KR100464523B1 - 비휘발성 반도체 메모리 및 그 자동 소거/기입 방법 - Google Patents

비휘발성 반도체 메모리 및 그 자동 소거/기입 방법 Download PDF

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Publication number
KR100464523B1
KR100464523B1 KR10-2001-0069567A KR20010069567A KR100464523B1 KR 100464523 B1 KR100464523 B1 KR 100464523B1 KR 20010069567 A KR20010069567 A KR 20010069567A KR 100464523 B1 KR100464523 B1 KR 100464523B1
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KR
South Korea
Prior art keywords
register
memory
signal
decoder
data
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-0069567A
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English (en)
Korean (ko)
Other versions
KR20020064137A (ko
Inventor
다니구니오
이바도모히사
다시로데츠
혼고가츠노부
다나카츠토무
가미야미키오
세자키도시히로
기무라히로유키
Original Assignee
미쓰비시 덴끼 엔지니어링 가부시키가이샤
미쓰비시덴키 가부시키가이샤
미쓰비시 덴키 세미콘다쿠타 아프리케숀 엔지니아링구 가부시키가이샤
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Publication date
Application filed by 미쓰비시 덴끼 엔지니어링 가부시키가이샤, 미쓰비시덴키 가부시키가이샤, 미쓰비시 덴키 세미콘다쿠타 아프리케숀 엔지니아링구 가부시키가이샤 filed Critical 미쓰비시 덴끼 엔지니어링 가부시키가이샤
Publication of KR20020064137A publication Critical patent/KR20020064137A/ko
Application granted granted Critical
Publication of KR100464523B1 publication Critical patent/KR100464523B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR10-2001-0069567A 2001-02-01 2001-11-08 비휘발성 반도체 메모리 및 그 자동 소거/기입 방법 Expired - Fee Related KR100464523B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001026030A JP4671512B2 (ja) 2001-02-01 2001-02-01 不揮発性半導体メモリ
JPJP-P-2001-00026030 2001-02-01

Publications (2)

Publication Number Publication Date
KR20020064137A KR20020064137A (ko) 2002-08-07
KR100464523B1 true KR100464523B1 (ko) 2005-01-03

Family

ID=18890922

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0069567A Expired - Fee Related KR100464523B1 (ko) 2001-02-01 2001-11-08 비휘발성 반도체 메모리 및 그 자동 소거/기입 방법

Country Status (4)

Country Link
US (1) US6459640B1 (enExample)
JP (1) JP4671512B2 (enExample)
KR (1) KR100464523B1 (enExample)
TW (1) TW523751B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7984111B2 (en) * 2002-09-12 2011-07-19 Broadcom Corporation Software applications incorporating functionalities based on data-type and access
US7016245B2 (en) * 2004-02-02 2006-03-21 Texas Instruments Incorporated Tracking circuit enabling quick/accurate retrieval of data stored in a memory array
US7310282B2 (en) * 2005-12-30 2007-12-18 Lexmark International, Inc. Distributed programmed memory cell overwrite protection
KR100757411B1 (ko) * 2006-02-03 2007-09-11 삼성전자주식회사 옵션 퓨즈 회로를 이용한 반도체 메모리 장치의 전압재설정 회로 및 그 방법
US7487287B2 (en) * 2006-02-08 2009-02-03 Atmel Corporation Time efficient embedded EEPROM/processor control method
EP2814037B1 (en) * 2006-12-22 2016-10-26 Sidense Corp. Power up test system for a memory device
JP2008181614A (ja) * 2007-01-25 2008-08-07 Toshiba Corp 半導体記憶装置
US7969804B1 (en) * 2008-09-22 2011-06-28 Cypress Semiconductor Corporation Memory architecture having a reference current generator that provides two reference currents
EP2892054B1 (en) * 2012-08-29 2019-08-07 Renesas Electronics Corporation Semiconductor device
US10175271B2 (en) * 2012-12-31 2019-01-08 Silicon Laboratories Inc. Apparatus for differencing comparator and associated methods

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5199032A (en) * 1990-09-04 1993-03-30 Motorola, Inc. Microcontroller having an EPROM with a low voltage program inhibit circuit
JPH0745065A (ja) * 1993-07-27 1995-02-14 Nec Corp 半導体記憶装置
US5428625A (en) * 1990-06-13 1995-06-27 U.S. Philips Corporation Method of controlling a self-test in a data processing system and data processing system suitable for this method
JPH10172292A (ja) * 1998-01-26 1998-06-26 Toshiba Corp 不揮発性半導体メモリ装置
KR19980024750A (ko) * 1996-09-20 1998-07-06 윌리엄 비. 켐플러 메모리의 개선된 온-칩 동작
US5890191A (en) * 1996-05-10 1999-03-30 Motorola, Inc. Method and apparatus for providing erasing and programming protection for electrically erasable programmable read only memory

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5267218A (en) * 1992-03-31 1993-11-30 Intel Corporation Nonvolatile memory card with a single power supply input
US5339279A (en) * 1993-05-07 1994-08-16 Motorola, Inc. Block erasable flash EEPROM apparatus and method thereof
JPH0729386A (ja) * 1993-07-13 1995-01-31 Hitachi Ltd フラッシュメモリ及びマイクロコンピュータ
US6292868B1 (en) * 1996-10-15 2001-09-18 Micron Technology, Inc. System and method for encoding data to reduce power and time required to write the encoded data to a flash memory
TW389910B (en) 1997-07-03 2000-05-11 Seiko Epson Corp Programmable nonvolatile memory apparatus and microcomputer using the same
JP4039532B2 (ja) * 1997-10-02 2008-01-30 株式会社ルネサステクノロジ 半導体集積回路装置
JPH11328980A (ja) 1998-05-19 1999-11-30 Hitachi Ltd 不揮発性半導体メモリ
JP2000123584A (ja) * 1998-10-19 2000-04-28 Hitachi Ltd 不揮発性半導体メモリおよびそれを内蔵した半導体集積回路
JP2001052495A (ja) * 1999-06-03 2001-02-23 Toshiba Corp 半導体メモリ
JP2001028191A (ja) * 1999-07-12 2001-01-30 Mitsubishi Electric Corp 不揮発性半導体メモリの自動消去方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5428625A (en) * 1990-06-13 1995-06-27 U.S. Philips Corporation Method of controlling a self-test in a data processing system and data processing system suitable for this method
US5199032A (en) * 1990-09-04 1993-03-30 Motorola, Inc. Microcontroller having an EPROM with a low voltage program inhibit circuit
JPH0745065A (ja) * 1993-07-27 1995-02-14 Nec Corp 半導体記憶装置
US5890191A (en) * 1996-05-10 1999-03-30 Motorola, Inc. Method and apparatus for providing erasing and programming protection for electrically erasable programmable read only memory
KR19980024750A (ko) * 1996-09-20 1998-07-06 윌리엄 비. 켐플러 메모리의 개선된 온-칩 동작
JPH10172292A (ja) * 1998-01-26 1998-06-26 Toshiba Corp 不揮発性半導体メモリ装置

Also Published As

Publication number Publication date
US6459640B1 (en) 2002-10-01
TW523751B (en) 2003-03-11
KR20020064137A (ko) 2002-08-07
JP2002230983A (ja) 2002-08-16
JP4671512B2 (ja) 2011-04-20
US20020101764A1 (en) 2002-08-01

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