JP2002110544A - レーザアニールによる薄膜結晶成長 - Google Patents

レーザアニールによる薄膜結晶成長

Info

Publication number
JP2002110544A
JP2002110544A JP2001241661A JP2001241661A JP2002110544A JP 2002110544 A JP2002110544 A JP 2002110544A JP 2001241661 A JP2001241661 A JP 2001241661A JP 2001241661 A JP2001241661 A JP 2001241661A JP 2002110544 A JP2002110544 A JP 2002110544A
Authority
JP
Japan
Prior art keywords
time
energy
energy beam
laser
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001241661A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002110544A5 (https=
Inventor
P Grigoropoulos Costas
ピー、グリゴロポウロス コスタス
Mutsuko Hatano
睦子 波多野
Lee Min-Hon
− ホン リー ミン
Jae Muun Seun
− ジャエ ムーン セウン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
University of California
University of California Berkeley
Original Assignee
Hitachi Ltd
University of California
University of California Berkeley
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, University of California, University of California Berkeley filed Critical Hitachi Ltd
Publication of JP2002110544A publication Critical patent/JP2002110544A/ja
Publication of JP2002110544A5 publication Critical patent/JP2002110544A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2001241661A 2000-08-10 2001-08-09 レーザアニールによる薄膜結晶成長 Pending JP2002110544A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US637325 1991-01-03
US09/637,325 US6451631B1 (en) 2000-08-10 2000-08-10 Thin film crystal growth by laser annealing

Publications (2)

Publication Number Publication Date
JP2002110544A true JP2002110544A (ja) 2002-04-12
JP2002110544A5 JP2002110544A5 (https=) 2008-03-06

Family

ID=24555457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001241661A Pending JP2002110544A (ja) 2000-08-10 2001-08-09 レーザアニールによる薄膜結晶成長

Country Status (4)

Country Link
US (2) US6451631B1 (https=)
JP (1) JP2002110544A (https=)
KR (1) KR100844242B1 (https=)
TW (1) TW548748B (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003015117A1 (en) * 2001-08-11 2003-02-20 The University Court Of The University Of Dundee Field emission backplate
JP2004172569A (ja) * 2002-11-19 2004-06-17 Samsung Sdi Co Ltd 均一性に優れた薄膜トランジスタ及びこれを用いる有機電界発光素子
JP2012064954A (ja) * 2004-01-06 2012-03-29 Samsung Electronics Co Ltd 結晶化用光マスク及びこれを利用した薄膜トランジスタ表示板の製造方法
US8314428B2 (en) 2002-12-16 2012-11-20 Samsung Display Co., Ltd. Thin film transistor with LDD/offset structure
JP2015015471A (ja) * 2013-07-04 2015-01-22 上海和輝光電有限公司Ｅｖｅｒｄｉｓｐｌａｙ Ｏｐｔｒｏｎｉｃｓ （Ｓｈａｎｇｈａｉ） Ｌｉｍｉｔｅｄ 多結晶シリコン製造方法
CN107004604A (zh) * 2014-11-25 2017-08-01 株式会社V技术 薄膜晶体管、薄膜晶体管的制造方法以及激光退火装置

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
TW494444B (en) 1999-08-18 2002-07-11 Semiconductor Energy Lab Laser apparatus and laser annealing method
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
CN1404627A (zh) 2000-10-10 2003-03-19 纽约市哥伦比亚大学托管会 处理薄金属层的方法与设备
KR100672628B1 (ko) * 2000-12-29 2007-01-23 엘지.필립스 엘시디 주식회사 액티브 매트릭스 유기 전계발광 디스플레이 장치
JP4744700B2 (ja) * 2001-01-29 2011-08-10 株式会社日立製作所 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
US7009140B2 (en) * 2001-04-18 2006-03-07 Cymer, Inc. Laser thin film poly-silicon annealing optical system
US6645454B2 (en) * 2001-06-28 2003-11-11 Sharp Laboratories Of America, Inc. System and method for regulating lateral growth in laser irradiated silicon films
JP2003059858A (ja) * 2001-08-09 2003-02-28 Sony Corp レーザアニール装置及び薄膜トランジスタの製造方法
KR100885904B1 (ko) * 2001-08-10 2009-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 어닐링장치 및 반도체장치의 제작방법
US6590409B1 (en) * 2001-12-13 2003-07-08 Lsi Logic Corporation Systems and methods for package defect detection
US8288239B2 (en) * 2002-09-30 2012-10-16 Applied Materials, Inc. Thermal flux annealing influence of buried species
KR100493156B1 (ko) * 2002-06-05 2005-06-03 삼성전자주식회사 나노입자를 이용한 비정질 실리콘의 결정화 방법
TWI378307B (en) 2002-08-19 2012-12-01 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
US7718517B2 (en) 2002-08-19 2010-05-18 Im James S Single-shot semiconductor processing system and method having various irradiation patterns
TW200414280A (en) * 2002-09-25 2004-08-01 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device, annealing method, annealing apparatus and display apparatus
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US7332431B2 (en) * 2002-10-17 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2004207616A (ja) * 2002-12-26 2004-07-22 Hitachi Displays Ltd 表示装置
JP5164378B2 (ja) 2003-02-19 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス
EP1468774B1 (en) * 2003-02-28 2009-04-15 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
JP2004266022A (ja) * 2003-02-28 2004-09-24 Sharp Corp 半導体薄膜の結晶成長装置および結晶成長方法
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6939754B2 (en) * 2003-08-13 2005-09-06 Sharp Laboratories Of America, Inc. Isotropic polycrystalline silicon and method for producing same
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
WO2005029549A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US7364952B2 (en) 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
KR100971951B1 (ko) * 2003-09-17 2010-07-23 엘지디스플레이 주식회사 엑시머 레이저를 이용한 비정질 실리콘 박막 결정화 방법
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
JP4413569B2 (ja) * 2003-09-25 2010-02-10 株式会社 日立ディスプレイズ 表示パネルの製造方法及び表示パネル
US7018468B2 (en) * 2003-11-13 2006-03-28 Sharp Laboratories Of America, Inc. Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing
KR101041066B1 (ko) * 2004-02-13 2011-06-13 삼성전자주식회사 실리콘 결정화 방법, 이를 이용한 실리콘 결정화 장치,이를 이용한 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 이를 이용한 표시장치
KR100603330B1 (ko) * 2004-02-16 2006-07-20 삼성에스디아이 주식회사 레이저 결정화 장치
TWI304897B (en) * 2004-11-15 2009-01-01 Au Optronics Corp Method of manufacturing a polysilicon layer and a mask used thereof
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US7674149B2 (en) * 2005-04-21 2010-03-09 Industrial Technology Research Institute Method for fabricating field emitters by using laser-induced re-crystallization
CN101617069B (zh) * 2005-12-05 2012-05-23 纽约市哥伦比亚大学理事会 处理膜的系统和方法以及薄膜
US8846551B2 (en) 2005-12-21 2014-09-30 University Of Virginia Patent Foundation Systems and methods of laser texturing of material surfaces and their applications
US8753990B2 (en) * 2005-12-21 2014-06-17 University Of Virginia Patent Foundation Systems and methods of laser texturing and crystallization of material surfaces
KR100740124B1 (ko) * 2006-10-13 2007-07-16 삼성에스디아이 주식회사 다결정 실리콘 박막 트랜지스터 및 그 제조방법
US20100143744A1 (en) * 2007-03-09 2010-06-10 University Of Virginia Patent Foundation Systems and Methods of Laser Texturing of Material Surfaces and their Applications
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
GB0722120D0 (en) * 2007-11-10 2007-12-19 Quantum Filament Technologies Improved field emission backplate
CN101919058B (zh) 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8334194B2 (en) * 2008-02-06 2012-12-18 Motech Americas, Llc Methods and apparatus for manufacturing semiconductor wafers
US8569155B2 (en) 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
US20100102323A1 (en) * 2008-10-24 2010-04-29 Sposili Robert S Directionally Annealed Silicon Film Having a (100)-Normal Crystallographical Orientation
US8802580B2 (en) 2008-11-14 2014-08-12 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
US8247317B2 (en) * 2009-09-16 2012-08-21 Applied Materials, Inc. Methods of solid phase recrystallization of thin film using pulse train annealing method
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
TWI459444B (zh) 2009-11-30 2014-11-01 應用材料股份有限公司 在半導體應用上的結晶處理
US20120074117A1 (en) * 2010-09-23 2012-03-29 Varian Semiconductor Equipment Associates, Inc. In-situ heating and co-annealing for laser annealed junction formation
JP5891504B2 (ja) * 2011-03-08 2016-03-23 株式会社Ｊｏｌｅｄ 薄膜トランジスタアレイ装置の製造方法
US10131086B2 (en) 2011-06-30 2018-11-20 University Of Virginia Patent Foundation Micro-structure and nano-structure replication methods and article of manufacture
TWI624862B (zh) * 2012-06-11 2018-05-21 應用材料股份有限公司 在脈衝式雷射退火中使用紅外線干涉技術之熔化深度測定
US10226837B2 (en) 2013-03-15 2019-03-12 Nlight, Inc. Thermal processing with line beams
US9413137B2 (en) 2013-03-15 2016-08-09 Nlight, Inc. Pulsed line beam device processing systems using laser diodes
DE102013224693A1 (de) * 2013-12-02 2015-06-03 Eos Gmbh Electro Optical Systems Verfahren zur beschleunigten Herstellung von Objekten mittels generativer Fertigung
TW201528379A (zh) * 2013-12-20 2015-07-16 應用材料股份有限公司 雙波長退火方法與設備
EP2899749A1 (en) * 2014-01-24 2015-07-29 Excico France Method for forming polycrystalline silicon by laser irradiation
WO2015127031A1 (en) * 2014-02-19 2015-08-27 The Trustees Of Columbia University In The City Of New York Sequential laser firing for thin film processing
US9106887B1 (en) * 2014-03-13 2015-08-11 Wowza Media Systems, LLC Adjusting encoding parameters at a mobile device based on a change in available network bandwidth
KR102235601B1 (ko) 2014-05-29 2021-04-05 삼성디스플레이 주식회사 박막트랜지스터의 활성층 결정화 장치 및 그것을 이용한 결정화 방법
US10466494B2 (en) 2015-12-18 2019-11-05 Nlight, Inc. Reverse interleaving for laser line generators
GB201614342D0 (en) * 2016-08-22 2016-10-05 M-Solv Ltd An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06345415A (ja) * 1993-05-27 1994-12-20 Samsung Electron Co Ltd 多結晶シリコンの製造方法および装置
JPH08148423A (ja) * 1994-11-18 1996-06-07 Mitsubishi Electric Corp レーザアニーリング方法
JPH08186268A (ja) * 1994-12-28 1996-07-16 Sony Corp 薄膜半導体装置の製造方法
JPH09213651A (ja) * 1996-02-06 1997-08-15 Sharp Corp 半導体薄膜の製造装置および半導体薄膜の製造方法
JPH11307450A (ja) * 1998-04-17 1999-11-05 Nec Corp 薄膜の改質方法及びその実施に使用する装置
JP2000505241A (ja) * 1996-05-28 2000-04-25 ザ トラスティース オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス
JP2001044120A (ja) * 1999-08-04 2001-02-16 Mitsubishi Electric Corp レーザ熱処理方法およびレーザ熱処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100234895B1 (ko) * 1997-05-12 1999-12-15 구본준 비정질 실리콘의 결정화 방법
KR100327087B1 (ko) * 1999-06-28 2002-03-13 구본준, 론 위라하디락사 레이저 어닐링 방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06345415A (ja) * 1993-05-27 1994-12-20 Samsung Electron Co Ltd 多結晶シリコンの製造方法および装置
JPH08148423A (ja) * 1994-11-18 1996-06-07 Mitsubishi Electric Corp レーザアニーリング方法
JPH08186268A (ja) * 1994-12-28 1996-07-16 Sony Corp 薄膜半導体装置の製造方法
JPH09213651A (ja) * 1996-02-06 1997-08-15 Sharp Corp 半導体薄膜の製造装置および半導体薄膜の製造方法
JP2000505241A (ja) * 1996-05-28 2000-04-25 ザ トラスティース オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス
JPH11307450A (ja) * 1998-04-17 1999-11-05 Nec Corp 薄膜の改質方法及びその実施に使用する装置
JP2001044120A (ja) * 1999-08-04 2001-02-16 Mitsubishi Electric Corp レーザ熱処理方法およびレーザ熱処理装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003015117A1 (en) * 2001-08-11 2003-02-20 The University Court Of The University Of Dundee Field emission backplate
US7592191B2 (en) 2001-08-11 2009-09-22 The University Court Of The University Of Dundee Field emission backplate
JP2004172569A (ja) * 2002-11-19 2004-06-17 Samsung Sdi Co Ltd 均一性に優れた薄膜トランジスタ及びこれを用いる有機電界発光素子
US8314428B2 (en) 2002-12-16 2012-11-20 Samsung Display Co., Ltd. Thin film transistor with LDD/offset structure
JP2012064954A (ja) * 2004-01-06 2012-03-29 Samsung Electronics Co Ltd 結晶化用光マスク及びこれを利用した薄膜トランジスタ表示板の製造方法
JP2015015471A (ja) * 2013-07-04 2015-01-22 上海和輝光電有限公司Ｅｖｅｒｄｉｓｐｌａｙ Ｏｐｔｒｏｎｉｃｓ （Ｓｈａｎｇｈａｉ） Ｌｉｍｉｔｅｄ 多結晶シリコン製造方法
CN107004604A (zh) * 2014-11-25 2017-08-01 株式会社V技术 薄膜晶体管、薄膜晶体管的制造方法以及激光退火装置

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