TWD207532S - Pvd腔的沉積環 - Google Patents

Pvd腔的沉積環 Download PDF

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Publication number
TWD207532S
TWD207532S TW108303547F TW108303547F TWD207532S TW D207532 S TWD207532 S TW D207532S TW 108303547 F TW108303547 F TW 108303547F TW 108303547 F TW108303547 F TW 108303547F TW D207532 S TWD207532 S TW D207532S
Authority
TW
Taiwan
Prior art keywords
deposition ring
pvd chamber
design
cross
sectional
Prior art date
Application number
TW108303547F
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English (en)
Chinese (zh)
Inventor
大衛 鞏特爾
振雄 蔡
基倫古莫妮拉珊卓拉 沙芬戴亞
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TWD207532S publication Critical patent/TWD207532S/zh

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TW108303547F 2018-12-17 2019-06-17 Pvd腔的沉積環 TWD207532S (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29/673,685 2018-12-17
US29/673,685 USD888903S1 (en) 2018-12-17 2018-12-17 Deposition ring for physical vapor deposition chamber

Publications (1)

Publication Number Publication Date
TWD207532S true TWD207532S (zh) 2020-10-01

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TW108303547F TWD207532S (zh) 2018-12-17 2019-06-17 Pvd腔的沉積環
TW108303547D01F TWD209650S (zh) 2018-12-17 2019-06-17 Pvd腔的沉積環

Family Applications After (1)

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TW108303547D01F TWD209650S (zh) 2018-12-17 2019-06-17 Pvd腔的沉積環

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US (1) USD888903S1 (OSRAM)
JP (2) JP1669283S (OSRAM)
TW (2) TWD207532S (OSRAM)

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Also Published As

Publication number Publication date
USD888903S1 (en) 2020-06-30
JP1669226S (OSRAM) 2020-09-28
TWD209650S (zh) 2021-02-01
JP1669283S (OSRAM) 2020-09-28

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