一金屬 墊、第二金屬墊作電性耦合。上述絕緣層形成於上述接觸導φ 電層之上，並且上述絕緣層具有開口形成於上述接觸導電層 之上。上述銲接球係利用鍛燒之方法而形成於上述開口之 上，上述銲接球分別與上述接觸導電層耦合。上述第一晶粒 之型悲可以選自DSP晶粒、主動晶粒、被動晶粒、支撑晶 粒、C P U晶粒或處理裔晶粒，而上述第二晶粒為互補式金乳
1240338 五、發明說明（5) 半導體影像感應晶粒。上述影像感應晶粒與DSP晶粒、主動 晶粒、被動晶粒、支撐晶粒 、C P U晶粒或處理裔晶粒係為並列結構之封裝。 本發明也提供一種晶圓級封裝結構。上述封裝結構包 括：一絕緣基板、第一晶粒與第二晶粒、第一介電層、第二 介電層、第三介電層、第一與第二接觸導電層、絕緣層與銲 接球。上述第一晶粒附著到上述絕緣基板之上。上述第一介 電層形成於上述絕緣基板之上，其係在上述絕緣基板之上之 第一晶粒之外填滿上述第一介電層。上述第一接觸導電層形〇 成於上述第一晶粒之第一金屬墊之上以完全覆蓋住上述第一 金屬墊，上述第一接觸導電層分別與上述第一金屬墊作電性 耦合。上述第二晶粒附著到上述第一晶粒之上。上述第二介 電層形成於上述第一介電層之上，其係在上述第二晶粒之外 填滿上述第二介電層，並且上述第二介電層具有介層洞形成 於該第一接觸導電層之上。上述第三介電層形成於上述第二 晶粒之上。上述第二接觸導電層填滿上述介層洞並形成於上 述第二晶粒之第二金屬墊之上以覆蓋住該第二金屬墊，上述 第二接觸導電層與上述第二金屬墊、第一接觸導電層作電性Φ 耦合。上述絕緣層形成於上述第二接觸導電層之上，並且上 述絕緣層具有開口形成於上述第二接觸導電層之上。上述銲 接球係利用鍛燒之方法而形成於上述開口之上，上述銲接球 分別與上述第二接觸導電層耦合。上述第一晶粒之型態可以 選自DSP晶粒、主動晶粒、被動晶粒、支撐晶粒、CPU晶粒或
第10頁 1240338 五、發明說明（6) 處理為晶粒 ;而上述第二晶粒為互補式金氧半導體影像感應器。上述影 像感應裔與D S P晶粒、主動晶粒、被動晶粒、支撐晶粒 、CPU晶粒或處理器晶粒係為堆疊結構之封裝。 本發明 法包括·’首 粒之金屬墊 (二氧化矽 ;然後，烘 層；接著， 粒；然後， 上；之後， 絕緣基板之 滿該材料層 電層於上述 墊之上之第 烤上述第二 口之上以分 光阻層於上 述第二光阻 上述接觸導 第二光阻圖 接觸導電層 又提供一種晶圓 先，形成 之上以覆 )於上述 烤上述水 切割上述 選取良好 烘烤上述 上，其係 ;然後， 第一材料 電層 層； 上述 二介 介電 別與 述第 層之 電層 案與 耦合 二介 一部 以形 第二 ;接 一第一 蓋住該 第一光 玻璃； 晶圓上 的晶粒 絕緣基 在該絕 烘烤上 層與金 之部分 之後， 金屬墊 電層與 分區域 成第二 開口之 著，去 級封裝結 光阻圖案 金屬墊； 阻圖案與 之後，去 之複數個 並附著該 板；接著 緣基板之 述材料層 屬墊之上 區域以形 形成一接 作電性耦 接觸導電 以形成一 開口；之 上，使得 除剩餘之 構之形成方法。 於一晶圓上之複 接著， 複數個 除剩餘 晶粒以 晶粒到 ，形成 上之複 ;之後 ;接著 成第一 觸導電 合；接 層之上 第二光 後，形 上述導 上述第 上述方 數個晶 形成一水玻璃 晶粒之上 之上述第 形成個別 一絕緣基 一材料層 數個 ，形 ，蝕 開口 層於 著， ;然 阻圖 成導 線層 二光 一光阻 的晶 板之 於上述 晶粒之間填 第二介 述金屬 成 刻上 ; 缺 1 /、、、 上述 形成 後， 案並 線層 分別 阻層 後，烘 第一開 一第二 去除上 且暴露 於上述 與上述 ;然
第11頁 1240338 五、發明說明（7) 後，形成一絕緣層於上述導線層與第二介電層之上；之後， 去除上述導線層上之絕緣層之一部分區域以形成第三開口； 接著，烘烤上述絕緣層；最後，鍛燒銲接球於上述第三開口 之上。 實施方法： 本發明之一些實施例將於此詳細地描述。本發明不受限 於上述實施例，也可以在一寬廣的涵蓋其他均等範圍之其它 實施例，並且本發明之範圍當以所述之專利範圍為準 然而，不同構成要素之元件並不依實際的尺寸來顯示 。一些相關元件的大小是擴大的，並且無意義的部分沒有晝 出來，這樣比較容易提供本發明之一更清楚的描述與理解。 本發明之晶粒可以與被動元件（例如：電容）或其它具 有並列結構或堆疊結構之晶粒一起封裝。除可以使用於半導 體產業，亦可使用於液晶顯示器設備來完成積體電路封裝。 如上所述，本發明之目的在於提供一種影像感應器模 組，如圖一所示。本發明之晶圓級封裝部分結構剖面以1 0 1 表示。上述影像感應器模組包括：一絕緣基板1 0 0、一晶圓 級封裝1 0 1、一鏡架1 0 2與一軟板1 0 3。上述絕緣基板1 0 0之材
第12頁 1240338 五、發明說明（8) 夤可以是玻璃、矽、陶磁或石英晶體材料等等，並且其具有 ，形或矩形的形狀。上述晶圓級封裝i 〇丨具有一複數個影像 感應晶粒1 〇4與其它具有並列結構之晶粒丨〇5 幻如數位 δίΐ 號處理晶粒（d i g i t a 1 s i g n a 1 p r 〇 c e s s ; D S P )須/主意的係為上述晶粒1 〇 5為選擇性的配置。上述影像感 應晶粒104可以為互補式金氧半導體影像感應晶粒。上述晶 粒105之型態可以選自Dsp晶粒、主動（active)晶粒 或1 :』PfaSS1Ve)日日，、支撐（suPP〇rt)晶粒、CPU晶粒 lOCiesso晶粒等等。上述影像感應晶粒與 用-具有良好熱傳導性之ut封/V，曰曰圓級封裝1 °1係利 附著材料106而附著上述影m烤_型態材料與/或熱烘烤型態 絕緣基板1〇〇之上。上述應晶粒104與晶粒105到上述 接球丨07,做為訊號傳導級封裝101具有一複數個金屬焊 錫球（sender balls) 制，上述金屬焊接球107例如為銲 一介電層10 8形成於上 基板1 0 0之上之上述影像感 述介電層108。上述介電層 Silicon rubber) 〇
述絕緣基板1 〇 〇之上，其係在絕緣 應晶粒1 〇 4與晶粒1 〇 5之外填滿上 1 〇 8之材質可以為矽膠（ 接觸導電層1 0 9形成於上 1 1 5與晶粒1 0 5之金屬塾1 1 6之 115與金屬塾116。也就是說， 述影像感應晶粒1 0 4之金屬墊 上’以完全覆蓋住上述金屬墊 上述接觸導電層1 0 9分別與上
1240338 五、發明說明（9) 述金屬塾11 5與金屬墊Π6作電性耦合。上述接觸導電層1〇9 之材負可以包括鎳（Ni)、銅（Cu)、金（Au)與其組合。 、、另外’ 一膜層1 1 0披覆於上述影像感應晶粒1 0 4之上。上 述膜層1 1 γ之材質為二氧化矽（Si 〇2)或稱水玻璃、或三氧 化1呂’其係用來作為保護膜（protection fi lm)之用，其 例如採用旋塗方式形成。控制上述膜層1丨〇厚度使其不會影 響影像感應晶粒1 0 4之運作，厚度約為2 〇微米（ 以）以内。上述膜層i i 〇上可包含一濾光層（f i i ter ing f i lm) 1 1 1例如是一紅外線濾光層（IR n丨ter)，其可以用〇 來做為濾光波之用。 么 一絕緣層1 1 2形成於上述接觸導電層1 〇 9之上，並且上述 …邑緣層1 1 2具有開口形成於上述接觸導電層1 〇 9之上。上述 % θ Π 2不得遮住影像感應器1 〇 4以利於感測影像。上述絕緣 曰11 2之材質可以包括環氧化物層、樹脂與其組合 上述鏡架1 0 2置於上述影像感應晶粒1 〇 4之上，並且镑加
1 〇 0^. m . 头兄木 置有一透鏡組包含鏡片U3、n4。上述鏡架1 攻身合4c 1 η 〇 &々、上 與 板1 0 3之中，利用上述軟板1 〇 3上之複數個電性結構j工下 上述銲錫球（solder bal Is) 10 7作電性耦合，以利於俏 卡說。因此，本發明之鏡架1 〇 2與軟板1 0 3之組合具有探針 (Probe card)之功能，其可以作為多晶片尺度封裝
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final testing) 請參閱第五 (M u 11 i - C S P )之最終測試 圖。 一 上斤it 本發明也提供一種晶圓級封裝結構，如圖二 所不。上述封裝結構包括··一絕緣基板2〇〇、影像感應晶粒 2 0 1與晶粒2 0 2、第一介電層2 〇 5、第二介電層2 〇 7、接觸導電 層Y06、絕緣層209與銲接球2 0 8。上述絕緣基板2〇〇之材質可 以是玻璃、矽、陶磁或晶體材料等等，並且其具有圓形或矩 形的形狀。上述影像感應晶粒2 〇丨與晶粒2 〇 2係以並列的方式 一起封裝。上述影像感應晶粒2 〇 1與晶粒2 〇 2係利用一具有良j 好熱傳導性之UV烘烤型態材料與/或熱烘烤型態附著材料2 〇 3 而附著到上述絕緣基板2 0 0之上。上述第一介電層2 〇 5形成於 上述絕緣基板2 0 0之上，其係在絕緣基板2 〇 〇之上之上述影像 感應晶粒2 0 1與晶粒2 0 2之外填滿上述第一介電層2 0 5。上述 第一介電層2 0 5之材質可以為石夕膠（Silicon rubber)。 上述第二介電層2 0 7形成於上述影像感應晶粒2 0 1之上 ，其覆蓋了上述影像感應晶粒2 0 1之感光區域。上述第二介 電層2 0 7之材質可以為二氧化矽（S i 0 2)，其係用來作為保 護模（protection film)之用。另外，一濾光層（ f i 11 e r i n g f i 1 m)可以形成於上述影像感應晶粒2 0 1之上之 上述第二介電層20 7之上。上述濾光層（filtering film) 例如是一紅外線濾光層（IR filtering layer)，其可以用 來濾波之用。
第15頁 1240338 五、發明說明（11) 上述接觸導電層2 0 6形成於上述影像感應晶粒2 0 1之金屬 墊210與晶粒2 0 2之金屬墊2 04之上，以完全覆蓋住上述金屬 墊2 1 0與金屬墊2 0 4。也就是說，上述接觸導電層2 〇 6分別與 上述金屬墊2 1 0與金屬墊2 0 4作電性輕合。上述接觸導電層 2 0 6之材質可以包括鎳（1^)、銅（（：11)、金（八1〇與其組 合。上述金屬墊210與金屬墊2 0 4例如為鋁墊（A1 pad)。上 述絕緣層2 0 9形成於上述接觸導電層2 0 6之上，並且上述絕緣 層2 0 9具有開口形成於上述接觸導電層2 0 6之上。上述絕緣層 2 0 9之材質可以包括環氧化物層（e ρ ο X y )、樹脂或s I N R (—種丨 Siloxanepolymer)或BCB。上述金屬銲接球 2 0 8係利用鍛燒 之方法而形成於上述開口之上，使得上述金屬銲接球2 0 8分 別與上述接觸導電層2 0 6耦合。上述金屬焊接球2 0 8例如為銲 錫球（so 1 der ba11s) 2 0 8。 上述晶粒2 0 2之型態可以選自DSP晶粒、主動（active) 曰”曰粒、被動（passive)晶粒、支撐（support)晶粒、CPU 晶粒或處理器（processor)晶粒；而上述影像感應晶粒20 1 可以為互補式金氧半導體影像感應晶粒。上述影像感應晶粒 2 0 1與晶粒2 0 2係為並列結構之封裝。 此外，本發明也提供另一種晶圓級封裝結構，如圖三所 示。其特徵係為晶片採用堆疊方式建構。上述封裝結構包 括··一絕緣基板3 0 0、影像感應晶粒3 0 1與晶粒3 0 2、第一介
第16頁 1240338 五、發明說明（12) 電層303、第二介電層304、第三介電層311、接觸導電層 3 0 5a、3 0 5b、絕緣層3 0 6與銲接球3 0 7。上述絕緣基板3 0 0之 材質可以是玻璃、矽、陶磁或石英晶體材料等等，並且其具 有圓形或矩形的形狀。上述影像感應晶粒3 〇丨與晶粒3 〇 2係以 堆疊的方式一起封裝。上述晶粒3 0 2係利用一具有良好熱傳 導性之UV烘烤型態材料與/或熱烘烤型態附著材料3丨〇a而附 著到上述絕緣基板3 0 0之上。上述第一介電層3〇 3形成於上述 絕緣基板3 0 0之上，其係在上述絕緣基板3 〇 〇之上之上述晶粒 30 2之外填滿上述第一介電層303。上述第一介電層3〇 3之材 貝可以為碎膠（Silicon rubber)。 伞 上述接觸導電層305 a形成於上述晶粒3 〇 2之金屬墊3 0 9之 上以完全覆蓋住上述金屬塾3 0 9，上述接觸導電層3 〇 5a分別 與上述金屬墊3 0 9作電性麵合。上述影像感應晶粒3 〇丨係利用 一具有良好熱傳導性之UV烘烤型態材料與/或熱烘烤型態附 著材料31 Ob而附著到上述晶粒3 0 2之上。上述第二介電層3〇4 形成於上述第一介電層3 0 3之上，其係在上述影^ ^應^粒 301之外填滿上述第二介電層3 04,並且上述第二介電層3〇4 具有介層洞312形成於接觸導電層3 0 5a之上 " 。上述第二介電層304之材質可以為二氧化矽（Si〇2)。 曜 此外，第三介電層311形成於上述影像感應晶粒3〇1之 上’其覆蓋了上述影像感應晶粒301之感光區域。然而，上 述第三介電層3 11不會影響影像感應晶粒3〇丨之之運作。上述
1240338 五、發明說明（13) 第三介電層31 1之材質可以為二氧化矽（Si02)，其係用來 作為保護模（protection film)之用。另外，一濾光層 (f i 1 tering f i lm)可以形成於上述影像感應晶粒3〇1之上 之上述第三介電層311之上。上述濾光層（ filtering film)例如是一紅外線濾光層（filtering 1 ayer)，其可以用來濾波之用。 上述接觸導電層305 b填滿上述介層洞3 1 2並形成於上述 影像感應晶粒3 0 1之金屬墊3 0 8之上以完全覆蓋住該金屬墊 308。也就是說，上述接觸導電層305 b與上述金屬墊308 〇 、接觸導電層305 a作電性耦合。上述接觸導電層3〇5a、3〇5b 之材質可以包括鎳（Ni)、銅（Cu)、金（Au)與其組合。 上述金屬塾308與金屬墊30 9例如為鋁墊（A1 pad)。上述絕 緣層306形成於上述接觸導電層30 5b之上，並且上述絕緣層 3 0 6具有開口 （未圖示）形成於上述接觸導電層3〇5b之上。 上述絕緣層30 6之材質可以包括環氧化物層、樹脂與其組 合0
上述金屬銲接球3 0 7係利用焊接之方法而形成於上述開 口之上’上述金屬銲接球307分別與上述接觸導電層3〇5 b耦合。上述金屬谭接球30 7例如為銲妈球（ 307。 上述晶粒3 0 2之型態可以選自DSP晶教 主動(active)
第18頁 1240338 五、發明說明（14) 晶粒、被動（passive)晶粒、支撐（support)晶粒、CPU 晶粒或處理器（p r 〇 c e s s 〇 r)晶粒；而上述影像感應晶粒3 0 1 可以為互補式金氧半導體影像感應晶粒。上述影像感應晶粒 3 0 1與晶粒3 0 2係為堆疊結構之封裝。 圖四A〜四J為根據本發明之一晶圓級封裝結構之形成方 法示意圖。 再者，本發明又提供一種晶圓級封裝結構之形成方法 。上述方法包括：首先，形成一第一光阻圖案40 2於一晶圓< 上之晶粒4 0 0之金屬墊4 0 1之上以完全覆蓋住該金屬墊4 0 1， 請參考第四A圖。接著，形成一第一介電層於上述第一光阻 圖案4 0 2間與晶粒4 0 0之上。然後，烘烤上述第一介電層。之 後，去除剩餘之上述第一光阻層40 2以形成介電層403。上述 介電層4 0 3之材質為二氧化矽（S i 0 2)，其係用來作為保護 膜（protection film)之用。例如採用旋塗方式形成之氧 化層或稱水玻璃。接著，沿著切割線4 0 4切割上述晶圓上之 複數個晶粒4 0 0以形成個別的晶粒，如第四B圖所示。另外， 一濾光層（filtering film)可以形成於上述介電層40 3之（ 上。上述濾光層（f i 11 e r i n g f i 1 m)例如是一紅外線濾光層 (I R f i 11 e r i n g 1 a y e r)，其可以用來濾波之用。請參照上 述之實施例。 上述去除剩餘之第一光阻層4 0 2步驟之後，可以再藉由
1111· 11 画釅|_| 11 11 III 圓_薩國画_ III 第19頁 1240338
背磨（back lapping)上述完成製造矽晶圓而 100〜30 0微米（micron)之上述完成製造之矽日日 子又< aa 完成製造之石夕晶圓厚度可以报容易地切割上述曰圓曰。迷之 粒4 0 0以成為個別的晶粒。如果不經過背磨（ 阳圓上之 back lapping)而上述之完成製造石夕晶圓 話，上述背磨（back lapping)步驟是可 晶粒4 0 0包括至少二種型態之晶粒。 不會彳艮難切割的 以被省略的。上述 然後，上述個別晶粒接著經過測試以從其中 良好晶粒40 0。然後，拿取上述標準良好的晶粒4〇 : _ 在一絕緣基板4 0 5之上，使得二個相鄰的晶粒之間具有一個 更寬廣或適度的距離’並且利用一具有良好熱傳導性之uv^ 烤型態材料與/或熱烘烤型態附著材料406附著上述晶粒4〇〇、 到上述絕緣基板4 0 5之上。之後，藉由UV光或熱能來烘烤上 述絕緣基板4 0 5，如第四C圖所示。上述附著材料4 〇 6係利用 塗佈方式形成在上述絕緣基板4 0 5之上，並且上述附著材料 4 0 6之厚度最好是在2 0〜6 0微米（m i c r ο η)之間。上述絕緣美 板4 0 5之材質可以是玻璃、矽、陶磁或晶體材料等等，並且1 其具有圓形或矩形的形狀。 上述晶粒4 0 0具有輸入/輸出（I / 0)墊4 0 1形成於上表 面。本發明之附著材料4 0 6最好是良好的熱傳導材料，這樣 才可以使得上述起因於晶粒4 0 0與絕緣基板4 0 5之間溫度差異 所產生的問題（例如應力）被避免。
第20頁 1240338 五、發明說明（16) 接著，形成一材料層4 0 7於上述絕緣基板4 〇 5之上，其係 在該絕緣基板4 0 5之上之晶粒4 0 0之間填滿上述材料層4 0 7。 旅且上述材料層40 7與晶粒4 0 0之表面在大約相同的高度，如 第四D圖所示。然後，藉由[JV或熱能烘烤上述材料層4 0 7。上 述材料層4 0 7可以藉由一網印的方法或一微影的方法來形 成。上述材料層4 0 7可以用來作為一緩衝層以降低由於溫度 等所產生之應力。上述材料層40 7可以是一 U V與/或熱烘烤材 料’例如：矽膠、環氧化物層、樹脂、BCB等等。 之後’弟.一介電層（未圖示）可塗佈形成於上述^才 4〇 7與金屬墊401之上。上述第二介電層之材料可以是二氧/匕 矽。 接著，利用一光罩來去除上述金屬墊401之上之第二介 電層之部分區域以形成第一開口 4 0 8於上述金屬墊4 〇 1之上， 然後’藉由UV或熱能來烘烤上述介電層4 0 9，如第四e圖所 系。此外’選擇性地利用電漿蝕刻（r丨E)來清除上述金屬 蛰4 〇 1之表面以確保沒有殘留的材料留在上述金屬墊4 〇 ^之 上。 之後’形成一接觸導電層4 1 0於上述第一開口 4 0 8之上以 分別與上述金屬墊4 〇丨作電性耦合，如第四F圖所示。上述接 觸導電層410之較佳材料是鈦（η)、銅（Cu)或其組合'
第21頁 1240338 五、發明說明（17) 上述接觸導電層4 1 0可以藉由一物理方法、化學方法或其組 合之形成方式來形成，上述形成方法例如：化學氣相沉積、 物理氣相沉積、濺鍍與蒸鍍。 接著，形成一第二光阻層（未圖示）於上述介電層409 與接觸導電層4 1 0之上。然後，藉由利用一光罩之曝光顯影 去除上述第二光阻層之一部分區域以形成一第二光阻圖案 4 1 1並且暴露上述接觸導電層4 1 0以形成第二開口 4 1 2 ，如第四G圖所示。 之後，藉由蒸鍍方法，導線層4 1 3形成於上述第二開口 4 1 2之上，使得上述導線層4 1 3分別與上述接觸導電層耦合 4 1 0，如第四Η圖所示。上述導線層4 1 3之材料較佳的是鎳 (N i)、銅（Cu)、金（A u)與其組合。此稱為重新線路分 佈層（re-distribution layer; RDL)。 接著，去除剩餘之上述第二光阻層4 1 1。然後，形成一 絕緣層（未圖示）於上述導線層4 1 3與介電層4 0 9之上。之 後，去除上述導線層4 1 3上之絕緣層之一部分區域以形成絕 緣層4 1 4與第三開口 4 1 5於上述導線層4 1 3之上，如第四I圖所 示。上述絕緣層可以藉由旋轉塗佈或網印的方式來形成。 本發明可選擇性地形成一環氧化物層（未圖示）於上述 絕緣基板4 0 5之背表面之步驟。
第22頁 1240338 五、發明說明（18) 接著，烘烤上述絕緣層4 1 4。然後，銲錫球（s ο 1 d e r bal Is) 41 6形成於上述第三開口 41 5之上，如第四J圖所示 。上述銲錫球4 1 6可以藉由一網印的方法置放於上述第三開 口 4 1 5之上，並且藉由一紅外線回流（I R r e f 1 〇 w)的方法將 銲錫球4 1 6與上述導線層4 1 3之表面連接在一起。 最後，前面所述之封裝絕緣基板4 0 5沿著切割線4 1 7進行 切割以隔絕個別的封裝積體電路。 由此，根據本發明，上述之影像感應器模組與晶圓級封 裝結構可以降低上述封裝結構的價格，並且提高上述封裝結 構的良率。此外，本發明之封裝大小可以很容易地調整以適 合測試設備、封裝設備等等。 此外，本發明除可以使用於半導體產業設備於封裝上 ，亦可以使用於液晶顯示器面板設備來完成I C封裝上。請參 閱第六圖，其顯示依據上述本發明實施例之可藉以應用於液 晶顯示器面板產業示意圖。晶片尺度封裝（CSP) 6 01形成於玻 璃基板6 0 0之上。 本發明以較佳實施例說明如上，然其並非用以限定本發 明所主張之專利權利範圍。其專利保護範圍當視後附之申請 專利範圍及其等同領域而定。凡熟悉此領域之技藝者
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第24頁 1240338 圖式簡單說明 圖示簡單說明： 圖一為根據本發明之一影像感應器模組之示意圖。 圖二為根據本發明之一具有二個晶粒之並列結構封裝示 意圖 〇 圖三為根據本發明之一具有二個晶粒之堆疊結構封裝示 意圖 圖四A〜四J為根據本發明之一晶圓級封裝結構之形成方 法示意圖。 第五圖為本發明多晶片尺度封裝（Mult i-CSP)之最終測 試（final testing)示意圖。 第六圖為顯示依據本發明實施例可藉以應用於液晶顯示 器面板產業示意圖。 圖示符號對照表： 絕緣基板 1 0 0、2 0 0、3 0 0、4 0 5 晶圓級封裝1 0 1 鏡架1 02 軟板1 0 3 影像感應器1 0 4、2 (H、3 0 1 晶粒 1 0 5、2 0 2、3 0 2、4 0 0 附著材料 1 0 6、2 0 3、3 1 0、4 0 6 銲錫球（solder balls) 107、2 0 8、3 0 7、416
第25頁 1240338 圖式簡單說明 介電層 108、110、205、20 7、303、3 0 4、31 卜 403 409 接觸 渡光 絕緣 鏡片 金屬 電性 介層 第一 切割 材料 第一 第二 第二 導線 第三 玻璃 曰曰 片 導電層109、 層（f i 11er 層 112、 209 1 13、114 墊 115、 116 結構1 1 7 洞312 光阻圖案4 0 2 線 404、 417 層4 0 7 開口 40 8 光阻圖案4 1 1 開口 412 層413 開口 415 基板6 0 0 尺度封裝（CSP)601 206、 305a 111 306、 414 305b、 410 204、 210、 308、 309、 401
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Claims (1)

1240338 六、申請專利範圍 申請專利範圍： 1. 一種影像感應器模組，包括： 一絕緣基板； 一影像感應晶粒，附著於該絕緣基板之上，具有複數個 金屬焊接球； 一保護膜，配置於該影像感應晶粒之上； 一鏡架，該鏡架配置於該影像感應晶粒之上，該鏡架内 置有一複數個鏡片；以及 一軟板，該鏡架置於該軟板之中，並且該軟板具有複數 個導電機制與該複數個金屬焊接球作電性耦合以利訊號傳 遞0 璃 玻 水 第( 圍碎 範化 利氧 專二 請塗 申旋 如為 2 係 組 模 器 應 感 像 影 之 項 膜 護 保 該 中 其 呂 化 氧 三 或 3.如申請專利範圍第1項之影像感應器模組，其中該影像感 應器模組可包含第二晶粒與該影像感應晶粒構成並列結構或 堆疊結構。 4.如申請專利範圍第3項之影像感應器模組，其中該第二晶 粒之型悲可以選自D S P晶粒、主動晶粒、被動晶粒、支撐晶 粒、CPU晶粒或處理器晶粒。
第27頁 1240338 六、申請專利範圍 * 5. 如申請專利範圍第1項之影像感應器模組，其中該絕緣基 板之材質為玻璃、石夕、陶磁或石英晶體。 6. 如申請專利範圍第3項之影像感應器模組，更包含： 一形成於該絕緣基板之上之第一介電層，其係在該絕緣 基板之上之該影像感應晶粒與該第二晶粒間填滿該第一介電 層； 一形成於該第二晶粒之上之第二介電層； 第 層 一形成於該影像感應晶粒之第一金屬墊與該第二晶粒之 金屬墊之上以覆蓋住該第一與第二金屬墊之接觸導電 該接觸導電層分別與該第一金屬墊、該第二金屬墊作電 性耦合 有開口 於 層麵合 形成於該接觸導電層之上之絕緣層，並且該絕緣層具 形成於該接觸導電層之上；以及 該開口之上導電銲錫球，該銲接球分別與該接觸導電 # 7 ·如申請專利範圍第1項之影像感應器模組，其中該影像感 應晶粒為互補式金氧半導體影像感應晶粒。 8. 如申請專利範圍第1項之影像感應器模組，更包含一濾光 膜配置於該保護膜之上。 9. 如申請專利範圍第6項之影像感應器模組，其中該第一介
第28頁 1240338 六、申請專利範圍 _ 電層之材質為碎膠。 1 0 .如申請專利範圍第6項之影像感應器模組，其中該第二介 電層之材質為環氧化物（epoxy)、樹脂、SINR(—種Siloxane po1ymer)或 BCB。 1 1.如申請專利範圍第8項之影像感應器模組，其中該濾光膜 是一紅外線濾光層。 1 2.如申請專利範圍第6項之影像感應器模組，其中該接觸導〇 電層之材質包括鎳（Ni)、銅（Cu)、金（Au)與其組合。 1 3 .如申請專利範圍第6項之影像感應器模組，其中該絕緣層 之材質包括環氧化物層、樹脂、矽膠與其組合。 1 4.如申請專利範圍第3項之影像感應器模組，更包括： 一形成於該絕緣基板之上之第一介電層，其係在該絕緣 基板之上之該第二晶粒之外填滿該第一介電層； 一形成於該第二晶粒之第一金屬墊之上以完全覆蓋住該丨· 第一金屬墊之第一接觸導電層，該第一接觸導電層分別與該 第一金屬墊作電性耦合； 一堆疊附著到該第二晶粒之影像感應晶粒； 一形成於該第一介電層之上之第二介電層，其係在該影 像感應晶粒之外填滿該第二介電層，並且該第二介電層具有
第29頁 1240338 六、申請專利範圍 介層洞形成於該第一接觸導電層之上； 一形成於該影像感應晶粒之上之第三介電層； 一填滿該介層洞並形成於該影像感應晶粒之一第二金屬 墊之上以覆蓋住該第二金屬墊之第二接觸導電層，該第二接 觸導電層與該第二金屬墊、該第一接觸導電層作電性耦合； 一形成於該第二接觸導電層之上之絕緣層，並且該絕緣 層具有開口形成於該第二接觸導電層之上；以及 於該開口之上之銲接球，該銲接球分別與該第二接觸導電層 耦合。 1 5 ·如申請專利範圍第1 4項之影像感應器模組，其中該第一 介電層之材質為矽膠。 1 6 ·如申請專利範圍第1 4項之影像感應器模組，其中該第二 介電層之材質為聚乙醯（Polyimide: PI) 、BT、SINR(—種 Siloxane polymer)或環氧化物層（Epoxy)。 1 7 ·如申請專利範圍第1 4項之影像感應器模組，其中該第三 介電層之材質為PI或BT或SINR(Siloxane polymer)。 Au 1 8 .如申請專利範圍第1 4項之影像感應器模組，其中該第 與第二接觸導電層之材質包括鎳（Ni)、銅（Cu)、金 與其組合。
第30頁 1240338 六、申請專利範圍 1 9 .如申請專利範圍第1 4項之影像感應器模組，其中該絕緣 層之材質包括環氧化物層、樹脂與其組合。 2 0. —種晶圓級封裝結構之形成方法，包括： 形成一第一光阻圖案於一晶圓上之複數個晶粒之金屬墊 之上以覆蓋住該金屬墊； 形成一第一介電層於該第一光阻圖案與該複數個晶粒之 上； 烘烤該第一介電層； 去除該第一光阻層； 切割該晶圓上之該複數個晶粒以形成個別的晶粒； 選取良好的該晶粒並附著該晶粒到一絕緣基板之上； 烘烤該絕緣基板； 形成一材料層於該絕緣基板之上，其係在該絕緣基板之 上之該複數個晶粒之間填滿該材料層； 烘烤該材料層； 形成一第二介電層於該材料層與該金屬墊之上； 蝕刻該金屬墊之上之該第二介電層之部分區域以形成第 一開口於該金屬墊之上； 烘烤該第二介電層； 形成一接觸導電層於該第一開口之上以分別與該金屬墊 作電性耦合； 形成一第二光阻層於該第二介電層與該接觸導電層之 上；
第31頁 1240338 六、申請專利範圍 去除該第二光阻層之一部分區域以形成一第二光阻圖案 並且暴露該接觸導電層以形成第二開口； 形成導線層於該第二光阻圖案與該第二開口之上，使得 該導線層分別與該接觸導電層耦合； 去除剩餘之該第二光阻層； 形成一絕緣層於該導線層與該第二介電層之上； 去除該導線層上之該絕緣層之一部分區域以形成第三開 Π ； 烘烤該絕緣層；以及 焊接銲接球於該第三開口之上。 2 1.如申請專利範圍第2 0項之晶圓級封裝結構之形成方法 ，更包括一於焊接該銲接球步驟之後切割該絕緣基板以絕緣 該複數個晶粒之步驟。 2 2 .如申請專利範圍第2 0項之晶圓級封裝結構之形成方法 ，更包括一於該去除剩餘之該第一光阻層步驟之後背磨該晶 圓以得到一厚度約1 0 0〜3 0 0微米（micron)之該晶圓之步 驟。 2 3 .如申請專利範圍第2 0項之晶圓級封裝結構之形成方法 ，更包括一形成一環氧化物層於該絕緣基板之背表面之步
第32頁 1240338 六、申請專利範圍 2 4 .如申請專利範圍第2 0項之晶圓級封裝結構之形成方法 ，其中該複數個晶粒包括至少二種型態之晶粒。 2 5 .如申請專利範圍第2 0項之晶圓級封裝結構之形成方法 ，其中該第一介電層之材質是旋塗式二氧化矽。 2 6 .如申請專利範圍第2 0項之晶圓級封裝結構之形成方法 ，其中該絕緣基板之材質是玻璃、矽、陶磁或石英晶體。 2 7.如申請專利範圍第2 0項之晶圓級封裝結構之形成方法 ，其中該材料層之材質是矽膠、環氧化物層、樹脂、BCB 、聚乙醢（Polyimide: PI) 、 BT、 SINR。 2 8 .如申請專利範圍第2 0項之晶圓級封裝結構之形成方法 ，其中該第二介電層之材質是SINR、 BCB、PI。 2 9 .如申請專利範圍第2 0項之晶圓級封裝結構之形成方法 ，更包括形成一濾光層於該第一介電層之上，該濾光層例如 是一紅外線濾光層。 3 0 .如申請專利範圍第2 0項之晶圓級封裝結構之形成方法 ，其中該接觸導電層之材質包括鈦（Ti)、銅（Cu)與其組 合0
第33頁 1240338 六、申請專利範圍 3 1.如申請專利範圍第2 0項之晶圓級封裝绪構之形成方法 ，其中該絕緣層之材質包括環氧化物層、樹脂與其組合。 3 2 .如申請專利範圍第2 0項之晶圓級封裝結構之形成方法 ，其中該導線層之材質包括鎳（Ni)、銅（Cu)、金（Au) 與其組合。 3 3 .如申請專利範圍第2 0項之晶圓級封裝結構之形成方法 ，其中該鍛燒銲接球之步驟包括：藉由一網印的方法置放該 銲接球於該第三開口之上，並且藉由一紅外線回流（I R r e f 1 ow)的方法將該銲接球與該導線層之表面連接在一起 3 4. —種晶圓級封裝結構之形成方法，包括： 利用一第一光阻圖案形成一第一介電層於一晶圓上之複 數個晶粒之上； 切割該複數個晶粒以形成個別的晶粒； 選取良好的該晶粒並附著該晶粒到一絕緣基板之上； 形成一材料層於該絕緣基板之上，分佈於該複數個晶粒 之間； 形成一第二介電層於該材料層之上； 蝕刻該第二介電層之部分區域以形成第一開口用以曝露 該晶粒上之金屬墊； 形成一導電層於該第一開口之上以分別與該金屬墊作電
第34頁 1240338 六、申請專利範圍 性搞合， 形成一第二光阻圖案並暴露該接觸導電層以形成第二開 Π ； 形成導線層於該第二光阻圖案與該第二開口之上，使得 該導線層分別與該接觸導電層耦合； 去除該第二光阻圖案； 形成一絕緣層於該導線層與該第二介電層之上； 去除該導線層上之該絕緣層之一部分區域以形成第三開 口；以及 焊接銲接球於該第三開口之上。 3 5 .如申請專利範圍第3 4項之晶圓級封裝結構之形成方法 ，更包括一於焊接該銲接球步驟之後切割該絕緣基板以絕緣 該複數個晶粒之步驟。 3 6 .如申請專利範圍第3 4項之晶圓級封裝結構之形成方法 ，更包括一於該去除該第一光阻圖案步驟之後背磨該矽晶圓 以得到一厚度約1 0 0〜3 0 0微米（micron)之該石夕晶圓之步 驟。 3 7.如申請專利範圍第3 4項之晶圓級封裝結構之形成方法 ，更包括一形成一環氧化物層於該絕緣基板之背表面之步 驟。
第35頁 1240338 六、申請專利範圍 3 8 .如申請專利範圍第3 4項之晶圓級封裝結構之形成方法 ，其中該複數個晶粒包括至少二種型態之晶粒。 3 9 .如申請專利範圍第3 4項之晶圓級封裝結構之形成方法 ，其中該第一介電層之材質是旋塗式二氧化矽。 4 0 .如申請專利範圍第3 4項之晶圓級封裝結構之形成方法 ，其中該絕緣基板之材質是玻璃、矽、陶磁或石英晶體。 4 1.如申請專利範圍第3 4項之晶圓級封裝結構之形成方法 ，其中該材料層之材質是矽膠、環氧化物層、樹脂、BCB 、PI、 BT、 SINR〇 4 2 .如申請專利範圍第3 4項之晶圓級封裝結構之形成方法 ，其中該第二介電層之材質是SINR、BCB、PI。 4 3 .如申請專利範圍第3 4項之晶圓級封裝結構之形成方法 ，更包括形成一滤光層於該第一介電層之上，該濾光層例如 是一紅外線濾光層。 44.如申請專利範圍第34項之晶圓級封裝結構之形成方法 ，其中該接觸導電層之材質包括鈦（Ti)、銅（Cu)與其組 合0
第36頁 1240338 六、申請專利範圍 4 5 .如申請專利範圍第3 4項之晶圓級封裝結構之形成方法 ，其中該絕緣層之材質包括環氧化物層、樹脂與其組合。 4 6 .如申請專利範圍第3 4項之晶圓級封裝結構之形成方法 ，其中該導線層之材質包括鎳（Ni)、銅（Cu)、金（Au) 與其組合。 ❿
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