TW503680B - Method of forming chromium coated copper for printed circuit boards - Google Patents
Method of forming chromium coated copper for printed circuit boards Download PDFInfo
- Publication number
- TW503680B TW503680B TW090118329A TW90118329A TW503680B TW 503680 B TW503680 B TW 503680B TW 090118329 A TW090118329 A TW 090118329A TW 90118329 A TW90118329 A TW 90118329A TW 503680 B TW503680 B TW 503680B
- Authority
- TW
- Taiwan
- Prior art keywords
- chromium
- layer
- patent application
- scope
- item
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims description 65
- 239000011651 chromium Substances 0.000 title claims description 45
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims description 37
- 239000010949 copper Substances 0.000 title claims description 36
- 229910052802 copper Inorganic materials 0.000 title claims description 35
- 229910052804 chromium Inorganic materials 0.000 title claims description 33
- 239000011889 copper foil Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 23
- 238000011105 stabilization Methods 0.000 claims abstract description 23
- 230000006641 stabilisation Effects 0.000 claims abstract description 22
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910000423 chromium oxide Inorganic materials 0.000 claims abstract description 13
- 239000011787 zinc oxide Substances 0.000 claims abstract description 10
- 229910000831 Steel Inorganic materials 0.000 claims description 76
- 239000010959 steel Substances 0.000 claims description 76
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 50
- 239000011888 foil Substances 0.000 claims description 49
- 230000000087 stabilizing effect Effects 0.000 claims description 21
- 229910052759 nickel Inorganic materials 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 17
- 239000004005 microsphere Substances 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000000945 filler Substances 0.000 claims description 4
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 230000033228 biological regulation Effects 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000012856 packing Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 230000002079 cooperative effect Effects 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 229910021357 chromium silicide Inorganic materials 0.000 claims 1
- 239000003595 mist Substances 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 80
- 229910052751 metal Inorganic materials 0.000 description 28
- 239000002184 metal Substances 0.000 description 28
- 239000000758 substrate Substances 0.000 description 15
- 239000008151 electrolyte solution Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 238000001771 vacuum deposition Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910001430 chromium ion Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910000368 zinc sulfate Inorganic materials 0.000 description 4
- 229910000599 Cr alloy Inorganic materials 0.000 description 3
- 229910001374 Invar Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- -1 buttons Chemical compound 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910001453 nickel ion Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 102000040350 B family Human genes 0.000 description 1
- 108091072128 B family Proteins 0.000 description 1
- 206010010904 Convulsion Diseases 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000007832 Na2SO4 Substances 0.000 description 1
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical class [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000036461 convulsion Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011532 electronic conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- 229910000010 zinc carbonate Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0179—Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
- H05K2201/0317—Thin film conductor layer; Thin film passive component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0361—Stripping a part of an upper metal layer to expose a lower metal layer, e.g. by etching or using a laser
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/384—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12431—Foil or filament smaller than 6 mils
- Y10T428/12438—Composite
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12472—Microscopic interfacial wave or roughness
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
Description
發明篦_ 本發明係有關於一種處理鋼之方法,而更特定言之,係 有關於施加金屬於銅箔之至少一面的方法。 發明皆景 印刷電路板之製造係使用銅箔^在製造印刷電路板時, 一般必須將銅箔黏合於介電基板上以給予鋼箔尺寸及結構 穩定性,。雖然是一種優良電子導體,但銅箔之使用有其固 有問題β例如,鋼很容易氧化及腐蝕,且鋼本身不論是板 軋或滾軋都無法牢附於此等基板。也已知銅會加速或催化 介電基板之分解。為這些理由,鋼箔通常係以在表面施加 一或多層保護層出售。 己知沉積於鋼箔上之薄鉻層在印刷電路板上有許多用 途。在銅表面沉積薄鉻層有二種方式。一種是電沉積方 法,另一種是真空沉積方法β 電沉積方法有若干缺點。首先,該方法使用對環境有害 之物質,處理及廢棄都很難又昂貴。再者,此種方法不準 確,效率又不好。 關於真空沉積方法,為了確保施塗之鉻與鋼之間理想的 黏附力在真空沉積鉻之前,必須對鋼作廣泛嚴密的預處 理以自其表面除去氧化鋼。 本發明將克服這些及其他問題並提供一種不需使用廣泛 嚴密預處理過程之真空沉積方法形成經金屬塗覆之鋼的方 法。 發明概述 狀麟財_家解 503680 A7
五、發明説明 根據本發明,其提佴去& ^ x ^ 供#為一種施塗電阻材料於銅層上的 方法,包含下列步驟: · 在銅層之表面施塗穩定層使表面穩定,穩、定層係由氧化 鋅、乳化鉻、鎳、氧化鎳或其組合所構成,厚度介於約5A 與約70 A之間; 及將電阻材料沉積於經穩定之鋼層表面上。 根據本發明之另-方面,其提供者為一種片材,其係由 具有霧面及經處理而在其上形成微球粒之經處理亮面的反 面處理鋼猪所#成。穩、定層係附加於鋼之經處理亮面。穩 定層係由具有厚度介於約5A與約7GA之間之氧化鋅、氧化 鉻、鎳、氧化鎳或其組合所構成。經蒸氣沉積之電阻材料 係沉積於此穩定層之上。 本發明之一目的為提供一種經鉻塗覆之鋼層以供用於 造印刷電路板。 、 本發明之另一目的為提供一猶茲宙* π致+ 勹捉供種糟真空 >儿積方形成上述經 鉻塗覆之銅層之方法;該沉精方氺盔t A、_蚀从 、 表面作廣泛嚴密之預清潔。 j 本發明之另一目的為提供一種真空沉積金屬於鋼 之方法。 、面上 本發明還有另一目的為提供一種如上所述一般連讀式方 本發明之另一目的為提供一種表面具有一層電阻 銅組件以供用於製造印刷電路板。 科之 這些及其他目的,從以下配合附圖之較佳具 m狀』之說明 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公潑) 503680 A7 __ __B7 五、發明説明(3 ) 及隨附申請專利範圍,將很明白。 Μ圖之簡單說曰月 本發明可在某些組件及組件之配置採取具體型式,其較 佳具體例將詳細說明於說明書並以構成本發明一部份之附 圖例證,其中: 圖1係根據本發明施加金屬於銅箔表面之方法的概略圖;
圖2係沿圖1線2 _ 2所取、顯示銅箔片之放大剖面圖; : 圖3係沿圖1線3 _ 3所取、顯示上有穩定層之圖2銅箔片之-放大剖面圖; 圖4係沿圖1線4 - 4所取、顯示霧面有蒸氣沉積之金屬之 銅第片之放大剖面圖; 圖5係亮面有微球粒之反面處理鋼箔片之放大剖面圖; 圖6係圖5所示相反面有穩定層之鋼箔之放大剖面圖; 訂
圖7係圖6所示霧面有蒸氣沉積之電阻層之鋼箔之放大剖' 面圖; . / 圖8係由圖7所示電阻箔所形成電阻元件之上透視圖; 圖9係二種電阻合金片電阻率對厚度之曲線圖; 圖1 0係亮面具有微球粒而微球粒上具有蒸氣沉積之電阻 層之反面處理銅箔片之放大剖面圖; 圖1 1係亮面具有蒸沉積之電阻層之習知電成形銅箔片之 放大剖面圖; 圖1 2係霧面具有徼球粒而微球粒上具有蒸氣沉積之電阻•’ 層之習知鋼箔片霧面之放大剖面圖;及 圖12Α係圖12之區域12Α之放大圖。 -6 - 本紙張尺度制t目目家鮮(C_ Α4祕(21G X 297公釐) ---—----— 503680 A7
1隹具體例之詳細說__ 本發明係有關於一種施加金屬於鋼箔表 . ^ 〈万法。如此 處所用,·‘金屬,,一詞係指可籍此處所揭示方法真办〜 金屬或合金。本發明特別適用於施加鉻於儿積之 J ’每表面且蔣接 別就此加以說明,但應了解的是,所揭示方 、 ,^ . 也可用於施 加诸如#g、鎳、鋼、鐵、銦、鋅、鈕、鍚、 巩、鱗、锆、 鉬及其合金之金屬於鋼筵上。 用於本發明之鋼箔可利用二種技術之一製造。熟戋軋銅一 箔係藉如滾軋方法將銅或鋼合金條或錠之厚度減少而製 成。電沉積銅係藉將鋼離子電解沉積於旋轉陰極圖筒上衣 然後自陰極剝離沉積之箔而製成。電沉積鋼箔在本^明有 很有利的用途。 鋼箔一般具有標稱厚度自約0·0002吋至約〇 〇2吋。鋼箔厚 度有時以重量表示,而本發明之箔一般具有重量或厚度自: 約1/8至約14嗝/平方呎(〇z/ft2p特別有用之鋼箔為具重量:: 為 1/3、1/2、1 或 2 οζ/ft2 者。 電沉積銅箔具有平滑或亮(圓筒)面及粗糙或霧(銅箔沉積 生長前)面。藉本發明方法施加之穩定層可施加於箔之任一 面’在有些情形則施加於二面。在一具體例中,本發明方 法施加之層係施加於箔之亮面。 本發明方法施加之層所覆蓋之箔之一面或二面可為“標準 粗糙表面’’(standard-profile surface),“低粗糙表面,,或“極低 粗縫表面”。有用之具體例包括使用低粗糙表面及極低粗糙 表面之搐。‘‘欉準粗糙表面,,一詞在此係用以指具r加(ipc- 本紙張尺度適用中國國家標準(CNS) A4规格(210X 297公釐)
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503680 A7 B7
MF-150F)大於10·2微米之簿表面。‘‘低粗糙表面,,一詞係指 具Rtm (IPC-MF-150F)大於10.2微米之箔表面。‘‘極低粗糙表 面,’一詞係指具Rtm (IPC-MIM 50F)大於5丨微米之落表面。 (IPC-MF-1 50F)係5個連續採樣測量值每一個之最大峰-谷垂 直測篁值之平均,且可用倫克泰勒霍伯森公司hybr
Hobson,Ltd·,Leicester,England)上市之 SURTRONIC® 3驗平 儀測量。 熟諳本技藝者將會了解,本發明不僅適用於表面具有穩 定層之鋼箔,而且也適用於己沉積或黏附於其他基材及在 沉積之後或黏附於另一基材之前或之後表面施加穩定層之 銅層適4基材包括,但不限於,聚醮亞胺(見美國專利第 5,685,970及5,681,443號,彼等明確併於此以供參考)、其他 聚合基材、有機基材、鋁(見美國專利第5,153,〇5〇號,其明 確併於此以供參考)、金屬基材(見美國專利第5,674,596 號’其明確併於此以供參考)或鋼與INVAR@之層合物。 現請參閱附圖’其中所示僅為例證本發明較佳具體例之 用非限制本發明之用◎圖丨係例證本發明較佳具體例施加金 屬於鋼表面之一般連續式製法丨〇之概略圖。在所示具體例 中’捲筒1 1提供一般連續之長條鋼箔1 2。圖2係銅箔1 2之 放大剖面圖。鋼箔12具亮面14及霧面16。(圖中,銅箔12 之露面1 6為說明之用誇大顯示)。 鋼 '治1 2較佳進行第一清潔過程,圖中以2 〇表示,以自其 表面除去氧化物膜。在所示具體例中,銅箔1 2係籍導輥2 6 輸送進入槽2 2繞經導輥2 4。槽2 2盛有清潔溶液以自銅箔 __ 猶8峰 本紙張尺度適用中國Β家標準(CNS) Α4规格(21〇 χ 297公|) 五 、發明説明( 6 1〃2之表面除去氧化物膜。較佳使用酸性溶液自鋼箔u除去 虱化銅層。用於清潔銅落12之典型酸性溶液可包括1〇_8〇克 /升Η4〇4。在-具體例中,係使用$ 〇克/升自鋼 1 2除去氧化鋼層。 〆 一在清潔過程20之後,銅筵12即進行沖洗過程,以“表 不,其中配置在銅箔12上方及下方之嘖霧元件”將水喷在 鋼笛12,之表面。配置在噴霧元件32下方的槽“將噴霧元件 喷出之水收集。 在清潔過程20及沖洗過程3〇之後,鋼筵12即進行穩定過 程^以40表示。銅筵12係直接送入槽42並繞過導輥料。 鋼泊12係藉導輥46相對於導輥料固定。槽42裝有電解質 溶液。根據本發明之一具體例,電解質溶液含有鋅離子及 鉻離子電解質溶液之鋅離子來源可為任何鋅鹽,實例包 括ZnSCU、ZnC〇3、ZnCr〇4等等。電解質溶液之鉻離子來源 可為六價鉻鹽或化合物,實例包括ZnCr〇4、Cf〇3等等。 辞離子在電解質溶液中之濃度一般係在約至約2克/ 升、較佳約G.3至約〇·6克/升、更佳約Q 4至約〇 5克/升之範 圍内v鉻離子在電解質溶液中之濃度一般係在约〇·3至約5 克/升、較佳約〇·5至約3克/升、更佳約〇·5至約1〇克/升之範 圍内。 在另一具體例中,氧化鎳或鎳金屬也可本身沉積或與氧 化鋅或氧化鉻或二者共沉積以形成穩定層。電解質溶液之 鎳離子來源可為以下個別或組合之任何一種:Ni2s〇4, NiC03等等。 9- 本紙張尺度適用中躅國家標準(CNS) A4规格(210X297公釐) 裝- 訂 線 503680 A7 _ B7_ :、發明説明(7~~^ 鎳離子在電解質溶液中之濃度一般係在約〇·2至約1.2克/ 升之範圍内。 在另一具體例中,可使用如美國專利第5,9〇8,544號(明碟 併於此以供參考)所揭示含構之其他穩定層。 電解質溶液可包括其他習知添加劑如Na2S〇4,濃度為在 約1至約5 0克/升,較佳約丨〇至約2 〇克/升、更佳約1 2至約 1 8克/升之範圍内。電解質溶液之pH —般係在約3至約6、 較佳約4至約5、更佳約4.8至5.0之範圍内。 電解質溶液之溫度一般係在约2 0 °C至约100。(3、較佳約 2 5 °C至約4 5 °C、更隹約2 6 °C至約4 4 t之範圍内。 如圖1所看出,陽極4 8係毗鄰銅箔1 2之每一面配置以施 加電流密度於銅箔1 2。導輥4 6係陰極輥,其中由氧化鋅及 氧化鉻構成之穩定層4 9係在陽極4 8被電力源賦能時沉積在 銅箔12之曝露亮面14及霧面16。圖3係一剖面圖,顯示亮 面14及霧面16具有穩定層49之銅箔12。 電流密度一般係在約1至約1 〇〇安培/ ft2、較佳約2 5至約 50安培/ ft2、更佳約30安培/ ft2之範圍内。使用多陽極之場 合,陽極間之電流密度可不同。 使用之電鍍時間一般係在約1至約3 0秒、較佳約5至約2 〇 秒之範圍内、更佳約1 5秒。在一具體例中,亮面或平滑面 之總處理時間為約3至1 0秒,及霧面為約1至約5秒。 在一具體例中,電解質溶液中鉻離子與鋅離子之莫耳比 為在約0·2至約1 0、較佳約1至約5之範圍内、更佳約14。 .· 根據本發明’施加於鋼箔1 2之穩定層4 9之厚度係介於約 -10- 本紙張尺度適用中國國家標準(CNS) Α4规格(210X297公釐) 503680 A7 B7
5 A至約70 A、較佳約20 A至約50 A之間。 在上述具體例中,穩定層4 9係由氧化鉻及氧化鋅所構 成。根據本發明之另一方面,穩定層4 9係僅由氧化鉻構 成。施加氧化鉻穩定層之浴化學及製程條件為如下: 1-10克/升Cr03,溶液 較佳5克/升Cr03 pH-2 浴溫度:25°C 10-30 安培/ft2 5-10 秒 或浸入處理·· 1 0秒 在穩定過程4 0之後,上有穩定層4 9之鋼箔1 2即進行沖洗 過程,圖中以50表示。配置在銅箔12上方及下方之噴霧元 件52將水喷至銅箔12 (具穩定層49)之表面以將其沖洗及 清淨並自其除去殘留電解質溶液。配置於噴嘴52下方之槽 5 4將沖洗溶液收集。 上有穩定層49之銅箔12接著進行概略如圖所示之烘乾過 程6 0 ^在所示具體例中,強制空氣乾燥機6 2係配置在鋼箔 12上方及下方以將空氣導至鋼箔12上以使表面乾燥。 根據本發明,在施加穩定層4 9之後,即將金屬真空沉積 在銅箔12之一或二穩定表面◊在圖丨所示具體例中,金屬 係施加於鋼箔12之霧面。金屬可為可真空沉積之任何金屬 包括自鋁、鎳、鋁、銅、鐵、銦、鋅,钽、鍚、釩、鎢、 錐、鉬及其合金所組成之族群中所選出者^根據本發明, 金屬係真空沉積在銅箔1 2上之穩定層4 9上面,不必額外清 -11« 本紙張尺度適用中國國家標準(CNS) Α4規袼(210X297公潑)
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J^68〇
潔或表面準備。金屬係籍真空沉積技術如濺射、化學蒸氣 沉積、電子束沉積、熱蒸氣、離子電鍍(經由基材)或此等 方法之組合直接施加於穩定層4 9上面◎在所示具體例中, j略顯示濺射過程70。如圖i所看出,上有穩定層〇之鋼 V高12係輸送進入以72表示之沉積室中。電子束搶74將電子 流射向由金屬所構成之靶76,使金屬物種被擊鬆而沉積於 鋼箔1 2之表面上。在所示具體例中,沉積過程係將金屬施二 加於鋼箔1 2之霧面上。經施加之金屬較佳具有厚度介於, 50 Α與5,000 Α之間。在所示具體例中,顯示單一靶76 ^如 應了解的是,可使用多靶,且若有需要,金屬可施塗於銅 箔12之霧面16及亮面14兩面。 在本發明之較隹具體例中,鉻係濺射沉積於鋼箔12之霧 面1 6作為黏附層以增強銅箔與基材之黏附力β頃己發現, 前述過程可提供具有良妤黏附性質之經鉻塗覆之銅箔。 ' 以下實例係為供例證發明而提供。除非另有註明,否則 、 在以下實例中及整個說明書及申請專利範圍中,全部份數 及百分比皆以重量計、全部溫度皆為攝氏度及全部壓力皆 為大氣壓。 實例1 將原電沉積鋼箔1/3 oz/ft2之兩面以穩定層如下預處理: 穩定處理: 0.53克/升鋅(ZnS〇4表示)、〇·6克/升Cr (以Cr〇3,表 示)、1 1 克 / 升 Na2S04 浴pH : 5·0 -12- 本紙張尺度適用中國國家標準(CNS) Α4規格(210χ 297公釐)
裝 訂
503680 A7 B7 五、發明説明(1〇 ) 浴溫度:42t 電流密度:8-1 5安培/ft2,霧面..... 2-2.5安培/ft2,亮面 電鍍時間:亮面:6 - 8秒 霧面:3 - 4秒 然後如下將鋁施塗於穩定層: .鉻濺射: + 1 4 ft濺射機 電力:5 - 8千瓦 線速度:1.4至2.2呎/分 鉻厚度:1,200 A,霧面............ 1,300 A,亮面 實例2 將聚醯亞胺膜之二面鍍銅(18微米銅/50微米聚醯亞胺膜 1 /5微米鋼;此一產品係Gouid電子公司製造之Gould®flex產 ' 品系列之一)並如下處理: 穩定處理:
0.53克/升鋅(ZnS04表示)、0.6克/升Cr (以Cr03,表 示)、1 1 克 / 升 Na2S04 浴pH : 5.0 浴溫度:42°C 電流密度:25安培/ft2,兩面 電鍍時間:任何一面或兩面:3 - 8秒 然後如下將鉻施塗於穩定層: -13- 本紙張尺度適用中國國家標準(CNS) A4规格(210 X 297公釐) 503680 Α7 Β7 五、發明説明(μ 鉻濺射: 1 4 ”濺射機 電力:5-8千瓦 線速度:1.8至2.8呎/分 鉻厚度:Ι,ΟΟΟΑ,18微米銅面 5微米鋼面未施加鉻 實例3 將聚醯亞胺膜之二面鍍銅(lg微米鋼/5〇微米聚醯亞胺膜 /5微米鋼;此一產品係Gould電子公司製造之G〇uld®flex產 品糸列之一)並如下處理: 穩定處理: 5克/升Ci:(以Cr03,表示) 浴pH : 2·0 浴溫度:25t 浸入處理 然後如下將鉻施塗於穩定層: 鉻濺射: 1 4 ”濺射機 電力:5-8千瓦 線速度:1.8-2.8呎/分 鉻厚度:1,000 A,18微米銅面 實例4 將INVAR®電鍍8微米鋼(8微米銅/1.5密爾INVAR®/ 8微米 鋼)之兩面以穩定層如下處理: -14- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 503680 A7
穩定處理: (^^克/升鋅山抑表示卜㈣克/升心㈤⑽厂表 示)、"克 / 升 Na2S04 浴 pH : 5.0 浴溫度:42。(: 電流密度:2 5安培/ft2 電鏐時間:3-4秒 然後如下將鉻施塗於穩定層: 鉻濺射: 1 4 ”濺射機 電力:5-8千瓦 線速度:1.8至2·8呎/分 鉻厚度:1,000 A,8微米鋼面 前述說明及實例係揭示將金屬黏附塗層施塗於習知鋼箔 片之方法。.本發明在施塗電阻材料層於銅箔上以供用作為 印刷電路板之電阻箔上也有很有利的用途。 圖5係反面處理之鋼箔之剖面圖。“反面處理之銅箱,,一詞 在本技藝係習用以指經處理以在鋼之亮面產生微球粒之鋼 羯°微球粒係供作為黏附促進層◎在銅箔之亮面或霧面形 成球粒作為黏附促進層己為所習知,其本身不構成本發明 之一部份。‘ 在圖5-7所示具體例中,具霧面116及亮面114之基本鋼箔 112係經處理而在亮面114加上微球粒115。反面處理之銅箔 112 (國5看得最清楚)亦進行與圖1所示相同之過程。在這 -15-本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 503680 A7 ____ B7 五、發明説明(13 ) 一方面,銅落Π2進行如上所述清潔過程2〇及沖洗過程3〇 以自銅箔112之表面除去氧化銅層。在清潔過程2。及沖洗過 程30之後,銅箱112即進行穩定過程4〇,其_穩定層149係 施加於銅fl 1 12之每一面。 上有穩定層149之鋼猪112然後經過烘乾過程6〇,如圖丨概 略所述。施加穩定層149之後,即將電阻金屬179真空沉積 於銅箔112之一穩定表面上。在圖7所示具體例中,電阻金 屬179係施加至銅揭112之穩定霧面116。鎳與鉻或鎳與鉻與 鋁及矽作為填補劑之合金己為形成電阻鋼箔所知a其他種 類之金屬及導電材料,較佳具體積電阻率大於鋼者,也可 用於形成電阻層179。以實例而非限制言之,鉑、钽、鉻、 石夕化鉻、氮化鈕及氧化鈕皆可用以形成電阻層179。 根據本發明,電阻材料179係藉真空沉積技術如濺射、化 學蒸氣沉積、電子束沉積、熱蒸發、離子電錢(經由基材) 或此等方法之組合直接施加於穩定層复49之上。在圖1所示 具體例中,概略顯示濺射過程7〇。沉積過程較佳將電阻合 金層ί79施加於鋼H 112之霧面116以便具有介於約5〇 1,000 A、更佳介於約10〇 Α與500 Α之間的厚度。 以下實例係為例證本發明之用而提供。除非另有註明, 否則在以下實例中及整個說明書及申請專利範圍中,全部 份數及百分比皆以重量計、全部溫度皆為攝氏度及全部壓 力皆為大氣壓。 實例5 將反面處理電沉積銅箔丨2微米之兩面以穩定層如下預處 -16- 本紙張尺歧财目目轉準(CNS)从祕(21()χ 297公潑) 503680 A7 B7 五、發明説明(14 ) 理: 穩定處理:
0.53克/升鋅(ZnS04表示)、0.6克/升Cr (以Cr03,表 示)、1 1 克 / 升 Na2S04 浴pH : 5.0 浴溫度:42°C 電流密度:8-15安培/ft2,霧面 2-2.5安培/ft2,亮面 電鍍時間:亮面:6 - 8秒 霧面:3 - 4秒 然後將由80%鎳(Ni)及20 %鉻(Cr)構成之合金如下施塗 於穩定層:
Ni/Cr合金濺射: ............. 1 4 ”濺射機 電力:5 - 8千瓦 線速度:1.4至2.2呎/分
Ni/Cr合金厚度:約100 A,霧面 片電阻率:約160 Ω (歐姆)/平方 實例6 將反面處理電沉積銅箔12微米之兩面以穩定層如下預處 理: 穩定處理: .......... 0.53克/升鋅(ZnS04表示)、0.6克/升Cr (以Cr03,表 示)、1 1 克 / 升 Na2S04 -17- 本紙張尺度適用中國國家標準(CMS) A4規格(210 X 297公釐) 503680 A7 ____ B7 五、發明説明1 "~ v 15 / 浴 pH : 5.0 浴溫度:42^ 電&德、度* 8-15安培/ ft2,霧面 2-2·5安培/ft2,亮面 電鍍時間:亮面:6 - 8秒 霧面:3 - 4秒 然後將由56%鎳(Ni)、38%鉻(〇r)及2%鋁(A1)及4〇/❹矽 (S i)作為填補劑構成之合金如下施塗於穩定層:
Ni/Cr/Al/Si合金濺射: 1 4 ”濺射機 電力:5-8千瓦 線速度:1.4至2.2呎/分 Ni/Cr/Al/Si合金厚度:約ιοοΑ,霧面 片電阻率:約290 Ω (歐姆)/平方 圖8係由圖7所示電阻箔形成之電阻元件2〇〇之概略圖。如 其他圖式一般,為說明之用,電阻元件200之各個組件皆誇 大。圖7所示電阻箔之霧面係籍習知技術層合而黏附於基材 202 β利用習知掩蔽及餘刻技術,沿基材202表面之一部份 形成示蹤線212。將示縱線212之一部份鋼層in除去,僅在 基材202上留下電阻層179。電阻層179之曝露部份即在銅層 112之分離二端之間形成之電導體。因為形成電阻層之金屬 一般具小於銅層112之導電度,故其基本上係作為銅層112 分離二端之間的電阻體。熟諸本技藝者應了解,電阻層179 之厚度及寬度以及銅層112二端間之距離,亦即示縱線212 -18- 本紙張尺度適用中國國家標準(CNS) Α4規格(210X 297公釐) 503680 A7 B7 16 五、發明説明( 所形成之間隙之長度,將影響電阻元件2⑽之電阻。 圖9係一曲線圖,顯示電阻層179之厚度與上述鎳⑺丨)及 絡(C 〇合金之鋼箔組份之電阻率之間的闕係^如曲根圖所 示,電阻層17 9之厚度增加,總片電阻率即下降。 圖5 - 7顯示霧面具有電阻層之反面處理鋼箔α圖1〇_12八顯 不其他種類之|阻箔可自其他種類之穩定鋼箔形成。 圖1 0顯示自反面處理銅箔形成之電阻箔,與圖7相似,在二 鋼箔112亮面114上之微球粒115上面沉積有電阻層179。 一 圖1 1顯示未經微球粒表面處理之習知電形成鋼箔丨丨2。銅 揭係經穩定(層149),且在其亮面114沉積有電阻層179。 圖12及12A顯示霧面Π6經微球粒表面處理之習知電形成 鋼箔112。銅箔係如上所述穩定,而電阻層ι79則蒸氣沉積 於穩定霧面116上。 前述說明係本發明之特定具體例。應注意的是,此一具: 體例係為僅供例證之用而說明,且熟諳本技藝者在不偏離 本發明之精神及範圍下可實行多種變化及修正,例如,若 過程1 0係電形成過程(初鍊鋼形成並導入製程線1 〇)之延 伸,則可不需要清潔過程2 0。再者,雖然前述過程己就銅 箔加以說明,但該過程也可用於施加金屬如鉻於經銅塗覆 之聚合物之鋼上。希望全部此等修正及變化都應包括,因 為彼等都在所申請專利的本發明或其相當物之範圍内。 •19-本紙張尺度適用中國國家標準(CNS) A4规格(210 X 297公釐)
Claims (1)
- 503680 A8B8C8D8 六、申請專利範圍 1· 一種施加電阻材料於鋼層上之方法,包含以下步驟: {請先閱讀背面之注意事項再填寫本頁) 籍由施加穩定層使銅層之表面穩定化,該穩定層係由 氧化鋅、氧化鉻、鎳、氧化鎳或其組合所構成且具厚度 介於約5 A與多70 A之間;及 將電阻材料蒸氣沉積於該銅層之穩定表面上。 2·如申請專利範圍第1項之方法,其中該電阻材料係自鉻 (C r) /鎳(N i )合金、鉑、矽化鉻、钽、氮化钽及氧化鈕 所組成之族群中所選出。 3·如申請專利範圍第2項之方法,其中該電阻材料係由主 要由鉻(Cr)及鎳(Ni)形成之合金所構成。 4·如申請專利範圍第3項之方法,其中該穩定層係由氧化 鋅與氧化鉻之組合所構成。 5·如申請專利範圍第4項之方法,其中該鋼箔係電形成且 具霧面及亮面。 6.如申請專利範圍第5項之方法,其中該銅落係具有施加 微球粒處理之亮面及霧面的反面處理銅箔’及該鉻/錄 合金係施加於該霧面α 7·如申請專利範圍第3項之方法,其中該穩定層係由氧化 經濟部智慧財產局員Η消費合作社印製 絡構成。 8.如申請專利範圍第7項之方法,其中該合金係由約8〇重 量%鎳(旧)及約20重量%鉻(<:1:)構成。 9·如申請專利範圍第7項之方法,其中該合金係由約56重 •量%鎳(Ni),約38重量%鉻((:3:)及由約2重量%鋁(八1} 及約4重量%矽(Si)構成之填補劑構成。 -20- 本紙張尺度適用中關家標準(CNS)A4規格(21() x 297公釐) 503680 A8B8C8DB 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 10·如中請專利||圍第i項之方法,其中該鋼猪具平滑面而 遽電阻材料即施加於該平滑面。 11. 一種片材,其係由以下構成: 具有霧面及經處理而其上形成微球粒之經處理亮面之 反面處理鋼箱; 該銅羯一面之穩定層,該穩定層係由具有厚度介於約 5 A與約70 A之間的氧化鋅、氧化鉻或其組合所構成;及 ‘該穩定層上之蒸氣沉積電阻材料。 12. 如申請專利範圍第U項之片材,其中該穩定層係在該銅 ϋ之霧面。 13·如申請專利範圍第u項之片材,其中該穩定層係在該銅 箔之亮面® 14·如申明專利範圍第丨〗項之片材,其中該電阻材料係自絡 (C〇/鎳(Ni)合金、|白、石夕化鉻、麵、氮化鈕及氧化叙 所組成之族群中所選出。 15.如申請專利範圍第14項之片材,其中該電阻材料係主要 由鉻(C〇及鎳(Ni)所構成之合金。 16·如申請專利範圍第15項之片材,其中該穩定層係由氧化 鋅及氧化鉻所構成。 Π.如申請專利範圍第15項之片材,其中該穩定層係由氧化 絡所構成。 18·如申請專利範圍第14項之片材,其中該氧化鉻之厚度 .約 50 A至約 1,〇〇〇 A。 19·如申請專利範圍第14項之片材,其中該合金係由約 <請先閱讀背面之注意事項再填寫本頁) 裝 ---丨丨訂ί — -21 - 503680 A8 B8 六、申請專利範圍 重量%鎳(Ni)及約20重量%鉻((:1*)構成。 20·如申請專利範圍第14項之片材,其中該合金由約56重 量%鎳(N i),约3 8重量%鉻(C r)及由約2重量%鋁(A 1) 及約4重量%矽(s i)構成之填補劑構成。 (請先閱讀背面之注意事項再填寫本頁) ill! · I I I I 經濟部智慧財產局員工消費合作社印製 _-22- 本紙張尺度適用中國國家標準(CNS)A4規袼(210 X 297公釐)
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-
2000
- 2000-07-31 US US09/628,766 patent/US6489035B1/en not_active Expired - Lifetime
-
2001
- 2001-07-11 CA CA002352929A patent/CA2352929C/en not_active Expired - Lifetime
- 2001-07-12 AT AT01202674T patent/ATE312954T1/de not_active IP Right Cessation
- 2001-07-12 DE DE60115782T patent/DE60115782T2/de not_active Expired - Lifetime
- 2001-07-12 EP EP01202674A patent/EP1178128B1/en not_active Expired - Lifetime
- 2001-07-13 KR KR10-2001-0042385A patent/KR100416050B1/ko active IP Right Grant
- 2001-07-18 JP JP2001217398A patent/JP3452557B2/ja not_active Expired - Lifetime
- 2001-07-26 TW TW090118329A patent/TW503680B/zh not_active IP Right Cessation
- 2001-07-30 CN CNB011235357A patent/CN100465341C/zh not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI665339B (zh) * | 2018-01-05 | 2019-07-11 | 長春石油化學股份有限公司 | 用於包括銅箔之高速印刷電路板產品之表面處理銅箔及製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE60115782D1 (de) | 2006-01-19 |
ATE312954T1 (de) | 2005-12-15 |
DE60115782T2 (de) | 2006-08-10 |
CN100465341C (zh) | 2009-03-04 |
EP1178128A1 (en) | 2002-02-06 |
JP3452557B2 (ja) | 2003-09-29 |
US6489035B1 (en) | 2002-12-03 |
CA2352929A1 (en) | 2002-01-31 |
CN1362538A (zh) | 2002-08-07 |
EP1178128B1 (en) | 2005-12-14 |
KR20020011072A (ko) | 2002-02-07 |
KR100416050B1 (ko) | 2004-01-24 |
CA2352929C (en) | 2004-09-14 |
JP2002115082A (ja) | 2002-04-19 |
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