TWD191630S - Reaction tube - Google Patents

Reaction tube

Info

Publication number
TWD191630S
TWD191630S TW106306924F TW106306924F TWD191630S TW D191630 S TWD191630 S TW D191630S TW 106306924 F TW106306924 F TW 106306924F TW 106306924 F TW106306924 F TW 106306924F TW D191630 S TWD191630 S TW D191630S
Authority
TW
Taiwan
Prior art keywords
reaction tube
item
transparent materials
design description
reaction
Prior art date
Application number
TW106306924F
Other languages
English (en)
Chinese (zh)
Inventor
佐藤明博
Original Assignee
日商日立國際電氣股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立國際電氣股份有限公司 filed Critical 日商日立國際電氣股份有限公司
Publication of TWD191630S publication Critical patent/TWD191630S/zh

Links

TW106306924F 2017-08-09 2017-11-27 Reaction tube TWD191630S (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-017179 2017-08-09
JPD2017-17179F JP1605460S (ja) 2017-08-09 2017-08-09

Publications (1)

Publication Number Publication Date
TWD191630S true TWD191630S (zh) 2018-07-11

Family

ID=62238986

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106306924F TWD191630S (zh) 2017-08-09 2017-11-27 Reaction tube

Country Status (3)

Country Link
US (1) USD842824S1 (ja)
JP (1) JP1605460S (ja)
TW (1) TWD191630S (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP1644260S (ja) * 2019-03-20 2019-10-28
USD931823S1 (en) 2020-01-29 2021-09-28 Kokusai Electric Corporation Reaction tube
TWD217227S (zh) 2020-01-30 2022-02-21 日商國際電氣股份有限公司 反應管
JP1678273S (ja) * 2020-03-10 2021-02-01 反応管
JP1731675S (ja) * 2022-05-30 2022-12-08
JP1731674S (ja) * 2022-05-30 2022-12-08
JP1731673S (ja) * 2022-05-30 2022-12-08
JP2024042227A (ja) * 2022-09-15 2024-03-28 株式会社Kokusai Electric 変換用配管、基板処理装置および半導体装置の製造方法

Family Cites Families (37)

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KR890008922A (ko) * 1987-11-21 1989-07-13 후세 노보루 열처리 장치
JP3024449B2 (ja) * 1993-07-24 2000-03-21 ヤマハ株式会社 縦型熱処理炉及び熱処理方法
JPH08264521A (ja) * 1995-03-20 1996-10-11 Kokusai Electric Co Ltd 半導体製造用反応炉
USD424024S (en) * 1997-01-31 2000-05-02 Tokyo Electron Limited Quartz process tube
USD417438S (en) * 1997-01-31 1999-12-07 Tokyo Electron Limited Quartz outer tube
USD405429S (en) * 1997-01-31 1999-02-09 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD423463S (en) * 1997-01-31 2000-04-25 Tokyo Electron Limited Quartz process tube
USD406113S (en) * 1997-01-31 1999-02-23 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
USD404368S (en) * 1997-08-20 1999-01-19 Tokyo Electron Limited Outer tube for use in a semiconductor wafer heat processing apparatus
USD405431S (en) * 1997-08-20 1999-02-09 Tokyo Electron Ltd. Tube for use in a semiconductor wafer heat processing apparatus
US5948300A (en) * 1997-09-12 1999-09-07 Kokusai Bti Corporation Process tube with in-situ gas preheating
JP2000243747A (ja) * 1999-02-18 2000-09-08 Kokusai Electric Co Ltd 基板処理装置
KR100360401B1 (ko) * 2000-03-17 2002-11-13 삼성전자 주식회사 슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치
JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
JP4523225B2 (ja) * 2002-09-24 2010-08-11 東京エレクトロン株式会社 熱処理装置
USD521464S1 (en) * 2003-11-04 2006-05-23 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
USD521465S1 (en) * 2003-11-04 2006-05-23 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
WO2007041254A2 (en) * 2005-10-03 2007-04-12 Tubemaster, Inc Device for loading chemical reactor tubes
JP5157100B2 (ja) * 2006-08-04 2013-03-06 東京エレクトロン株式会社 成膜装置及び成膜方法
USD600659S1 (en) * 2006-09-12 2009-09-22 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD586768S1 (en) * 2006-10-12 2009-02-17 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
JP5096182B2 (ja) * 2008-01-31 2012-12-12 東京エレクトロン株式会社 熱処理炉
USD611013S1 (en) * 2008-03-28 2010-03-02 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
JP4930438B2 (ja) * 2008-04-03 2012-05-16 東京エレクトロン株式会社 反応管及び熱処理装置
USD618638S1 (en) * 2008-05-09 2010-06-29 Hitachi Kokusai Electric, Inc. Reaction tube
USD610559S1 (en) * 2008-05-30 2010-02-23 Hitachi Kokusai Electric, Inc. Reaction tube
USD724551S1 (en) * 2011-11-18 2015-03-17 Tokyo Electron Limited Inner tube for process tube for manufacturing semiconductor wafers
TWD167987S (zh) * 2013-06-28 2015-05-21 日立國際電氣股份有限公司 反應管之部分
TWD168774S (zh) * 2013-06-28 2015-07-01 日立國際電氣股份有限公司 反應管之部分
TWD167986S (zh) * 2013-06-28 2015-05-21 日立國際電氣股份有限公司 反應管之部分
USD739832S1 (en) * 2013-06-28 2015-09-29 Hitachi Kokusai Electric Inc. Reaction tube
JP1534829S (ja) 2015-02-23 2015-10-13
JP1535455S (ja) * 2015-02-25 2015-10-19
JP1546512S (ja) * 2015-09-04 2016-03-22
JP1546345S (ja) * 2015-09-04 2016-03-22
JP1563524S (ja) * 2016-03-30 2016-11-21

Also Published As

Publication number Publication date
JP1605460S (ja) 2021-05-31
USD842824S1 (en) 2019-03-12

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