TW486822B - An arrangement in a power MOSFET - Google Patents

An arrangement in a power MOSFET Download PDF

Info

Publication number
TW486822B
TW486822B TW089122546A TW89122546A TW486822B TW 486822 B TW486822 B TW 486822B TW 089122546 A TW089122546 A TW 089122546A TW 89122546 A TW89122546 A TW 89122546A TW 486822 B TW486822 B TW 486822B
Authority
TW
Taiwan
Prior art keywords
transistor
different
scope
configuration
sections
Prior art date
Application number
TW089122546A
Other languages
English (en)
Inventor
Thomas Moller
Nils Af Ekenstam
Jan Johansson
Timothy Ballard
Gary Lopes
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Application granted granted Critical
Publication of TW486822B publication Critical patent/TW486822B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H01L29/4991—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material comprising an air gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Description

486822 A7 經濟部智慧財產局員工消費合作社印製
五、發明說明（1 發明領域 本發月係與功率金氧半場效電晶體相關，更特定地盥一 種改善該電晶體的線性及效率的配置有關。 發明背景 έ功率金氧半場效電晶體係由-直重複自身的内部結構所 成因此，功率金氧半場效電晶體可以視爲複數個並聯 連接之小電晶體區段。 功率金氧半場效電晶體係以源極連接到地且其没極係連 結到正供應電壓而運作。 在其閘電極的正電壓超過電晶體的臨限電壓時，η型的反 向區域將會在其閘極底下形成，允許電流在其没極和源極 之間通過。 習慣上，臨限電壓需要在整個電晶體裡是相同的，使得 在電晶體區段共享的電流是相等的且當電晶體全力運作時 達到最大的效率。那就是説所有的電晶體區段都有相同的 臨限電壓。 例如，功率橫向雙重擴散金氧半場效電晶體（ld,m〇㈨在 AB級別運作時’稍微大於臨限電壓的閘直流偏壓ς壓將會 導致靜止没極電流流過電晶體。 靜止（qmescent)汲極電流對於在全力輸出功率時的所有汲 極電流消耗來説是相對小的貢獻者，通常係在1〇%左右且因 此對整個效率幾乎沒有影響。 在低層次的輸出功率，即所謂的支援情況（backed_〇ff C〇ndltlon)，上述之情況就不再成立。此時之靜止電流對所 -4- 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 丨.1丨丨h------丨-)裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) （
發明說明（ 祕電流消耗是重要的，或者是主要的貢獻者。 在橫向雙重擴散金氧半場效電晶體中，當輸出功率減少 (請先閱讀背面之注音？事項再聲寫本頁) 時、.泉I·生將會有重大的改善，其亦爲支援模式的運作所 有興趣之處。 線性效能也是閘極直流偏壓強力的功能。 在給定輸出功率層次時存在最佳靜纽極電流値，其導 致最佳線性效能。芸艮了 、 、 馬了改善效率而進一步降低靜止汲極 電流則將會降低線性。 發明簡述 本發明的目的是在支援操作情況且維持最高點功率能力 T，改善功率金氧半場效電晶體中的效率及線性。 此係由根據本發明（至少_組該電晶體區段具有跟其他 剩下的電晶體區段不同的臨限電壓而達成。 因此，臨限電壓在整個電晶體都經過分級。 猎此，t多的電晶體，換言之，實際上是更多的電晶體 區段，在其閘極的輸入電壓增加時，將會變成主動（actlve) 的’允許在支援操作情況且維持最高點功率能力下，改善 效率和/或線性。 經濟部智慧財產局員工消費合作社印製 圖式簡述 本發明麥考增附的圖式將有詳細的説明，其中圖丨是與根 據本發明的功率金氧半場效電晶體的兩個電晶體區段之剖 面圖。 發明詳述 圖1是與根據本發明的橫向雙重擴散金氧半場效電晶體的 5- 本紙張尺度適用中國國家標準（CNS)A4規格m〇 X 297公釐） 486822
五、發明說明（ 兩個相鄰電晶體區段之剖面圖。 然而，本發明並不只限制人 曰Μ ;檢向雙重擴散金氧半場效電 曰田體。 (請先閱讀背面之注意事項再填寫本頁)
就其本身而言已知的方式，電晶體係建造在#基材W ，而以晶層2在其一邊且源極金屬層(未顯示)在另外一邊。 〆源極區域4和汲極區域，夂音 合郁包括V汲極接觸區域3，兩 邊都由77-偏移區域5所包圍，你产.„ ^ ,
图係在Θ層2提供。汲極金手指D 係在/?+没極接觸區域3的上面提供。 間極手指G在，層2上的及接金手指〇的兩邊，嵌入於介 電層7, Ρ-井6係在每個閘手指7之下，從其源極邊橫向擴 散。 深擴散，區域8允許電流從„+源極區域4到〆基材丨中流過 ，而藉由夾鉗（clamps) 9裝置而有最少的壓降，換言之即爲 金屬接觸，其使β源極區域4和〆區域8短路。 :線· 如介紹部分所指示，電晶體區段的臨限電壓需要在整個 電晶體裡是相同的，使得在電晶體區段共享的電流是相等 的且當電晶體全力運作時達到最大的效率。 經濟部智慧財產局員工消費合作社印製 然而，也如上所述，當電晶體區段的臨限電壓在^‘個電晶 體裡是相同時，當電晶體在所謂的支援情況下操作時，換 吕之，在其1分貝（dB)壓縮點（compressi〇n p〇int)之下時，效 率和線性並不是最佳化的。 根據本發明，電晶體區段的臨限電壓會經由整個電晶體 而逐漸地調整。實際上，電晶體區段的群組，會有不同的除 限電壓。這些群組並不需要位於一個且相同的晶粒（dK)上 / -6- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 五、發明說明（4 ) ，而可以位於不同相連的晶粒上。 在運作時，符合本發明的電晶體之閘極直流偏壓將會調 整而允許靜止汲極電流只流過有最低臨限電壓之電晶體的 部分。 當輸入信號的電壓增加，更多的電晶體，即更多的電晶體 區段，將會變成主動的，並允許在支援操作情況且維持最 高點功率能力下改善效率和/或線性。 檢向雙重擴散金氧半場效電晶體區段的臨限電壓由閘氧 化層的厚度，閘極之下的硼（b〇r〇n)濃度和閘手指材料之選 擇而決定。 有多種方式可以達成在電晶體中分級的臨限電壓。 最實際達成分級的臨限電壓之選項是變化p-井的不純物掺 雜。 使用一光罩層以定義區域是通常的方式，其中p-井佈植引 進矽中，之後作一次硼佈植，隨後爲鎔爐的一驅進（drive-in)週期。 爲了達成分級的臨限電壓，也可能使用多種P-井的佈植光 , 罩和 -對不同的電晶體區段使用不同P-井佈植劑量或佈植能量或 佈植傾斜角度，之後仍然經過共同的鎔爐驅進週期。 -每次使用相同的P-井佈植劑量但是不同之隨後驅進週期或 -使用上述方法的組合。 其他在電晶體中達成分級的臨限電壓之選項可能是 -使用上述相同的方法變化在電晶體區段之間源極橫向擴 ---:----:--------------訂--------—線· (請先閱讀背面之注意事項再填寫本頁)
486822 A7 B7_ :___ 五、發明說明（5 ) 散的量， -在閘極形成前引進不同程度的臨限調整佈植， -使用多晶矽閘手指和不同的雜質摻雜在電晶體區段之間， 或甚至使用不同的閘極材料或 -麦化在電晶體區段間的閘氧化層厚度。 依據正確的製程設定，更多選項應該對於任何熟悉此技 藝的人士來説是可用的。 假如兩個或更多的不同臨限電壓的電晶體晶粒一起在相 同的包裝上組合，該基本原則仍然有效。 範例： 藉由凋整，例如，p-井佈植傾斜角度，臨限電壓調整成可 用於橫向雙重擴散金氧半場效電晶體運作在18_2 〇g赫茲區 域，使得電晶體的一半具有比其他一半小接近〇 3伏特的臨 限電壓。 結果’雙調相互失眞（tw〇-t〇ne interm〇dulati〇n心办出㈣ (IMD)，其係爲線性效能的一般測量，與有相同臨限電壓的 情況下比較，在其1分貝壓縮點之下的輸出功率位—17分貝 具有接近3分貝的改善。 ^1 ϋ ϋ n ϋ ϋ n ι ϋ ϋ n H I · I I I n I n n^-r°J« n n n -ϋ n n I I (請先閱讀背面之注意事項再1|^寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）

Claims (1)

  1. '申請專利範圍 2. 4 經濟部智慧財產局員工消費合作社印製 種用以改善功率金氧半場效電晶體的線性和/或效率之 配置，包含複數個並聯連接電晶體區段，其特徵在於： 土少一組孩電晶體區段具有跟其餘的電晶體區段不同的 臨限電壓。 如申請專利範圍第1項之配置，其特徵在於：該至少一組 兒印體區ί又具有跟其餘的電晶體區段不同的井雜質摻 雖。 如申請專利範圍第2項之配置，其特徵在於：該至少一組 電晶體區段跟其餘的電晶體區段之雜質摻雜的p _井佈植 劑量不同。 如申请專利範圍第2項之配置，其特徵在於：所有的電晶 體區段都是以相同佈植劑量的雜質摻雜，但是該至少— 組電晶體區段跟其餘的電晶體區段使用不同之隨後驅進 週期。 如申請專利範圍第2項之配置，其特徵在於：該至少—組 電晶體區段跟其餘的電晶體區段以雜質摻雜的p-井佈植 能量不同。 如申锋專利範圍第2項之配置，其特徵在於：該異少—組 電晶體區段跟其餘的電晶體區段之雜質摻雜的佈·植傾斜 角度不同。 如申請專利範圍第1項之配置，其特徵在於：該至少—組 電晶體區段具有跟其餘的電晶體區段不同厚度的閘氧化 層0 8.如申請專利範圍第1項之配置，其特徵在‘於：該至少 組 -----II-------裝 ---— II 訂---------線 (請先閱讀背面之注音？事項再填寫本頁) 9- A8B8C8D8 486822 六、申請專利範圍 — 電晶體區段具有跟其餘的電晶體區^ 一 段之間的〆源極橫向擴散。 不同的在兒晶體區 〇 如申請專利範圍第1項之SF w ^ ,, 9. 吊男；配置，其特徵在於：該至少一組 電晶體區段具有跟其餘的電晶體區段不同的閘極材料。 10. 如申凊專利範圍第1至9項任一項之配置，其特徵在於： 該至少一組電晶體區段跟其餘的電晶體區段位於不同的 晶粒上。 裴 訂： 經濟部智慧財產局員工消費合作社印製 10 2 ✓IV 格 規 4 )A Ns) 準 標 家 國 國 中 一用 適一度 ¾ 釐一公 157
TW089122546A 2000-07-19 2000-10-26 An arrangement in a power MOSFET TW486822B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0002714A SE518797C2 (sv) 2000-07-19 2000-07-19 Effekt-LDMOS-transistor innefattande ett flertal parallellkopplade transistorsegment med olika tröskelspänningar

Publications (1)

Publication Number Publication Date
TW486822B true TW486822B (en) 2002-05-11

Family

ID=20280545

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089122546A TW486822B (en) 2000-07-19 2000-10-26 An arrangement in a power MOSFET

Country Status (7)

Country Link
US (1) US6818951B2 (zh)
EP (1) EP1310000A1 (zh)
CN (1) CN1291496C (zh)
AU (1) AU2001271188A1 (zh)
SE (1) SE518797C2 (zh)
TW (1) TW486822B (zh)
WO (1) WO2002007223A1 (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004511084A (ja) 2000-08-08 2004-04-08 アドバンスド　パワー　テクノロジー，インコーポレイテッド 非対称チャネル構造を有するパワーｍｏｓデバイス
US6404022B1 (en) * 2001-02-26 2002-06-11 Ericsson Inc. AM/PM non-linearities in FETs
US7825488B2 (en) 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
US6827695B2 (en) 2002-10-25 2004-12-07 Revivant Corporation Method of determining depth of compressions during cardio-pulmonary resuscitation
JP3713490B2 (ja) * 2003-02-18 2005-11-09 株式会社東芝 半導体装置
US8357979B2 (en) 2003-05-02 2013-01-22 Nxp B.V. Electronic device comprising a field effect transistor for high-frequency applications
US7220235B2 (en) * 2003-06-27 2007-05-22 Zoll Medical Corporation Method and apparatus for enhancement of chest compressions during CPR
US20050101889A1 (en) * 2003-11-06 2005-05-12 Freeman Gary A. Using chest velocity to process physiological signals to remove chest compression artifacts
WO2005112749A1 (en) * 2004-05-12 2005-12-01 Zoll Medical Corporation Ecg rhythm advisory method
US7565194B2 (en) * 2004-05-12 2009-07-21 Zoll Medical Corporation ECG rhythm advisory method
US7652519B2 (en) * 2006-06-08 2010-01-26 Telefonaktiebolaget Lm Ericsson (Publ) Apparatus and method for exploiting reverse short channel effects in transistor devices
US10026734B2 (en) 2011-11-15 2018-07-17 X-Fab Semiconductor Foundries Ag MOS device assembly
US9653459B2 (en) * 2012-07-03 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. MOSFET having source region formed in a double wells region
US10596064B2 (en) 2014-03-18 2020-03-24 Zoll Medical Corporation CPR chest compression system with tonometric input and feedback
US9165918B1 (en) * 2014-05-07 2015-10-20 Freescale Semiconductor, Inc. Composite semiconductor device with multiple threshold voltages
US9640228B2 (en) * 2014-12-12 2017-05-02 Globalfoundries Inc. CMOS device with reading circuit
US9601614B2 (en) * 2015-03-26 2017-03-21 Nxp Usa, Inc. Composite semiconductor device with different channel widths
EP3274048B1 (en) 2015-03-27 2020-02-26 Zoll Medical Corporation Ecg and defibrillator electrode detection and tracking system
CN106298766A (zh) * 2015-05-27 2017-01-04 中国科学院苏州纳米技术与纳米仿生研究所 一种功率器件及优化功率器件的方法
US10615273B2 (en) * 2017-06-21 2020-04-07 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity
US10978583B2 (en) 2017-06-21 2021-04-13 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374407A (en) * 1964-06-01 1968-03-19 Rca Corp Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic
BE666834A (zh) * 1964-07-13
US4395725A (en) * 1980-10-14 1983-07-26 Parekh Rajesh H Segmented channel field effect transistors
JPS5842269A (ja) * 1981-09-05 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型可変抵抗器
JPS607179A (ja) * 1983-06-27 1985-01-14 Toshiba Corp Ｍｏｓ形電界効果トランジスタ
JPS6045053A (ja) * 1983-08-22 1985-03-11 Mitsubishi Electric Corp 半導体装置
US4843358A (en) * 1987-05-19 1989-06-27 General Electric Company Electrically positionable short-circuits
JP2672507B2 (ja) * 1987-05-21 1997-11-05 株式会社東芝 電荷転送素子
US4914051A (en) * 1988-12-09 1990-04-03 Sprague Electric Company Method for making a vertical power DMOS transistor with small signal bipolar transistors
JPH03218070A (ja) * 1990-01-23 1991-09-25 New Japan Radio Co Ltd Ｍｏｓｆｅｔ
JP2572658B2 (ja) * 1990-02-23 1997-01-16 日本モトローラ株式会社 インテリジェントパワー半導体装置の製造方法
US5798550A (en) * 1990-10-01 1998-08-25 Nippondenso Co. Ltd. Vertical type semiconductor device and gate structure
JPH05160407A (ja) * 1991-12-09 1993-06-25 Nippondenso Co Ltd 縦型絶縁ゲート型半導体装置およびその製造方法
IT1254799B (it) * 1992-02-18 1995-10-11 St Microelectronics Srl Transistore vdmos con migliorate caratteristiche di tenuta di tensione.
US5510747A (en) * 1993-11-30 1996-04-23 Siliconix Incorporated Gate drive technique for a bidirectional blocking lateral MOSFET
EP0683521B1 (en) * 1994-05-19 2002-08-14 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Power integrated circuit ("PIC") structure, and manufacturing process thereof
JP3470133B2 (ja) * 1994-06-03 2003-11-25 セイコーインスツルメンツ株式会社 半導体装置の製造方法
US5998837A (en) * 1995-06-02 1999-12-07 Siliconix Incorporated Trench-gated power MOSFET with protective diode having adjustable breakdown voltage
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
DE19651108C2 (de) * 1996-04-11 2000-11-23 Mitsubishi Electric Corp Halbleitereinrichtung des Gategrabentyps mit hoher Durchbruchsspannung und ihr Herstellungsverfahren
US5923065A (en) * 1996-06-12 1999-07-13 Megamos Corporation Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings
US6144070A (en) * 1997-08-29 2000-11-07 Texas Instruments Incorporated High breakdown-voltage transistor with electrostatic discharge protection
US5994175A (en) * 1997-09-05 1999-11-30 Advanced Micro Devices, Inc. High performance MOSFET with low resistance design
TW421962B (en) * 1997-09-29 2001-02-11 Canon Kk Image sensing device using mos type image sensing elements
JP3777768B2 (ja) * 1997-12-26 2006-05-24 株式会社日立製作所 半導体集積回路装置およびセルライブラリを記憶した記憶媒体および半導体集積回路の設計方法
US6091279A (en) * 1998-04-13 2000-07-18 Lucent Technologies, Inc. Temperature compensation of LDMOS devices
US6051458A (en) * 1998-05-04 2000-04-18 Taiwan Semiconductor Manufacturing Company Drain and source engineering for ESD-protection transistors
US6348382B1 (en) * 1999-09-09 2002-02-19 Taiwan Semiconductor Manufacturing Company Integration process to increase high voltage breakdown performance
KR100370155B1 (ko) * 2000-05-01 2003-01-29 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
JP3831894B2 (ja) * 2000-08-01 2006-10-11 株式会社ルネサステクノロジ 半導体集積回路
JP2004511084A (ja) * 2000-08-08 2004-04-08 アドバンスド　パワー　テクノロジー，インコーポレイテッド 非対称チャネル構造を有するパワーｍｏｓデバイス

Also Published As

Publication number Publication date
CN1443371A (zh) 2003-09-17
SE518797C2 (sv) 2002-11-19
US6818951B2 (en) 2004-11-16
US20020047140A1 (en) 2002-04-25
EP1310000A1 (en) 2003-05-14
CN1291496C (zh) 2006-12-20
SE0002714D0 (sv) 2000-07-19
SE0002714L (sv) 2002-01-20
AU2001271188A1 (en) 2002-01-30
WO2002007223A1 (en) 2002-01-24

Similar Documents

Publication Publication Date Title
TW486822B (en) An arrangement in a power MOSFET
TW594987B (en) Lateral junction filed-effect transistors
US8431450B1 (en) Methods and apparatus for LDMOS transistors
JP5184779B2 (ja) 半導体装置およびその製造方法
US7569884B2 (en) LDMOS transistor
US6680224B2 (en) Methods of forming and operating field effect transistors having gate and sub-gate electrodes
CN1734783A (zh) 逻辑开关及利用其的电路
EP1280205A3 (en) Semiconductor memory device
US5569937A (en) High breakdown voltage silicon carbide transistor
EP1796161A3 (en) Integrated circuit and method of manufacturing the same
EP1487023A3 (en) Semiconductor device comprising a MIS transistor and method for manufacturing the same
TW200511580A (en) A semiconductor device and a method of manufacturing the same
TW200614419A (en) Semiconductor devices including high-k dielectric materials and methods of forming the same
JP2007503717A (ja) Ｌｄｍｏｓトランジスタを有する電子装置
TW200931662A (en) Semiconductor device and manufacturing method thereof
CN107871778A (zh) 带有电位浮动型场板的横向双扩散金属氧化物半导体场效应管
US8299526B2 (en) Integrated circuit utilizing trench-type power MOS transistor
TW560062B (en) Semiconductor structure with field plate
US20060145249A1 (en) LDMOS transistor
JP2003174160A (ja) 横型高耐圧ｍｏｓｆｅｔ及びこれを備えた半導体装置
US6620697B1 (en) Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same
US6459101B1 (en) Semiconductor device
US9123767B2 (en) MOS semiconductor device
CN102623313A (zh) 环状离子注入方法、半导体器件及其制造方法
JPS63237571A (ja) 薄膜トランジスタの製造方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees