JP2003517198A5 - - Google Patents

Download PDF

Info

Publication number
JP2003517198A5
JP2003517198A5 JP2001545338A JP2001545338A JP2003517198A5 JP 2003517198 A5 JP2003517198 A5 JP 2003517198A5 JP 2001545338 A JP2001545338 A JP 2001545338A JP 2001545338 A JP2001545338 A JP 2001545338A JP 2003517198 A5 JP2003517198 A5 JP 2003517198A5
Authority
JP
Japan
Prior art keywords
surrounding member
plasma reactor
wafer support
chamber
chamber surrounding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001545338A
Other languages
English (en)
Japanese (ja)
Other versions
JP4649088B2 (ja
JP2003517198A (ja
Filing date
Publication date
Priority claimed from US09/461,682 external-priority patent/US6432259B1/en
Application filed filed Critical
Publication of JP2003517198A publication Critical patent/JP2003517198A/ja
Publication of JP2003517198A5 publication Critical patent/JP2003517198A5/ja
Application granted granted Critical
Publication of JP4649088B2 publication Critical patent/JP4649088B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2001545338A 1999-12-14 2000-12-11 断熱且つプラズマ加熱される小型ガス分配プレートアレイを備えたプラズマリアクター用冷却天井 Expired - Fee Related JP4649088B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/461,682 US6432259B1 (en) 1999-12-14 1999-12-14 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
US09/461,682 1999-12-14
PCT/US2000/042751 WO2001045135A2 (en) 1999-12-14 2000-12-11 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates

Publications (3)

Publication Number Publication Date
JP2003517198A JP2003517198A (ja) 2003-05-20
JP2003517198A5 true JP2003517198A5 (https=) 2008-02-07
JP4649088B2 JP4649088B2 (ja) 2011-03-09

Family

ID=23833530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001545338A Expired - Fee Related JP4649088B2 (ja) 1999-12-14 2000-12-11 断熱且つプラズマ加熱される小型ガス分配プレートアレイを備えたプラズマリアクター用冷却天井

Country Status (3)

Country Link
US (1) US6432259B1 (https=)
JP (1) JP4649088B2 (https=)
WO (1) WO2001045135A2 (https=)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020069970A1 (en) * 2000-03-07 2002-06-13 Applied Materials, Inc. Temperature controlled semiconductor processing chamber liner
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
WO2002061179A1 (en) * 2001-01-19 2002-08-08 Tokyo Electron Limited Method and apparatus for gas injection system with minimum particulate contamination
JP4720019B2 (ja) * 2001-05-18 2011-07-13 東京エレクトロン株式会社 冷却機構及び処理装置
US6626188B2 (en) * 2001-06-28 2003-09-30 International Business Machines Corporation Method for cleaning and preconditioning a chemical vapor deposition chamber dome
JP4666912B2 (ja) * 2001-08-06 2011-04-06 エー・エス・エムジニテックコリア株式会社 プラズマで補強した原子層蒸着装置及びこれを利用した薄膜形成方法
US6676760B2 (en) * 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
US6797108B2 (en) * 2001-10-05 2004-09-28 Applied Materials, Inc. Apparatus and method for evenly flowing processing gas onto a semiconductor wafer
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US6955725B2 (en) 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US6884296B2 (en) * 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
US7055212B2 (en) * 2002-10-24 2006-06-06 Texas Instruments Incorporated Clean gas injector system for reactor chamber
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US20040261712A1 (en) * 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
US7235138B2 (en) 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7344755B2 (en) 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7647886B2 (en) 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US6983892B2 (en) * 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
US7584942B2 (en) 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US20050220568A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for fastening components used in plasma processing
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US7296420B2 (en) * 2004-12-02 2007-11-20 Hitachi Global Storage Technologies Amsterdam, B.V. Direct cooling pallet tray for temperature stability for deep ion mill etch process
US7481312B2 (en) * 2004-12-02 2009-01-27 Hitachi Global Storage Technologies Netherlands B.V. Direct cooling pallet assembly for temperature stability for deep ion mill etch process
KR20060076714A (ko) * 2004-12-28 2006-07-04 에이에스엠지니텍코리아 주식회사 원자층 증착기
US7718030B2 (en) * 2005-09-23 2010-05-18 Tokyo Electron Limited Method and system for controlling radical distribution
US20070128862A1 (en) 2005-11-04 2007-06-07 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
US8097120B2 (en) * 2006-02-21 2012-01-17 Lam Research Corporation Process tuning gas injection from the substrate edge
US20070256637A1 (en) * 2006-04-28 2007-11-08 Applied Materials, Inc. Methods and apparatus for using a reinforced diffuser in substrate processing
US8444926B2 (en) * 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
EP1970468B1 (de) * 2007-03-05 2009-07-15 Applied Materials, Inc. Beschichtungsanlage und Gasleitungssystem
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
US20080241377A1 (en) * 2007-03-29 2008-10-02 Tokyo Electron Limited Vapor deposition system and method of operating
KR20090018290A (ko) * 2007-08-17 2009-02-20 에이에스엠지니텍코리아 주식회사 증착 장치
CN101802254B (zh) 2007-10-11 2013-11-27 瓦伦斯处理设备公司 化学气相沉积反应器
US20090226614A1 (en) * 2008-03-04 2009-09-10 Tokyo Electron Limited Porous gas heating device for a vapor deposition system
US8291856B2 (en) * 2008-03-07 2012-10-23 Tokyo Electron Limited Gas heating device for a vapor deposition system
US8382939B2 (en) * 2009-07-13 2013-02-26 Applied Materials, Inc. Plasma processing chamber with enhanced gas delivery
JP5336968B2 (ja) * 2009-07-30 2013-11-06 東京エレクトロン株式会社 プラズマ処理装置用電極及びプラズマ処理装置
US8272347B2 (en) * 2009-09-14 2012-09-25 Tokyo Electron Limited High temperature gas heating device for a vapor deposition system
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US8852347B2 (en) 2010-06-11 2014-10-07 Tokyo Electron Limited Apparatus for chemical vapor deposition control
US9139910B2 (en) 2010-06-11 2015-09-22 Tokyo Electron Limited Method for chemical vapor deposition control
US9657397B2 (en) * 2013-12-31 2017-05-23 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
US9597701B2 (en) * 2013-12-31 2017-03-21 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
KR20160021958A (ko) * 2014-08-18 2016-02-29 삼성전자주식회사 플라즈마 처리 장치 및 기판 처리 방법
JP6503730B2 (ja) * 2014-12-22 2019-04-24 東京エレクトロン株式会社 成膜装置
CN104607133A (zh) * 2015-01-22 2015-05-13 宜兴市阳洋塑料助剂有限公司 一种用于氨基甘油的水解反应装置
US10167552B2 (en) * 2015-02-05 2019-01-01 Lam Research Ag Spin chuck with rotating gas showerhead
WO2016200568A1 (en) * 2015-06-12 2016-12-15 Applied Materials, Inc. An injector for semiconductor epitaxy growth
US12281385B2 (en) * 2015-06-15 2025-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same
JP6922959B2 (ja) * 2019-09-20 2021-08-18 株式会社明電舎 酸化膜形成装置
KR102695926B1 (ko) * 2019-10-07 2024-08-16 삼성전자주식회사 가스 공급 유닛 및 이를 포함하는 기판 처리 장치
CN114623317B (zh) * 2020-12-11 2023-03-31 上海微电子装备（集团）股份有限公司 周期性结构、隔热装置和晶圆键合装置
USD1037778S1 (en) * 2022-07-19 2024-08-06 Applied Materials, Inc. Gas distribution plate
KR102895927B1 (ko) * 2022-09-20 2025-12-04 세메스 주식회사 기판 처리 장치
WO2025244740A1 (en) * 2024-05-22 2025-11-27 Lam Research Corporation An assembly for a semiconductor processing chamber with an aluminum nitride containing gasket

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01211921A (ja) * 1988-02-19 1989-08-25 Toshiba Corp ドライエッチング装置
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5423936A (en) 1992-10-19 1995-06-13 Hitachi, Ltd. Plasma etching system
JPH07230956A (ja) * 1994-02-18 1995-08-29 Kokusai Electric Co Ltd プラズマｃｖｄ装置
US5772771A (en) * 1995-12-13 1998-06-30 Applied Materials, Inc. Deposition chamber for improved deposition thickness uniformity
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US5906683A (en) * 1996-04-16 1999-05-25 Applied Materials, Inc. Lid assembly for semiconductor processing chamber
US6070551A (en) 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
TW343356B (en) * 1996-05-13 1998-10-21 Applied Materials Inc Deposition chamber and method for depositing low dielectric films
US6013155A (en) 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
JP3198956B2 (ja) * 1996-11-28 2001-08-13 日新電機株式会社 ＧａＮの薄膜気相成長方法と薄膜気相成長装置
US6158384A (en) * 1997-06-05 2000-12-12 Applied Materials, Inc. Plasma reactor with multiple small internal inductive antennas
US6071372A (en) 1997-06-05 2000-06-06 Applied Materials, Inc. RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6143078A (en) * 1998-11-13 2000-11-07 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
US6230651B1 (en) 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing

Similar Documents

Publication Publication Date Title
JP2003517198A5 (https=)
TWI246710B (en) Processing system and method for treating a substrate
WO2001045135A3 (en) Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
TWI262556B (en) Reactor assembly and processing method
US6537419B1 (en) Gas distribution plate assembly for providing laminar gas flow across the surface of a substrate
CN101916715B (zh) 用于前段工艺制造的原地干洗腔
TW200616139A (en) Method and apparatus for controlling temperature of a substrate
WO2002009171A1 (en) Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober
EP1235257A4 (en) Semiconductor-manufacturing apparatus
WO2003081646A3 (en) System and method for heating and cooling wafer at accelerated rates
WO2002071446A3 (en) Method and apparatus for active temperature control of susceptors
TW200847314A (en) Processing system and method for performing high throughput non-plasma processing
EP0852392A3 (en) Closed-loop dome thermal control apparatus for a semiconductor wafer processing system
MX9700586A (es) Reactor de plasma acoplado inductivamente y proceso para fabricar un dispositivo semiconductor.
AU2001253890A1 (en) Methods and apparatus for thermally processing wafers
DE60135672D1 (de) Elektrostatisch festgeklemmter randring für die plasmaverarbeitung
WO1997003236A3 (en) System and method for thermal processing of a semiconductor substrate
DE60045384D1 (de) Mehrzonenwiderstandsheizung
TW353196B (en) Substrate clamp for plasma processing device
TW200425240A (en) Processing system and method for thermally treating a substrate
WO2003060184A3 (en) Method and apparatus for forming silicon containing films
ATE356431T1 (de) Hochtemperatur elektrostatischer halter
WO2002056349A3 (en) Chamber for uniform substrate heating
WO2002093623A3 (en) Assembly comprising heat distributing plate and edge support
JP2000505152A (ja) 真空処理装置のための熱伝導性チャック