TW548748B - Thin film crystal growth by laser annealing - Google Patents

Thin film crystal growth by laser annealing Download PDF

Info

Publication number
TW548748B
TW548748B TW090119837A TW90119837A TW548748B TW 548748 B TW548748 B TW 548748B TW 090119837 A TW090119837 A TW 090119837A TW 90119837 A TW90119837 A TW 90119837A TW 548748 B TW548748 B TW 548748B
Authority
TW
Taiwan
Prior art keywords
time
period
laser
laser beam
energy
Prior art date
Application number
TW090119837A
Other languages
English (en)
Chinese (zh)
Inventor
Costas P Grigoropoulos
Mutsuko Hatano
Ming-Hong Lee
Seung-Jae Moon
Original Assignee
Hitachi Ltd
Univ California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Univ California filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW548748B publication Critical patent/TW548748B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
TW090119837A 2000-08-10 2001-08-10 Thin film crystal growth by laser annealing TW548748B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/637,325 US6451631B1 (en) 2000-08-10 2000-08-10 Thin film crystal growth by laser annealing

Publications (1)

Publication Number Publication Date
TW548748B true TW548748B (en) 2003-08-21

Family

ID=24555457

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090119837A TW548748B (en) 2000-08-10 2001-08-10 Thin film crystal growth by laser annealing

Country Status (4)

Country Link
US (2) US6451631B1 (https=)
JP (1) JP2002110544A (https=)
KR (1) KR100844242B1 (https=)
TW (1) TW548748B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI650801B (zh) * 2014-01-24 2019-02-11 法商歐洲雷射系統與方案解決公司 用於形成多晶矽之方法

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
TW494444B (en) 1999-08-18 2002-07-11 Semiconductor Energy Lab Laser apparatus and laser annealing method
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
CN1404627A (zh) 2000-10-10 2003-03-19 纽约市哥伦比亚大学托管会 处理薄金属层的方法与设备
KR100672628B1 (ko) * 2000-12-29 2007-01-23 엘지.필립스 엘시디 주식회사 액티브 매트릭스 유기 전계발광 디스플레이 장치
JP4744700B2 (ja) * 2001-01-29 2011-08-10 株式会社日立製作所 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
US7009140B2 (en) * 2001-04-18 2006-03-07 Cymer, Inc. Laser thin film poly-silicon annealing optical system
US6645454B2 (en) * 2001-06-28 2003-11-11 Sharp Laboratories Of America, Inc. System and method for regulating lateral growth in laser irradiated silicon films
JP2003059858A (ja) * 2001-08-09 2003-02-28 Sony Corp レーザアニール装置及び薄膜トランジスタの製造方法
KR100885904B1 (ko) * 2001-08-10 2009-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 어닐링장치 및 반도체장치의 제작방법
EP1417695B1 (en) * 2001-08-11 2008-01-23 The University Court of the University of Dundee Field emission backplate
US6590409B1 (en) * 2001-12-13 2003-07-08 Lsi Logic Corporation Systems and methods for package defect detection
KR100514179B1 (ko) * 2002-11-19 2005-09-13 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 사용하는 유기 전계 발광 소자
US8288239B2 (en) * 2002-09-30 2012-10-16 Applied Materials, Inc. Thermal flux annealing influence of buried species
KR100493156B1 (ko) * 2002-06-05 2005-06-03 삼성전자주식회사 나노입자를 이용한 비정질 실리콘의 결정화 방법
TWI378307B (en) 2002-08-19 2012-12-01 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
US7718517B2 (en) 2002-08-19 2010-05-18 Im James S Single-shot semiconductor processing system and method having various irradiation patterns
TW200414280A (en) * 2002-09-25 2004-08-01 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device, annealing method, annealing apparatus and display apparatus
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US7332431B2 (en) * 2002-10-17 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR100501700B1 (ko) 2002-12-16 2005-07-18 삼성에스디아이 주식회사 엘디디/오프셋 구조를 구비하고 있는 박막 트랜지스터
JP2004207616A (ja) * 2002-12-26 2004-07-22 Hitachi Displays Ltd 表示装置
JP5164378B2 (ja) 2003-02-19 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス
EP1468774B1 (en) * 2003-02-28 2009-04-15 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
JP2004266022A (ja) * 2003-02-28 2004-09-24 Sharp Corp 半導体薄膜の結晶成長装置および結晶成長方法
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6939754B2 (en) * 2003-08-13 2005-09-06 Sharp Laboratories Of America, Inc. Isotropic polycrystalline silicon and method for producing same
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
WO2005029549A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US7364952B2 (en) 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
KR100971951B1 (ko) * 2003-09-17 2010-07-23 엘지디스플레이 주식회사 엑시머 레이저를 이용한 비정질 실리콘 박막 결정화 방법
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
JP4413569B2 (ja) * 2003-09-25 2010-02-10 株式会社 日立ディスプレイズ 表示パネルの製造方法及び表示パネル
US7018468B2 (en) * 2003-11-13 2006-03-28 Sharp Laboratories Of America, Inc. Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing
US7858450B2 (en) * 2004-01-06 2010-12-28 Samsung Electronics Co., Ltd. Optic mask and manufacturing method of thin film transistor array panel using the same
KR101041066B1 (ko) * 2004-02-13 2011-06-13 삼성전자주식회사 실리콘 결정화 방법, 이를 이용한 실리콘 결정화 장치,이를 이용한 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 이용한 표시장치
KR100603330B1 (ko) * 2004-02-16 2006-07-20 삼성에스디아이 주식회사 레이저 결정화 장치
TWI304897B (en) * 2004-11-15 2009-01-01 Au Optronics Corp Method of manufacturing a polysilicon layer and a mask used thereof
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US7674149B2 (en) * 2005-04-21 2010-03-09 Industrial Technology Research Institute Method for fabricating field emitters by using laser-induced re-crystallization
CN101617069B (zh) * 2005-12-05 2012-05-23 纽约市哥伦比亚大学理事会 处理膜的系统和方法以及薄膜
US8846551B2 (en) 2005-12-21 2014-09-30 University Of Virginia Patent Foundation Systems and methods of laser texturing of material surfaces and their applications
US8753990B2 (en) * 2005-12-21 2014-06-17 University Of Virginia Patent Foundation Systems and methods of laser texturing and crystallization of material surfaces
KR100740124B1 (ko) * 2006-10-13 2007-07-16 삼성에스디아이 주식회사 다결정 실리콘 박막 트랜지스터 및 그 제조방법
US20100143744A1 (en) * 2007-03-09 2010-06-10 University Of Virginia Patent Foundation Systems and Methods of Laser Texturing of Material Surfaces and their Applications
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
GB0722120D0 (en) * 2007-11-10 2007-12-19 Quantum Filament Technologies Improved field emission backplate
CN101919058B (zh) 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8334194B2 (en) * 2008-02-06 2012-12-18 Motech Americas, Llc Methods and apparatus for manufacturing semiconductor wafers
US8569155B2 (en) 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
US20100102323A1 (en) * 2008-10-24 2010-04-29 Sposili Robert S Directionally Annealed Silicon Film Having a (100)-Normal Crystallographical Orientation
US8802580B2 (en) 2008-11-14 2014-08-12 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
US8247317B2 (en) * 2009-09-16 2012-08-21 Applied Materials, Inc. Methods of solid phase recrystallization of thin film using pulse train annealing method
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
TWI459444B (zh) 2009-11-30 2014-11-01 應用材料股份有限公司 在半導體應用上的結晶處理
US20120074117A1 (en) * 2010-09-23 2012-03-29 Varian Semiconductor Equipment Associates, Inc. In-situ heating and co-annealing for laser annealed junction formation
JP5891504B2 (ja) * 2011-03-08 2016-03-23 株式会社Ｊｏｌｅｄ 薄膜トランジスタアレイ装置の製造方法
US10131086B2 (en) 2011-06-30 2018-11-20 University Of Virginia Patent Foundation Micro-structure and nano-structure replication methods and article of manufacture
TWI624862B (zh) * 2012-06-11 2018-05-21 應用材料股份有限公司 在脈衝式雷射退火中使用紅外線干涉技術之熔化深度測定
US10226837B2 (en) 2013-03-15 2019-03-12 Nlight, Inc. Thermal processing with line beams
US9413137B2 (en) 2013-03-15 2016-08-09 Nlight, Inc. Pulsed line beam device processing systems using laser diodes
CN104282539A (zh) * 2013-07-04 2015-01-14 上海和辉光电有限公司 一种多晶硅制作方法
DE102013224693A1 (de) * 2013-12-02 2015-06-03 Eos Gmbh Electro Optical Systems Verfahren zur beschleunigten Herstellung von Objekten mittels generativer Fertigung
TW201528379A (zh) * 2013-12-20 2015-07-16 應用材料股份有限公司 雙波長退火方法與設備
WO2015127031A1 (en) * 2014-02-19 2015-08-27 The Trustees Of Columbia University In The City Of New York Sequential laser firing for thin film processing
US9106887B1 (en) * 2014-03-13 2015-08-11 Wowza Media Systems, LLC Adjusting encoding parameters at a mobile device based on a change in available network bandwidth
KR102235601B1 (ko) 2014-05-29 2021-04-05 삼성디스플레이 주식회사 박막트랜지스터의 활성층 결정화 장치 및 그것을 이용한 결정화 방법
JP6471379B2 (ja) * 2014-11-25 2019-02-20 株式会社ブイ・テクノロジー 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置
US10466494B2 (en) 2015-12-18 2019-11-05 Nlight, Inc. Reverse interleaving for laser line generators
GB201614342D0 (en) * 2016-08-22 2016-10-05 M-Solv Ltd An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960001706B1 (ko) * 1993-05-27 1996-02-03 삼성전자주식회사 다결정 실리콘의 제조방법 및 장치
JP3388042B2 (ja) * 1994-11-18 2003-03-17 三菱電機株式会社 レーザアニーリング方法
JPH08186268A (ja) * 1994-12-28 1996-07-16 Sony Corp 薄膜半導体装置の製造方法
JPH09213651A (ja) * 1996-02-06 1997-08-15 Sharp Corp 半導体薄膜の製造装置および半導体薄膜の製造方法
CA2256699C (en) * 1996-05-28 2003-02-25 The Trustees Of Columbia University In The City Of New York Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
KR100234895B1 (ko) * 1997-05-12 1999-12-15 구본준 비정질 실리콘의 결정화 방법
JP3586558B2 (ja) * 1998-04-17 2004-11-10 日本電気株式会社 薄膜の改質方法及びその実施に使用する装置
KR100327087B1 (ko) * 1999-06-28 2002-03-13 구본준, 론 위라하디락사 레이저 어닐링 방법
JP2001044120A (ja) * 1999-08-04 2001-02-16 Mitsubishi Electric Corp レーザ熱処理方法およびレーザ熱処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI650801B (zh) * 2014-01-24 2019-02-11 法商歐洲雷射系統與方案解決公司 用於形成多晶矽之方法

Also Published As

Publication number Publication date
US6451631B1 (en) 2002-09-17
US20030003636A1 (en) 2003-01-02
KR100844242B1 (ko) 2008-07-07
JP2002110544A (ja) 2002-04-12
KR20020014704A (ko) 2002-02-25
US6635932B2 (en) 2003-10-21

Similar Documents

Publication Publication Date Title
TW548748B (en) Thin film crystal growth by laser annealing
JP5789011B2 (ja) 薄膜の直線走査連続横方向凝固
CN101617069B (zh) 处理膜的系统和方法以及薄膜
US6756614B2 (en) Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
US20050252894A1 (en) Laser annealing device and method for producing thin-film transistor
TWI575571B (zh) 部分熔融膜之非週期性脈衝處理系統及方法
TWI462181B (zh) 大面積薄膜之閃光燈退火結晶
KR20110094022A (ko) 박막 결정화를 위한 시스템 및 방법
CN104956466A (zh) 用于低温多晶硅结晶的短脉冲光纤激光器
JP2006005148A (ja) 半導体薄膜の製造方法および製造装置
TW200846512A (en) Crystallization device and crystallization method
US20040087116A1 (en) Semiconductor devices and methods of manufacture thereof
JP2004207691A (ja) 半導体薄膜の製造方法、その製造方法により得られる半導体薄膜、その半導体薄膜を用いる半導体素子および半導体薄膜の製造装置
JP4024657B2 (ja) 結晶の周期性構造の形成方法及びその装置
KR100674061B1 (ko) 반도체 소자 및 제조 방법
JP2002057105A (ja) 半導体薄膜製造方法、半導体薄膜製造装置、およびマトリクス回路駆動装置
JPH09162121A (ja) 半導体装置の製造方法
WO2006075569A1 (ja) 半導体薄膜の製造方法および半導体薄膜の製造装置
JP2006086447A (ja) 半導体薄膜の製造方法および半導体薄膜の製造装置
JP2000277454A (ja) 半導体製造装置
JPH08293466A (ja) 半導体薄膜の製造方法
JP2009032814A (ja) レーザ光照射装置および結晶成長方法
JP2007208044A (ja) 半導体薄膜の製造方法および半導体薄膜の製造装置
JP2007242803A (ja) 半導体薄膜の製造方法および半導体薄膜の製造装置

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent