EP2082478A4 - System and method for on-chip im3 reduction over a broad range of operating powers - Google Patents

System and method for on-chip im3 reduction over a broad range of operating powers

Info

Publication number
EP2082478A4
EP2082478A4 EP07843972A EP07843972A EP2082478A4 EP 2082478 A4 EP2082478 A4 EP 2082478A4 EP 07843972 A EP07843972 A EP 07843972A EP 07843972 A EP07843972 A EP 07843972A EP 2082478 A4 EP2082478 A4 EP 2082478A4
Authority
EP
European Patent Office
Prior art keywords
chip
broad range
reduction over
operating powers
powers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07843972A
Other languages
German (de)
French (fr)
Other versions
EP2082478A2 (en
Inventor
Vikram Bidare Krishnamurhty
Tanveer Kaur Khanijoun
Kyle Mark Hershberger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
VT Silicon Inc
Original Assignee
VT Silicon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by VT Silicon Inc filed Critical VT Silicon Inc
Publication of EP2082478A2 publication Critical patent/EP2082478A2/en
Publication of EP2082478A4 publication Critical patent/EP2082478A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0266Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602Combinations of several amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/432Two or more amplifiers of different type are coupled in parallel at the input or output, e.g. a class D and a linear amplifier, a class B and a class A amplifier
EP07843972A 2006-10-06 2007-10-08 System and method for on-chip im3 reduction over a broad range of operating powers Withdrawn EP2082478A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US85014606P 2006-10-06 2006-10-06
PCT/US2007/080699 WO2008043098A2 (en) 2006-10-06 2007-10-08 System and method for on-chip im3 reduction over a broad range of operating powers

Publications (2)

Publication Number Publication Date
EP2082478A2 EP2082478A2 (en) 2009-07-29
EP2082478A4 true EP2082478A4 (en) 2010-01-27

Family

ID=39269263

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07843972A Withdrawn EP2082478A4 (en) 2006-10-06 2007-10-08 System and method for on-chip im3 reduction over a broad range of operating powers

Country Status (5)

Country Link
EP (1) EP2082478A4 (en)
JP (1) JP2010506514A (en)
KR (1) KR20090084843A (en)
CN (1) CN101589547A (en)
WO (1) WO2008043098A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2884659B1 (en) 2013-12-10 2016-08-24 Stichting IMEC Nederland Harmonics Cancellation Circuit for a Power Amplifier
KR102491944B1 (en) * 2017-12-27 2023-01-25 삼성전기주식회사 Power amplifier with asymmetric amplification structure for improving linearity
KR102029558B1 (en) 2017-12-27 2019-10-07 삼성전기주식회사 Power amplifier with improved wideband linearity
CN108400774B (en) * 2018-03-22 2020-06-02 上海唯捷创芯电子技术有限公司 Balanced radio frequency power amplifier, chip and communication terminal
KR102457874B1 (en) 2020-03-09 2022-10-25 충남대학교산학협력단 Power amplifier using multi-stage linearization
WO2023162173A1 (en) * 2022-02-25 2023-08-31 三菱電機株式会社 Low distortion amplifier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030179041A1 (en) * 2002-03-19 2003-09-25 The University Of North Carolina At Charlotte Method and apparatus for cancellation of third order intermodulation distortion and other nonlinearities
US20040085132A1 (en) * 2002-11-06 2004-05-06 Cree Microwave, Inc. RF transistor amplifier linearity using suppressed third order transconductance
US20040150473A1 (en) * 2003-02-05 2004-08-05 Sirenza Microdevices, Inc Distortion cancellation for RF amplifiers using complementary biasing circuitry

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1520396A4 (en) * 2002-06-27 2006-05-17 Broadband Innovations Inc Even order distortion elimination in push-pull or differential amplifiers and circuits

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030179041A1 (en) * 2002-03-19 2003-09-25 The University Of North Carolina At Charlotte Method and apparatus for cancellation of third order intermodulation distortion and other nonlinearities
US20040085132A1 (en) * 2002-11-06 2004-05-06 Cree Microwave, Inc. RF transistor amplifier linearity using suppressed third order transconductance
US20040150473A1 (en) * 2003-02-05 2004-08-05 Sirenza Microdevices, Inc Distortion cancellation for RF amplifiers using complementary biasing circuitry

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MARK P VAN DER HEIJDEN ET AL: "Theory and Design of an Ultra-Linear Square-Law Approximated LDMOS Power Amplifier inClass-AB Operation", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 50, no. 9, 1 September 2002 (2002-09-01), XP011076697, ISSN: 0018-9480 *

Also Published As

Publication number Publication date
JP2010506514A (en) 2010-02-25
CN101589547A (en) 2009-11-25
WO2008043098A2 (en) 2008-04-10
KR20090084843A (en) 2009-08-05
EP2082478A2 (en) 2009-07-29
WO2008043098A3 (en) 2008-08-28

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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17P Request for examination filed

Effective date: 20090421

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: VT SILICON, INC.

RIN1 Information on inventor provided before grant (corrected)

Inventor name: KHANIJOUN, TANVEER KAUR

Inventor name: KRISHNAMURHTY, VIKRAM BIDARE

Inventor name: HERSHBERGER, KYLE MARK

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20091230

RIC1 Information provided on ipc code assigned before grant

Ipc: H03F 3/21 20060101ALI20091222BHEP

Ipc: H03F 3/04 20060101AFI20090515BHEP

17Q First examination report despatched

Effective date: 20100514

STAA Information on the status of an ep patent application or granted ep patent

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18D Application deemed to be withdrawn

Effective date: 20101129