CN1711679B - 利用抑制三阶跨导改进rf晶体管放大器的线性度 - Google Patents

利用抑制三阶跨导改进rf晶体管放大器的线性度 Download PDF

Info

Publication number
CN1711679B
CN1711679B CN2003801027105A CN200380102710A CN1711679B CN 1711679 B CN1711679 B CN 1711679B CN 2003801027105 A CN2003801027105 A CN 2003801027105A CN 200380102710 A CN200380102710 A CN 200380102710A CN 1711679 B CN1711679 B CN 1711679B
Authority
CN
China
Prior art keywords
transistor
power amplifier
transistors
different
transistorized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2003801027105A
Other languages
English (en)
Other versions
CN1711679A (zh
Inventor
R·S·彭格利
S·M·伍德
J·P·奎恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Microwave LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Microwave LLC filed Critical Cree Microwave LLC
Publication of CN1711679A publication Critical patent/CN1711679A/zh
Application granted granted Critical
Publication of CN1711679B publication Critical patent/CN1711679B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Control Of Position, Course, Altitude, Or Attitude Of Moving Bodies (AREA)
  • Train Traffic Observation, Control, And Security (AREA)
  • Optical Communication System (AREA)
  • Microwave Amplifiers (AREA)

Abstract

包括多个并联操作的晶体管的晶体管放大器的线性度通过减小晶体管产生的信号奇数阶跨导导数来改进。能够以组的形式提供晶体管，每组上施加不同的偏置电压，或每组晶体管上可以施加不同的输入信号。晶体管组具有不同的物理参数，如在场效应晶体管中的栅极的宽长比及晶体管的门限电压。

Description

利用抑制三阶跨导改进RF晶体管放大器的线性度
技术领域
本发明通常涉及RF和微波晶体管放大器，并更具体地，本发明涉及改进这种功率放大器的线性度。
背景技术
RF功率放大器典型地包括并联操作的多个晶体管单元。该晶体管包括硅横向扩散MOSFETS(LDMOSFET)或其它包括硅双极型、SIC MESFET以及如GAAS MESFET、InGaP HBT和GaN HEMT这样的III-V装置的半导体技术。
改进的线性度和操作是RF功率晶体管技术内的目标。不同的RF功率晶体管技术中的线性度的确定中具有多个共同的因素，包括随信号电平改变输入和阻抗、随信号电平改变电容和它们的导数、击穿和衬底导电效应、操作类型及随偏置和信号电平改变跨导和它的导数。
发明内容
本发明涉及通过减少奇数阶跨导导数来改进线性度。
根据本发明，通过使用多个晶体管和导数叠加(多个晶体管跨导导数的正负值相消)减少奇数阶跨导导数来改进RF功率晶体管的线性度。
在本发明的一个实施例中，多个晶体管(其中每个能够包括多个晶体管单元)由共用RF输入所驱动，但是具有不同的DC偏置电压。在另一实施例中，晶体管和晶体管单元具有不同的导电门限电压。这是通过例如在制作期间改变FET的沟道渗杂来得到的。在本发明的另一实施例中，在晶体管中改变RF输入的相位，同时改变或不改变到晶体管的DC偏置电压或门限电压。仍在另一实施例中，改变晶体管的沟道和栅极宽长比，更可取地是在相同的半导体管芯上形成不同栅极宽度的晶体管，从而减小对过程变化和组件公差的灵敏度。
抑制三阶和其它奇数阶跨导的优点是增加线性度或在固定线性度上增加效率，这导致制造利润的提高并使总的功率放大器的大小减小。参考附图，根据下面详细的描述和所附的权利要求，本发明和本发明的目的和特征将更显而易见。
附图说明
图1是常规的RF功率晶体管放大器的符号表示，该放大器可以包括具有共用DC偏置的共用RF输入驱动的多个晶体管。
图2是根据本发明的实施例包括三个晶体管的RF晶体管放大器的简图，每一个晶体管由共用RF输入驱动，但是具有不同的DC偏置电压。
图3和图4是本发明的其它实施例的简图，其中三个功率晶体管由共用RF输入驱动，具有共用DC偏置但是分别具有不同的门限电平和多种输入相位。
图5是本发明的另一实施例的简图，其中多个FET晶体管具有不同的栅极宽长比。
图6是分别具有常规的偏置和驱动和具有多栅极偏置的四个LDMOS FET的三阶互调功率的曲线图。
具体实施方式
跨导是测量输出电流中的改变的，是输入电压的函数。在场效应晶体管中，如LDMOS FET，增量的漏电流id能够表示为增量的栅极电压，vg的函数，在静止的偏置点Id(Vg，0)周围，其中Id是大信号漏电流，如下面所述。
i d = d I d d V g | V = V g . 0 v g + 1 2 d 2 I d dV g 2 | V = V g . 0 v g 2 + 1 6 d 3 I d d V g 3 | V = V g . 0 v g 3 = g 1 v g + g 2 v g 2 + g 3 v g 3
跨导导数的二阶导数或二次谐波不在输入信号频率的范围内，因而不存在问题。然而，三阶导数和较高的奇数导数频率上较接近于输入信号并且能够引起线性度问题。
根据本发明，通过在多个晶体管单元中相消正负值来减小奇数阶跨导导数的不利影响。这以若干方式来实现，如图2-5所示，而不是操作具有共用RF输入和共用DC偏置电压并且具有共用单元结构的所有晶体管单元，如图1中示意地说明，在图1中以10示出的所有晶体管单元由一个RF输入信号12来驱动，具有共用DC偏置电压14。
根据本发明的一个实施例，如图2所示，晶体管被编成三个组10-1、10-2和10-3，这三组的输入和输出与共用RF输入驱动12和共用输出16连接在一起。然而，每个组具有所标记的单独的DC偏置。例如，利用LDMOS晶体管单元，对于在4伏到5伏范围内的输入电压，偏置可以是如4.1伏、4.2伏和4.3伏。正如一般惯例，DC偏置电压可以和施加到晶体管的控制元件(例如栅极或基极)的RF输入驱动一起施加。
图3是本发明的另一实施例的简图，其中，三个晶体管组10-1、10-2和10-3具有相同的DC偏置电压和RF输入驱动，但是晶体管组的门限电压不同，通过改变晶体管单元的沟道渗杂来实现。例如，通过改变沟道渗杂，能够改变门限电压。此外，DC偏置电压能够与施加到晶体管控制元件(例如栅极或基极)的RF输入驱动相结合。
图4是本发明的另一实施例，其中，晶体管组10-1、10-2和10-3具有相同的DC偏置14并具有相同的RF输入12，但是通过改变输入线12-1、12-2和12-3的长度改变输入的相位。在输入相位中的不同产生多个晶体管的跨导导数的正负值的交错，并且在16上相加时，正负值趋向于相消。
图5是本发明的另一实施例简图，其中，晶体管组10-1、10-2和10-3具有不同的栅极宽长比。通过以10％-20％改变宽长比，再次地改变多个晶体管组的跨导导数的正负值。
图6是说明四个LDMOS FET晶体管三阶导数功率(dBm或dBc)与功率输出(powerout)(dBm)的关系曲线图，以60示出的是当晶体管被常规驱动和偏置时的关系曲线，以62示出的是当晶体管被不同的偏置电压驱动(类似于图2三个晶体管的简图)时的关系曲线。在2.14GHz上驱动晶体管，整个输出功率70瓦。需要注意的是，在8dB到13dB的补偿功率范围内，三阶导数的功率从大约40dBm减小到60dBm，并因此增加功率放大器的线性度。
已经描述了多个晶体管放大器的若干实施例，构造、偏置或驱动多个晶体管放大器，使得奇数阶跨导导数的正负值趋向于相消，从而改进功率放大器操作的线性度。尽管根据特定的实施例已经描述了本发明，但是描述是说明本发明的并不用于限制本发明。对于本领域的技术人员在不偏离如所附权利要求所定义的本发明的实际精神和范围的前提下，不同的修改和应用可以存在。

Claims (17)

1.一种具有被改进的线性度和操作的RF功率放大器，包括多组与共用输出连接的晶体管，不同的输入信号或不同的DC偏置电压施加到所述晶体管，由此来自所述晶体管的奇数阶跨导导数的正负值趋向于相消。
2.如权利要求1所述的RF功率放大器，其中所述晶体管具有相同的DC偏置电压。
3.如权利要求1所述的RF功率放大器，其中所述晶体管具有相同的输入信号。
4.如权利要求1所述的RF功率放大器，其中到所述晶体管的输入信号的相位不同。
5.如权利要求1所述的RF功率放大器，其中所述晶体管是双极型晶体管。
6.如权利要求5所述的RF功率放大器，其中所述双极型晶体管包括硅和化合物半导体材料。
7.如权利要求1所述的RF功率放大器，其中所述晶体管是场效应晶体管。
8.如权利要求7所述的RF功率放大器，其中所述场效应晶体管包括硅和化合物半导体材料。
9.一种具有被改进的线性度和操作的RF功率放大器，包括多组与共用输出连接的晶体管，所述晶体管的物理参数不同，由此来自所述晶体管的奇数阶跨导导数的正负值趋向于相消，其中所述晶体管包括具有栅极的场效应晶体管；以及所述晶体管的物理参数包括晶体管栅极的宽长比或晶体管的电压门限。
10.如权利要求9所述的RF功率放大器，其中所述晶体管栅极的宽长比不同。
11.如权利要求9所述的RF功率放大器，其中所述晶体管的电压门限不同。
12.一种改进多晶体管功率放大器的操作线性度的方法，包括步骤：
a)提供多组与共用输出连接的晶体管；
b)施加不同的DC偏置电压或不同的输入信号到所述多组晶体管；和
c)在共用输出处使所述多组晶体管的输出相加，其中输入信号的奇数阶跨导导数的正负值在共用输出处趋向于相消。
13.如权利要求12所述的方法，其中步骤b)包括通过提供施加到所述多组晶体管的具有不同相位的输入信号，变更施加到所述多个组的输入信号。
14.如权利要求12所述的方法，其中步骤b)包括施加不同的DC偏置电压到所述多个组。
15.一种改进多晶体管功率放大器的操作线性度的方法，包括如下步骤：
a)提供多组与共用输出连接的晶体管，所述多组晶体管具有不同物理参数，其中所述晶体管包括具有栅极的场效应晶体管，以及所述晶体管的物理参数包括晶体管栅极的宽长比或晶体管的电压门限；
b)提供DC偏置电压和输入信号给所述多组晶体管；和
c)在共用输出处使所述多组晶体管的输出相加，其中输入信号的奇数阶跨导导数的正负值在共用输出处趋向于相消。
16.如权利要求15所述的方法，每组晶体管具有不同于其它组晶体管的栅极宽长比。
17.如权利要求15所述的方法，每组晶体管具有不同于其它组晶体管的导电门限值。
CN2003801027105A 2002-11-06 2003-11-04 利用抑制三阶跨导改进rf晶体管放大器的线性度 Expired - Lifetime CN1711679B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/289,734 2002-11-06
US10/289,734 US6819184B2 (en) 2002-11-06 2002-11-06 RF transistor amplifier linearity using suppressed third order transconductance
PCT/US2003/035415 WO2004045070A1 (en) 2002-11-06 2003-11-04 Improved rf transistor amplifier linearity using suppressed third order transconductance

Publications (2)

Publication Number Publication Date
CN1711679A CN1711679A (zh) 2005-12-21
CN1711679B true CN1711679B (zh) 2010-04-28

Family

ID=32176101

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2003801027105A Expired - Lifetime CN1711679B (zh) 2002-11-06 2003-11-04 利用抑制三阶跨导改进rf晶体管放大器的线性度

Country Status (11)

Country Link
US (1) US6819184B2 (zh)
EP (1) EP1573908B1 (zh)
JP (1) JP4977320B2 (zh)
KR (1) KR101056889B1 (zh)
CN (1) CN1711679B (zh)
AT (1) ATE470264T1 (zh)
AU (1) AU2003291339A1 (zh)
CA (1) CA2504979C (zh)
DE (1) DE60332868D1 (zh)
TW (1) TWI337450B (zh)
WO (1) WO2004045070A1 (zh)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7421254B2 (en) * 2003-10-23 2008-09-02 Broadcom Corporation High linearity, high efficiency power amplifier with DSP assisted linearity optimization
US7853235B2 (en) * 2004-02-11 2010-12-14 Qualcomm, Incorporated Field effect transistor amplifier with linearization
KR100614928B1 (ko) * 2005-08-17 2006-08-25 삼성전기주식회사 선형화를 위한 미분 중첩회로
JP5065280B2 (ja) * 2005-10-20 2012-10-31 テレフオンアクチーボラゲット エル エム エリクソン（パブル） トランスコンダクタンス段の構成
US7573329B2 (en) * 2006-02-09 2009-08-11 Vt Silicon, Inc. System and method for IM3 reduction and cancellation in amplifiers
KR20070091963A (ko) * 2006-03-08 2007-09-12 인티그런트 테크놀로지즈(주) 적응적 선형 증폭기
US7323929B2 (en) * 2006-03-09 2008-01-29 Analog Devices Inc. Apparatus for and method of biasing a transistor
JP2007295234A (ja) * 2006-04-25 2007-11-08 Hitachi Kokusai Electric Inc 増幅装置
TWI332749B (en) * 2006-08-14 2010-11-01 Realtek Semiconductor Corp Power amplifier circuit having a bias signal inputted into an input terminal and method thereof
EP2082478A4 (en) * 2006-10-06 2010-01-27 Vt Silicon Inc SYSTEM AND METHOD FOR ON-CHIP IM3 REDUCTION USING A WIDE RANGE OF DRIVE FORCE
JPWO2009013814A1 (ja) * 2007-07-24 2010-09-24 富士通株式会社 半導体装置
EP2040299A1 (en) * 2007-09-12 2009-03-25 Forschungsverbund Berlin e.V. Electrical devices having improved transfer characteristics and method for tailoring the transfer characteristics of such an electrical device
US7936217B2 (en) * 2007-11-29 2011-05-03 Qualcomm, Incorporated High-linearity complementary amplifier
US7936214B2 (en) * 2008-03-28 2011-05-03 Medtronic, Inc. Third order derivative distortion cancellation for ultra low power applications
KR101125721B1 (ko) 2008-05-27 2012-03-28 홀린워스 펀드, 엘.엘.씨. 선형화를 구비한 ｒｆ 전력 증폭기
CN101656514B (zh) * 2009-09-07 2011-09-28 东南大学 一种基于匹配共享增益可控的并联型射频功率放大器
JP5694035B2 (ja) * 2011-03-31 2015-04-01 富士通株式会社 電力増幅器および通信装置
US8643101B2 (en) 2011-04-20 2014-02-04 United Microelectronics Corp. High voltage metal oxide semiconductor device having a multi-segment isolation structure
US8581338B2 (en) 2011-05-12 2013-11-12 United Microelectronics Corp. Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof
US8501603B2 (en) 2011-06-15 2013-08-06 United Microelectronics Corp. Method for fabricating high voltage transistor
US8592905B2 (en) 2011-06-26 2013-11-26 United Microelectronics Corp. High-voltage semiconductor device
US20130043513A1 (en) 2011-08-19 2013-02-21 United Microelectronics Corporation Shallow trench isolation structure and fabricating method thereof
US8729599B2 (en) 2011-08-22 2014-05-20 United Microelectronics Corp. Semiconductor device
US8921937B2 (en) 2011-08-24 2014-12-30 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device and method of fabricating the same
US8742498B2 (en) 2011-11-03 2014-06-03 United Microelectronics Corp. High voltage semiconductor device and fabricating method thereof
US10026734B2 (en) 2011-11-15 2018-07-17 X-Fab Semiconductor Foundries Ag MOS device assembly
US8482063B2 (en) 2011-11-18 2013-07-09 United Microelectronics Corporation High voltage semiconductor device
US8587058B2 (en) 2012-01-02 2013-11-19 United Microelectronics Corp. Lateral diffused metal-oxide-semiconductor device
US8492835B1 (en) 2012-01-20 2013-07-23 United Microelectronics Corporation High voltage MOSFET device
US9093296B2 (en) 2012-02-09 2015-07-28 United Microelectronics Corp. LDMOS transistor having trench structures extending to a buried layer
TWI523196B (zh) 2012-02-24 2016-02-21 聯華電子股份有限公司 高壓金氧半導體電晶體元件及其佈局圖案
US8890144B2 (en) 2012-03-08 2014-11-18 United Microelectronics Corp. High voltage semiconductor device
US9236471B2 (en) 2012-04-24 2016-01-12 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9159791B2 (en) 2012-06-06 2015-10-13 United Microelectronics Corp. Semiconductor device comprising a conductive region
US8836067B2 (en) 2012-06-18 2014-09-16 United Microelectronics Corp. Transistor device and manufacturing method thereof
US8674441B2 (en) 2012-07-09 2014-03-18 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8643104B1 (en) 2012-08-14 2014-02-04 United Microelectronics Corp. Lateral diffusion metal oxide semiconductor transistor structure
US8729631B2 (en) 2012-08-28 2014-05-20 United Microelectronics Corp. MOS transistor
US8854144B2 (en) 2012-09-14 2014-10-07 General Atomics High voltage amplifiers and methods
US9196717B2 (en) 2012-09-28 2015-11-24 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8829611B2 (en) 2012-09-28 2014-09-09 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device
US8704304B1 (en) 2012-10-05 2014-04-22 United Microelectronics Corp. Semiconductor structure
US20140110777A1 (en) 2012-10-18 2014-04-24 United Microelectronics Corp. Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof
US9224857B2 (en) 2012-11-12 2015-12-29 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9035425B2 (en) 2013-05-02 2015-05-19 United Microelectronics Corp. Semiconductor integrated circuit
US8896057B1 (en) 2013-05-14 2014-11-25 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US8786362B1 (en) 2013-06-04 2014-07-22 United Microelectronics Corporation Schottky diode having current leakage protection structure and current leakage protecting method of the same
US8941175B2 (en) 2013-06-17 2015-01-27 United Microelectronics Corp. Power array with staggered arrangement for improving on-resistance and safe operating area
US9136375B2 (en) 2013-11-21 2015-09-15 United Microelectronics Corp. Semiconductor structure
US9490360B2 (en) 2014-02-19 2016-11-08 United Microelectronics Corp. Semiconductor device and operating method thereof
US9252715B2 (en) 2014-03-14 2016-02-02 Freescale Semiconductor, Inc. System and method for adaptive linearization of RF amplifiers
US9356564B1 (en) * 2014-03-27 2016-05-31 Hrl Laboratories, Llc Broadband linear amplifier architecture by combining two distributed amplifiers
CN106298766A (zh) * 2015-05-27 2017-01-04 中国科学院苏州纳米技术与纳米仿生研究所 一种功率器件及优化功率器件的方法
TWI792656B (zh) * 2016-09-26 2023-02-11 美商天工方案公司 用於射頻應用之主輔場效電晶體組態
US12009788B2 (en) * 2019-03-28 2024-06-11 Macom Technology Solutions Holdings, Inc. In-transistor load modulation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4513209A (en) * 1981-02-16 1985-04-23 Matsushita Electric Industrial Co., Ltd. Level detector
US5742203A (en) * 1994-10-28 1998-04-21 U.S. Philips Corporation Gain-controllable amplifier, receiver
US6317002B1 (en) * 2000-06-27 2001-11-13 International Business Machines Corporation Circuit for efficiently producing low-power radio frequency signals
US6448859B2 (en) * 2000-03-28 2002-09-10 Kabushiki Kaisha Toshiba High frequency power amplifier having a bipolar transistor

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3392335A (en) * 1963-06-12 1968-07-09 Magnavox Co Antenna multicoupler
JPS5385143A (en) * 1977-01-06 1978-07-27 Nippon Telegr & Teleph Corp <Ntt> Power synthesizing amplifier
DE69028803T2 (de) * 1989-05-31 1997-03-20 Toshiba Kawasaki Kk Linearisierter Differenzverstärker
JP2888923B2 (ja) * 1989-05-31 1999-05-10 株式会社東芝 線形化差動増幅器
JP2915440B2 (ja) * 1989-09-12 1999-07-05 株式会社東芝 線形化差動増幅器
US5694085A (en) * 1996-02-14 1997-12-02 Glenayre Electronics, Inc. High-power amplifier using parallel transistors
JPH1041762A (ja) * 1996-07-24 1998-02-13 Toshiba Corp トランスコンダクタンスアンプ回路
US5903185A (en) * 1996-12-20 1999-05-11 Maxim Integrated Products, Inc. Hybrid differential pairs for flat transconductance
WO2000003478A1 (fr) * 1998-07-08 2000-01-20 Hitachi, Ltd. Module amplificateur de puissance haute frequence
US6233440B1 (en) 1998-08-05 2001-05-15 Triquint Semiconductor, Inc. RF power amplifier with variable bias current
SE516847C2 (sv) * 2000-07-07 2002-03-12 Ericsson Telefon Ab L M Sammansatt förstärkare samt sändare som innefattar en sådan förstärkare
SE520760C2 (sv) * 2000-06-06 2003-08-19 Ericsson Telefon Ab L M Doherty-förstärkare av flerstegstyp
US6429742B1 (en) 2001-06-29 2002-08-06 Intel Corporation Gain-controlled tuned differential adder
US6614308B2 (en) * 2001-10-22 2003-09-02 Infineon Technologies Ag Multi-stage, high frequency, high power signal amplifier
US7564273B2 (en) 2007-02-06 2009-07-21 Massachusetts Institute Of Technology Low-voltage comparator-based switched-capacitor networks

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4513209A (en) * 1981-02-16 1985-04-23 Matsushita Electric Industrial Co., Ltd. Level detector
US5742203A (en) * 1994-10-28 1998-04-21 U.S. Philips Corporation Gain-controllable amplifier, receiver
US6448859B2 (en) * 2000-03-28 2002-09-10 Kabushiki Kaisha Toshiba High frequency power amplifier having a bipolar transistor
US6317002B1 (en) * 2000-06-27 2001-11-13 International Business Machines Corporation Circuit for efficiently producing low-power radio frequency signals

Also Published As

Publication number Publication date
CA2504979A1 (en) 2004-05-27
WO2004045070A1 (en) 2004-05-27
US6819184B2 (en) 2004-11-16
US20040085132A1 (en) 2004-05-06
AU2003291339A1 (en) 2004-06-03
EP1573908A1 (en) 2005-09-14
EP1573908B1 (en) 2010-06-02
TW200414671A (en) 2004-08-01
ATE470264T1 (de) 2010-06-15
CA2504979C (en) 2011-10-18
KR20050084630A (ko) 2005-08-26
TWI337450B (en) 2011-02-11
JP2006506020A (ja) 2006-02-16
EP1573908A4 (en) 2006-01-11
KR101056889B1 (ko) 2011-08-12
JP4977320B2 (ja) 2012-07-18
CN1711679A (zh) 2005-12-21
DE60332868D1 (de) 2010-07-15

Similar Documents

Publication Publication Date Title
CN1711679B (zh) 利用抑制三阶跨导改进rf晶体管放大器的线性度
Liechti Performance of dual-gate GaAs MESFET's as gain-controlled low-noise amplifiers and high-speed modulators
US7629627B2 (en) Field effect transistor with independently biased gates
US6268632B1 (en) Field effect transistor and power amplifier including the same
US20050275454A1 (en) Cross-differential amplifier
JP7383041B2 (ja) トランジスタ内負荷変調
US8357979B2 (en) Electronic device comprising a field effect transistor for high-frequency applications
EP1515434A1 (en) High-frequency amplifier
CN1193845A (zh) 含有增强型晶体管电路的偏压电路的集成电路器件
US5539228A (en) Field-effect transistor with high breakdown voltage provided by channel recess offset toward drain
Doudorov Evaluation of Si-LDMOS transistors for RF Power Amplifier in 2-6 GHz frequency range
Huang et al. Device and process optimization for a low voltage enhancement mode power heterojunction FET for portable applications
US7161433B2 (en) High-frequency amplifier
KR100331044B1 (ko) 단일 전압형 ｐｈｅｍｔ
Lepine et al. A high efficient LDMOS power amplifier based on an inverse class F architecture
Otobe et al. Super low-distortion and high power hetero GaAs MESFETs with asymmetrical LDD structure
WO2008083128A1 (en) Two-stage amplification using intermediate non-linear square wave
Raut et al. Design and Comparison of Wideband Cascode Low Noise Amplifier using GAA-JLFET and GAA-NC-JLFET for RFIC Applications
EP0610564A2 (en) Dual gate fet and circuits using dual gate fet
Chiu et al. Microwave performance of double $\delta $-doped high electron mobility transistor with various lower/upper planar-doped ratio designs
Nguyen et al. Large-Signal Characteristics of AlGaN/GaN Power MODFETs
Hiraoka et al. Comparison of high-frequency performance of quasi-SOI and conventional SOI power MOSFETs
JPH05198746A (ja) 半導体装置
JPS5917859B2 (ja) 半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: CREE RESEARCH, INC.

Free format text: FORMER OWNER: CREE MICROWAVE INC.

Effective date: 20110816

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20110816

Address after: North Carolina

Patentee after: CREE, Inc.

Address before: California, USA

Patentee before: Cree Microwave, Inc.

CX01 Expiry of patent term

Granted publication date: 20100428

CX01 Expiry of patent term