JP4319339B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4319339B2
JP4319339B2 JP2000265982A JP2000265982A JP4319339B2 JP 4319339 B2 JP4319339 B2 JP 4319339B2 JP 2000265982 A JP2000265982 A JP 2000265982A JP 2000265982 A JP2000265982 A JP 2000265982A JP 4319339 B2 JP4319339 B2 JP 4319339B2
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JP
Japan
Prior art keywords
amplifier
power supply
unit
supply line
pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000265982A
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English (en)
Japanese (ja)
Other versions
JP2002076235A5 (https=
JP2002076235A (ja
Inventor
久美子 瀧川
聡 田中
聡 香山
祐一 齋藤
範雄 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000265982A priority Critical patent/JP4319339B2/ja
Priority to TW090110764A priority patent/TW516268B/zh
Priority to US09/911,796 priority patent/US6624509B2/en
Priority to EP01118714A priority patent/EP1187208A3/en
Priority to CNB011258381A priority patent/CN1227733C/zh
Priority to KR1020010052874A priority patent/KR100750449B1/ko
Publication of JP2002076235A publication Critical patent/JP2002076235A/ja
Publication of JP2002076235A5 publication Critical patent/JP2002076235A5/ja
Application granted granted Critical
Publication of JP4319339B2 publication Critical patent/JP4319339B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/26—Circuits for superheterodyne receivers
    • H04B1/28—Circuits for superheterodyne receivers the receiver comprising at least one semiconductor device having three or more electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/206—Wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP2000265982A 2000-08-30 2000-08-30 半導体装置 Expired - Fee Related JP4319339B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000265982A JP4319339B2 (ja) 2000-08-30 2000-08-30 半導体装置
TW090110764A TW516268B (en) 2000-08-30 2001-05-04 Semiconductor device
US09/911,796 US6624509B2 (en) 2000-08-30 2001-07-25 Semiconductor device
EP01118714A EP1187208A3 (en) 2000-08-30 2001-08-03 Semiconductor device
CNB011258381A CN1227733C (zh) 2000-08-30 2001-08-29 半导体器件
KR1020010052874A KR100750449B1 (ko) 2000-08-30 2001-08-30 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000265982A JP4319339B2 (ja) 2000-08-30 2000-08-30 半導体装置

Publications (3)

Publication Number Publication Date
JP2002076235A JP2002076235A (ja) 2002-03-15
JP2002076235A5 JP2002076235A5 (https=) 2007-01-25
JP4319339B2 true JP4319339B2 (ja) 2009-08-26

Family

ID=18753157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000265982A Expired - Fee Related JP4319339B2 (ja) 2000-08-30 2000-08-30 半導体装置

Country Status (6)

Country Link
US (1) US6624509B2 (https=)
EP (1) EP1187208A3 (https=)
JP (1) JP4319339B2 (https=)
KR (1) KR100750449B1 (https=)
CN (1) CN1227733C (https=)
TW (1) TW516268B (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076267A (ja) * 2000-08-22 2002-03-15 Hitachi Ltd 無線送受信装置
US20020127985A1 (en) * 2001-03-08 2002-09-12 Fransis Bert L. Wideband local oscillator architecture
US20020127992A1 (en) * 2001-03-08 2002-09-12 Fransis Bert L. Wideband local oscillator architecture
US6751470B1 (en) * 2002-04-08 2004-06-15 Nokia Corporation Versatile RF front-end multiband mobile terminals
KR100993579B1 (ko) 2002-04-30 2010-11-10 르네사스 일렉트로닉스 가부시키가이샤 반도체장치 및 전자 장치
KR100993277B1 (ko) 2002-04-30 2010-11-10 르네사스 일렉트로닉스 가부시키가이샤 반도체장치 및 전자 장치
WO2003094236A1 (fr) * 2002-04-30 2003-11-13 Renesas Technology Corp. Dispositif a semi-conducteur et appareil de radiocommunication
AU2003234812A1 (en) * 2002-06-05 2003-12-22 Hitachi Ulsi Systems Co., Ltd. Semiconductor device
KR100499788B1 (ko) * 2002-11-27 2005-07-07 인티그런트 테크놀로지즈(주) 집적회로 칩
WO2004073063A1 (ja) * 2003-02-14 2004-08-26 Renesas Technology Corp. 電子装置および半導体装置
TWI225332B (en) * 2003-05-20 2004-12-11 Mediatek Inc Multi-band low noise amplifier
JP2005006031A (ja) * 2003-06-11 2005-01-06 Sony Corp 増幅器および受信回路
KR101014708B1 (ko) * 2003-08-27 2011-02-16 엘지전자 주식회사 드럼세탁기의 로터리 놉 어셈블리 구조
JP4418250B2 (ja) * 2004-02-05 2010-02-17 株式会社ルネサステクノロジ 高周波回路モジュール
JP2006073821A (ja) * 2004-09-02 2006-03-16 Sharp Corp 半導体集積回路装置
JP2008218776A (ja) * 2007-03-06 2008-09-18 Renesas Technology Corp 半導体装置
US8085596B2 (en) * 2007-09-11 2011-12-27 Micron Technology, Inc. Reducing noise in semiconductor devices
JP5588147B2 (ja) * 2009-10-26 2014-09-10 キヤノン株式会社 半導体装置及び半導体装置を搭載したプリント基板
JP5499696B2 (ja) 2009-12-25 2014-05-21 富士通セミコンダクター株式会社 半導体装置及び実装構造
CN107636957A (zh) * 2015-05-20 2018-01-26 怀斯迪斯匹有限公司 超低功率和低噪声放大器
CN106936431B (zh) * 2015-12-30 2021-07-20 上海贝岭股份有限公司 一种高性能低噪音芯片及其制造方法
IT201600086488A1 (it) * 2016-08-22 2018-02-22 St Microelectronics Srl Dispositivo a semiconduttore e corrispondente procedimento
US10880991B2 (en) * 2018-04-04 2020-12-29 Marvell Asia Pte, Ltd. Apparatus and methods for enhancing signaling bandwidth in an integrated circuit package

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2716005B2 (ja) * 1995-07-04 1998-02-18 日本電気株式会社 ワイヤボンド型半導体装置
KR0156334B1 (ko) * 1995-10-14 1998-10-15 김광호 차폐 본딩 와이어를 구비하는 고주파, 고밀도용 반도체 칩 패키지
JPH1075132A (ja) * 1996-08-29 1998-03-17 Mitsumi Electric Co Ltd 差動増幅装置
US5789799A (en) * 1996-09-27 1998-08-04 Northern Telecom Limited High frequency noise and impedance matched integrated circuits
JP3920427B2 (ja) * 1997-11-19 2007-05-30 富士通株式会社 差動増幅回路及びオペアンプ回路
WO1999027646A1 (fr) * 1997-11-21 1999-06-03 Hitachi, Ltd. Dispositif a circuit amplificateur a haute frequence et systeme de transmission a haute frequence comprenant ce dispositif
JPH11163644A (ja) * 1997-11-26 1999-06-18 Fujitsu Ltd 差動増幅回路の出力回路
US6094084A (en) * 1998-09-04 2000-07-25 Nortel Networks Corporation Narrowband LC folded cascode structure
JP2000299438A (ja) * 1999-04-15 2000-10-24 Hitachi Ltd 半導体集積回路
JP4018312B2 (ja) * 2000-02-21 2007-12-05 株式会社ルネサステクノロジ 無線通信装置

Also Published As

Publication number Publication date
CN1340858A (zh) 2002-03-20
EP1187208A2 (en) 2002-03-13
TW516268B (en) 2003-01-01
JP2002076235A (ja) 2002-03-15
US6624509B2 (en) 2003-09-23
KR100750449B1 (ko) 2007-08-22
EP1187208A3 (en) 2011-09-07
CN1227733C (zh) 2005-11-16
US20020053729A1 (en) 2002-05-09
KR20020018146A (ko) 2002-03-07

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