TW516268B - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- TW516268B TW516268B TW090110764A TW90110764A TW516268B TW 516268 B TW516268 B TW 516268B TW 090110764 A TW090110764 A TW 090110764A TW 90110764 A TW90110764 A TW 90110764A TW 516268 B TW516268 B TW 516268B
- Authority
- TW
- Taiwan
- Prior art keywords
- amplifier
- semiconductor device
- unit
- patent application
- pins
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
- H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/26—Circuits for superheterodyne receivers
- H04B1/28—Circuits for superheterodyne receivers the receiver comprising at least one semiconductor device having three or more electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
- H10W44/203—Electrical connections
- H10W44/206—Wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
- H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Lead Frames For Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000265982A JP4319339B2 (ja) | 2000-08-30 | 2000-08-30 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW516268B true TW516268B (en) | 2003-01-01 |
Family
ID=18753157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090110764A TW516268B (en) | 2000-08-30 | 2001-05-04 | Semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6624509B2 (https=) |
| EP (1) | EP1187208A3 (https=) |
| JP (1) | JP4319339B2 (https=) |
| KR (1) | KR100750449B1 (https=) |
| CN (1) | CN1227733C (https=) |
| TW (1) | TW516268B (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002076267A (ja) * | 2000-08-22 | 2002-03-15 | Hitachi Ltd | 無線送受信装置 |
| US20020127985A1 (en) * | 2001-03-08 | 2002-09-12 | Fransis Bert L. | Wideband local oscillator architecture |
| US20020127992A1 (en) * | 2001-03-08 | 2002-09-12 | Fransis Bert L. | Wideband local oscillator architecture |
| US6751470B1 (en) * | 2002-04-08 | 2004-06-15 | Nokia Corporation | Versatile RF front-end multiband mobile terminals |
| KR100993579B1 (ko) | 2002-04-30 | 2010-11-10 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체장치 및 전자 장치 |
| KR100993277B1 (ko) | 2002-04-30 | 2010-11-10 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체장치 및 전자 장치 |
| WO2003094236A1 (fr) * | 2002-04-30 | 2003-11-13 | Renesas Technology Corp. | Dispositif a semi-conducteur et appareil de radiocommunication |
| AU2003234812A1 (en) * | 2002-06-05 | 2003-12-22 | Hitachi Ulsi Systems Co., Ltd. | Semiconductor device |
| KR100499788B1 (ko) * | 2002-11-27 | 2005-07-07 | 인티그런트 테크놀로지즈(주) | 집적회로 칩 |
| WO2004073063A1 (ja) * | 2003-02-14 | 2004-08-26 | Renesas Technology Corp. | 電子装置および半導体装置 |
| TWI225332B (en) * | 2003-05-20 | 2004-12-11 | Mediatek Inc | Multi-band low noise amplifier |
| JP2005006031A (ja) * | 2003-06-11 | 2005-01-06 | Sony Corp | 増幅器および受信回路 |
| KR101014708B1 (ko) * | 2003-08-27 | 2011-02-16 | 엘지전자 주식회사 | 드럼세탁기의 로터리 놉 어셈블리 구조 |
| JP4418250B2 (ja) * | 2004-02-05 | 2010-02-17 | 株式会社ルネサステクノロジ | 高周波回路モジュール |
| JP2006073821A (ja) * | 2004-09-02 | 2006-03-16 | Sharp Corp | 半導体集積回路装置 |
| JP2008218776A (ja) * | 2007-03-06 | 2008-09-18 | Renesas Technology Corp | 半導体装置 |
| US8085596B2 (en) * | 2007-09-11 | 2011-12-27 | Micron Technology, Inc. | Reducing noise in semiconductor devices |
| JP5588147B2 (ja) * | 2009-10-26 | 2014-09-10 | キヤノン株式会社 | 半導体装置及び半導体装置を搭載したプリント基板 |
| JP5499696B2 (ja) | 2009-12-25 | 2014-05-21 | 富士通セミコンダクター株式会社 | 半導体装置及び実装構造 |
| CN107636957A (zh) * | 2015-05-20 | 2018-01-26 | 怀斯迪斯匹有限公司 | 超低功率和低噪声放大器 |
| CN106936431B (zh) * | 2015-12-30 | 2021-07-20 | 上海贝岭股份有限公司 | 一种高性能低噪音芯片及其制造方法 |
| IT201600086488A1 (it) * | 2016-08-22 | 2018-02-22 | St Microelectronics Srl | Dispositivo a semiconduttore e corrispondente procedimento |
| US10880991B2 (en) * | 2018-04-04 | 2020-12-29 | Marvell Asia Pte, Ltd. | Apparatus and methods for enhancing signaling bandwidth in an integrated circuit package |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2716005B2 (ja) * | 1995-07-04 | 1998-02-18 | 日本電気株式会社 | ワイヤボンド型半導体装置 |
| KR0156334B1 (ko) * | 1995-10-14 | 1998-10-15 | 김광호 | 차폐 본딩 와이어를 구비하는 고주파, 고밀도용 반도체 칩 패키지 |
| JPH1075132A (ja) * | 1996-08-29 | 1998-03-17 | Mitsumi Electric Co Ltd | 差動増幅装置 |
| US5789799A (en) * | 1996-09-27 | 1998-08-04 | Northern Telecom Limited | High frequency noise and impedance matched integrated circuits |
| JP3920427B2 (ja) * | 1997-11-19 | 2007-05-30 | 富士通株式会社 | 差動増幅回路及びオペアンプ回路 |
| WO1999027646A1 (fr) * | 1997-11-21 | 1999-06-03 | Hitachi, Ltd. | Dispositif a circuit amplificateur a haute frequence et systeme de transmission a haute frequence comprenant ce dispositif |
| JPH11163644A (ja) * | 1997-11-26 | 1999-06-18 | Fujitsu Ltd | 差動増幅回路の出力回路 |
| US6094084A (en) * | 1998-09-04 | 2000-07-25 | Nortel Networks Corporation | Narrowband LC folded cascode structure |
| JP2000299438A (ja) * | 1999-04-15 | 2000-10-24 | Hitachi Ltd | 半導体集積回路 |
| JP4018312B2 (ja) * | 2000-02-21 | 2007-12-05 | 株式会社ルネサステクノロジ | 無線通信装置 |
-
2000
- 2000-08-30 JP JP2000265982A patent/JP4319339B2/ja not_active Expired - Fee Related
-
2001
- 2001-05-04 TW TW090110764A patent/TW516268B/zh not_active IP Right Cessation
- 2001-07-25 US US09/911,796 patent/US6624509B2/en not_active Expired - Lifetime
- 2001-08-03 EP EP01118714A patent/EP1187208A3/en not_active Withdrawn
- 2001-08-29 CN CNB011258381A patent/CN1227733C/zh not_active Expired - Fee Related
- 2001-08-30 KR KR1020010052874A patent/KR100750449B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1340858A (zh) | 2002-03-20 |
| EP1187208A2 (en) | 2002-03-13 |
| JP2002076235A (ja) | 2002-03-15 |
| US6624509B2 (en) | 2003-09-23 |
| KR100750449B1 (ko) | 2007-08-22 |
| EP1187208A3 (en) | 2011-09-07 |
| JP4319339B2 (ja) | 2009-08-26 |
| CN1227733C (zh) | 2005-11-16 |
| US20020053729A1 (en) | 2002-05-09 |
| KR20020018146A (ko) | 2002-03-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW516268B (en) | Semiconductor device | |
| TW472382B (en) | Semiconductor integrated circuit | |
| JP3932259B2 (ja) | 高周波電力増幅回路および無線通信用電子部品 | |
| TWI378638B (en) | Amplifier, attenuating module and method for attenuating an rf signal | |
| JP3735270B2 (ja) | 高周波半導体装置 | |
| AU665718B2 (en) | Interconnection structure for crosstalk reduction to improve off-chip selectivity | |
| TW322657B (https=) | ||
| JP2007096585A (ja) | 高周波電力増幅用電子部品 | |
| US6169461B1 (en) | High-frequency oscillating circuit | |
| CN115989633B (zh) | 功率放大电路 | |
| TW511137B (en) | Semiconductor device | |
| JP2005072031A (ja) | 高周波用半導体装置および通信用電子部品並びに無線通信システム | |
| CN211791450U (zh) | 一种功率放大器及功率放大器系统 | |
| CN111010093A (zh) | 一种集成Doherty放大器及其合路器 | |
| KR20020020801A (ko) | Rf 회로 | |
| CN102299686B (zh) | 电感电路装置 | |
| Yodprasit et al. | 20-gbps 60-ghz ook modulator in sige bicmos technology | |
| CN115567004A (zh) | 一种三路Doherty射频功率放大器 | |
| US20060043425A1 (en) | Semiconductor integrated circuit device which restricts an increase in the area of a chip, an increase in the number of lead terminals of a package, and can reduce parasitic inductance | |
| JP2002217615A (ja) | 電力分配合成器 | |
| Nagata et al. | 5.8 GHz RF transceiver LSI including on-chip matching circuits | |
| Otaka et al. | A 1.9-GHz Si-bipolar variable attenuator for PHS transmitter | |
| JPH11252019A (ja) | 光受信回路 | |
| JPH11312932A (ja) | 高周波増幅器 | |
| TW202433717A (zh) | 能夠增加干擾源之間的隔離度的積體電路封裝結構 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |