TWI225656B - Electrolytic capacitor and a fabrication method therefor - Google Patents
Electrolytic capacitor and a fabrication method therefor Download PDFInfo
- Publication number
- TWI225656B TWI225656B TW092118048A TW92118048A TWI225656B TW I225656 B TWI225656 B TW I225656B TW 092118048 A TW092118048 A TW 092118048A TW 92118048 A TW92118048 A TW 92118048A TW I225656 B TWI225656 B TW I225656B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- alloy
- niobium
- electrolytic capacitor
- dielectric layer
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 121
- 238000000034 method Methods 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000010955 niobium Substances 0.000 claims abstract description 58
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 46
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 39
- 239000000956 alloy Substances 0.000 claims abstract description 39
- 229910001257 Nb alloy Inorganic materials 0.000 claims abstract description 33
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 23
- 229910001080 W alloy Inorganic materials 0.000 claims abstract description 17
- 229910001069 Ti alloy Inorganic materials 0.000 claims abstract description 15
- 238000007743 anodising Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 29
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 21
- 239000007864 aqueous solution Substances 0.000 claims description 20
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- 229910052721 tungsten Inorganic materials 0.000 claims description 18
- 239000010937 tungsten Substances 0.000 claims description 18
- 239000011737 fluorine Substances 0.000 claims description 17
- 229910052731 fluorine Inorganic materials 0.000 claims description 17
- 238000002048 anodisation reaction Methods 0.000 claims description 14
- 239000011701 zinc Substances 0.000 claims description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 11
- 239000000654 additive Substances 0.000 claims description 11
- 230000000996 additive effect Effects 0.000 claims description 11
- 229910052725 zinc Inorganic materials 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- AOLPZAHRYHXPLR-UHFFFAOYSA-I pentafluoroniobium Chemical compound F[Nb](F)(F)(F)F AOLPZAHRYHXPLR-UHFFFAOYSA-I 0.000 claims description 9
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- 239000011812 mixed powder Substances 0.000 claims description 6
- 230000001154 acute effect Effects 0.000 claims description 5
- -1 fluoride ions Chemical class 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 4
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910000691 Re alloy Inorganic materials 0.000 claims 1
- 229910052776 Thorium Inorganic materials 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 1
- 229910000859 α-Fe Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 102
- 238000012360 testing method Methods 0.000 description 78
- 239000000843 powder Substances 0.000 description 43
- IUVCFHHAEHNCFT-INIZCTEOSA-N 2-[(1s)-1-[4-amino-3-(3-fluoro-4-propan-2-yloxyphenyl)pyrazolo[3,4-d]pyrimidin-1-yl]ethyl]-6-fluoro-3-(3-fluorophenyl)chromen-4-one Chemical compound C1=C(F)C(OC(C)C)=CC=C1C(C1=C(N)N=CN=C11)=NN1[C@@H](C)C1=C(C=2C=C(F)C=CC=2)C(=O)C2=CC(F)=CC=C2O1 IUVCFHHAEHNCFT-INIZCTEOSA-N 0.000 description 37
- 230000000052 comparative effect Effects 0.000 description 37
- 239000011888 foil Substances 0.000 description 23
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 14
- 239000007789 gas Substances 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910020015 Nb W Inorganic materials 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 101000932768 Conus catus Alpha-conotoxin CIC Proteins 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000001420 photoelectron spectroscopy Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 1
- 241000272525 Anas platyrhynchos Species 0.000 description 1
- 235000007516 Chrysanthemum Nutrition 0.000 description 1
- 244000189548 Chrysanthemum x morifolium Species 0.000 description 1
- 241000723346 Cinnamomum camphora Species 0.000 description 1
- 101000983970 Conus catus Alpha-conotoxin CIB Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229960000846 camphor Drugs 0.000 description 1
- 229930008380 camphor Natural products 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002821 niobium Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002217482 | 2002-07-26 | ||
| JP2003080792 | 2003-03-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200402745A TW200402745A (en) | 2004-02-16 |
| TWI225656B true TWI225656B (en) | 2004-12-21 |
Family
ID=30772259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092118048A TWI225656B (en) | 2002-07-26 | 2003-07-02 | Electrolytic capacitor and a fabrication method therefor |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6876083B2 (enExample) |
| JP (1) | JP4275187B2 (enExample) |
| CN (2) | CN100490035C (enExample) |
| TW (1) | TWI225656B (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7684171B2 (en) * | 2003-10-23 | 2010-03-23 | Medtronic, Inc. | Capacitors based on valve metal alloys for use in medical devices |
| JP4275044B2 (ja) * | 2004-02-04 | 2009-06-10 | 三洋電機株式会社 | 固体電解コンデンサおよびその製造方法 |
| JP4383228B2 (ja) * | 2004-03-31 | 2009-12-16 | 三洋電機株式会社 | 固体電解コンデンサ |
| JPWO2007013456A1 (ja) * | 2005-07-26 | 2009-02-05 | 昭和電工株式会社 | 固体電解コンデンサ素子及びそれを用いた固体電解コンデンサ |
| JP4882567B2 (ja) * | 2006-07-19 | 2012-02-22 | パナソニック株式会社 | 固体電解コンデンサの製造方法及び固体電解コンデンサ |
| WO2008090985A1 (ja) | 2007-01-26 | 2008-07-31 | Showa Denko K.K. | コンデンサ材料およびその製造方法、ならびにその材料を含むコンデンサ、配線板および電子機器 |
| US8040660B2 (en) * | 2007-07-18 | 2011-10-18 | Cabot Corporation | High voltage niobium oxides and capacitors containing same |
| JP5289123B2 (ja) * | 2009-03-23 | 2013-09-11 | 三洋電機株式会社 | 固体電解コンデンサ及びその製造方法 |
| US8298478B2 (en) * | 2009-04-24 | 2012-10-30 | Medtronic, Inc. | Method of preparing an electrode |
| US20100318140A1 (en) * | 2009-06-16 | 2010-12-16 | Medtronic, Inc. | Volumetric energy density electrodes |
| CN102021458B (zh) * | 2010-10-15 | 2012-05-30 | 北京航空航天大学 | 一种Nb-Ti-Si-Zn合金材料及其制备方法 |
| US9053860B2 (en) | 2010-12-24 | 2015-06-09 | Showa Denko K.K. | Tungsten powder, anode body for capacitors, and electrolytic capacitor |
| WO2013058018A1 (ja) | 2011-10-18 | 2013-04-25 | 昭和電工株式会社 | コンデンサの陽極体の製造方法 |
| CN103945964A (zh) | 2011-11-15 | 2014-07-23 | 昭和电工株式会社 | 钨细粉的制造方法 |
| JP5222438B1 (ja) | 2011-11-29 | 2013-06-26 | 昭和電工株式会社 | タングステン細粉の製造方法 |
| EP2797094A4 (en) * | 2011-12-19 | 2015-09-16 | Showa Denko Kk | TUNGSTEN CAPACITOR ANODE AND MANUFACTURING METHOD THEREFOR |
| JP5350564B1 (ja) | 2012-02-08 | 2013-11-27 | 昭和電工株式会社 | 固体電解コンデンサ |
| WO2013172453A1 (ja) | 2012-05-18 | 2013-11-21 | 昭和電工株式会社 | コンデンサ素子の製造方法 |
| JP5613861B2 (ja) | 2012-06-22 | 2014-10-29 | 昭和電工株式会社 | 固体電解コンデンサの陽極体 |
| CN104246933B (zh) | 2012-06-22 | 2017-11-10 | 昭和电工株式会社 | 电容器的阳极体 |
| US10032563B2 (en) | 2012-06-22 | 2018-07-24 | Showa Denko K.K. | Capacitor element |
| CN105283935B (zh) * | 2013-06-06 | 2018-06-08 | 昭和电工株式会社 | 固体电解电容器及其制造方法 |
| JP5671664B1 (ja) | 2013-06-17 | 2015-02-18 | 昭和電工株式会社 | 固体電解コンデンサおよびその陽極リード接続方法並びに固体電解コンデンサの製造方法 |
| US20160372268A1 (en) * | 2013-06-18 | 2016-12-22 | Showa Denko K.K. | Capacitor anode and production method for same |
| WO2015029631A1 (ja) * | 2013-08-30 | 2015-03-05 | 昭和電工株式会社 | タングステン粉及びコンデンサの陽極体 |
| CN106663543A (zh) * | 2014-09-11 | 2017-05-10 | 昭和电工株式会社 | 钨电容器元件及其制造方法 |
| WO2018088574A1 (ja) | 2016-11-14 | 2018-05-17 | 株式会社村田製作所 | 固体電解コンデンサ素子、固体電解コンデンサ及び固体電解コンデンサ素子の製造方法 |
| CN108831763B (zh) * | 2018-05-23 | 2020-01-21 | 湖南辰砾新材料有限公司 | 一种超级电容器电极材料及其制备方法 |
| WO2022064734A1 (ja) | 2020-09-25 | 2022-03-31 | パナソニックＩｐマネジメント株式会社 | 電解コンデンサおよびその製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3849124A (en) * | 1969-12-05 | 1974-11-19 | Norton Co | Capacitor powder |
| US3597664A (en) * | 1969-12-05 | 1971-08-03 | Norton Co | Niobium-zirconium-titanium capacitor electrode |
| US4633373A (en) * | 1984-12-14 | 1986-12-30 | United Chemi-Con, Inc. | Lithium/valve metal oxide/valve metal capacitor |
| US5034857A (en) * | 1989-10-06 | 1991-07-23 | Composite Materials Technology, Inc. | Porous electrolytic anode |
| JPH05121275A (ja) | 1991-10-28 | 1993-05-18 | Sumitomo Chem Co Ltd | チタン電解コンデンサの製造方法 |
| US5733661A (en) * | 1994-11-11 | 1998-03-31 | Mitsubishi Chemical Corporation | High-permittivity composite oxide film and uses thereof |
| JPH11312628A (ja) | 1998-04-30 | 1999-11-09 | Nec Corp | 固体電解コンデンサ及び製造方法 |
| US6525921B1 (en) * | 1999-11-12 | 2003-02-25 | Matsushita Electric Industrial Co., Ltd | Capacitor-mounted metal foil and a method for producing the same, and a circuit board and a method for producing the same |
| US6545858B1 (en) * | 1999-11-30 | 2003-04-08 | Showa Denko K.K. | Capacitor |
-
2003
- 2003-07-02 TW TW092118048A patent/TWI225656B/zh not_active IP Right Cessation
- 2003-07-03 US US10/611,969 patent/US6876083B2/en not_active Expired - Lifetime
- 2003-07-25 CN CNB031331890A patent/CN100490035C/zh not_active Expired - Fee Related
- 2003-07-25 CN CN200810149277.5A patent/CN101388290B/zh not_active Expired - Fee Related
-
2008
- 2008-07-04 JP JP2008176344A patent/JP4275187B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN100490035C (zh) | 2009-05-20 |
| CN1474422A (zh) | 2004-02-11 |
| JP4275187B2 (ja) | 2009-06-10 |
| CN101388290A (zh) | 2009-03-18 |
| HK1061304A1 (zh) | 2004-09-10 |
| JP2008235949A (ja) | 2008-10-02 |
| US20040016978A1 (en) | 2004-01-29 |
| TW200402745A (en) | 2004-02-16 |
| US6876083B2 (en) | 2005-04-05 |
| CN101388290B (zh) | 2014-08-20 |
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