TW430795B - Ferroelectric random access memory device with an improved reliability - Google Patents
Ferroelectric random access memory device with an improved reliabilityInfo
- Publication number
- TW430795B TW430795B TW087112953A TW87112953A TW430795B TW 430795 B TW430795 B TW 430795B TW 087112953 A TW087112953 A TW 087112953A TW 87112953 A TW87112953 A TW 87112953A TW 430795 B TW430795 B TW 430795B
- Authority
- TW
- Taiwan
- Prior art keywords
- ferroelectric
- plate
- line
- random access
- access memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970046199A KR100297874B1 (ko) | 1997-09-08 | 1997-09-08 | 강유전체랜덤액세스메모리장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW430795B true TW430795B (en) | 2001-04-21 |
Family
ID=19520995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087112953A TW430795B (en) | 1997-09-08 | 1998-08-06 | Ferroelectric random access memory device with an improved reliability |
Country Status (5)
Country | Link |
---|---|
US (1) | US6198651B1 (zh) |
JP (2) | JP3986686B2 (zh) |
KR (1) | KR100297874B1 (zh) |
CN (1) | CN1112704C (zh) |
TW (1) | TW430795B (zh) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100297874B1 (ko) * | 1997-09-08 | 2001-10-24 | 윤종용 | 강유전체랜덤액세스메모리장치 |
KR100457346B1 (ko) * | 1997-11-27 | 2005-04-06 | 삼성전자주식회사 | 강유전체 랜덤 액세스 메모리 장치 |
JP3863330B2 (ja) | 1999-09-28 | 2006-12-27 | 株式会社東芝 | 不揮発性半導体メモリ |
KR100335133B1 (ko) * | 2000-01-28 | 2002-05-04 | 박종섭 | 불휘발성 강유전체 메모리 장치 및 그에 따른 구동방법 |
KR100425160B1 (ko) | 2001-05-28 | 2004-03-30 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 메모리 장치의 승압전압 발생회로 및그 발생방법 |
KR100463599B1 (ko) * | 2001-11-17 | 2004-12-29 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 메모리 장치 및 그의 구동방법 |
CN100345075C (zh) * | 2001-12-20 | 2007-10-24 | 松下电器产业株式会社 | 电位发生电路、电位发生装置和用它的半导体装置和其驱动方法 |
US6646904B2 (en) * | 2001-12-21 | 2003-11-11 | Intel Corporation | Ferroelectric memory and method of reading the same |
US6724653B1 (en) * | 2001-12-21 | 2004-04-20 | Kabushiki Kaisha Toshiba | Magnetic random access memory |
KR100412992B1 (ko) * | 2001-12-31 | 2003-12-31 | 주식회사 하이닉스반도체 | 강유전체 메모리 소자 |
US6972983B2 (en) * | 2002-03-21 | 2005-12-06 | Infineon Technologies Aktiengesellschaft | Increasing the read signal in ferroelectric memories |
KR100492800B1 (ko) * | 2002-11-12 | 2005-06-07 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 메모리 제어 장치 |
KR100583090B1 (ko) | 2003-05-30 | 2006-05-23 | 주식회사 하이닉스반도체 | 강유전체 레지스터의 캐패시터 제조방법 |
KR100518581B1 (ko) * | 2003-06-11 | 2005-10-04 | 삼성전자주식회사 | 별도의 기준 전압 발생기 없이 비트 셀 데이터를 출력하는반도체 메모리 장치, 및 그 방법 |
KR100568866B1 (ko) * | 2004-02-09 | 2006-04-10 | 삼성전자주식회사 | 강유전체 메모리에서 기준전압 발생장치 및 그에 따른구동방법 |
CN101118784A (zh) * | 2007-09-06 | 2008-02-06 | 复旦大学 | 一种电阻随机存储器的复位操作方法 |
US7667997B2 (en) * | 2007-12-27 | 2010-02-23 | Texas Instruments Incorporated | Method to improve ferroelectronic memory performance and reliability |
KR101783873B1 (ko) * | 2010-10-12 | 2017-10-11 | 삼성전자주식회사 | 데이터 감지를 위한 반도체 메모리 장치 |
US8300446B2 (en) | 2010-12-13 | 2012-10-30 | Texas Instruments Incorporated | Ferroelectric random access memory with single plate line pulse during read |
US8756558B2 (en) * | 2012-03-30 | 2014-06-17 | Texas Instruments Incorporated | FRAM compiler and layout |
US10037071B2 (en) | 2015-02-25 | 2018-07-31 | Texas Instruments Incorporated | Compute through power loss approach for processing device having nonvolatile logic memory |
US9460770B1 (en) | 2015-09-01 | 2016-10-04 | Micron Technology, Inc. | Methods of operating ferroelectric memory cells, and related ferroelectric memory cells |
US10452594B2 (en) | 2015-10-20 | 2019-10-22 | Texas Instruments Incorporated | Nonvolatile logic memory for computing module reconfiguration |
US10331203B2 (en) | 2015-12-29 | 2019-06-25 | Texas Instruments Incorporated | Compute through power loss hardware approach for processing device having nonvolatile logic memory |
US10083731B2 (en) * | 2016-03-11 | 2018-09-25 | Micron Technology, Inc | Memory cell sensing with storage component isolation |
US9721638B1 (en) | 2016-05-10 | 2017-08-01 | Micron Technology, Inc. | Boosting a digit line voltage for a write operation |
EP3507804A4 (en) * | 2016-08-31 | 2020-07-15 | Micron Technology, INC. | FERROELECTRIC STORAGE CELLS |
EP3507805A4 (en) | 2016-08-31 | 2020-06-03 | Micron Technology, Inc. | DEVICES AND METHOD WITH FERROELECTRIC MEMORY AND FOR OPERATING FERROELECTRIC MEMORY |
CN107945831B (zh) * | 2016-10-12 | 2020-09-18 | 北京兆易创新科技股份有限公司 | 减小nand闪存编程建立时间的电路和nand闪存 |
US10867675B2 (en) | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
US10410721B2 (en) * | 2017-11-22 | 2019-09-10 | Micron Technology, Inc. | Pulsed integrator and memory techniques |
US10586583B2 (en) * | 2018-03-08 | 2020-03-10 | Cypress Semiconductor Corporation | Ferroelectric random access memory sensing scheme |
US10600468B2 (en) * | 2018-08-13 | 2020-03-24 | Wuxi Petabyte Technologies Co, Ltd. | Methods for operating ferroelectric memory cells each having multiple capacitors |
CN110428858B (zh) * | 2019-07-11 | 2021-09-24 | 清华大学 | 基于具有滞回特性器件的静态存储器 |
KR102405521B1 (ko) * | 2021-01-06 | 2022-06-03 | 연세대학교 산학협력단 | 강유전체 메모리 장치 및 이의 리드/라이트 방법 |
CN117524274A (zh) * | 2022-07-28 | 2024-02-06 | 华为技术有限公司 | 铁电随机存储器和电子设备 |
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KR100297874B1 (ko) * | 1997-09-08 | 2001-10-24 | 윤종용 | 강유전체랜덤액세스메모리장치 |
-
1997
- 1997-09-08 KR KR1019970046199A patent/KR100297874B1/ko not_active IP Right Cessation
-
1998
- 1998-08-06 TW TW087112953A patent/TW430795B/zh not_active IP Right Cessation
- 1998-09-08 JP JP25432398A patent/JP3986686B2/ja not_active Expired - Lifetime
- 1998-09-08 US US09/149,366 patent/US6198651B1/en not_active Expired - Lifetime
- 1998-09-08 CN CN98117489A patent/CN1112704C/zh not_active Expired - Fee Related
-
2007
- 2007-04-23 JP JP2007113399A patent/JP2007242228A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR100297874B1 (ko) | 2001-10-24 |
KR19990024829A (ko) | 1999-04-06 |
CN1112704C (zh) | 2003-06-25 |
US6198651B1 (en) | 2001-03-06 |
JPH11176169A (ja) | 1999-07-02 |
JP3986686B2 (ja) | 2007-10-03 |
JP2007242228A (ja) | 2007-09-20 |
CN1211040A (zh) | 1999-03-17 |
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Legal Events
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GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |