JP2005109225A - 回路装置 - Google Patents
回路装置 Download PDFInfo
- Publication number
- JP2005109225A JP2005109225A JP2003342081A JP2003342081A JP2005109225A JP 2005109225 A JP2005109225 A JP 2005109225A JP 2003342081 A JP2003342081 A JP 2003342081A JP 2003342081 A JP2003342081 A JP 2003342081A JP 2005109225 A JP2005109225 A JP 2005109225A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- conductive pattern
- opening
- conductive
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims abstract description 72
- 229920005989 resin Polymers 0.000 claims abstract description 46
- 239000011347 resin Substances 0.000 claims abstract description 46
- 239000011248 coating agent Substances 0.000 claims abstract description 34
- 238000000576 coating method Methods 0.000 claims abstract description 34
- 238000007747 plating Methods 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000000470 constituent Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 22
- 239000011888 foil Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
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- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229910001111 Fine metal Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract
【解決手段】 本形態の回路装置10Aは、導電パターン12と、第1の開口部11Aを除いて導電パターン12を被覆する被覆樹脂14と、導電ペースト9を介して第1の開口部11Aから露出する導電パターン12に電気的に接続された半導体素子13Aとを有し、第1の開口部11Aの大きさは半導体素子13Aよりも小さく形成され、導電ペースト9は第1の開口部11Aから露出する導電パターン12および被覆樹脂14の両方に接触する構成となっている。
【選択図】図1
Description
先ず、図5(A)を参照して、第1の導電箔33および第2の導電箔34が絶縁層32を介して積層された積層シートを用意する。
12A 第1の導電パターン
12B 第2の導電パターン
20 第1の配線層
21 第2の配線層
13A 半導体素子
14 被覆層
11A 第1の開口部
11B 第2の開口部
Claims (6)
- 導電パターンと、
開口部を除いて前記導電パターンを被覆する被覆樹脂と、
導電ペーストを介して前記開口部から露出する前記導電パターンに電気的に接続された半導体素子とを有し、
前記開口部の大きさは前記半導体素子よりも小さく形成され、
前記導電ペーストは前記開口部から露出する前記導電パターンおよび前記被覆樹脂の両方に接触することを特徴とする回路装置。 - 前記導電ペーストは、銀ペーストであることを特徴とする請求項1記載の回路装置。
- 前記開口部から露出する前記導電パターンの表面には、メッキ膜が形成されることを特徴とする請求項1記載の回路装置。
- 前記開口部を前記半導体素子の各辺の中間部に沿って設け、
前記半導体素子の角部は、前記導電ペーストを介して前記被覆樹脂に接着されることを特徴とする請求項1記載の回路装置。 - 前記回路素子を封止するように封止樹脂が形成されることを特徴とする請求項1記載の回路装置。
- 前記導電パターンは、複数層の配線構造を有することを特徴とする請求項1記載の回路装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003342081A JP2005109225A (ja) | 2003-09-30 | 2003-09-30 | 回路装置 |
TW93124507A TWI259571B (en) | 2003-09-30 | 2004-08-16 | Circuit device |
KR20040076223A KR100593763B1 (ko) | 2003-09-30 | 2004-09-23 | 회로 장치 |
US10/948,066 US7019409B2 (en) | 2003-09-30 | 2004-09-23 | Circuit device |
CNB2004100120160A CN1301044C (zh) | 2003-09-30 | 2004-09-28 | 电路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003342081A JP2005109225A (ja) | 2003-09-30 | 2003-09-30 | 回路装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005109225A true JP2005109225A (ja) | 2005-04-21 |
Family
ID=34509681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003342081A Pending JP2005109225A (ja) | 2003-09-30 | 2003-09-30 | 回路装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7019409B2 (ja) |
JP (1) | JP2005109225A (ja) |
KR (1) | KR100593763B1 (ja) |
CN (1) | CN1301044C (ja) |
TW (1) | TWI259571B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8897046B2 (en) * | 2009-12-25 | 2014-11-25 | Rohm Co., Ltd. | DC voltage conversion module, semiconductor module, and method of making semiconductor module |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04254396A (ja) * | 1991-01-30 | 1992-09-09 | Matsushita Electric Ind Co Ltd | 高密度実装基板の製造方法 |
JP3958864B2 (ja) | 1998-05-21 | 2007-08-15 | 浜松ホトニクス株式会社 | 透明樹脂封止光半導体装置 |
JP3420153B2 (ja) * | 2000-01-24 | 2003-06-23 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP3945968B2 (ja) * | 2000-09-06 | 2007-07-18 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
CN1265451C (zh) * | 2000-09-06 | 2006-07-19 | 三洋电机株式会社 | 半导体装置及其制造方法 |
-
2003
- 2003-09-30 JP JP2003342081A patent/JP2005109225A/ja active Pending
-
2004
- 2004-08-16 TW TW93124507A patent/TWI259571B/zh not_active IP Right Cessation
- 2004-09-23 US US10/948,066 patent/US7019409B2/en active Active
- 2004-09-23 KR KR20040076223A patent/KR100593763B1/ko active IP Right Grant
- 2004-09-28 CN CNB2004100120160A patent/CN1301044C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050087857A1 (en) | 2005-04-28 |
KR100593763B1 (ko) | 2006-06-28 |
US7019409B2 (en) | 2006-03-28 |
KR20050031907A (ko) | 2005-04-06 |
TW200512914A (en) | 2005-04-01 |
CN1604719A (zh) | 2005-04-06 |
CN1301044C (zh) | 2007-02-14 |
TWI259571B (en) | 2006-08-01 |
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