TW526521B - Electrostatic chuck with porous regions - Google Patents

Electrostatic chuck with porous regions Download PDF

Info

Publication number
TW526521B
TW526521B TW090119231A TW90119231A TW526521B TW 526521 B TW526521 B TW 526521B TW 090119231 A TW090119231 A TW 090119231A TW 90119231 A TW90119231 A TW 90119231A TW 526521 B TW526521 B TW 526521B
Authority
TW
Taiwan
Prior art keywords
porous
chuck
electrostatic chuck
patent application
chuck body
Prior art date
Application number
TW090119231A
Other languages
English (en)
Chinese (zh)
Inventor
Ramesh Divakar
Original Assignee
Saint Gobain Ceramics & Amp Pl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics & Amp Pl filed Critical Saint Gobain Ceramics & Amp Pl
Application granted granted Critical
Publication of TW526521B publication Critical patent/TW526521B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Porous Artificial Stone Or Porous Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Holding Or Fastening Of Disk On Rotational Shaft (AREA)
TW090119231A 2000-09-05 2001-08-07 Electrostatic chuck with porous regions TW526521B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/655,324 US6606234B1 (en) 2000-09-05 2000-09-05 Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow

Publications (1)

Publication Number Publication Date
TW526521B true TW526521B (en) 2003-04-01

Family

ID=24628428

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090119231A TW526521B (en) 2000-09-05 2001-08-07 Electrostatic chuck with porous regions

Country Status (9)

Country Link
US (1) US6606234B1 (https=)
EP (1) EP1316110B1 (https=)
JP (1) JP4959905B2 (https=)
KR (1) KR100557695B1 (https=)
AT (1) ATE417358T1 (https=)
AU (1) AU2001277237A1 (https=)
DE (1) DE60136940D1 (https=)
TW (1) TW526521B (https=)
WO (1) WO2002021590A2 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8075729B2 (en) 2004-10-07 2011-12-13 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
CN103280415A (zh) * 2008-06-20 2013-09-04 瓦里安半导体设备公司 减少基材上粒子污染的接地引脚
TWI818997B (zh) * 2018-06-04 2023-10-21 美商應用材料股份有限公司 基板支撐基座
TWI835734B (zh) * 2017-07-25 2024-03-21 日商新光電氣工業股份有限公司 靜電吸盤的製造方法

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100536844C (zh) * 2000-12-07 2009-09-09 尼科梅德有限责任公司 包含酸不稳定活性成分的糊剂形式的药物制剂
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US6490145B1 (en) * 2001-07-18 2002-12-03 Applied Materials, Inc. Substrate support pedestal
TW561515B (en) * 2001-11-30 2003-11-11 Tokyo Electron Ltd Processing device, and gas discharge suppressing member
US20030219986A1 (en) * 2002-05-22 2003-11-27 Applied Materials, Inc. Substrate carrier for processing substrates
KR100457833B1 (ko) * 2002-05-24 2004-11-18 주성엔지니어링(주) 플라즈마 식각 장치
JP4095842B2 (ja) * 2002-06-26 2008-06-04 日本特殊陶業株式会社 静電チャック
JP2004306191A (ja) * 2003-04-07 2004-11-04 Seiko Epson Corp テーブル装置、成膜装置、光学素子、半導体素子及び電子機器
DE102004060625A1 (de) * 2004-12-16 2006-06-29 Siltronic Ag Beschichtete Halbleiterscheibe und Verfahren und Vorrichtung zur Herstellung der Halbleiterscheibe
US7235139B2 (en) * 2003-10-28 2007-06-26 Veeco Instruments Inc. Wafer carrier for growing GaN wafers
US7245357B2 (en) * 2003-12-15 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7220497B2 (en) * 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US20060023395A1 (en) * 2004-07-30 2006-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for temperature control of semiconductor wafers
JP4350695B2 (ja) * 2004-12-01 2009-10-21 株式会社フューチャービジョン 処理装置
US7731798B2 (en) * 2004-12-01 2010-06-08 Ultratech, Inc. Heated chuck for laser thermal processing
CN101115862A (zh) * 2005-02-16 2008-01-30 维高仪器股份有限公司 用于生长GaN晶片的晶片承载器
US20090016941A1 (en) * 2006-01-11 2009-01-15 Ngk Insulators Ltd. Electrode Device For Plasma Discharge
US20080009417A1 (en) * 2006-07-05 2008-01-10 General Electric Company Coating composition, article, and associated method
US7983017B2 (en) * 2006-12-26 2011-07-19 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
US7848076B2 (en) * 2007-07-31 2010-12-07 Applied Materials, Inc. Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
US8108981B2 (en) * 2007-07-31 2012-02-07 Applied Materials, Inc. Method of making an electrostatic chuck with reduced plasma penetration and arcing
US9202736B2 (en) * 2007-07-31 2015-12-01 Applied Materials, Inc. Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing
JP2008172255A (ja) * 2008-01-25 2008-07-24 Ngk Spark Plug Co Ltd 静電チャック
US8218284B2 (en) * 2008-07-24 2012-07-10 Hermes-Microvision, Inc. Apparatus for increasing electric conductivity to a semiconductor wafer substrate when exposure to electron beam
US8094428B2 (en) * 2008-10-27 2012-01-10 Hermes-Microvision, Inc. Wafer grounding methodology
US20100107974A1 (en) * 2008-11-06 2010-05-06 Asm America, Inc. Substrate holder with varying density
US9218997B2 (en) * 2008-11-06 2015-12-22 Applied Materials, Inc. Electrostatic chuck having reduced arcing
US20100177454A1 (en) * 2009-01-09 2010-07-15 Component Re-Engineering Company, Inc. Electrostatic chuck with dielectric inserts
US20110024049A1 (en) * 2009-07-30 2011-02-03 c/o Lam Research Corporation Light-up prevention in electrostatic chucks
US9338871B2 (en) 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US8880227B2 (en) 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
US8608852B2 (en) 2010-06-11 2013-12-17 Applied Materials, Inc. Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
US8906164B2 (en) 2010-08-05 2014-12-09 Lam Research Corporation Methods for stabilizing contact surfaces of electrostatic chucks
JP5458050B2 (ja) 2011-03-30 2014-04-02 日本碍子株式会社 静電チャックの製法
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
JP5956379B2 (ja) * 2012-04-27 2016-07-27 日本碍子株式会社 半導体製造装置用部材
KR102032744B1 (ko) 2012-09-05 2019-11-11 삼성디스플레이 주식회사 기판 고정장치 및 이의 제조방법
CN104748574A (zh) * 2013-12-27 2015-07-01 北京思能达节能电气股份有限公司 一种用于监测自焙电极焙烧状态的系统和方法
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
CN107004626B (zh) * 2014-11-20 2019-02-05 住友大阪水泥股份有限公司 静电卡盘装置
EP3262677B1 (en) 2015-02-23 2025-11-26 II-VI Delaware, Inc. Film electrode for electrostatic chuck
JP6722518B2 (ja) * 2016-06-09 2020-07-15 新光電気工業株式会社 焼結体及びその製造方法と静電チャック
JP6854600B2 (ja) * 2016-07-15 2021-04-07 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、および基板載置台
US20180025931A1 (en) * 2016-07-22 2018-01-25 Applied Materials, Inc. Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing
US10975469B2 (en) * 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
JP7052735B2 (ja) * 2017-09-29 2022-04-12 住友大阪セメント株式会社 静電チャック装置
KR102039802B1 (ko) * 2017-12-19 2019-11-26 한국세라믹기술원 정전척용 세라믹 본체
US10411380B1 (en) 2018-05-24 2019-09-10 Microsoft Technology Licensing, Llc Connectors with liquid metal and gas permeable plugs
CN111668148B (zh) * 2019-03-05 2024-09-03 Toto株式会社 静电吸盘及处理装置
CN112687602B (zh) * 2019-10-18 2024-11-08 中微半导体设备(上海)股份有限公司 一种静电吸盘及其制造方法、等离子体处理装置
JP7345379B2 (ja) * 2019-12-06 2023-09-15 株式会社ディスコ ゲッタリング性評価装置
KR102779855B1 (ko) * 2021-02-17 2025-03-10 어플라이드 머티어리얼스, 인코포레이티드 다공성 플러그 본딩
US11794296B2 (en) * 2022-02-03 2023-10-24 Applied Materials, Inc. Electrostatic chuck with porous plug
JP7577898B2 (ja) 2022-07-07 2024-11-05 日本特殊陶業株式会社 保持装置
US20240112889A1 (en) * 2022-09-30 2024-04-04 Applied Materials, Inc. Large diameter porous plug for argon delivery
US12600682B2 (en) 2022-11-11 2026-04-14 Applied Materials, Inc. Monolithic substrate support having porous features and methods of forming the same
CN120345057A (zh) * 2022-12-21 2025-07-18 东京毅力科创株式会社 基片处理装置和静电卡盘
KR102795089B1 (ko) * 2022-12-28 2025-04-15 세메스 주식회사 서셉터 및 그 제조방법
KR20250068704A (ko) 2023-04-19 2025-05-16 니혼도꾸슈도교 가부시키가이샤 유지 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62155517A (ja) * 1985-12-27 1987-07-10 Canon Inc パターン描画装置及び方法
US5542559A (en) 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5792562A (en) 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
JPH0917770A (ja) * 1995-06-28 1997-01-17 Sony Corp プラズマ処理方法およびこれに用いるプラズマ装置
JP3457477B2 (ja) 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
US6399143B1 (en) 1996-04-09 2002-06-04 Delsys Pharmaceutical Corporation Method for clamping and electrostatically coating a substrate
JPH09289201A (ja) * 1996-04-23 1997-11-04 Tokyo Electron Ltd プラズマ処理装置
US6022807A (en) * 1996-04-24 2000-02-08 Micro Processing Technology, Inc. Method for fabricating an integrated circuit
US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
US5835334A (en) 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
US6045753A (en) * 1997-07-29 2000-04-04 Sarnoff Corporation Deposited reagents for chemical processes
US6004752A (en) * 1997-07-29 1999-12-21 Sarnoff Corporation Solid support with attached molecules
JPH11260899A (ja) * 1998-03-10 1999-09-24 Nippon Steel Corp 静電チャック
JP2001308075A (ja) * 2000-04-26 2001-11-02 Toshiba Ceramics Co Ltd ウェーハ支持体

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8075729B2 (en) 2004-10-07 2011-12-13 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
CN103280415A (zh) * 2008-06-20 2013-09-04 瓦里安半导体设备公司 减少基材上粒子污染的接地引脚
TWI835734B (zh) * 2017-07-25 2024-03-21 日商新光電氣工業股份有限公司 靜電吸盤的製造方法
TWI818997B (zh) * 2018-06-04 2023-10-21 美商應用材料股份有限公司 基板支撐基座
TWI856820B (zh) * 2018-06-04 2024-09-21 美商應用材料股份有限公司 基板支撐基座
US12537173B2 (en) 2018-06-04 2026-01-27 Applied Materials, Inc. Substrate support pedestal

Also Published As

Publication number Publication date
JP4959905B2 (ja) 2012-06-27
KR20030031177A (ko) 2003-04-18
DE60136940D1 (de) 2009-01-22
JP2004508728A (ja) 2004-03-18
US6606234B1 (en) 2003-08-12
WO2002021590A3 (en) 2002-08-01
EP1316110B1 (en) 2008-12-10
AU2001277237A1 (en) 2002-03-22
ATE417358T1 (de) 2008-12-15
KR100557695B1 (ko) 2006-03-07
EP1316110A2 (en) 2003-06-04
WO2002021590A2 (en) 2002-03-14

Similar Documents

Publication Publication Date Title
TW526521B (en) Electrostatic chuck with porous regions
JP4476701B2 (ja) 電極内蔵焼結体の製造方法
TW569643B (en) Ceramic heater and ceramic joined article
JP4467453B2 (ja) セラミックス部材及びその製造方法
JP4744855B2 (ja) 静電チャック
US20040175549A1 (en) Ceramic connection body, method of connecting the ceramic bodies, and ceramic structural body
JP5396353B2 (ja) 静電チャック及びその製法
EP1394136A1 (en) Ceramic bonded body and its producing method, and ceramic structure for semiconductor wafer
JP5154871B2 (ja) 静電チャック及びその製造方法
EP1422754A1 (en) Ceramic joint body
KR20080025012A (ko) 정전 척 및 그 제조 방법
JP2010042967A (ja) セラミックス部材、セラミックス部材の作成方法及び静電チャック
JP3830382B2 (ja) セラミック焼結体およびその製造方法
JP2002261157A (ja) 静電チャック及び処理装置
US20050082274A1 (en) Substrate heater and fabrication method for the same
JP2008135737A (ja) 静電チャック及び静電チャックの製造方法
CN107207367A (zh) 用于制造大型共烧物件的改进的方法
TWI359473B (en) Electrostatic chuck heater
JP2003317906A (ja) セラミックスヒータ
JP2006269826A (ja) 静電チャック及びその製造方法
JP2009141344A (ja) 基板保持体
JP3393742B2 (ja) ウエハ保持部材
JP2001319964A (ja) 半導体製造・検査装置
JP2002170870A (ja) 半導体製造・検査装置用セラミック基板および静電チャック
JP2001358205A (ja) 半導体製造・検査装置

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent