JP4671512B2 - 不揮発性半導体メモリ - Google Patents

不揮発性半導体メモリ Download PDF

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Publication number
JP4671512B2
JP4671512B2 JP2001026030A JP2001026030A JP4671512B2 JP 4671512 B2 JP4671512 B2 JP 4671512B2 JP 2001026030 A JP2001026030 A JP 2001026030A JP 2001026030 A JP2001026030 A JP 2001026030A JP 4671512 B2 JP4671512 B2 JP 4671512B2
Authority
JP
Japan
Prior art keywords
signal
register
memory
timing
memory array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001026030A
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English (en)
Japanese (ja)
Other versions
JP2002230983A5 (enExample
JP2002230983A (ja
Inventor
国雄 谷
智久 伊庭
哲 田代
勝信 本郷
努 田中
幹郎 神谷
利博 瀬崎
宏行 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2001026030A priority Critical patent/JP4671512B2/ja
Priority to TW090119860A priority patent/TW523751B/zh
Priority to US09/931,243 priority patent/US6459640B1/en
Priority to KR10-2001-0069567A priority patent/KR100464523B1/ko
Publication of JP2002230983A publication Critical patent/JP2002230983A/ja
Publication of JP2002230983A5 publication Critical patent/JP2002230983A5/ja
Application granted granted Critical
Publication of JP4671512B2 publication Critical patent/JP4671512B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2001026030A 2001-02-01 2001-02-01 不揮発性半導体メモリ Expired - Fee Related JP4671512B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001026030A JP4671512B2 (ja) 2001-02-01 2001-02-01 不揮発性半導体メモリ
TW090119860A TW523751B (en) 2001-02-01 2001-08-14 Nonvolatile semiconductor memory and automatic erasing/writing method thereof
US09/931,243 US6459640B1 (en) 2001-02-01 2001-08-17 Nonvolatile semiconductor memory and automatic erasing/writing method thereof
KR10-2001-0069567A KR100464523B1 (ko) 2001-02-01 2001-11-08 비휘발성 반도체 메모리 및 그 자동 소거/기입 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001026030A JP4671512B2 (ja) 2001-02-01 2001-02-01 不揮発性半導体メモリ

Publications (3)

Publication Number Publication Date
JP2002230983A JP2002230983A (ja) 2002-08-16
JP2002230983A5 JP2002230983A5 (enExample) 2008-01-17
JP4671512B2 true JP4671512B2 (ja) 2011-04-20

Family

ID=18890922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001026030A Expired - Fee Related JP4671512B2 (ja) 2001-02-01 2001-02-01 不揮発性半導体メモリ

Country Status (4)

Country Link
US (1) US6459640B1 (enExample)
JP (1) JP4671512B2 (enExample)
KR (1) KR100464523B1 (enExample)
TW (1) TW523751B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7984111B2 (en) * 2002-09-12 2011-07-19 Broadcom Corporation Software applications incorporating functionalities based on data-type and access
US7016245B2 (en) * 2004-02-02 2006-03-21 Texas Instruments Incorporated Tracking circuit enabling quick/accurate retrieval of data stored in a memory array
US7310282B2 (en) * 2005-12-30 2007-12-18 Lexmark International, Inc. Distributed programmed memory cell overwrite protection
KR100757411B1 (ko) * 2006-02-03 2007-09-11 삼성전자주식회사 옵션 퓨즈 회로를 이용한 반도체 메모리 장치의 전압재설정 회로 및 그 방법
US7487287B2 (en) * 2006-02-08 2009-02-03 Atmel Corporation Time efficient embedded EEPROM/processor control method
US8023338B2 (en) 2006-12-22 2011-09-20 Sidense Corp. Dual function data register
JP2008181614A (ja) * 2007-01-25 2008-08-07 Toshiba Corp 半導体記憶装置
US8125835B2 (en) * 2008-09-22 2012-02-28 Cypress Semiconductor Corporation Memory architecture having two independently controlled voltage pumps
CN104380386A (zh) * 2012-08-29 2015-02-25 瑞萨电子株式会社 半导体器件
US10175271B2 (en) * 2012-12-31 2019-01-08 Silicon Laboratories Inc. Apparatus for differencing comparator and associated methods

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9001333A (nl) * 1990-06-13 1992-01-02 Philips Nv Werkwijze voor het besturen van een zelftest in een dataverwerkend systeem en dataverwerkend systeem geschikt voor deze werkwijze.
US5199032A (en) * 1990-09-04 1993-03-30 Motorola, Inc. Microcontroller having an EPROM with a low voltage program inhibit circuit
US5267218A (en) * 1992-03-31 1993-11-30 Intel Corporation Nonvolatile memory card with a single power supply input
US5339279A (en) * 1993-05-07 1994-08-16 Motorola, Inc. Block erasable flash EEPROM apparatus and method thereof
JPH0729386A (ja) * 1993-07-13 1995-01-31 Hitachi Ltd フラッシュメモリ及びマイクロコンピュータ
JP2812154B2 (ja) * 1993-07-27 1998-10-22 日本電気株式会社 半導体記憶装置
US5890191A (en) * 1996-05-10 1999-03-30 Motorola, Inc. Method and apparatus for providing erasing and programming protection for electrically erasable programmable read only memory
US5719880A (en) * 1996-09-20 1998-02-17 Texas Instruments Incorporated, A Delaware Corporation On-chip operation for memories
US6292868B1 (en) * 1996-10-15 2001-09-18 Micron Technology, Inc. System and method for encoding data to reduce power and time required to write the encoded data to a flash memory
TW389910B (en) 1997-07-03 2000-05-11 Seiko Epson Corp Programmable nonvolatile memory apparatus and microcomputer using the same
JP4039532B2 (ja) * 1997-10-02 2008-01-30 株式会社ルネサステクノロジ 半導体集積回路装置
JP3202673B2 (ja) * 1998-01-26 2001-08-27 株式会社東芝 不揮発性半導体メモリ装置
JPH11328980A (ja) 1998-05-19 1999-11-30 Hitachi Ltd 不揮発性半導体メモリ
JP2000123584A (ja) * 1998-10-19 2000-04-28 Hitachi Ltd 不揮発性半導体メモリおよびそれを内蔵した半導体集積回路
JP2001052495A (ja) * 1999-06-03 2001-02-23 Toshiba Corp 半導体メモリ
JP2001028191A (ja) * 1999-07-12 2001-01-30 Mitsubishi Electric Corp 不揮発性半導体メモリの自動消去方法

Also Published As

Publication number Publication date
TW523751B (en) 2003-03-11
US20020101764A1 (en) 2002-08-01
US6459640B1 (en) 2002-10-01
KR100464523B1 (ko) 2005-01-03
KR20020064137A (ko) 2002-08-07
JP2002230983A (ja) 2002-08-16

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