JP4649088B2 - 断熱且つプラズマ加熱される小型ガス分配プレートアレイを備えたプラズマリアクター用冷却天井 - Google Patents
断熱且つプラズマ加熱される小型ガス分配プレートアレイを備えたプラズマリアクター用冷却天井 Download PDFInfo
- Publication number
- JP4649088B2 JP4649088B2 JP2001545338A JP2001545338A JP4649088B2 JP 4649088 B2 JP4649088 B2 JP 4649088B2 JP 2001545338 A JP2001545338 A JP 2001545338A JP 2001545338 A JP2001545338 A JP 2001545338A JP 4649088 B2 JP4649088 B2 JP 4649088B2
- Authority
- JP
- Japan
- Prior art keywords
- gas distribution
- distribution plate
- plasma
- ceiling
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/461,682 US6432259B1 (en) | 1999-12-14 | 1999-12-14 | Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates |
| US09/461,682 | 1999-12-14 | ||
| PCT/US2000/042751 WO2001045135A2 (en) | 1999-12-14 | 2000-12-11 | Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003517198A JP2003517198A (ja) | 2003-05-20 |
| JP2003517198A5 JP2003517198A5 (https=) | 2008-02-07 |
| JP4649088B2 true JP4649088B2 (ja) | 2011-03-09 |
Family
ID=23833530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001545338A Expired - Fee Related JP4649088B2 (ja) | 1999-12-14 | 2000-12-11 | 断熱且つプラズマ加熱される小型ガス分配プレートアレイを備えたプラズマリアクター用冷却天井 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6432259B1 (https=) |
| JP (1) | JP4649088B2 (https=) |
| WO (1) | WO2001045135A2 (https=) |
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| US7235138B2 (en) | 2003-08-21 | 2007-06-26 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces |
| US7344755B2 (en) | 2003-08-21 | 2008-03-18 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers |
| US7422635B2 (en) | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
| US7056806B2 (en) | 2003-09-17 | 2006-06-06 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
| US7282239B2 (en) | 2003-09-18 | 2007-10-16 | Micron Technology, Inc. | Systems and methods for depositing material onto microfeature workpieces in reaction chambers |
| US7323231B2 (en) | 2003-10-09 | 2008-01-29 | Micron Technology, Inc. | Apparatus and methods for plasma vapor deposition processes |
| US7581511B2 (en) | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
| US7647886B2 (en) | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
| US7258892B2 (en) | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
| US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
| US6983892B2 (en) * | 2004-02-05 | 2006-01-10 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
| US7584942B2 (en) | 2004-03-31 | 2009-09-08 | Micron Technology, Inc. | Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers |
| US20050220568A1 (en) * | 2004-03-31 | 2005-10-06 | Tokyo Electron Limited | Method and system for fastening components used in plasma processing |
| US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
| US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
| US7296420B2 (en) * | 2004-12-02 | 2007-11-20 | Hitachi Global Storage Technologies Amsterdam, B.V. | Direct cooling pallet tray for temperature stability for deep ion mill etch process |
| US7481312B2 (en) * | 2004-12-02 | 2009-01-27 | Hitachi Global Storage Technologies Netherlands B.V. | Direct cooling pallet assembly for temperature stability for deep ion mill etch process |
| KR20060076714A (ko) * | 2004-12-28 | 2006-07-04 | 에이에스엠지니텍코리아 주식회사 | 원자층 증착기 |
| US7718030B2 (en) * | 2005-09-23 | 2010-05-18 | Tokyo Electron Limited | Method and system for controlling radical distribution |
| US20070128862A1 (en) | 2005-11-04 | 2007-06-07 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
| US8097120B2 (en) * | 2006-02-21 | 2012-01-17 | Lam Research Corporation | Process tuning gas injection from the substrate edge |
| US20070256637A1 (en) * | 2006-04-28 | 2007-11-08 | Applied Materials, Inc. | Methods and apparatus for using a reinforced diffuser in substrate processing |
| US8444926B2 (en) * | 2007-01-30 | 2013-05-21 | Applied Materials, Inc. | Processing chamber with heated chamber liner |
| EP1970468B1 (de) * | 2007-03-05 | 2009-07-15 | Applied Materials, Inc. | Beschichtungsanlage und Gasleitungssystem |
| US9157152B2 (en) * | 2007-03-29 | 2015-10-13 | Tokyo Electron Limited | Vapor deposition system |
| US20080241377A1 (en) * | 2007-03-29 | 2008-10-02 | Tokyo Electron Limited | Vapor deposition system and method of operating |
| KR20090018290A (ko) * | 2007-08-17 | 2009-02-20 | 에이에스엠지니텍코리아 주식회사 | 증착 장치 |
| CN101802254B (zh) | 2007-10-11 | 2013-11-27 | 瓦伦斯处理设备公司 | 化学气相沉积反应器 |
| US20090226614A1 (en) * | 2008-03-04 | 2009-09-10 | Tokyo Electron Limited | Porous gas heating device for a vapor deposition system |
| US8291856B2 (en) * | 2008-03-07 | 2012-10-23 | Tokyo Electron Limited | Gas heating device for a vapor deposition system |
| US8382939B2 (en) * | 2009-07-13 | 2013-02-26 | Applied Materials, Inc. | Plasma processing chamber with enhanced gas delivery |
| JP5336968B2 (ja) * | 2009-07-30 | 2013-11-06 | 東京エレクトロン株式会社 | プラズマ処理装置用電極及びプラズマ処理装置 |
| US8272347B2 (en) * | 2009-09-14 | 2012-09-25 | Tokyo Electron Limited | High temperature gas heating device for a vapor deposition system |
| US20110256692A1 (en) * | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor concentric delivery showerhead |
| US8852347B2 (en) | 2010-06-11 | 2014-10-07 | Tokyo Electron Limited | Apparatus for chemical vapor deposition control |
| US9139910B2 (en) | 2010-06-11 | 2015-09-22 | Tokyo Electron Limited | Method for chemical vapor deposition control |
| US9657397B2 (en) * | 2013-12-31 | 2017-05-23 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
| US9597701B2 (en) * | 2013-12-31 | 2017-03-21 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
| KR20160021958A (ko) * | 2014-08-18 | 2016-02-29 | 삼성전자주식회사 | 플라즈마 처리 장치 및 기판 처리 방법 |
| JP6503730B2 (ja) * | 2014-12-22 | 2019-04-24 | 東京エレクトロン株式会社 | 成膜装置 |
| CN104607133A (zh) * | 2015-01-22 | 2015-05-13 | 宜兴市阳洋塑料助剂有限公司 | 一种用于氨基甘油的水解反应装置 |
| US10167552B2 (en) * | 2015-02-05 | 2019-01-01 | Lam Research Ag | Spin chuck with rotating gas showerhead |
| WO2016200568A1 (en) * | 2015-06-12 | 2016-12-15 | Applied Materials, Inc. | An injector for semiconductor epitaxy growth |
| US12281385B2 (en) * | 2015-06-15 | 2025-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas dispenser and deposition apparatus using the same |
| JP6922959B2 (ja) * | 2019-09-20 | 2021-08-18 | 株式会社明電舎 | 酸化膜形成装置 |
| KR102695926B1 (ko) * | 2019-10-07 | 2024-08-16 | 삼성전자주식회사 | 가스 공급 유닛 및 이를 포함하는 기판 처리 장치 |
| CN114623317B (zh) * | 2020-12-11 | 2023-03-31 | 上海微电子装备(集团)股份有限公司 | 周期性结构、隔热装置和晶圆键合装置 |
| USD1037778S1 (en) * | 2022-07-19 | 2024-08-06 | Applied Materials, Inc. | Gas distribution plate |
| KR102895927B1 (ko) * | 2022-09-20 | 2025-12-04 | 세메스 주식회사 | 기판 처리 장치 |
| WO2025244740A1 (en) * | 2024-05-22 | 2025-11-27 | Lam Research Corporation | An assembly for a semiconductor processing chamber with an aluminum nitride containing gasket |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01211921A (ja) * | 1988-02-19 | 1989-08-25 | Toshiba Corp | ドライエッチング装置 |
| US6036877A (en) | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US5423936A (en) | 1992-10-19 | 1995-06-13 | Hitachi, Ltd. | Plasma etching system |
| JPH07230956A (ja) * | 1994-02-18 | 1995-08-29 | Kokusai Electric Co Ltd | プラズマcvd装置 |
| US5772771A (en) * | 1995-12-13 | 1998-06-30 | Applied Materials, Inc. | Deposition chamber for improved deposition thickness uniformity |
| US6054013A (en) | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
| US5906683A (en) * | 1996-04-16 | 1999-05-25 | Applied Materials, Inc. | Lid assembly for semiconductor processing chamber |
| US6070551A (en) | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
| TW343356B (en) * | 1996-05-13 | 1998-10-21 | Applied Materials Inc | Deposition chamber and method for depositing low dielectric films |
| US6013155A (en) | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
| JP3198956B2 (ja) * | 1996-11-28 | 2001-08-13 | 日新電機株式会社 | GaNの薄膜気相成長方法と薄膜気相成長装置 |
| US6158384A (en) * | 1997-06-05 | 2000-12-12 | Applied Materials, Inc. | Plasma reactor with multiple small internal inductive antennas |
| US6071372A (en) | 1997-06-05 | 2000-06-06 | Applied Materials, Inc. | RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls |
| US5997649A (en) * | 1998-04-09 | 1999-12-07 | Tokyo Electron Limited | Stacked showerhead assembly for delivering gases and RF power to a reaction chamber |
| US6143078A (en) * | 1998-11-13 | 2000-11-07 | Applied Materials, Inc. | Gas distribution system for a CVD processing chamber |
| US6230651B1 (en) | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
-
1999
- 1999-12-14 US US09/461,682 patent/US6432259B1/en not_active Expired - Lifetime
-
2000
- 2000-12-11 WO PCT/US2000/042751 patent/WO2001045135A2/en not_active Ceased
- 2000-12-11 JP JP2001545338A patent/JP4649088B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6432259B1 (en) | 2002-08-13 |
| WO2001045135A3 (en) | 2002-03-14 |
| WO2001045135A9 (en) | 2002-08-15 |
| WO2001045135A2 (en) | 2001-06-21 |
| JP2003517198A (ja) | 2003-05-20 |
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