CN1197125C - 热板及半导体装置的制造方法 - Google Patents

热板及半导体装置的制造方法 Download PDF

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Publication number
CN1197125C
CN1197125C CNB011259523A CN01125952A CN1197125C CN 1197125 C CN1197125 C CN 1197125C CN B011259523 A CNB011259523 A CN B011259523A CN 01125952 A CN01125952 A CN 01125952A CN 1197125 C CN1197125 C CN 1197125C
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CN
China
Prior art keywords
hot plate
main body
electrostatic chuck
electrode
mentioned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB011259523A
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English (en)
Chinese (zh)
Other versions
CN1335640A (zh
Inventor
坚田富夫
和田纯一
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Toshiba Corp
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Toshiba Corp
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Publication date
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Publication of CN1335640A publication Critical patent/CN1335640A/zh
Application granted granted Critical
Publication of CN1197125C publication Critical patent/CN1197125C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Surface Heating Bodies (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CNB011259523A 2000-07-10 2001-07-10 热板及半导体装置的制造方法 Expired - Fee Related CN1197125C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000208355A JP2002026113A (ja) 2000-07-10 2000-07-10 ホットプレート及び半導体装置の製造方法
JP208355/2000 2000-07-10

Publications (2)

Publication Number Publication Date
CN1335640A CN1335640A (zh) 2002-02-13
CN1197125C true CN1197125C (zh) 2005-04-13

Family

ID=18704947

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB011259523A Expired - Fee Related CN1197125C (zh) 2000-07-10 2001-07-10 热板及半导体装置的制造方法

Country Status (5)

Country Link
US (1) US6500686B2 (enExample)
JP (1) JP2002026113A (enExample)
KR (1) KR100437977B1 (enExample)
CN (1) CN1197125C (enExample)
TW (1) TW498420B (enExample)

Families Citing this family (38)

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US6734117B2 (en) * 2002-03-12 2004-05-11 Nikon Corporation Periodic clamping method and apparatus to reduce thermal stress in a wafer
JP2004047912A (ja) * 2002-07-16 2004-02-12 Ulvac Japan Ltd 吸着装置及び真空処理装置
KR100573351B1 (ko) * 2002-12-26 2006-04-25 미츠비시 쥬고교 가부시키가이샤 정전 척
US7430104B2 (en) * 2003-03-11 2008-09-30 Appiled Materials, Inc. Electrostatic chuck for wafer metrology and inspection equipment
US20040229477A1 (en) * 2003-05-13 2004-11-18 Daniel Timothy J. Apparatus and method for producing a <111> orientation aluminum film for an integrated circuit device
JP4684222B2 (ja) * 2004-03-19 2011-05-18 株式会社クリエイティブ テクノロジー 双極型静電チャック
CN100470755C (zh) * 2004-03-19 2009-03-18 创意科技股份有限公司 双极型静电吸盘
US7457097B2 (en) * 2004-07-27 2008-11-25 International Business Machines Corporation Pressure assisted wafer holding apparatus and control method
JP4744112B2 (ja) * 2004-08-23 2011-08-10 大日本スクリーン製造株式会社 熱処理装置
US7666464B2 (en) 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
CN101218668B (zh) * 2005-07-08 2010-11-03 创意科技股份有限公司 静电吸盘以及静电吸盘用的电极片
KR101312292B1 (ko) * 2006-12-11 2013-09-27 엘아이지에이디피 주식회사 플라즈마 처리장치의 기판 파손 방지장치 및 그 방법
KR101295776B1 (ko) * 2007-08-02 2013-08-12 삼성전자주식회사 직류 및 교류 전압들을 교대로 사용하는 웨이퍼의 디척킹방법 및 이를 채택하는 반도체 소자의 제조 장치
CN101916738B (zh) * 2010-07-08 2013-07-17 中微半导体设备(上海)有限公司 一种易于释放晶片的静电吸盘结构及方法
US8840754B2 (en) * 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
US20120227886A1 (en) * 2011-03-10 2012-09-13 Taipei Semiconductor Manufacturing Company, Ltd. Substrate Assembly Carrier Using Electrostatic Force
JP5781803B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 温度制御方法及びプラズマ処理システム
JP2012248613A (ja) * 2011-05-26 2012-12-13 Elpida Memory Inc 半導体装置の製造方法
TWI456688B (zh) * 2011-08-05 2014-10-11 Advanced Micro Fab Equip Inc 一種易於釋放晶片的靜電吸盤結構及方法
JP6202720B2 (ja) * 2013-03-29 2017-09-27 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
DE102013113048A1 (de) * 2013-11-26 2015-05-28 Aixtron Se Heizvorrichtung für einen Suszeptor eines CVD-Reaktors
US9570272B2 (en) * 2015-03-31 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus and plasma processing method
US20170047867A1 (en) * 2015-08-12 2017-02-16 Applied Materials, Inc. Electrostatic chuck with electrostatic fluid seal for containing backside gas
JP6924196B2 (ja) * 2016-01-19 2021-08-25 インテヴァック インコーポレイテッド 基板製造用のパターンチャック
CN105919721A (zh) * 2016-04-22 2016-09-07 济南圣泉集团股份有限公司 一种发热贴
KR20180032893A (ko) * 2016-09-23 2018-04-02 고등기술연구원연구조합 가변식 압력검출매트
KR102644272B1 (ko) * 2016-10-31 2024-03-06 삼성전자주식회사 정전척 어셈블리
US10497667B2 (en) 2017-09-26 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for bond wave propagation control
JP6627936B1 (ja) * 2018-08-30 2020-01-08 住友大阪セメント株式会社 静電チャック装置および静電チャック装置の製造方法
KR102085446B1 (ko) * 2018-09-21 2020-03-05 캐논 톡키 가부시키가이샤 정전척 시스템, 성막 장치, 피흡착체 분리방법, 성막 방법 및 전자 디바이스의 제조방법
KR102650613B1 (ko) * 2018-10-30 2024-03-21 캐논 톡키 가부시키가이샤 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
KR102661368B1 (ko) * 2018-12-07 2024-04-25 캐논 톡키 가부시키가이샤 정전척, 정전척 시스템, 성막 장치, 흡착 방법, 성막 방법 및 전자 디바이스의 제조 방법
KR102497965B1 (ko) * 2019-03-18 2023-02-08 엔지케이 인슐레이터 엘티디 정전 척
US11417557B2 (en) * 2020-12-15 2022-08-16 Entegris, Inc. Spiraling polyphase electrodes for electrostatic chuck
JP7585935B2 (ja) * 2021-03-30 2024-11-19 住友大阪セメント株式会社 静電チャック部材及び静電チャック装置
US11929278B2 (en) * 2021-05-19 2024-03-12 Applied Materials, Inc. Low impedance current path for edge non-uniformity tuning

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03180049A (ja) * 1989-12-08 1991-08-06 Sumitomo Electric Ind Ltd 半導体装置のピックアップ方法
US5467249A (en) * 1993-12-20 1995-11-14 International Business Machines Corporation Electrostatic chuck with reference electrode
US5997962A (en) 1995-06-30 1999-12-07 Tokyo Electron Limited Plasma process utilizing an electrostatic chuck
JPH09129716A (ja) 1995-11-02 1997-05-16 Hitachi Ltd 静電吸着装置とその製造方法、ウエハ処理方法
JPH10151516A (ja) * 1996-11-22 1998-06-09 Nikon Corp 研磨皿への溝加工方法
US5880923A (en) * 1997-06-09 1999-03-09 Applied Materials Inc. Method and apparatus for improved retention of a semiconductor wafer within a semiconductor wafer processing system
JP2973982B2 (ja) * 1997-07-18 1999-11-08 日本電気株式会社 電子部品の成形端子の画像検査方法及びチップ型電子部品

Also Published As

Publication number Publication date
US6500686B2 (en) 2002-12-31
KR100437977B1 (ko) 2004-07-02
CN1335640A (zh) 2002-02-13
KR20020005986A (ko) 2002-01-18
US20020006680A1 (en) 2002-01-17
JP2002026113A (ja) 2002-01-25
TW498420B (en) 2002-08-11

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Granted publication date: 20050413