TW554437B - Adjustable dual frequency voltage dividing plasma reactor - Google Patents
Adjustable dual frequency voltage dividing plasma reactor Download PDFInfo
- Publication number
- TW554437B TW554437B TW091118616A TW91118616A TW554437B TW 554437 B TW554437 B TW 554437B TW 091118616 A TW091118616 A TW 091118616A TW 91118616 A TW91118616 A TW 91118616A TW 554437 B TW554437 B TW 554437B
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- 230000009977 dual effect Effects 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 87
- 230000008569 process Effects 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000012545 processing Methods 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 69
- 238000011049 filling Methods 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 claims description 13
- 230000002079 cooperative effect Effects 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 3
- 230000001965 increasing effect Effects 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000003628 erosive effect Effects 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 239000011253 protective coating Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012705 liquid precursor Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/931,324 US6706138B2 (en) | 2001-08-16 | 2001-08-16 | Adjustable dual frequency voltage dividing plasma reactor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW554437B true TW554437B (en) | 2003-09-21 |
Family
ID=25460600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091118616A TW554437B (en) | 2001-08-16 | 2002-08-16 | Adjustable dual frequency voltage dividing plasma reactor |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6706138B2 (enExample) |
| EP (1) | EP1417697A1 (enExample) |
| JP (1) | JP4460288B2 (enExample) |
| KR (1) | KR20040018561A (enExample) |
| CN (1) | CN1317731C (enExample) |
| MY (1) | MY132614A (enExample) |
| TW (1) | TW554437B (enExample) |
| WO (1) | WO2003017318A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8518211B2 (en) | 2002-12-20 | 2013-08-27 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
| TWI469693B (zh) * | 2006-12-29 | 2015-01-11 | Lam Res Corp | 用以處理電漿束縛之低電場設備 |
| TWI777968B (zh) * | 2016-08-13 | 2022-09-21 | 美商應用材料股份有限公司 | 具有可調式噴頭與可調式襯墊的處理腔室 |
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| JP4370789B2 (ja) * | 2002-07-12 | 2009-11-25 | 東京エレクトロン株式会社 | プラズマ処理装置及び可変インピーダンス手段の校正方法 |
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2001
- 2001-08-16 US US09/931,324 patent/US6706138B2/en not_active Expired - Lifetime
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- 2002-08-15 CN CNB028159810A patent/CN1317731C/zh not_active Expired - Fee Related
- 2002-08-15 JP JP2003522128A patent/JP4460288B2/ja not_active Expired - Fee Related
- 2002-08-15 EP EP02753475A patent/EP1417697A1/en not_active Withdrawn
- 2002-08-15 MY MYPI20023023A patent/MY132614A/en unknown
- 2002-08-15 WO PCT/US2002/026008 patent/WO2003017318A1/en not_active Ceased
- 2002-08-15 KR KR10-2004-7002243A patent/KR20040018561A/ko not_active Ceased
- 2002-08-16 TW TW091118616A patent/TW554437B/zh active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8518211B2 (en) | 2002-12-20 | 2013-08-27 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
| TWI469693B (zh) * | 2006-12-29 | 2015-01-11 | Lam Res Corp | 用以處理電漿束縛之低電場設備 |
| TWI777968B (zh) * | 2016-08-13 | 2022-09-21 | 美商應用材料股份有限公司 | 具有可調式噴頭與可調式襯墊的處理腔室 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040018561A (ko) | 2004-03-03 |
| US20030037881A1 (en) | 2003-02-27 |
| CN1317731C (zh) | 2007-05-23 |
| JP4460288B2 (ja) | 2010-05-12 |
| CN1543662A (zh) | 2004-11-03 |
| MY132614A (en) | 2007-10-31 |
| EP1417697A1 (en) | 2004-05-12 |
| US6706138B2 (en) | 2004-03-16 |
| JP2005500684A (ja) | 2005-01-06 |
| WO2003017318A1 (en) | 2003-02-27 |
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