TW508683B - Method for hermetic sealing of electronic components - Google Patents

Method for hermetic sealing of electronic components Download PDF

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Publication number
TW508683B
TW508683B TW090127001A TW90127001A TW508683B TW 508683 B TW508683 B TW 508683B TW 090127001 A TW090127001 A TW 090127001A TW 90127001 A TW90127001 A TW 90127001A TW 508683 B TW508683 B TW 508683B
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Taiwan
Prior art keywords
solder
electronic components
cap
layer
weight
Prior art date
Application number
TW090127001A
Other languages
English (en)
Inventor
Shozaburo Iwai
Masaru Kobayashi
Osamu Sawada
Original Assignee
Tanaka Precious Metal Ind
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Publication of TW508683B publication Critical patent/TW508683B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013—Au as the principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Wire Bonding (AREA)
  • Ceramic Products (AREA)

Description

五、發明說明（1) 發明所屬之技術領域 本發明係有關於將載置著 帽罩’通過焊錫接合的電子元 有關於洩漏發生率與習知法才目 的氣密封合方法。 半導體元件的容器（基底）及 件之氣密封合方法。特別係 比’可降低到1 0分之1以下 習知技術 SAW過濾器、水晶振動子等 動的狀態了，由於空氣中的氧氣的甚種+導府體70件原封不 案或墊片，有可能使特性：化：i t軋’腐蝕其導體的圖 須與外氣完全遮斷。通常’内部係真空或被He N =必 以被金屬製或陶竟制的容器（包封體)氣密封合狀載 於電子機器。 ®习口狀態，搭载 術）:/封\+、導=件術（真空密封技 中覆Π Π法係將载置著半導體元件的基Si 谇接巾目罩’覆盍+導體元件的密閉方法”匕焊錫 =縫焊般的，對容器材質及其薄度有限制的必要，且 ' 因 為亦不像雷射费封法般地，要求高價的接合裝 ^當的費用實現高標準的氣密狀態的方法，被廣泛地二 然而，關於上述要求密-«·“一… 508683 五、發明說明（2) ^使用著。於此，使用此些氣密封合技術的電子元件的 製k工私中，必須測定製品的洩漏率，進行被稱為精細洩 漏測試的試驗。藉此，捕捉1〇4atm/cc · sec以下的極其微 小的洩漏，排除與此不符的不良品，以努力提供 ^ 的信賴性保證。 电T兀件 以上各點的， 生率少的、有 子元件之小型 術為目的。 對於要求如此 製造洩漏發生 電子元件的低 對電子機器的 搭載的電子元 此的要求謀取 。另外，若加 密封法亦要求 且’焊錫密封法 件，雖可能高效率地 電子元件，在為取得 降低此洩漏發生率。 一方面，近年來 斷’此些電子機器上 化。然而，藉按照如 其氣密封合變得困難 低之要求，對於焊錫 生率少的方法。 本發明係考慮到 與習知法相比洩漏發 的、即使對今後的電 子元件之氣密封合技 南的氣密性的電子元 率（不良率）0· 2%以下的 費用化，則期望能更加 小型化的要求一直不 件被要求進一步的小型 電子元件的小型化，使 上上述般的不良率的降 更簡易的氣密不良之發 以提供在烊錫密封法， 效的氣密封合係可能 化’亦無戌漏發生的電 發明的概述 了對im;二;=課題進行了深刻的研討，以 因為如果只是;變適】的用進行重新考慮， i更了照樣使用從前的機器， 508683 五、發明說明（3) 無須追加新的設備。 系焊錫(sH : ?法中使用的烊锡材料’大多使用Sn—Pb 2〇番旦Γ Pb卜 焊I作1 在此，本發明者等首先使用了 Au — Sn系 擁、、66 : _錫材料的基本組成。此係因為Pb對人體有令人 ^二虐〜1從對操作者的安全性、近來的環境保全的觀 J考慮，Pb被認為不係合適的材料。 〇/c ，本發明者等在使用AU —Sn系焊錫（Au-20重量 π 1:錫材料的場合’為得到比習知更具信賴性的密 封，^為有必要變更其組成。此係因 點約為280 〇C、t卜鲈柄絲女土上人+ ^ ^ L比軚低，雖有封合時不影響半導體元件的 接口邛之優點，但使用此焊錫的場合，盡管只是少許， 有戌漏發生的場合。 且，本發明者等對使用Au-20重量％Sn系焊錫時的接人 部進行了詳細的研討，得知此焊錫材料的接合部，雖缺i 本上呈現Au-Sn的共晶組織，但局部的形成了 Au濃度高、、土 Au-Sn合金相（以下稱為濃^層）。因為此濃^層係金屬 化合物的1種、較硬，比周圍的Au — Sn的共晶相的熔點古曰， 在帽罩的接合溫度下並未溶融，而是作為固相殘留著阿 且，由於所形成的濃Au層的大小不同，即使將帽罩士 加壓並接合在基底上，在帽罩或基級的接合面有各種 大小的濃Au層附著。依照其大小而產生焊錫層的厚产= 或厚的地方，而使焊錫層的厚度不均一。 又殊4 如此般的焊錫層的厚度不均一並非直接成為洩漏的原
五、發明說明（4) ：ίΐ錫層的厚度不均一明顯的場合’被推測係 測試；：=;期使用而導致的焊錫層表，或浅漏 之處產:：ϊ 外產生差麼而引起的，從焊錫層較薄 焊錫的量亦：兔t ’今後電子兀件的小型&，及所使用的 A 亦蜒為〉、量，此些被認為對濃Au層的影響變大。 久形成接合不良之處，有可能產生即使在接合後不 、狀態、亦無法保持氣密狀態的接合部。 考慮到濃Au層相的影響，將帽罩的接合溫度，即 ' ^加熱溫度昇至使濃Au層可能溶融的、焊錫 =相的高溫，此亦被考慮i^但是，使接合溫度^成 的手二部：半導體元件產生不良影響，因此不認為係適當 于数。在此，本發明者等使接合溫度與習知的同樣範 上重ϊϊ凝固過程中不產生濃Au層’有從根本 董新考慮其組成的必要，研討結果以致想到本發明。 與帽子元ΐ(含有使載置半導體元件的基底 ^ ^知錫接口的工程）的氣密封合方法中，作為此焊 二使用Au 78重量％以上、79· 5重量％未滿，其餘的由^ 、卫成的焊錫，對電子元件進行接合的氣密封合方法。 本發明中，將Au的組成與原來使用的Au —^系焊錫有 微小的改變，藉此，可使凝固時焊錫的組織幾乎都是 Au-Sn的共晶組織。其結果，接合時焊錫層中無濃-層的 可使焊錫層有均-的厚度。因&，長期使用或洩漏 =广時無洩漏的發生。進而，使接合部的洩漏率（不良品 率）可能比以往更加降低，能有效地製造電子元件。口口 1-—. 第7頁 508683 五、發明說明（5) —而且，如本發明般的，對使用的輝錫，將Au的组 疋於Au 7δ重量％以上、79. 5重量％未滿的狹窄範圍的， 因為若在79.5重量％以上則大量產生濃^層，而78重量以 滿時，開始產生濃Sn層，此場合亦對接合部份有不良$ f二然：’在本發明的組成中雖亦有少量的濃如層出：， ί :S。。層係微細的’即使有少量亦不會使焊錫層的厚 可是’如焊錫密封法般的’使用焊錫的接合技術中， 為確保接合部材的接合強度，#交好的係使焊錫有良= 濃性。特別是，作為電子元件中使用的帽 .^ 多地#用斜姑攸^ 0材質’雖較 夕也使用科拔路-儿，54重量％Fe-29重量％Ni —17會旦 =合气的商品名）’但由於科拔路不濕潤於焊錫，對= 路製的巾@罩直接焊接的場合，有可能產生人 的剝離。因此，為確伴焊裼的捫 a不良、焊錫 A . ^ ^ , 馮確保绊錫的潤濕性，且防止焊錫中的澧 u曰的產生，並使焊錫層的厚度均一，如申 所示’最好對帽罩進行鍍金，作為焊錫，申m2旦 %以上、79重量%未滿，其餘的由如 7二！ 如此般地，對帽罩進行鍍金，並使焊 f利fe圍1所述的範圍更狹小，係 對罩且比明 提ΐ，，亦可抑制由於此:金而t 座王/辰U /t 就疋，對帽罩進行鍵今的i县人 層接觸，使焊錕由 ’焊錫與鍍金 二金的濃度增加而產生濃au 從~錫的組成中的AU 78重量〇/0以μ 以下，藉此’使錢金層的Au擴散至微量里二= 第8頁 2169-4441 -PF;Ahddub.p t d 508683
五、發明說明（6) 使焊錫的組織成為Au-Sn的共晶組織。 因此，根據申請專利範圍2的發明，在使帽罩的潤濕 性良好以確保接合強度的同時，亦可抑制濃Au層的 使焊錫層的厚度均一。 ㈢、^ 圖式簡單說明 第1圖係顯示本實施形態的I c包封體製造工程的概略 圖。 第2圖係顯示在本實施形態製造的Ic包封體的 圖。 第3圖、第4圖各係顯示本實施例及比較例的接入 織的SEM照片。 口 ° 符號說明 1C; 2〜1C1所搭載的陶瓷製基底； 3〜帽罩； 4〜焊錫； 5~ 1C包封體。 發明的實施形態 以下’將本發明的實施形態與圖面共同說明。 實施例： 將’合解鑄造法製造的、78· 5wt%Au-21 · 5wt%Sn的塊， 壓延加I 士、@ 1 ， 欣溥板形狀後，穿孔加工製造成角環狀的焊錫。 且’用此焊錫將帽罩接合於搭載著IC晶片的基底，以製造
508683 五、發明說明（7) ic包封體。如圖1所示，ici搭載的陶瓷製基底2，及預先 鍍過$的柯拔路製帽罩3之間，夾進上述加工後的焊錫4， 專送爐加熱至3〇〇c ’使焊錫4溶融並接合成1C包封體 5此時接合後的IC包封體的剖面如圖2所示。 比較例： 對本實施形態，製造8〇wt%Au〜20wt%Sn的蠟材，製造 了 I y包封體。在此，蠟材的製造方法、加工法及丨c包封體 的製造方法係與上述實施形態用同樣的方法。 實施例1 (洩漏率的測定）： 對於以上的實施形態及比較例製造的丨c包封體，實行 精細线漏測試的氦洩漏測試。對兩者中製造的IC包封體的 戍漏率進行比較和研討。於此，氦洩漏測試係將製造的IC 包封體放入氦洩漏探測器，使丨c包封體的外部成真空，對 於從内部漏出的氦分子進行計數。 其結果，比較例中，用8〇wt%Au-20wt%Sn的蠟材製造 的1C包封體的洩漏率（不良率）係〇· 2%。與此相對，本實施 形態中製造的1C包封體的洩漏率係〇· 1%，與比較例的氣密 方法相比，確認洩漏率得到了改善。 實施例2 (接合部組織的觀察）： 接著，須確認實施形態及比較例製造的丨C包封體的接 合部（焊錫層）的組織，對於雙方的接合部進行SEM觀察。 實施形態及比較例的接合部的SEM照片如圖3及圖4所示。 從此些的SEM照片可確認本實施形態的接合部有微細的共 晶組織。一方面，比較例的接合部被確認有粗大的濃Au層
2169-4441-PF；Ahddub.ptd 第10頁 (圖4中的白色部分）。、 同，使接合時的炫雜 因為此濃Au層的大小亦有不 而產生洩漏的。 曰的厚度稍有不均一，被推剛係由此 產業上的利用可能性 後的本發明能在不產生濃^層(使接合 件的密閉封合=不=一化的要因）的情況下’使電子元 , 』此 错此，使電子元件的洩漏發生率比習 雷不氐彼可有效地製造電子元件。而1，本發明對今後的 電子疋件的小型化亦可適應。
2169-4441-PF;Ahddub.ptd 第11頁

Claims (1)

  1. 508683 六、申請專利範圍 1. 一種電子元件的氣密封合方法，含有載置半導體元 件的基底與帽罩用焊錫接合工程， 其特徵在於： 作為上述焊錫，使用Au 78重量％以上、79. 5重量％未 滿，其餘的由S η組成的焊錫，而進行接合。 2. 如申請專利範圍第1項所述的電子元件的氣密封合 方法，其中對帽罩施行鍍金，使用Au 78重量％以上、79重 量％以下，其餘的由Sn組成的焊錫，而進行接合。
    2169-4441-PF;Ahddub.p t d 第12頁
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