KR100557695B1 - 다공성 영역들을 갖는 정전기 척 - Google Patents

다공성 영역들을 갖는 정전기 척 Download PDF

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Publication number
KR100557695B1
KR100557695B1 KR1020037003208A KR20037003208A KR100557695B1 KR 100557695 B1 KR100557695 B1 KR 100557695B1 KR 1020037003208 A KR1020037003208 A KR 1020037003208A KR 20037003208 A KR20037003208 A KR 20037003208A KR 100557695 B1 KR100557695 B1 KR 100557695B1
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KR
South Korea
Prior art keywords
delete delete
chuck
porous
electrostatic chuck
porous region
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Expired - Lifetime
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KR1020037003208A
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English (en)
Korean (ko)
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KR20030031177A (ko
Inventor
라메쉬 디바카
Original Assignee
생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드
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Application filed by 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 filed Critical 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드
Publication of KR20030031177A publication Critical patent/KR20030031177A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Porous Artificial Stone Or Porous Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Holding Or Fastening Of Disk On Rotational Shaft (AREA)
KR1020037003208A 2000-09-05 2001-08-01 다공성 영역들을 갖는 정전기 척 Expired - Lifetime KR100557695B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/655,324 US6606234B1 (en) 2000-09-05 2000-09-05 Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow
US09/655,324 2000-09-05
PCT/US2001/024135 WO2002021590A2 (en) 2000-09-05 2001-08-01 Electrostatic chuck with porous regions

Publications (2)

Publication Number Publication Date
KR20030031177A KR20030031177A (ko) 2003-04-18
KR100557695B1 true KR100557695B1 (ko) 2006-03-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037003208A Expired - Lifetime KR100557695B1 (ko) 2000-09-05 2001-08-01 다공성 영역들을 갖는 정전기 척

Country Status (9)

Country Link
US (1) US6606234B1 (https=)
EP (1) EP1316110B1 (https=)
JP (1) JP4959905B2 (https=)
KR (1) KR100557695B1 (https=)
AT (1) ATE417358T1 (https=)
AU (1) AU2001277237A1 (https=)
DE (1) DE60136940D1 (https=)
TW (1) TW526521B (https=)
WO (1) WO2002021590A2 (https=)

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KR100858780B1 (ko) * 2004-12-01 2008-09-17 가부시끼가이샤 퓨처 비전 피처리 기판의 표면 처리 장치
KR20190073900A (ko) * 2017-12-19 2019-06-27 한국세라믹기술원 정전척용 세라믹 본체

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KR100457833B1 (ko) * 2002-05-24 2004-11-18 주성엔지니어링(주) 플라즈마 식각 장치
JP4095842B2 (ja) * 2002-06-26 2008-06-04 日本特殊陶業株式会社 静電チャック
JP2004306191A (ja) * 2003-04-07 2004-11-04 Seiko Epson Corp テーブル装置、成膜装置、光学素子、半導体素子及び電子機器
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US7235139B2 (en) * 2003-10-28 2007-06-26 Veeco Instruments Inc. Wafer carrier for growing GaN wafers
US7245357B2 (en) * 2003-12-15 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7220497B2 (en) * 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
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US9202736B2 (en) * 2007-07-31 2015-12-01 Applied Materials, Inc. Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing
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JP5458050B2 (ja) 2011-03-30 2014-04-02 日本碍子株式会社 静電チャックの製法
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
JP5956379B2 (ja) * 2012-04-27 2016-07-27 日本碍子株式会社 半導体製造装置用部材
KR102032744B1 (ko) 2012-09-05 2019-11-11 삼성디스플레이 주식회사 기판 고정장치 및 이의 제조방법
CN104748574A (zh) * 2013-12-27 2015-07-01 北京思能达节能电气股份有限公司 一种用于监测自焙电极焙烧状态的系统和方法
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
CN107004626B (zh) * 2014-11-20 2019-02-05 住友大阪水泥股份有限公司 静电卡盘装置
EP3262677B1 (en) 2015-02-23 2025-11-26 II-VI Delaware, Inc. Film electrode for electrostatic chuck
JP6722518B2 (ja) * 2016-06-09 2020-07-15 新光電気工業株式会社 焼結体及びその製造方法と静電チャック
JP6854600B2 (ja) * 2016-07-15 2021-04-07 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、および基板載置台
US20180025931A1 (en) * 2016-07-22 2018-01-25 Applied Materials, Inc. Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing
US10975469B2 (en) * 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
JP2019029384A (ja) * 2017-07-25 2019-02-21 新光電気工業株式会社 セラミックス混合物、多孔質体及びその製造方法、静電チャック及びその製造方法、基板固定装置
JP7052735B2 (ja) * 2017-09-29 2022-04-12 住友大阪セメント株式会社 静電チャック装置
US10411380B1 (en) 2018-05-24 2019-09-10 Microsoft Technology Licensing, Llc Connectors with liquid metal and gas permeable plugs
US11456161B2 (en) * 2018-06-04 2022-09-27 Applied Materials, Inc. Substrate support pedestal
CN111668148B (zh) * 2019-03-05 2024-09-03 Toto株式会社 静电吸盘及处理装置
CN112687602B (zh) * 2019-10-18 2024-11-08 中微半导体设备(上海)股份有限公司 一种静电吸盘及其制造方法、等离子体处理装置
JP7345379B2 (ja) * 2019-12-06 2023-09-15 株式会社ディスコ ゲッタリング性評価装置
KR102779855B1 (ko) * 2021-02-17 2025-03-10 어플라이드 머티어리얼스, 인코포레이티드 다공성 플러그 본딩
US11794296B2 (en) * 2022-02-03 2023-10-24 Applied Materials, Inc. Electrostatic chuck with porous plug
JP7577898B2 (ja) 2022-07-07 2024-11-05 日本特殊陶業株式会社 保持装置
US20240112889A1 (en) * 2022-09-30 2024-04-04 Applied Materials, Inc. Large diameter porous plug for argon delivery
US12600682B2 (en) 2022-11-11 2026-04-14 Applied Materials, Inc. Monolithic substrate support having porous features and methods of forming the same
CN120345057A (zh) * 2022-12-21 2025-07-18 东京毅力科创株式会社 基片处理装置和静电卡盘
KR102795089B1 (ko) * 2022-12-28 2025-04-15 세메스 주식회사 서셉터 및 그 제조방법
KR20250068704A (ko) 2023-04-19 2025-05-16 니혼도꾸슈도교 가부시키가이샤 유지 장치

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100858780B1 (ko) * 2004-12-01 2008-09-17 가부시끼가이샤 퓨처 비전 피처리 기판의 표면 처리 장치
KR20190073900A (ko) * 2017-12-19 2019-06-27 한국세라믹기술원 정전척용 세라믹 본체
KR102039802B1 (ko) * 2017-12-19 2019-11-26 한국세라믹기술원 정전척용 세라믹 본체

Also Published As

Publication number Publication date
JP4959905B2 (ja) 2012-06-27
KR20030031177A (ko) 2003-04-18
DE60136940D1 (de) 2009-01-22
JP2004508728A (ja) 2004-03-18
US6606234B1 (en) 2003-08-12
WO2002021590A3 (en) 2002-08-01
EP1316110B1 (en) 2008-12-10
AU2001277237A1 (en) 2002-03-22
ATE417358T1 (de) 2008-12-15
EP1316110A2 (en) 2003-06-04
TW526521B (en) 2003-04-01
WO2002021590A2 (en) 2002-03-14

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