JP7383041B2 - トランジスタ内負荷変調 - Google Patents
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
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- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
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- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Description
Claims (18)
- 半導体ダイを備える電力増幅器であって、
前記半導体ダイが、第1のトランジスタを含む主増幅器と、前記第1のトランジスタとは異なる第2のトランジスタを含むピーキング増幅器とを備え、
前記ピーキング増幅器が、前記第1及び第2のトランジスタのそれぞれのゲートに印加された共通ゲート・バイアスに応答して前記主増幅器の負荷インピーダンスを変調させるように構成されている、電力増幅器。 - 前記共通ゲート・バイアスに基づき、前記半導体ダイ上の前記第1のトランジスタと前記第2のトランジスタとが、前記電力増幅器への入力信号の異なる電力レベルに応答して順にオンになるように構成されている、請求項1に記載の電力増幅器。
- 前記第1のトランジスタ及び前記第2のトランジスタは、それぞれ異なる第1の閾値電圧及び第2の閾値電圧を有する、請求項1に記載の電力増幅器。
- 前記半導体ダイが、
前記半導体ダイ上の前記主増幅器の入力と前記ピーキング増幅器の入力とを電気的に接続して入力信号をそれらに与える入力伝送線路、及び/又は
前記半導体ダイ上の前記主増幅器の出力と前記ピーキング増幅器の出力とを電気的に接続する出力伝送線路
をさらに備える、請求項1から3までのいずれか一項に記載の電力増幅器。 - 前記入力伝送線路又は前記出力伝送線路のうちの少なくとも一方が、前記入力信号の周波数成分に基づき、所定の位相ずれを間に伴って、前記それぞれの入力に信号を与えるように、又は前記それぞれの出力からの信号を与えるように構成されている電気長を有する、請求項4に記載の電力増幅器。
- 前記第1及び第2のトランジスタの前記それぞれのゲートが、それぞれの細長ゲート・フィンガを備え、前記入力伝送線路が、前記第1及び第2のトランジスタの前記それぞれの細長ゲート・フィンガを電気的に接続して前記共通ゲート・バイアスをそれらに与えるゲート・ランナを備える、請求項5に記載の電力増幅器。
- 前記第1及び第2のトランジスタが、前記それぞれの細長ゲート・フィンガの対の間に延在するそれぞれの細長ドレイン・コンタクトをさらに備え、前記出力伝送線路が、前記第1及び第2のトランジスタの前記それぞれの細長ドレイン・コンタクトに電気的に接続するドレイン・ランナを備える、請求項6に記載の電力増幅器。
- 前記入力伝送線路の前記電気長が、前記第1及び第2のトランジスタの前記それぞれの細長ゲート・フィンガ間に延在する前記ゲート・ランナの一部によって画定され、及び/又は
前記出力伝送線路の前記電気長が、前記第1及び第2のトランジスタの前記それぞれの細長ドレイン・コンタクト間に延在する前記ドレイン・ランナの一部によって画定されている、
請求項7に記載の電力増幅器。 - 前記ゲート・ランナの前記一部及び/又は前記ドレイン・ランナの前記一部には、前記第1及び第2のトランジスタへの電気的な接続がない
、請求項8に記載の電力増幅器。 - 前記第1及び第2のトランジスタの前記それぞれの細長ゲート・フィンガが、前記ゲート・ランナの前記一部の両端におけるそれぞれ第1のゲート・バス及び第2のゲート・バスによって前記ゲート・ランナに接続され、前記第1及び第2のトランジスタの前記それぞれの細長ドレイン・コンタクトが、前記ドレイン・ランナの前記一部の両端におけるそれぞれ第1のドレイン・バス及び第2のドレイン・バスによって前記ドレイン・ランナに接続されている、請求項8又は9に記載の電力増幅器。
- 前記第1のトランジスタの前記それぞれの細長ゲート・フィンガが、前記半導体ダイ上の前記第2のトランジスタの前記それぞれの細長ゲート・フィンガとは材料が異なり、ドーパント濃度が異なり、厚みが異なり、及び/又はそれぞれのチャネル領域に対する深さが異なる、請求項8乃至10のいずれか一項に記載の電力増幅器。
- 前記電気長が、前記入力信号の周波数成分に対応する波長の1/4で構成されている
、請求項5から11までのいずれか一項に記載の電力増幅器。 - 前記入力伝送線路又は前記出力伝送線路のうちの少なくとも一方が、前記半導体ダイに分布素子回路を含み、そして集中素子がない、請求項5から11までのいずれか一項に記載の電力増幅器。
- 前記半導体ダイが、前記第1及び第2の閾値電圧とは異なる第3の閾値電圧を有する第3のトランジスタを含む第3の増幅器をさらに備える、請求項5から11までのいずれか一項に記載の電力増幅器。
- 前記主増幅器の前記第1のトランジスタは、複数の前記第1のトランジスタを含み、前記ピーキング増幅器の前記第2のトランジスタは、前記複数の第1のトランジスタよりも個数が多い複数の前記第2のトランジスタを含む、請求項5から11までのいずれか一項に記載の電力増幅器。
- 前記第1及び第2のトランジスタは、高電子移動度トランジスタ(HEMT)又は金属酸化物半導体電界効果トランジスタ(MOSFET)を含む、請求項5から11までのいずれか一項に記載の電力増幅器。
- 前記第3の増幅器は、前記電力増幅器への前記入力信号を受信するように構成された入力と、前記第1及び第2のトランジスタの前記それぞれのゲートのうちの1つ又は複数に結合された出力と、を有するドライバ増幅器を含む、請求項14に記載の電力増幅器。
- 半導体ダイと、
前記半導体ダイ上の第1の増幅器であって、第1の閾値電圧を有し第1のゲート・フィンガを備える複数の第1のトランジスタを備える、第1の増幅器と、
前記半導体ダイ上の第2の増幅器であって、前記第1の閾値電圧とは異なる第2の閾値電圧を有し第2のゲート・フィンガを備える複数の第2のトランジスタを備える、第2の増幅器と、
前記半導体ダイ上のゲート・ランナであって、前記第1の増幅器と前記第2の増幅器とに共通ゲート・バイアスを印加するように前記第1のゲート・フィンガと前記第2のゲート・フィンガとを電気的に接続する、ゲート・ランナと、を備え、
前記第1のゲート・フィンガと前記第2のゲート・フィンガとの間に延在する前記ゲート・ランナの一部が、前記第1及び第2の増幅器への無線周波数(RF)入力信号の周波数成分に基づいている電気長を有する、半導体素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US16/367,631 US12009788B2 (en) | 2019-03-28 | 2019-03-28 | In-transistor load modulation |
US16/367,631 | 2019-03-28 | ||
PCT/US2020/023128 WO2020197852A1 (en) | 2019-03-28 | 2020-03-17 | In-transistor load modulation |
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JP2022527051A JP2022527051A (ja) | 2022-05-30 |
JP7383041B2 true JP7383041B2 (ja) | 2023-11-17 |
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EP (1) | EP3949116A1 (ja) |
JP (1) | JP7383041B2 (ja) |
CN (1) | CN113647015A (ja) |
WO (1) | WO2020197852A1 (ja) |
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US9774301B1 (en) * | 2016-05-17 | 2017-09-26 | Nxp Usa, Inc. | Multiple-path RF amplifiers with angularly offset signal path directions, and methods of manufacture thereof |
JP2019092009A (ja) * | 2017-11-13 | 2019-06-13 | 住友電気工業株式会社 | 半導体増幅素子及び半導体増幅装置 |
JP2020123761A (ja) * | 2019-01-29 | 2020-08-13 | 株式会社村田製作所 | 電力増幅器 |
JP7435193B2 (ja) * | 2020-04-14 | 2024-02-21 | 住友電気工業株式会社 | 高周波増幅器 |
Citations (9)
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JP2003282724A (ja) | 2002-03-27 | 2003-10-03 | Sanyo Electric Co Ltd | 半導体装置 |
JP2006525749A (ja) | 2003-05-05 | 2006-11-09 | クリー マイクロウエイブ リミテッド ライアビリティ カンパニー | 不均等入力電力分割を用いた増加されたバックオフ能力および電力付加効率を持つnウェイrf電力増幅器回路 |
WO2008035396A1 (fr) | 2006-09-19 | 2008-03-27 | Panasonic Corporation | Appareil d'amplification de puissance |
JP2012199746A (ja) | 2011-03-22 | 2012-10-18 | Nec Corp | ドハティ増幅器及びドハティ増幅器のバイアス設定方法 |
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US12009788B2 (en) | 2024-06-11 |
EP3949116A1 (en) | 2022-02-09 |
JP2022527051A (ja) | 2022-05-30 |
US20200313624A1 (en) | 2020-10-01 |
WO2020197852A1 (en) | 2020-10-01 |
CN113647015A (zh) | 2021-11-12 |
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