CN1443371A - 功率金属氧化物半导体场效晶体管中的配置 - Google Patents

功率金属氧化物半导体场效晶体管中的配置 Download PDF

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CN1443371A
CN1443371A CN01812925A CN01812925A CN1443371A CN 1443371 A CN1443371 A CN 1443371A CN 01812925 A CN01812925 A CN 01812925A CN 01812925 A CN01812925 A CN 01812925A CN 1443371 A CN1443371 A CN 1443371A
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CN1291496C (zh
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托马斯·莫乐
尼尔斯·阿福·依肯司坦
真·乔汉森
提摩西·八拉
盖瑞·罗皮斯
迈克尔·比德尼
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Infineon Technologies AG
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Telefonaktiebolaget LM Ericsson AB
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Abstract

一种包含多个并联连接晶体管区段的功率金属氧化物半导体场效晶体管的线性和/或效率，是通过至少一组该晶体管区段所具有跟其余晶体管区段不同的临限电压而有所改善。

Description

功率金属氧化物半导体场效晶体管中的配置
技术领域
本发明涉及功率金属氧化物半导体场效晶体管，尤其涉及一种改善该晶体管的线性及效率的配置。
背景技术
功率金属氧化物半导体场效晶体管是由一直重复自身的内部结构所组成。因此，功率金属氧化物半导体场效晶体管可以视为多个并联连接的小晶体管区段。
功率金属氧化物半导体场效晶体管是以源极连接到地且其漏极是连结到正供应电压而运作。
在其栅电极的正电压超过晶体管的临限电压时，n型的反向区域将会在其栅极底下形成，允许电流在其漏极和源极之间通过。
习惯上，临限电压需要在整个晶体管里是相同的，使得在晶体管区段共享的电流是相等的且当晶体管全力运作时达到最大的效率。那就是说所有的晶体管区段都有相同的临限电压。
例如，功率横向双重扩散金属氧化物半导体场效晶体管(LDMOS)在AB级别运作时，稍微大于临限电压的栅直流偏压电压将会导致静止漏极电流流过晶体管。
静止(quiescent)漏极电流对于在全力输出功率时的所有漏极电流消耗来说是相对小的贡献者，通常是在10％左右且因此对整个效率几乎没有影响。
在低层次的输出功率，即所谓的支持情况(backed-off condition)，上述的情况就不再成立。此时的静止电流对所有漏极电流消耗是重要的，或者是主要的贡献者。
在横向双重扩散金属氧化物半导体场效晶体管中，当输出功率减少时线性将会有重大的改善，其亦为支持模式的运作所特别有兴趣之处。
线性效能也是栅极直流偏压强力的功能。
在给定输出功率层次时存在最佳静止漏极电流值，其导致最佳线性效能。若为了改善效率而进一步降低静止漏极电流，则将会降低线性。
发明内容
本发明的目的是在支持操作情况且维持最高点功率能力下，改善功率金属氧化物半导体场效晶体管中的效率及线性。
此是由根据本发明的至少一组该晶体管区段具有跟其它剩下的晶体管区段不同的临限电压而达成。
因此，临限电压在整个晶体管都经过分级。
藉此，更多的晶体管，换言之，实际上是更多的晶体管区段，在其栅极的输入电压增加时，将会变成主动(active)的，允许在支持操作情况且维持最高点功率能力下，改善效率和/或线性。
附图说明
本发明参考增附的图式将有详细的说明，其中图1是与根据本发明的功率金属氧化物半导体场效晶体管的两个晶体管区段的剖面图。
具体实施方式
图1是与根据本发明的横向双重扩散金属氧化物半导体场效晶体管的两个相邻晶体管区段的剖面图。
然而，本发明并不只限制于横向双重扩散金属氧化物半导体场效晶体管。
就其本身而言已知的方式，晶体管是建造在p+硅基材1中，而p-磊晶层2在其一边且源极金属层(未显示)在另外一边。
n+源极区域4和漏极区域，各都包括n+漏极接触区域3，两边都由n-偏移区域5所包围，是在p-层2提供。漏极金手指D是在n+漏极接触区域3的上面提供。
栅极手指G在p-层2上的漏极金手指D的两边，嵌入于介电层7，p-阱6是在每个栅手指7之下，从其源极边横向扩散。
深扩散p+区域8允许电流从n+源极区域4到p+基材1中流过，而通过夹钳(clamps)9装置而有最少的压降，换言之即为金属接触，其使n+源极区域4和p+区域8短路。
如介绍部分所指示，晶体管区段的临限电压需要在整个晶体管里是相同的，使得在晶体管区段共享的电流是相等的且当晶体管全力运作时达到最大的效率。
然而，也如上所述，当晶体管区段的临限电压在整个晶体管里是相同时，当晶体管在所谓的支持情况下操作时，换言之，在其1分贝(dB)压缩点(compression point)之下时，效率和线性并不是最佳化的。
根据本发明，晶体管区段的临限电压会经由整个晶体管而逐渐地调整。实际上，晶体管区段的群组会有不同的临限电压。这些群组并不需要位于一个且相同的晶粒(die)上，而可以位于不同相连的晶粒上。
在运作时，符合本发明的晶体管的栅极直流偏压将会调整而允许静止漏极电流只流过有最低临限电压的晶体管的部分。
当输入信号的电压增加，更多的晶体管，即更多的晶体管区段，将会变成主动的，并允许在支持操作情况且维持最高点功率能力下改善效率和/或线性。
横向双重扩散金属氧化物半导体场效晶体管区段的临限电压由栅氧化层的厚度，栅极之下的硼(boron)浓度和栅手指材料的选择而决定。
有多种方式可以达成在晶体管中分级的临限电压。
最实际达成分级的临限电压的选项是变化p-阱的不纯物掺杂。
使用一掩模层以定义区域是通常的方式，其中p-阱掺杂(implant)引进硅中，之后作一次硼掺杂，随后为镕炉的一驱进(drive-in)周期。
为了达成分级的临限电压，也可能使用多种p-阱的掺杂掩模和
-对不同的晶体管区段使用不同p-阱掺杂剂量或掺杂能量或掺杂倾斜角度，之后仍然经过共同的镕炉驱进周期。
-每次使用相同的p-阱掺杂剂量但是不同的随后驱进周期或
-使用上述方法的组合。
其它在晶体管中达成分级的临限电压的选项可能是
-使用上述相同的方法变化在晶体管区段之间n+源极横向扩散的量，
-在栅极形成前引进不同程度的临限调整掺杂，
-使用多晶硅栅手指和不同的杂质掺杂在晶体管区段之间，或甚至使用不同的栅极材料或
-变化在晶体管区段间的栅氧化层厚度。
依据正确的制程设定，更多选项应该对于任何熟悉此技艺的人士来说是可用的。
假如两个或更多的不同临限电压的晶体管晶粒一起在相同的包装上组合，该基本原则仍然有效。
范例：
通过调整，例如，p-阱掺杂倾斜角度，临限电压调整成可用于横向双重扩散金属氧化物半导体场效晶体管运作在1.8-2.0G赫兹区域，使得晶体管的一半具有比其它一半小接近0.3伏特的临限电压。
结果，双调互调失真(two-tone intermodulation distortion)(IMD)，其是为线性效能的一般测量，与有相同临限电压的情况下比较，在其1分贝压缩点之下的输出功率位准17分贝具有接近3分贝的改善。

Claims (10)

1.一种用以改善功率金属氧化物半导体场效晶体管的线性和/或效率的配置(arrangement)，包含多个并联连接晶体管区段，其特征在于：至少一组该晶体管区段具有跟其余的晶体管区段不同的临限电压。
2.如权利要求1所述的配置，其特征在于：该至少一组晶体管区段具有跟其余的晶体管区段不同的p-阱杂质掺杂。
3.如权利要求2所述的配置，其特征在于：该至少一组晶体管区段跟其余的晶体管区段的杂质掺杂的p-阱掺杂剂量不同。
4.如权利要求2所述的配置，其特征在于：所有的晶体管区段都是以相同掺杂剂量的杂质掺杂，但是该至少一组晶体管区段跟其余的晶体管区段使用不同的随后驱进周期。
5.如权利要求2所述的配置，其特征在于：该至少一组晶体管区段跟其余的晶体管区段以杂质掺杂的p-阱掺杂能量不同。
6.如权利要求2所述的配置，其特征在于：该至少一组晶体管区段跟其余的晶体管区段的杂质掺杂的掺杂倾斜角度不同。
7.如权利要求1所述的配置，其特征在于：该至少一组晶体管区段具有跟其余的晶体管区段不同厚度的栅氧化层。
8.如权利要求1所述的配置，其特征在于：该至少一组晶体管区段具有跟其余的晶体管区段不同的在晶体管区段之间的n+源极横向扩散。
9.如权利要求1所述的配置，其特征在于：该至少一组晶体管区段具有跟其余的晶体管区段不同的栅极材料。
10.如权利要求1至9任一项所述的配置，其特征在于：该至少一组晶体管区段跟其余的晶体管区段位于不同的晶粒(die)上。
CNB018129250A 2000-07-19 2001-07-09 功率金属氧化物半导体场效晶体管中的配置 Expired - Fee Related CN1291496C (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298766A (zh) * 2015-05-27 2017-01-04 中国科学院苏州纳米技术与纳米仿生研究所 一种功率器件及优化功率器件的方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004511084A (ja) 2000-08-08 2004-04-08 アドバンスド　パワー　テクノロジー，インコーポレイテッド 非対称チャネル構造を有するパワーｍｏｓデバイス
US6404022B1 (en) * 2001-02-26 2002-06-11 Ericsson Inc. AM/PM non-linearities in FETs
US7825488B2 (en) 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
US6827695B2 (en) 2002-10-25 2004-12-07 Revivant Corporation Method of determining depth of compressions during cardio-pulmonary resuscitation
JP3713490B2 (ja) * 2003-02-18 2005-11-09 株式会社東芝 半導体装置
US8357979B2 (en) 2003-05-02 2013-01-22 Nxp B.V. Electronic device comprising a field effect transistor for high-frequency applications
US7220235B2 (en) * 2003-06-27 2007-05-22 Zoll Medical Corporation Method and apparatus for enhancement of chest compressions during CPR
US20050101889A1 (en) * 2003-11-06 2005-05-12 Freeman Gary A. Using chest velocity to process physiological signals to remove chest compression artifacts
WO2005112749A1 (en) * 2004-05-12 2005-12-01 Zoll Medical Corporation Ecg rhythm advisory method
US7565194B2 (en) * 2004-05-12 2009-07-21 Zoll Medical Corporation ECG rhythm advisory method
US7652519B2 (en) * 2006-06-08 2010-01-26 Telefonaktiebolaget Lm Ericsson (Publ) Apparatus and method for exploiting reverse short channel effects in transistor devices
US10026734B2 (en) 2011-11-15 2018-07-17 X-Fab Semiconductor Foundries Ag MOS device assembly
US9653459B2 (en) * 2012-07-03 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. MOSFET having source region formed in a double wells region
US10596064B2 (en) 2014-03-18 2020-03-24 Zoll Medical Corporation CPR chest compression system with tonometric input and feedback
US9165918B1 (en) * 2014-05-07 2015-10-20 Freescale Semiconductor, Inc. Composite semiconductor device with multiple threshold voltages
US9640228B2 (en) * 2014-12-12 2017-05-02 Globalfoundries Inc. CMOS device with reading circuit
US9601614B2 (en) * 2015-03-26 2017-03-21 Nxp Usa, Inc. Composite semiconductor device with different channel widths
EP3274048B1 (en) 2015-03-27 2020-02-26 Zoll Medical Corporation Ecg and defibrillator electrode detection and tracking system
US10615273B2 (en) * 2017-06-21 2020-04-07 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity
US10978583B2 (en) 2017-06-21 2021-04-13 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374407A (en) * 1964-06-01 1968-03-19 Rca Corp Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic
BE666834A (zh) * 1964-07-13
US4395725A (en) * 1980-10-14 1983-07-26 Parekh Rajesh H Segmented channel field effect transistors
JPS5842269A (ja) * 1981-09-05 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型可変抵抗器
JPS607179A (ja) * 1983-06-27 1985-01-14 Toshiba Corp Ｍｏｓ形電界効果トランジスタ
JPS6045053A (ja) * 1983-08-22 1985-03-11 Mitsubishi Electric Corp 半導体装置
US4843358A (en) * 1987-05-19 1989-06-27 General Electric Company Electrically positionable short-circuits
JP2672507B2 (ja) * 1987-05-21 1997-11-05 株式会社東芝 電荷転送素子
US4914051A (en) * 1988-12-09 1990-04-03 Sprague Electric Company Method for making a vertical power DMOS transistor with small signal bipolar transistors
JPH03218070A (ja) * 1990-01-23 1991-09-25 New Japan Radio Co Ltd Ｍｏｓｆｅｔ
JP2572658B2 (ja) * 1990-02-23 1997-01-16 日本モトローラ株式会社 インテリジェントパワー半導体装置の製造方法
US5798550A (en) * 1990-10-01 1998-08-25 Nippondenso Co. Ltd. Vertical type semiconductor device and gate structure
JPH05160407A (ja) * 1991-12-09 1993-06-25 Nippondenso Co Ltd 縦型絶縁ゲート型半導体装置およびその製造方法
IT1254799B (it) * 1992-02-18 1995-10-11 St Microelectronics Srl Transistore vdmos con migliorate caratteristiche di tenuta di tensione.
US5510747A (en) * 1993-11-30 1996-04-23 Siliconix Incorporated Gate drive technique for a bidirectional blocking lateral MOSFET
EP0683521B1 (en) * 1994-05-19 2002-08-14 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Power integrated circuit ("PIC") structure, and manufacturing process thereof
JP3470133B2 (ja) * 1994-06-03 2003-11-25 セイコーインスツルメンツ株式会社 半導体装置の製造方法
US5998837A (en) * 1995-06-02 1999-12-07 Siliconix Incorporated Trench-gated power MOSFET with protective diode having adjustable breakdown voltage
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
DE19651108C2 (de) * 1996-04-11 2000-11-23 Mitsubishi Electric Corp Halbleitereinrichtung des Gategrabentyps mit hoher Durchbruchsspannung und ihr Herstellungsverfahren
US5923065A (en) * 1996-06-12 1999-07-13 Megamos Corporation Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings
US6144070A (en) * 1997-08-29 2000-11-07 Texas Instruments Incorporated High breakdown-voltage transistor with electrostatic discharge protection
US5994175A (en) * 1997-09-05 1999-11-30 Advanced Micro Devices, Inc. High performance MOSFET with low resistance design
TW421962B (en) * 1997-09-29 2001-02-11 Canon Kk Image sensing device using mos type image sensing elements
JP3777768B2 (ja) * 1997-12-26 2006-05-24 株式会社日立製作所 半導体集積回路装置およびセルライブラリを記憶した記憶媒体および半導体集積回路の設計方法
US6091279A (en) * 1998-04-13 2000-07-18 Lucent Technologies, Inc. Temperature compensation of LDMOS devices
US6051458A (en) * 1998-05-04 2000-04-18 Taiwan Semiconductor Manufacturing Company Drain and source engineering for ESD-protection transistors
US6348382B1 (en) * 1999-09-09 2002-02-19 Taiwan Semiconductor Manufacturing Company Integration process to increase high voltage breakdown performance
KR100370155B1 (ko) * 2000-05-01 2003-01-29 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
JP3831894B2 (ja) * 2000-08-01 2006-10-11 株式会社ルネサステクノロジ 半導体集積回路
JP2004511084A (ja) * 2000-08-08 2004-04-08 アドバンスド　パワー　テクノロジー，インコーポレイテッド 非対称チャネル構造を有するパワーｍｏｓデバイス

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298766A (zh) * 2015-05-27 2017-01-04 中国科学院苏州纳米技术与纳米仿生研究所 一种功率器件及优化功率器件的方法

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