TW511399B - Semiconductor device and its manufacture method - Google Patents

Semiconductor device and its manufacture method Download PDF

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Publication number
TW511399B
TW511399B TW90103576A TW90103576A TW511399B TW 511399 B TW511399 B TW 511399B TW 90103576 A TW90103576 A TW 90103576A TW 90103576 A TW90103576 A TW 90103576A TW 511399 B TW511399 B TW 511399B
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TW
Taiwan
Prior art keywords
semiconductor device
conductive
semiconductor element
semiconductor
electrode
Prior art date
Application number
TW90103576A
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English (en)
Inventor
Noriaki Sakamoto
Yoshiyuki Kobayashi
Junji Sakamoto
Yukio Okada
Yusuke Igarashi
Original Assignee
Sanyo Electric Co
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Publication of TW511399B publication Critical patent/TW511399B/zh

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Description

511399 A7 經濟部智慧时產局員工消費合作社印製 五、發明說明（1 ) 【技術領域】 本發明係相關半導體裝置及其製造方法，特別係關於 可將源自半導體元件的熱量’良好釋放出的半導體裝置及 其製造方法。【習知技術】 按近年來1C封裝隨在行動機器或小型❿高密度安 裝機器採用的演進，習知IC封裝及其安裝概念已產生大 幅度的變化。較詳細内容，如電子材料(1998 I 9月刊第22頁〜)中相關「csp &術與其封裝材料、裝置」特刊中 所載述。 第10圖表示採用柔性板50作為中介基板（interp〇ser board) ’在該柔性板5〇上，利用接著劑貼合上銅箔圖案η 後更進一步固接上Ic晶片52。然後以形成於該工c晶 片52周圍上的黏接用墊（b〇nding pad)53，作為導電圖案 51。此外，透過與該黏接用墊53形成一體的配線5ib， 而形成焊錫球連接用墊54。 在該焊錫球連接用墊54内側，設置將柔性板開口的 開口邛5 6，並透過該開口部5 6而形成焊錫球5 5。然後將 柔眭板50置於基板上，整體使用絕緣性樹脂58予以密封。 【發明欲解決課題】 惟，設置於1C晶片52背面上的柔性板5〇係屬非常 Φ貝的’所以有產生成本上昇的問題、封裝體厚度增厚的 問題、重量增加的問題。 此外’因為支撐基板係由金屬以外材料所形成，將產 木紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 312146 (請先閱讀背面之注意事項再填寫本頁) pi裝----- 訂---------線· 511399 A7 五、發明說明（2 ) C請先閱讀背面之注意事項再填寫本頁} 生由1C晶片背面傳達至封裝體背面的熱阻抗將變大的問 題。該支撐基板為柔性板'陶:是基板、或印刷電路板。此 外，由熱導性佳之材料所形成的熱導通路，乃為金屬細綠 57、導電圖案51、及焊錫球55，屬驅動時無法充分散熱 的構造。所以，將造成驅動肖IC晶片的溫度上昇，且驅 動電流無法充分流通的問題發生。 【課題解決之手段】 本發明為有馨於上述諸項課題’第1項解決手段，係 具借有對應半導體元件之黏接電極而設置的黏接墊、設置 於該半導體元件配置區域上的散熱用電極、以面向下黏接 法電性連接於該黏接塾的該半導體元件、至少設置於該半 導體元件下面的底填充材料、裸露出該黏接塾背面與該底 填充材料背面且-體化的將該半導體元件密封的絕緣性樹
脂。 T 第2項解決手段，係具備有對應半導體元件之黏接電 極而設置的黏接墊、設置於該半導體元件配置區域上的散 熱用電極、以面向下連接、兵雷卜士、志 經濟部4°慧財'1局員工消費合作社印製 Γ逆按性連接於該黏接墊的該半導 ，元件、至少設置於該半導體元件下面並裸露出該黏接塾 背面而一體化密封的底填充材料。 第3項解決手#，乃該底士真充材肖係頂吹半導體元件 側面，而填充於鄰接該黏接塾間的分離溝、該黏接塾與該 散熱用電極間的分離溝。 第4項解決手段，係具備有對應半導體元件之黏接電 極而設置的黏接塾、設置於與該黏接塾一體之配線上 A7 五、發明說明（3 接私極包圍該外接電極的散熱用電極、以面向下之方式 ^ 1±連接於該黏接墊的該半導體元件、至少設置於該 70下面的底填充材料 '裸露出該外接電極背面與該底 、 料者面且一體化的將該半導體元件密封的絕緣性樹 月旨。 第5項解決手段，係具備有對應半導體元件之黏接電 柽而5又置的黏接墊、設置於與該黏接墊一體之配線上的外 接電極、包圍該外接電極的散熱用電極、以面向下連接法 電性連接於該黏接塾的該半導體元件、至少設置於該半導 體元件下面的底填充材料。 第6項解決手段，乃該底填充材料係頂吹半導體元件 側：’而填充於鄰接該黏接墊間的分離溝、鄰接該配線間 的刀離溝、該外接電極與該散熱用電極間的分離溝。 ^ ^解決手’又’乃連接該半導體元件與該黏接墊之 、接構件，係為焊接材料、導電糊劑、或非等 樹脂。 守宅丨王 第8項解決手段’乃該黏接墊的側面，係形成彎 造。 # 項解決手段，乃該黏接塾、與該黏接塾-體的配 與該配線-體的外接電極側面，係形成彎曲構造。 第項解決手段，係準備導電落、施行半蝕刻處理， 俾使導電圖案形成凸狀； 以面向下連接法，將該導電圖案與半導體元件予以連 接， 張尺度適❼_家標準(CNS)A以格⑵Q X 297公髮） 312146 1 丁 經 濟 部 智 .¾ 財 產 局 消 費 合 作 社 印 製 線 3 B7 五、發明說明（4 使底填充材料$ 間； ^ ^入於該半導體元件與該導電箔之 二電予=置絕緣性樹脂，俾將該半㈣件、 裸路出該底填充材料背面，並去 將導電圖案分離。 命兒 >白月面，俾 第1 1項解決手段，係準備導 俾使導電圖案形成凸狀； ^了^刻處理， 接；以面向下連接法’將該導電圖案與半導體元件予以連 間；使底填充材料至少滲入於該半導體元件與該導電落之 八雜裸露出該底填充材料背面，並去除該導電ϋ背面，俾 勿離而供作為導電圖案。 第12項解決手段，乃在將該導電圖案分 壓模法予以分離。 交才i用 第13項解決手段，乃在該導電落上，乃構成單元之 導電圖案係呈矩陣狀’並分別在各單元上設置該半導體元 第14項解決手段，乃在將該導電圖案分離後，利用 切割’將該單元與該單元之間予以分離。 藉由提供本半導體裝置，便可將半導體元件的熱量， 傳導於散熱用電極。此外，含該散熱用電極的導電圖案， 因為毋需採用支撐基板，所以成本將降低，且半導體芽置 本紙張尺度剌巾閱家鮮（CNS)A4祕⑵G X 297公t ) -- A7 五、發明說明（5 ) 的厚度亦可變薄。 【發明實施態樣】 首先，針對本發明之半導體裝置，請參閱第1圖對比 誶細說明。其中1 1A圖所示係半導體裝置的平面示意 圖。第1B圖表示A-A線剖面示意圖。 第1圖表示在絕緣性樹脂10中，埋入下列構成要件。 即’埋入黏接髮* 11、與該黏接螯體的配線11B、 與該配'線ΠΒ形成一體化且設置於該配線UB另一端上 的外接電極11C。更進-步埋入設置於圍繞該導電圖案11A 至11C之-區域的散熱用電極11D、與設置於 r上的半導體元件12。另外，半導體元…利用電 占、充材枓AF’而與該散熱用電極UD固接第1A圖 中虛線所示部分。 再者’半導體元件12之黏接電極13，與黏接墊nA， 因為半導體元件12係 囬朝下之方式女裝，所以透過焊 等焊接材料SD、Ag糊劑等導+細爲 b w寻V包鞠劑、非等向性導電性 樹月曰，而電性連接。 經濟部智慧財產局員工消費合作社印製 其次’該導電圖案11A i 11D #]面，經等向性蚀刻 =，此處因施行濕式姓刻。在此因為經濕 effect)。 構…生銷釘效果(an-r 本結構係由半導體元件12、％奴戈 11〇 複數導電圖案11A至 UC、散熱用電極11D、底壌右从丄， # „ -異充材料AF、埋藏該等的絕緣 性樹脂10等4項材料所構成。姓^〆 ^ 特別係在半導體元件12的 枣砥iR國國家標準（CNS)A4規格⑵ 312146 511399 絕緣性樹脂10密封， ^ 列用 Ί η、☆试 > ,… 形成封裝體。所以’由絕緣性樹I閱 ° t# 背 面 訂 經 濟 部 -智 U 1 “財 ，產 -局 消 費 .合 作 社 -印 η A7
BY 五、發明說明（6 配置區域中，在導 分離溝14中，形成至11D上、及該等之間的 填充材料上羞材:斗AF。特別係在經填充底 /冓14的背面，呈裸露狀態下，利用 ^ U) ^ ^ ^ q π姐 厂/丨从^出、吧緣性樹 月日10、底填充材料AF，^ ^ 而支撐該黏接塾11Α…、半導 元件1 2 - 干命篮 底填充材料AF择i -r$
。 τ、由可滲入狹窄間隙中的絕緣材料所I 形成，攻好採用如第4国— 5· 側面的材料。另外，介 孓裝 ’、w在半導體元件1 2背面形成薄薄I頁 、&填充材料AF，並利用絕緣性樹脂10密封。
'另外，由後述製造方法（請參閱第7圖）中得知，若 半V體70件1 2背面亦形成底填充材料AF的話，便可來 成省略絕緣性樹脂10的半導體裝置。 V 絕緣性樹脂1〇係可採用如環氧樹脂等熱硬化性樹 脂、聚醯胺樹脂、聚苯撐亞硫酸醋等熱可塑性樹腊。另外， =性樹脂，只要是為採用模具而可凝固的樹脂、可利用 次潰、塗敷而被覆的樹脂的話，所有的樹脂均可採用。 此外’導電圖案11Α至UD可採用以Cu為主材料的 導電箱、或Fel合金、A1_Cu疊層物、a1_Cu_ai疊層物 等。當然亦可採用其他導電材料，特別係以可蝕刻的導電 材料、以雷射蒸發的導電材料為更佳。此外，若考慮半2 d f生黾鍍成形性、熱應力等因素的話，最好採用以札延 所形成的Cu為主材料的導電材料。 在本發明中之第1 B圖中，絕緣性樹脂1 〇與底填充材 本紙張尺度適用中國國家標準（CNS)A4規烙（210 x 297公复） ° )12146 A7 五、發明說明（7 ) 料AF亦填充於該分離溝15巾，而在第7圖巾，因為底 填充㈣AF填充於分離溝15巾，所以便具有防止導電 圖案脫洛的特徵。另外，钱刻處理係採用乾式敍刻法或濕 式飿刻法，而施行等向性姓刻處理，而使黏接塾m··側 面、配線11B ···側面、外接電極uc…側面 極iid側面形成彎曲槿！ ^ ^ ^ ^ 风穹曲構仏，而可產生錨釘效果。結果， 便可產生導電圖幸11Δ $ 电口茶11Α至11D不致由絕緣性樹脂ι〇上脫 落的構造。 同時^电圖案11Α至11D背面係由絕緣性樹脂J 〇 的背面裸路出。在第1B圖中，雖形成絕緣被覆膜W，但 亦可省略此絕緣被霜瞪 覆膜16，而將散熱用電極11D背面、 與安裝基板上的電極書技 一 蚀置接固接。精由此種構造，由半導體 元件12所產生的執旦 的熱里’便可散熱於安裝基板上的電極， 而可達防止半導體元件12溫度上升，及增加該半導體元 件12之驅動電流或驅動頻率之功效。此外，亦可將外接 電極llcf半導體元件Π電性連接。
半V肚裝置，因為利用係以屬導電圖案11A至11D 之遂、封樹腊的絕緣性爲+匕 樹月曰10支撐，所以不需要支撐基板。 此種結構屬本發明特微一 试之一。如習知技術段中所說明般， 習知半導體裝置的導雷敗 包路，乃利用支撐基板（如柔性板、 印刷電路板、或陶奢其k 充暴板）支撐，或利用導線框支撐，而 本發明則屬不需採用亦 乃J的構造。所以，本電路裝置便以
最少必要元件構成，因A u马不需要支撐基板，不僅可達薄型、 輕量化’同時因為亦可 __ _ 抑制材料費而具廉價之功效者。 本紙張尺度適网φ國國家標準^----- 7
請 先 閱 讀 背 之 注 意 事 項J Μ 填 寫裝 本衣 頁I 訂 線 經濟部智慧財產局員工消費合作社印製 312146 丄丄 丄丄 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（8 ) 在封裝體的背面上將裸露出導 、 外分四命電圖案11A至11D。若 在此區域中，被覆如焊錫箄煜 炫金 枓的話，則因散熱用電 極11D面積較廣，所以焊 坪接材枓便沾潤較厚。故，當在 固接於安裝基板上時，外接雷錳nr 田社 +、 卜接電極UC背面的焊接材料並 未沾潤到安裝基板上的電福 現象。 w $極所以假設將產生連接不良的 為解決此種不良現象，便在 长平導體裝置15背面形成 絕緣被覆膜16。第1Α圖中斤魂夕 Λ α τ虛線之〇部分，係表露出於 緣被覆膜16外的外接雷榀"r 「强包極lie…、散熱用電極11D。即， 因為該〇記號以外部分覆蓋 絶緣破覆獏16，且該〇記號 部为的大小實質上相同，所 所乂在此邛份所形成的焊錫材料 厚度便實質上相同。此情开j，. ^ 在4錫印刷後、回流後亦均 將相同。另外，可認為如 8 Au ' Ag-Pd等導電糊劑亦 同。藉由此種結構便可抑制恭 仰制毛性連接不良。此外，散熱用 電極11D之露出部17的尺寸，在考慮半導體元件的散熱 性因素下，可形成較大於外接電極lie t露出尺寸。因 為外接電極11C全部為竇_暂μ 巧貫質上相同尺寸，故亦可將外接 電極11C…跨過全區裰霞φ 露出’且依與散熱用電極11D背面 之其中一部份實質上相同的尺+ 、雨 N的尺寸，稞露出於絕緣被覆膜 116 外。 再者，藉由設置絕緣祜 I破覆獏16，便可將安裝基板上 所設置的配線，延伸於太主道祕# 本丰導體裝置背面。一般設於安裝 基板上的配線’係採迁迪兮坐彳首 疋避該丰導體裝置的固接區域而配 置，但藉由該絕緣被覆膜】6沾 [_2联16的形成，便可不需迂迴配置。 本紙張尺度適用中國國家標準：CNS)A4規格 -------------裝--------訂i m ϋ 11 i ϋ— I (請先閱讀背面之注意事項再填寫本頁) B 312146 A7 五、發明說明（9 ) 樹脂10與底填充材料af均較導電圖 成在安裝基板的配線與導電圖案之間形 說明半導體裝置之製造方法的第2實施態樣 本製造方法係第i圖之半導體裝置15的製造方法， 6圖所示係對應第1A圖A-A線剖面示意圖。 首先，準傷如第2圖所示的導電f|2〇。最好厚度為 至⑽# m左右’此處採用7〇 #瓜的軋延銅箔。接著， :該導電箱20表面上’形她刻罩幕的導電被覆臈η、 …且。另外，該圖案係與第1A圖之黏接墊ιια·.、配 UB...、外接電極UC...、散熱用電極11D為同—圖 案。當取代導電被覆膜21 @改用光阻時，在光阻下層， 至少在對應黏接塾的部分位置處，形成Au、Ag、pd 等“被覆膜。此乃為防止Cu氧化’與可進行焊錫材 料的連接（以上請參閱第2圖所示）。 …接者’透過該導電被覆膜21或光阻，對導電箔20施 订半姓刻處理。钱刻的深度，只要淺於導電帛2〇的厚度 便可。另外，敍刻深度越淺的話，越可能形成細微圖案二 然後，利用半姓刻處理，而使導電圖案UA至ud 在導電20表面上表現出凸狀。另外，導電猪2〇，係如 前述、，採用經軋延而形成％ Cu冑主材料之Cu箱。但， 亦可為由A1所形成的導電箱、由合金所形成的導 電猪、Cu-Al疊層體、A1_Cu-A1 φ層體。特別係Ai_Cu_Ai ,疊層體，可防止因熱膨脹係數差而造成撬曲現象的發生〇 乱紙張尺度適用中國國家標連（CNS)A4規格（210 x 297公釐） 9 312146
I 頁 訂 線 經 濟 部 智 慧 財 產 局 消 費 合 社 印 製 A7 五、發明說明（10 =向：：,用軋延鋼落。此乃因為軋延鋼謂係x軸、γ 向的、”成長大於z軸方向 特別係當配線11B鲈具性 芎曲丨生較強所致。 ,^ 較長時，附加於此配線的應力便將_ 大，藉由採用此軋力便將〜 上請參閱第3圖）。 .應以應力的耐性（以 將黏接電極13與黏接塾UA 譬如利用谭錫材科SD而固接著。纟面對面配且方式， 設置有焊锡球的半導體元件12，在黏接墊 卞… 烊錫材料所形成的糊劑。此糊劑在燒結 =暫Z ’可將半導體元件12暫時黏接。然後，即在此 黏:狀態下…火爐中，將焊錫材㈣融= 半導體疋件12與黏接墊形成電性連接。 填充利用谭錫材料構成一定間隙的部分，形成底 :=二。此底填充㈣^屬較容易渗入半導體元 〃 ¥电圖案間之間隙的材料，且利用控 =成至半導體元件】2側面、或形成至半導^件^ 此底填充材料AF係在考慮與絕緣性樹腊1〇之黏接 性、及與導電圖案之黏接性下，而選擇者。 所以’底填充材料AF係設置於散熱用電極ud與外 接電極UC的分離溝14中、由黏接塾11A至外接電極11C 所幵/成導電圖案間的分離溝14中、以及該等之上。所以 不而使用上述支撐基板便可安裝半導體元件，且半導體元 件/2的尚度，可依面向下之黏接法安裝部分的低配置。 ^封錢外觀的厚度便可㈣（以上請參閱第4圖） I氏張尺度適用#國國家標準（CNS)A4規格（21Q X 297公髮)~-------- ί0 312146 訂 線 濟 部 智 財 產 局 消 費 ，合 作 社 ，印 製 A7 A7 經 濟 部 智 慧 財 產 局 消 費 合 社 印 製 1] 五、發明說明（η 然後’形成絕緣性樹脂10，俾覆蓋經半蝕刻處理而 所形成的導電圖案^至nD••…半導體^件12、及金 屬、’、田線1 4絕緣性樹脂可採用熱可塑性、熱硬化性中任 一者均可 ° 、再者可利用移轉模造、射出模造、浸潰或塗敷等方 式進订製以。樹脂材料可採用環氧樹脂等熱硬化性樹脂進 仃壓核^，或採用液晶高分子、$苯標亞硫酸醋等執可塑 性樹脂進行射出模造。 在本貝施態樣中，絕緣性樹脂的厚度，係 屬細線14頂部起往上覆笔约]ΛΛ ^ 巧你上復盍約l〇〇wm。該厚度在考量 體裝置強度下，可厚亦可薄。 在注入樹月旨的處理程序中，因為導電圖案11A至11D :與板狀導電箱2〇形成-體’所以只要導電H 20不產生 偏^該等導電圖案UA至11D的位置絕對不產生偏移。 1上，在絕緣性樹脂1G、底填充 a 成導電圖案11A至11D的^杜 入形 詩幻a 1D的凸件、以及半導體元件12，並 使較凸件更下方的導電箔2〇， 卫 第5圖所示)。 由“稞露出(以上請參閱 接著，去除裸露出於該絕緣_冑Μ Μ 2〇，而將導電圖案丨丨八至丨 泊 王Αΐυ分別隔開分離。 此項分離處理可採用各種 品土队. 法’亦採用利用蝕刻背面 一心 木用研磨或研削等方法，玄叮 一者合併使用。譬如若切削命 /、" 降7性 裸路出絕緣性樹脂10為止 情況時，將造成導電箔20的切削居4、 馮止 ------ 屑或外側較薄的毛邊肤
本紙張尺f適用ϋ國家標準（CNS)A4規格γ21〇 X 312146 丄 丄 經 濟 部 智 慧 財 產 局 消 費 合 社 印 製 A7 B7 五、發明說明（U ) 金屬，造成摻進絕緣性樹脂1 〇或底填充材料AF中的問 題產生。故，若利用姓刻處理而分離黏接塾〗丨…的話， 則位.於導電圖案11A至11D間的絕緣性樹脂1〇表面、或 底填充材料AF表面上，將不致產生導電箔2〇摻進金屬 的情況，藉此防止細微間隔之導電圖案UA至nD間產 生短路不良現象。 當複數個半導體裝置15單位形成一體時，在施行分 離處理後，追加施行切割處理（dicing)。 此處雖採用切割裝置施行個別分離處理，但亦可採用 巧克力壓製機、或沖床、剪床等。 此處，在將經分離並裸露於背面的導電圖案llA至 上，形成絕緣被覆膜16，並對絕緣被覆膜16進行圖案化 f理，俾使如帛1A目|線圓圈所示部分裸冑出。然後對 箭頭所示部分施行切割處理，而形成半導體裝置。 另外焊錫21亦可形成於施行切割前、或在經切割 處理後才形成。 藉由上述製造方法，便可將導電圖案、半導體元件， 埋入絕緣性樹脂内，而獲得輕薄短小的封裝體。 第7圖表示經改良第1圖後之半導體裝置，屬省略絕 緣性樹脂10者。在第4圖所示的處理程序中，使截至半 導體元件12 f面為止均形成底填充材料AF之方式，施 行塗敷並固化後，便省略絕緣性樹脂1()的形成，屬經切 割者°另外，在第7圖中，亦可裸露出半導體元件12背 I面。因為平面示意圖與圖所示相同，在此便省略。 本纸張尺度適用中國國家標準（CNS)八4現格（21〇 八髮、----— - “ 12 312146 (請先閱讀背面之注意事項再填寫本頁) 511399 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明（I3 不致’ώ動/有的實把例中，均形成有供使焊錫材料SD ==c。譬如以焊錫為例，如第ib圖所 不般至乂在導電圖案11AS UD t其中 防止流_ DM，而阻止焊錫 开7成 i匕叙卜日级、u τ日 所明防止流動膜係 '知錫沾潤性較差的膜’譬如形成於高分子膜、咬妒成 於沁表面上的氧化膜等。 、或形成 、該防止流動膜的平面形狀，請參閱帛8圖所示。另外， 為圖式繪示的便利性，省略散熱用電極。 在第8圖中雖形成八至E五個圖案，但選擇其中一 個A所不圖案係在黏接塾1 i a與配線㈣邊界上，來 成防止流動膜DM’且在黏接塾nA實質： t連接構件。另外，亦可包含配線UB全區域、或2 %極lie，均形成防止流動膜dm〇b係在黏接墊上 防止流動膜DM，為去除設置電性連接構件的部分者二C 係^加型態B的形成區域，包含配線UB全區域、或外 接私極11 C上，均形成防止流動膜DM。D係型態c的開 口部’由矩形轉變成圓形者β E係在黏接 的防止流動膜DM。另外，黏接塾11A雖圖式矩形成^ 可為0形者。此防止流㈣應係'防止焊錫等焊接材料、 糊劑等導電糊劑、導電性樹月旨等的流動者，屬對該等 電性連接構件具沾潤性較差劣者。譬如當焊錫設置於型態 寺於¥錫溶融時’便利用防止流動膜dm堰擋，择由 張力而开> 成元美半球狀。另外，在附著該焊錫之半導 體元件的黏接電極13周圍上’因為形成鈍化 13 312146 (請先閱讀背面之注意事項,填寫本頁) .丨裝 · 線· 511399 經濟部智慧財產局員工消費合作社印製 "氏張尺度適用中國國家“(CNS)A4^^21〇x 297公爱 14 A7 五、發明說明（14 ) (Passivation)，故僅黏接電極沾濕。藉此透過烊錫將半導 體元件與黏接墊予以連接的話，便可將，圓柱狀維持一定 高度。此外，因為利用焊錫量，可調整此高度，所以可在 半導體元件與導電圖案間，設置一定間隙，而可使洗淨液 滲入此間隙中。同時亦可使如底填充材料AF般之黏性較 低的黏接劑滲入。此外，藉由除連接區域外，全部均被覆 防止流動臈DM，而可達大幅提昇與絕緣性樹脂丨〇之黏 接性的功效。 其次，就上述製造方法產生的效果詳細說明於後。 首先’第1 ’係因為導電圖案係經半蝕刻處理，而與 導電箔形成一體而支撐著，所以毋須再採用習知支撐用美 板。 & 第2 ’係因為導電箔上形成有經半蚀刻處理而形成凸 件的黏接墊，所以黏接墊可細微化。因此，可將寬度、間 隔變窄’而形成平面尺寸更小的封裝體。 第3’係因為由導電圖案、半導體元件、黏接構件、 及密封材料所構成，可呈最少必要構成元件，無須浪費材 料’可大幅抑制成本的薄形半導體裝置。 第4 ’係黏接墊係經半蝕刻處理方式形成凸件，而個 別分離係在密封後再實施，所以不需使用撐棒（tie bar)或 懸吊線。故’對撐棒（懸吊線）的形成處理、撐棒（懸吊線） 的切斷處理，在本發明中完全不需要。 第5 ’因為係在將形成凸件的導電圖案埋入絕緣性樹 腊後’再由絕緣性樹脂背面去除導電箔，而將導電圖案分 312146 -------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 511399 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明（15 離，所以不致如習知導線框，在導線與導線間產生樹脂毛 邊的現象。 第6,因為半導體元件係利用底填充材料，而固接於 散熱用電極，且該散熱用電極由背面裸露出，故本半導體 裝置所產生的熱量，可有效率的由本半導體裝置背面釋： 出。此外，利用在絕緣性黏接構件中，混入以氧化膜、 或氧化銘等填充材料，而能更進一步提昇散熱性。另，若 將填充材料的大小統一的話，便可在半導體元件Η與導 電圖案間的間隙保持一定。 接著說明半導體裝置的第3實施態樣 第：圖表示本半導體裝置40。第9A圖係其平面示意 圖，而第9B圖係A-A線剖面示意圖。 ，第1圖表示黏接墊11A，與配線11B、外接電極uc 形成-體化，但此處則在黏接塾11A背面形成外接電極。 另因黏接塾11A背面形成矩形，所以由絕緣被覆膜 16裸露出的圖案，亦形成與該矩形相同的圖案。另，考 慮底填充材料AF的固接性，而形成將散熱用電極HD 分割成複數個的溝43。 【發明功效】 藉由上述說明得知，在本發明中，將形成未使用支撐 ^板也可形成島狀之導電圖案在具厚度的導電落（或導電 箔）中，埋入於絕緣性黏接構件與絕緣性樹脂中的構造。 並且，因為裸露出位於半導體元件背面的散熱用電極，所 以半導體元件的散执可择汝盖 π * m ^ ^ —. 後改善。同時，因為未使用支撐基 巧氏張尺度適㈣家標準（CNS)A4祕 15 312146 (請先閱讀背面之注意事項再填寫本頁) ·· 裝--------訂---------線 A7
五、發明說明（16 y 板’所以可產生薄形、輕量的封裝體。 Φ 再者，利用導電圖荦、本m+ _ ^ ^干夺體凡件、底填出材料、及 絕緣性樹脂等最少必要元件構成，所以形成無浪費資源的 電路裝置。藉此在完成之前並無多餘不必要的構成元件， 故可製造大幅降低成本的半導體裝置。 【圖式簡單說明】 第1(A)及（B)圖係本發明半導體裝置之說明圖。 第2圖係本發明半導體裝置之製造方法的說明圖。 第3圖係本發明半導體裝置之製造方法的說明圖。 第4圖係本發明半導體裝置之製造方法的說明圖。 第5圖係本發明半導體裝置之製造方法的說明圖。 第6圖係本發明半導體裝置之製造方法的說明圖。 第7圖係本發明半導體裝置之說明圖。 第8圖係本發明半導體裝置所採用之導雷圖案的説 明圖。 第9(A)及（B)圖係本發明半導體裝置之說明圖。 第10(A)及（B)圖係習知半導體裝置之說明圖。 【圖示符號說明】 Φ (請先閱讀背面之注意事項再填寫本頁) 裝---- 訂- -丨線. 黏接塾 配線
散熱用電極 黏接電極 分離溝 露出部 511399 A7 B7 、發明說明（17 ) 20 導電箔 21 焊錫 50 柔性板 51 銅羯圖案 52 IC晶片 53 黏接用墊 54 焊錫球連接用墊 55 焊錫球 56 開口部 57 金屬細線 58 絕緣性樹脂 AF 底填充材料 DM 防止流動膜 SD 焊接材料 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 17 312146

Claims (1)

  1. 經濟部中央標準局員工福利委員會印製 W年h /1 第90103576號專利申請案 申请專利範圍修正本 (91年9月19曰 1. -種半導料置，係具備有對應半導體元件之黏接電 極而》 又置的黏接墊、設置於該半導體元件配置區域上 的政熱用電極、以面向下之方式電性連接於該黏接墊 $該半導體元件、至少設置於該半導體元件下面並裸 露出該黏接墊背面而一體化密封的底填充材料。 2·如申請專利11圍帛1項之半導體裝置，具有將該黏接 墊奇面與該底填充材料背面裸露出而一體化的將該 半導體元件密封的絕緣性樹脂。 3·如申請專利範圍第丨項之半導體裝置，其中該底填充 材料係可上升至半導體元件側面而填充於鄰接該黏 接墊間的分離溝及該黏接墊與該散熱用電極間的分 離溝。 4· 一種半導體裝置，係具備有對應半導體元件之黏接電 極而設置的黏接墊、設置於與該黏接墊一體之配線上 的外接電極、包圍該外接電極的散熱用電極、以面向 下之方式電性連接於該黏接墊的該半導體元件、至少 設置於該半導體元件下面的底填充材料。 5 ·如申明專利範圍第4項之半導體裝置，具有將該外接 電極背面與該底填充材料背面裸露出而一體化的將 該半導體元件密封的絕緣性樹脂。 6·如申請專利範圍第4項或第5項之半導體裝置，其中 該底填充材料係可上升至半導體元件侧面而填充於 本紙張尺度適用中國國家標準（CNS) A4規格（210 x 297公釐） 1 312146 DU ¥接4黏接塾間的分離溝及鄰接該配線間的分離 溝、以及该外接電極與該散熱用電極間的分離溝。 7·如申凊專利範圍第4項之半導體裝置，其中連接該半 導體το件與該黏接墊之連接構件，係為焊接材料、導 電糊劑、或非等向性導電性樹脂。 8·如申請專利範圍第1至3項中任一項之半導體裝置， 其中该黏接墊的側面，係形成彎曲構造。 9·如申請專利範圍第4項之半導體裝置，其中該黏接 墊、與该黏接墊一體的配線、與該配線一體的外接電 極側面，係形成彎曲構造。 10·—種半導體裝置之製造方法，係準備導電箔、施行半 #刻處理，俾使導電圖案形成凸狀； 以面向下之方式，將該導電圖案與半導體元件予 以連接； 使底填充材料至少滲入於該半導體元件與該導 電箔之間； 在該導電箔上設置絕緣性樹脂，俾將該半導體元 件、該導電圖案予以密封； 經濟部中央標準局員工福利委員會印製 裸露出該底填充材料背面，並去除該導電箱背 面’俾將導電圖案分離。 11 一種何體裝置之製造m準料電_、施行半 #刻處理，俾使導電圖案形成凸狀； 以面向下之方式，將該導電圖案與半導體元 以連接； H填充材料至少滲入於該半導體元件與該導 本紐尺度適用中國標準（CNS) A4規格（21〇 χ 297公幻 2 312146 H3 H3 經濟部中央標準局員工福利委員會印製 電箔之間； 裸露出該底填充材料背面，並去除該導電箔背 面，俾分離而供作為導電圖案。 如申請專利範圍第10項或第u項半導體裝置之製造 方法，係在將該導電圖案分離後，利用切割（dicing) 予以分離。 13·如申請專利範圍第10項或第u項半導體裝置之製造 方法，係在該導電羯上，乃構成單元之導電圖案係呈 矩陣狀，並分別在各單元上設置該半導體元件。 14·如申請專利範圍第13項所述半導體裝置之製造方 法，係在將該導電圖案分離後1用切割(dicing)， 將該單元與該單元之間予以分離。 本紙張尺度適用中國國家標準（CNS) A4規格（210 x 297公釐） 3 312146
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