TW498420B - Hot plate and manufacture method of semiconductor device - Google Patents
Hot plate and manufacture method of semiconductor device Download PDFInfo
- Publication number
- TW498420B TW498420B TW090116747A TW90116747A TW498420B TW 498420 B TW498420 B TW 498420B TW 090116747 A TW090116747 A TW 090116747A TW 90116747 A TW90116747 A TW 90116747A TW 498420 B TW498420 B TW 498420B
- Authority
- TW
- Taiwan
- Prior art keywords
- fixed
- electrode
- hot plate
- aforementioned
- plate body
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims description 52
- 230000003068 static effect Effects 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000005611 electricity Effects 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims 5
- 239000004020 conductor Substances 0.000 claims 4
- 238000001514 detection method Methods 0.000 claims 3
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 235000014676 Phragmites communis Nutrition 0.000 claims 1
- 230000020169 heat generation Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 73
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000003379 elimination reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 230000002123 temporal effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 210000003195 fascia Anatomy 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 241000255925 Diptera Species 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Surface Heating Bodies (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000208355A JP2002026113A (ja) | 2000-07-10 | 2000-07-10 | ホットプレート及び半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW498420B true TW498420B (en) | 2002-08-11 |
Family
ID=18704947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090116747A TW498420B (en) | 2000-07-10 | 2001-07-09 | Hot plate and manufacture method of semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6500686B2 (enExample) |
| JP (1) | JP2002026113A (enExample) |
| KR (1) | KR100437977B1 (enExample) |
| CN (1) | CN1197125C (enExample) |
| TW (1) | TW498420B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI456688B (zh) * | 2011-08-05 | 2014-10-11 | Advanced Micro Fab Equip Inc | 一種易於釋放晶片的靜電吸盤結構及方法 |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7479456B2 (en) | 2004-08-26 | 2009-01-20 | Applied Materials, Inc. | Gasless high voltage high contact force wafer contact-cooling electrostatic chuck |
| JP2003115442A (ja) * | 2001-10-04 | 2003-04-18 | Nikon Corp | 荷電粒子線露光装置におけるレチクル又はウエハの静電チャック方法 |
| US6734117B2 (en) * | 2002-03-12 | 2004-05-11 | Nikon Corporation | Periodic clamping method and apparatus to reduce thermal stress in a wafer |
| JP2004047912A (ja) * | 2002-07-16 | 2004-02-12 | Ulvac Japan Ltd | 吸着装置及び真空処理装置 |
| KR100573351B1 (ko) * | 2002-12-26 | 2006-04-25 | 미츠비시 쥬고교 가부시키가이샤 | 정전 척 |
| US7430104B2 (en) * | 2003-03-11 | 2008-09-30 | Appiled Materials, Inc. | Electrostatic chuck for wafer metrology and inspection equipment |
| US20040229477A1 (en) * | 2003-05-13 | 2004-11-18 | Daniel Timothy J. | Apparatus and method for producing a <111> orientation aluminum film for an integrated circuit device |
| JP4684222B2 (ja) * | 2004-03-19 | 2011-05-18 | 株式会社クリエイティブ テクノロジー | 双極型静電チャック |
| CN100470755C (zh) * | 2004-03-19 | 2009-03-18 | 创意科技股份有限公司 | 双极型静电吸盘 |
| US7457097B2 (en) * | 2004-07-27 | 2008-11-25 | International Business Machines Corporation | Pressure assisted wafer holding apparatus and control method |
| JP4744112B2 (ja) * | 2004-08-23 | 2011-08-10 | 大日本スクリーン製造株式会社 | 熱処理装置 |
| US7666464B2 (en) | 2004-10-23 | 2010-02-23 | Applied Materials, Inc. | RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor |
| CN101218668B (zh) * | 2005-07-08 | 2010-11-03 | 创意科技股份有限公司 | 静电吸盘以及静电吸盘用的电极片 |
| KR101312292B1 (ko) * | 2006-12-11 | 2013-09-27 | 엘아이지에이디피 주식회사 | 플라즈마 처리장치의 기판 파손 방지장치 및 그 방법 |
| KR101295776B1 (ko) * | 2007-08-02 | 2013-08-12 | 삼성전자주식회사 | 직류 및 교류 전압들을 교대로 사용하는 웨이퍼의 디척킹방법 및 이를 채택하는 반도체 소자의 제조 장치 |
| CN101916738B (zh) * | 2010-07-08 | 2013-07-17 | 中微半导体设备(上海)有限公司 | 一种易于释放晶片的静电吸盘结构及方法 |
| US8840754B2 (en) * | 2010-09-17 | 2014-09-23 | Lam Research Corporation | Polar regions for electrostatic de-chucking with lift pins |
| US20120227886A1 (en) * | 2011-03-10 | 2012-09-13 | Taipei Semiconductor Manufacturing Company, Ltd. | Substrate Assembly Carrier Using Electrostatic Force |
| JP5781803B2 (ja) * | 2011-03-30 | 2015-09-24 | 東京エレクトロン株式会社 | 温度制御方法及びプラズマ処理システム |
| JP2012248613A (ja) * | 2011-05-26 | 2012-12-13 | Elpida Memory Inc | 半導体装置の製造方法 |
| JP6202720B2 (ja) * | 2013-03-29 | 2017-09-27 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| DE102013113048A1 (de) * | 2013-11-26 | 2015-05-28 | Aixtron Se | Heizvorrichtung für einen Suszeptor eines CVD-Reaktors |
| US9570272B2 (en) * | 2015-03-31 | 2017-02-14 | Panasonic Intellectual Property Management Co., Ltd. | Plasma processing apparatus and plasma processing method |
| US20170047867A1 (en) * | 2015-08-12 | 2017-02-16 | Applied Materials, Inc. | Electrostatic chuck with electrostatic fluid seal for containing backside gas |
| JP6924196B2 (ja) * | 2016-01-19 | 2021-08-25 | インテヴァック インコーポレイテッド | 基板製造用のパターンチャック |
| CN105919721A (zh) * | 2016-04-22 | 2016-09-07 | 济南圣泉集团股份有限公司 | 一种发热贴 |
| KR20180032893A (ko) * | 2016-09-23 | 2018-04-02 | 고등기술연구원연구조합 | 가변식 압력검출매트 |
| KR102644272B1 (ko) * | 2016-10-31 | 2024-03-06 | 삼성전자주식회사 | 정전척 어셈블리 |
| US10497667B2 (en) | 2017-09-26 | 2019-12-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for bond wave propagation control |
| JP6627936B1 (ja) * | 2018-08-30 | 2020-01-08 | 住友大阪セメント株式会社 | 静電チャック装置および静電チャック装置の製造方法 |
| KR102085446B1 (ko) * | 2018-09-21 | 2020-03-05 | 캐논 톡키 가부시키가이샤 | 정전척 시스템, 성막 장치, 피흡착체 분리방법, 성막 방법 및 전자 디바이스의 제조방법 |
| KR102650613B1 (ko) * | 2018-10-30 | 2024-03-21 | 캐논 톡키 가부시키가이샤 | 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법 |
| KR102661368B1 (ko) * | 2018-12-07 | 2024-04-25 | 캐논 톡키 가부시키가이샤 | 정전척, 정전척 시스템, 성막 장치, 흡착 방법, 성막 방법 및 전자 디바이스의 제조 방법 |
| KR102497965B1 (ko) * | 2019-03-18 | 2023-02-08 | 엔지케이 인슐레이터 엘티디 | 정전 척 |
| US11417557B2 (en) * | 2020-12-15 | 2022-08-16 | Entegris, Inc. | Spiraling polyphase electrodes for electrostatic chuck |
| JP7585935B2 (ja) * | 2021-03-30 | 2024-11-19 | 住友大阪セメント株式会社 | 静電チャック部材及び静電チャック装置 |
| US11929278B2 (en) * | 2021-05-19 | 2024-03-12 | Applied Materials, Inc. | Low impedance current path for edge non-uniformity tuning |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03180049A (ja) * | 1989-12-08 | 1991-08-06 | Sumitomo Electric Ind Ltd | 半導体装置のピックアップ方法 |
| US5467249A (en) * | 1993-12-20 | 1995-11-14 | International Business Machines Corporation | Electrostatic chuck with reference electrode |
| US5997962A (en) | 1995-06-30 | 1999-12-07 | Tokyo Electron Limited | Plasma process utilizing an electrostatic chuck |
| JPH09129716A (ja) | 1995-11-02 | 1997-05-16 | Hitachi Ltd | 静電吸着装置とその製造方法、ウエハ処理方法 |
| JPH10151516A (ja) * | 1996-11-22 | 1998-06-09 | Nikon Corp | 研磨皿への溝加工方法 |
| US5880923A (en) * | 1997-06-09 | 1999-03-09 | Applied Materials Inc. | Method and apparatus for improved retention of a semiconductor wafer within a semiconductor wafer processing system |
| JP2973982B2 (ja) * | 1997-07-18 | 1999-11-08 | 日本電気株式会社 | 電子部品の成形端子の画像検査方法及びチップ型電子部品 |
-
2000
- 2000-07-10 JP JP2000208355A patent/JP2002026113A/ja active Pending
-
2001
- 2001-07-09 TW TW090116747A patent/TW498420B/zh not_active IP Right Cessation
- 2001-07-10 CN CNB011259523A patent/CN1197125C/zh not_active Expired - Fee Related
- 2001-07-10 US US09/901,029 patent/US6500686B2/en not_active Expired - Fee Related
- 2001-07-10 KR KR10-2001-0041066A patent/KR100437977B1/ko not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI456688B (zh) * | 2011-08-05 | 2014-10-11 | Advanced Micro Fab Equip Inc | 一種易於釋放晶片的靜電吸盤結構及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6500686B2 (en) | 2002-12-31 |
| KR100437977B1 (ko) | 2004-07-02 |
| CN1335640A (zh) | 2002-02-13 |
| KR20020005986A (ko) | 2002-01-18 |
| US20020006680A1 (en) | 2002-01-17 |
| JP2002026113A (ja) | 2002-01-25 |
| CN1197125C (zh) | 2005-04-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |