TW523751B - Nonvolatile semiconductor memory and automatic erasing/writing method thereof - Google Patents

Nonvolatile semiconductor memory and automatic erasing/writing method thereof Download PDF

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Publication number
TW523751B
TW523751B TW090119860A TW90119860A TW523751B TW 523751 B TW523751 B TW 523751B TW 090119860 A TW090119860 A TW 090119860A TW 90119860 A TW90119860 A TW 90119860A TW 523751 B TW523751 B TW 523751B
Authority
TW
Taiwan
Prior art keywords
memory
register
signal
data
volatile
Prior art date
Application number
TW090119860A
Other languages
English (en)
Chinese (zh)
Inventor
Kunio Tani
Tomohisa Iba
Tetsu Tashiro
Katsunobu Hongo
Tsutomu Tanaka
Original Assignee
Mitsubishi Electric Corp
Mitsubishi Electric Eng
Mitsubishi Elec Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Mitsubishi Electric Eng, Mitsubishi Elec Semiconductor filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW523751B publication Critical patent/TW523751B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW090119860A 2001-02-01 2001-08-14 Nonvolatile semiconductor memory and automatic erasing/writing method thereof TW523751B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001026030A JP4671512B2 (ja) 2001-02-01 2001-02-01 不揮発性半導体メモリ

Publications (1)

Publication Number Publication Date
TW523751B true TW523751B (en) 2003-03-11

Family

ID=18890922

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090119860A TW523751B (en) 2001-02-01 2001-08-14 Nonvolatile semiconductor memory and automatic erasing/writing method thereof

Country Status (4)

Country Link
US (1) US6459640B1 (enExample)
JP (1) JP4671512B2 (enExample)
KR (1) KR100464523B1 (enExample)
TW (1) TW523751B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7984111B2 (en) * 2002-09-12 2011-07-19 Broadcom Corporation Software applications incorporating functionalities based on data-type and access
US7016245B2 (en) * 2004-02-02 2006-03-21 Texas Instruments Incorporated Tracking circuit enabling quick/accurate retrieval of data stored in a memory array
US7310282B2 (en) * 2005-12-30 2007-12-18 Lexmark International, Inc. Distributed programmed memory cell overwrite protection
KR100757411B1 (ko) * 2006-02-03 2007-09-11 삼성전자주식회사 옵션 퓨즈 회로를 이용한 반도체 메모리 장치의 전압재설정 회로 및 그 방법
US7487287B2 (en) * 2006-02-08 2009-02-03 Atmel Corporation Time efficient embedded EEPROM/processor control method
CA2645781C (en) * 2006-12-22 2011-04-12 Sidense Corp. Dual function data register
JP2008181614A (ja) * 2007-01-25 2008-08-07 Toshiba Corp 半導体記憶装置
US7969804B1 (en) * 2008-09-22 2011-06-28 Cypress Semiconductor Corporation Memory architecture having a reference current generator that provides two reference currents
WO2014033851A1 (ja) * 2012-08-29 2014-03-06 ルネサスエレクトロニクス株式会社 半導体装置
US10175271B2 (en) * 2012-12-31 2019-01-08 Silicon Laboratories Inc. Apparatus for differencing comparator and associated methods

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9001333A (nl) * 1990-06-13 1992-01-02 Philips Nv Werkwijze voor het besturen van een zelftest in een dataverwerkend systeem en dataverwerkend systeem geschikt voor deze werkwijze.
US5199032A (en) * 1990-09-04 1993-03-30 Motorola, Inc. Microcontroller having an EPROM with a low voltage program inhibit circuit
US5267218A (en) * 1992-03-31 1993-11-30 Intel Corporation Nonvolatile memory card with a single power supply input
US5339279A (en) * 1993-05-07 1994-08-16 Motorola, Inc. Block erasable flash EEPROM apparatus and method thereof
JPH0729386A (ja) * 1993-07-13 1995-01-31 Hitachi Ltd フラッシュメモリ及びマイクロコンピュータ
JP2812154B2 (ja) * 1993-07-27 1998-10-22 日本電気株式会社 半導体記憶装置
US5890191A (en) * 1996-05-10 1999-03-30 Motorola, Inc. Method and apparatus for providing erasing and programming protection for electrically erasable programmable read only memory
US5719880A (en) * 1996-09-20 1998-02-17 Texas Instruments Incorporated, A Delaware Corporation On-chip operation for memories
US6292868B1 (en) * 1996-10-15 2001-09-18 Micron Technology, Inc. System and method for encoding data to reduce power and time required to write the encoded data to a flash memory
TW389910B (en) 1997-07-03 2000-05-11 Seiko Epson Corp Programmable nonvolatile memory apparatus and microcomputer using the same
JP4039532B2 (ja) * 1997-10-02 2008-01-30 株式会社ルネサステクノロジ 半導体集積回路装置
JP3202673B2 (ja) * 1998-01-26 2001-08-27 株式会社東芝 不揮発性半導体メモリ装置
JPH11328980A (ja) 1998-05-19 1999-11-30 Hitachi Ltd 不揮発性半導体メモリ
JP2000123584A (ja) * 1998-10-19 2000-04-28 Hitachi Ltd 不揮発性半導体メモリおよびそれを内蔵した半導体集積回路
JP2001052495A (ja) * 1999-06-03 2001-02-23 Toshiba Corp 半導体メモリ
JP2001028191A (ja) * 1999-07-12 2001-01-30 Mitsubishi Electric Corp 不揮発性半導体メモリの自動消去方法

Also Published As

Publication number Publication date
KR20020064137A (ko) 2002-08-07
JP2002230983A (ja) 2002-08-16
US6459640B1 (en) 2002-10-01
US20020101764A1 (en) 2002-08-01
KR100464523B1 (ko) 2005-01-03
JP4671512B2 (ja) 2011-04-20

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MM4A Annulment or lapse of patent due to non-payment of fees