DE60136940D1 - Elektrostatischer scheibenhalter mit porösen bereichen - Google Patents

Elektrostatischer scheibenhalter mit porösen bereichen

Info

Publication number
DE60136940D1
DE60136940D1 DE60136940T DE60136940T DE60136940D1 DE 60136940 D1 DE60136940 D1 DE 60136940D1 DE 60136940 T DE60136940 T DE 60136940T DE 60136940 T DE60136940 T DE 60136940T DE 60136940 D1 DE60136940 D1 DE 60136940D1
Authority
DE
Germany
Prior art keywords
porous region
disc holder
electrostatic chuck
porous areas
chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60136940T
Other languages
German (de)
English (en)
Inventor
Ramesh Divakar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Ceramics and Plastics Inc
Original Assignee
Saint Gobain Ceramics and Plastics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics and Plastics Inc filed Critical Saint Gobain Ceramics and Plastics Inc
Application granted granted Critical
Publication of DE60136940D1 publication Critical patent/DE60136940D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722Details of electrostatic chucks

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Porous Artificial Stone Or Porous Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Holding Or Fastening Of Disk On Rotational Shaft (AREA)
DE60136940T 2000-09-05 2001-08-01 Elektrostatischer scheibenhalter mit porösen bereichen Expired - Fee Related DE60136940D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/655,324 US6606234B1 (en) 2000-09-05 2000-09-05 Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow
PCT/US2001/024135 WO2002021590A2 (en) 2000-09-05 2001-08-01 Electrostatic chuck with porous regions

Publications (1)

Publication Number Publication Date
DE60136940D1 true DE60136940D1 (de) 2009-01-22

Family

ID=24628428

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60136940T Expired - Fee Related DE60136940D1 (de) 2000-09-05 2001-08-01 Elektrostatischer scheibenhalter mit porösen bereichen

Country Status (9)

Country Link
US (1) US6606234B1 (https=)
EP (1) EP1316110B1 (https=)
JP (1) JP4959905B2 (https=)
KR (1) KR100557695B1 (https=)
AT (1) ATE417358T1 (https=)
AU (1) AU2001277237A1 (https=)
DE (1) DE60136940D1 (https=)
TW (1) TW526521B (https=)
WO (1) WO2002021590A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104748574A (zh) * 2013-12-27 2015-07-01 北京思能达节能电气股份有限公司 一种用于监测自焙电极焙烧状态的系统和方法

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100536844C (zh) * 2000-12-07 2009-09-09 尼科梅德有限责任公司 包含酸不稳定活性成分的糊剂形式的药物制剂
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US6490145B1 (en) * 2001-07-18 2002-12-03 Applied Materials, Inc. Substrate support pedestal
TW561515B (en) * 2001-11-30 2003-11-11 Tokyo Electron Ltd Processing device, and gas discharge suppressing member
US20030219986A1 (en) * 2002-05-22 2003-11-27 Applied Materials, Inc. Substrate carrier for processing substrates
KR100457833B1 (ko) * 2002-05-24 2004-11-18 주성엔지니어링(주) 플라즈마 식각 장치
JP4095842B2 (ja) * 2002-06-26 2008-06-04 日本特殊陶業株式会社 静電チャック
JP2004306191A (ja) * 2003-04-07 2004-11-04 Seiko Epson Corp テーブル装置、成膜装置、光学素子、半導体素子及び電子機器
DE102004060625A1 (de) * 2004-12-16 2006-06-29 Siltronic Ag Beschichtete Halbleiterscheibe und Verfahren und Vorrichtung zur Herstellung der Halbleiterscheibe
US7235139B2 (en) * 2003-10-28 2007-06-26 Veeco Instruments Inc. Wafer carrier for growing GaN wafers
US7245357B2 (en) * 2003-12-15 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7220497B2 (en) * 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US20060023395A1 (en) * 2004-07-30 2006-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for temperature control of semiconductor wafers
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
JP4350695B2 (ja) * 2004-12-01 2009-10-21 株式会社フューチャービジョン 処理装置
US7731798B2 (en) * 2004-12-01 2010-06-08 Ultratech, Inc. Heated chuck for laser thermal processing
CN101115862A (zh) * 2005-02-16 2008-01-30 维高仪器股份有限公司 用于生长GaN晶片的晶片承载器
US20090016941A1 (en) * 2006-01-11 2009-01-15 Ngk Insulators Ltd. Electrode Device For Plasma Discharge
US20080009417A1 (en) * 2006-07-05 2008-01-10 General Electric Company Coating composition, article, and associated method
US7983017B2 (en) * 2006-12-26 2011-07-19 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
US7848076B2 (en) * 2007-07-31 2010-12-07 Applied Materials, Inc. Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
US8108981B2 (en) * 2007-07-31 2012-02-07 Applied Materials, Inc. Method of making an electrostatic chuck with reduced plasma penetration and arcing
US9202736B2 (en) * 2007-07-31 2015-12-01 Applied Materials, Inc. Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing
JP2008172255A (ja) * 2008-01-25 2008-07-24 Ngk Spark Plug Co Ltd 静電チャック
US8681472B2 (en) * 2008-06-20 2014-03-25 Varian Semiconductor Equipment Associates, Inc. Platen ground pin for connecting substrate to ground
US8218284B2 (en) * 2008-07-24 2012-07-10 Hermes-Microvision, Inc. Apparatus for increasing electric conductivity to a semiconductor wafer substrate when exposure to electron beam
US8094428B2 (en) * 2008-10-27 2012-01-10 Hermes-Microvision, Inc. Wafer grounding methodology
US20100107974A1 (en) * 2008-11-06 2010-05-06 Asm America, Inc. Substrate holder with varying density
US9218997B2 (en) * 2008-11-06 2015-12-22 Applied Materials, Inc. Electrostatic chuck having reduced arcing
US20100177454A1 (en) * 2009-01-09 2010-07-15 Component Re-Engineering Company, Inc. Electrostatic chuck with dielectric inserts
US20110024049A1 (en) * 2009-07-30 2011-02-03 c/o Lam Research Corporation Light-up prevention in electrostatic chucks
US9338871B2 (en) 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US8880227B2 (en) 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
US8608852B2 (en) 2010-06-11 2013-12-17 Applied Materials, Inc. Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
US8906164B2 (en) 2010-08-05 2014-12-09 Lam Research Corporation Methods for stabilizing contact surfaces of electrostatic chucks
JP5458050B2 (ja) 2011-03-30 2014-04-02 日本碍子株式会社 静電チャックの製法
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
JP5956379B2 (ja) * 2012-04-27 2016-07-27 日本碍子株式会社 半導体製造装置用部材
KR102032744B1 (ko) 2012-09-05 2019-11-11 삼성디스플레이 주식회사 기판 고정장치 및 이의 제조방법
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
CN107004626B (zh) * 2014-11-20 2019-02-05 住友大阪水泥股份有限公司 静电卡盘装置
EP3262677B1 (en) 2015-02-23 2025-11-26 II-VI Delaware, Inc. Film electrode for electrostatic chuck
JP6722518B2 (ja) * 2016-06-09 2020-07-15 新光電気工業株式会社 焼結体及びその製造方法と静電チャック
JP6854600B2 (ja) * 2016-07-15 2021-04-07 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、および基板載置台
US20180025931A1 (en) * 2016-07-22 2018-01-25 Applied Materials, Inc. Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing
US10975469B2 (en) * 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
JP2019029384A (ja) * 2017-07-25 2019-02-21 新光電気工業株式会社 セラミックス混合物、多孔質体及びその製造方法、静電チャック及びその製造方法、基板固定装置
JP7052735B2 (ja) * 2017-09-29 2022-04-12 住友大阪セメント株式会社 静電チャック装置
KR102039802B1 (ko) * 2017-12-19 2019-11-26 한국세라믹기술원 정전척용 세라믹 본체
US10411380B1 (en) 2018-05-24 2019-09-10 Microsoft Technology Licensing, Llc Connectors with liquid metal and gas permeable plugs
US11456161B2 (en) * 2018-06-04 2022-09-27 Applied Materials, Inc. Substrate support pedestal
CN111668148B (zh) * 2019-03-05 2024-09-03 Toto株式会社 静电吸盘及处理装置
CN112687602B (zh) * 2019-10-18 2024-11-08 中微半导体设备(上海)股份有限公司 一种静电吸盘及其制造方法、等离子体处理装置
JP7345379B2 (ja) * 2019-12-06 2023-09-15 株式会社ディスコ ゲッタリング性評価装置
KR102779855B1 (ko) * 2021-02-17 2025-03-10 어플라이드 머티어리얼스, 인코포레이티드 다공성 플러그 본딩
US11794296B2 (en) * 2022-02-03 2023-10-24 Applied Materials, Inc. Electrostatic chuck with porous plug
JP7577898B2 (ja) 2022-07-07 2024-11-05 日本特殊陶業株式会社 保持装置
US20240112889A1 (en) * 2022-09-30 2024-04-04 Applied Materials, Inc. Large diameter porous plug for argon delivery
US12600682B2 (en) 2022-11-11 2026-04-14 Applied Materials, Inc. Monolithic substrate support having porous features and methods of forming the same
CN120345057A (zh) * 2022-12-21 2025-07-18 东京毅力科创株式会社 基片处理装置和静电卡盘
KR102795089B1 (ko) * 2022-12-28 2025-04-15 세메스 주식회사 서셉터 및 그 제조방법
KR20250068704A (ko) 2023-04-19 2025-05-16 니혼도꾸슈도교 가부시키가이샤 유지 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62155517A (ja) * 1985-12-27 1987-07-10 Canon Inc パターン描画装置及び方法
US5542559A (en) 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5792562A (en) 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
JPH0917770A (ja) * 1995-06-28 1997-01-17 Sony Corp プラズマ処理方法およびこれに用いるプラズマ装置
JP3457477B2 (ja) 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
US6399143B1 (en) 1996-04-09 2002-06-04 Delsys Pharmaceutical Corporation Method for clamping and electrostatically coating a substrate
JPH09289201A (ja) * 1996-04-23 1997-11-04 Tokyo Electron Ltd プラズマ処理装置
US6022807A (en) * 1996-04-24 2000-02-08 Micro Processing Technology, Inc. Method for fabricating an integrated circuit
US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
US5835334A (en) 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
US6045753A (en) * 1997-07-29 2000-04-04 Sarnoff Corporation Deposited reagents for chemical processes
US6004752A (en) * 1997-07-29 1999-12-21 Sarnoff Corporation Solid support with attached molecules
JPH11260899A (ja) * 1998-03-10 1999-09-24 Nippon Steel Corp 静電チャック
JP2001308075A (ja) * 2000-04-26 2001-11-02 Toshiba Ceramics Co Ltd ウェーハ支持体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104748574A (zh) * 2013-12-27 2015-07-01 北京思能达节能电气股份有限公司 一种用于监测自焙电极焙烧状态的系统和方法

Also Published As

Publication number Publication date
JP4959905B2 (ja) 2012-06-27
KR20030031177A (ko) 2003-04-18
JP2004508728A (ja) 2004-03-18
US6606234B1 (en) 2003-08-12
WO2002021590A3 (en) 2002-08-01
EP1316110B1 (en) 2008-12-10
AU2001277237A1 (en) 2002-03-22
ATE417358T1 (de) 2008-12-15
KR100557695B1 (ko) 2006-03-07
EP1316110A2 (en) 2003-06-04
TW526521B (en) 2003-04-01
WO2002021590A2 (en) 2002-03-14

Similar Documents

Publication Publication Date Title
DE60136940D1 (de) Elektrostatischer scheibenhalter mit porösen bereichen
JP7169319B2 (ja) ガス孔に開口縮小プラグを有する大電力静電チャック
DE60135672D1 (de) Elektrostatisch festgeklemmter randring für die plasmaverarbeitung
ATE449419T1 (de) Regulierbarer, hochtemperatur-halter für plasma- cvd einer hohen dichte
TWI358785B (https=)
DE60218669D1 (de) Hochtemperatur elektrostatischer halter
KR940016554A (ko) 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
JP2003517198A5 (https=)
SE0001367D0 (sv) Apparat och förfarande för elektrokemisk bearbetning av substrat
AU2003291477A8 (en) A chucking system and method for modulating shapes of substrates
WO2003014416A3 (en) Plating device and method
TW430919B (en) Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces
WO2002009171A1 (en) Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober
AU2000250703A1 (en) Shrinking device for a toolholder
WO2019082875A1 (ja) 試料保持具
DE60045384D1 (de) Mehrzonenwiderstandsheizung
TW200741943A (en) Transfer of wafers with edge grip
ATE476536T1 (de) Suszeptorsystem
TW200509291A (en) MEMS based multi-polar electrostatic chuck
MXPA04004990A (es) Articulo absorbente y metodo para la produccion de un articulo absorbente.
MY133452A (en) Polishing method for wafer and holding plate
TW200511379A (en) Vacuum chuck utilizing sintered material and method of providing thereof
DE60045223D1 (de) Wafer poliermaschinentisch, wafer polierverfahren und halbleiterschleife herstellungsverfahren
TW200721342A (en) Wafer holder for wafer prober and wafer prober equipped with the same
AU2002366688A1 (en) Fast heating cathode

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee