TW578304B - Multiple operating voltage vertical replacement-gate (VRG) transistor - Google Patents

Multiple operating voltage vertical replacement-gate (VRG) transistor Download PDF

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Publication number
TW578304B
TW578304B TW091119024A TW91119024A TW578304B TW 578304 B TW578304 B TW 578304B TW 091119024 A TW091119024 A TW 091119024A TW 91119024 A TW91119024 A TW 91119024A TW 578304 B TW578304 B TW 578304B
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TW
Taiwan
Prior art keywords
region
gate
source
doped
mosfet
Prior art date
Application number
TW091119024A
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English (en)
Chinese (zh)
Inventor
Paul Arthur Layman
John Russell Mcmacken
J Ross Thomson
Samir Chaudhry
Jack Qingsheng Zhao
Original Assignee
Agere Syst Guardian Corp
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Filing date
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Application granted granted Critical
Publication of TW578304B publication Critical patent/TW578304B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/016—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
TW091119024A 2001-09-21 2002-08-22 Multiple operating voltage vertical replacement-gate (VRG) transistor TW578304B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/961,477 US6686604B2 (en) 2001-09-21 2001-09-21 Multiple operating voltage vertical replacement-gate (VRG) transistor

Publications (1)

Publication Number Publication Date
TW578304B true TW578304B (en) 2004-03-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW091119024A TW578304B (en) 2001-09-21 2002-08-22 Multiple operating voltage vertical replacement-gate (VRG) transistor

Country Status (5)

Country Link
US (2) US6686604B2 (enExample)
JP (2) JP5179693B2 (enExample)
KR (1) KR100908991B1 (enExample)
GB (1) GB2382719B (enExample)
TW (1) TW578304B (enExample)

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TWI871773B (zh) * 2022-09-23 2025-02-01 美商蘋果公司 包括具有背側電力遞送的垂直電晶體之半導體設備

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TWI871773B (zh) * 2022-09-23 2025-02-01 美商蘋果公司 包括具有背側電力遞送的垂直電晶體之半導體設備
US12402293B2 (en) 2022-09-23 2025-08-26 Apple Inc. Stacked SRAM cell architecture
US12408317B2 (en) 2022-09-23 2025-09-02 Apple Inc. SRAM macro design architecture

Also Published As

Publication number Publication date
GB2382719A (en) 2003-06-04
US20030060015A1 (en) 2003-03-27
KR100908991B1 (ko) 2009-07-22
JP2003163282A (ja) 2003-06-06
GB2382719B (en) 2005-09-21
US6686604B2 (en) 2004-02-03
KR20030025889A (ko) 2003-03-29
GB0220206D0 (en) 2002-10-09
US20050048709A1 (en) 2005-03-03
JP2012178592A (ja) 2012-09-13
JP5179693B2 (ja) 2013-04-10
US7056783B2 (en) 2006-06-06

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