TW430795B - Ferroelectric random access memory device with an improved reliability - Google Patents

Ferroelectric random access memory device with an improved reliability

Info

Publication number
TW430795B
TW430795B TW087112953A TW87112953A TW430795B TW 430795 B TW430795 B TW 430795B TW 087112953 A TW087112953 A TW 087112953A TW 87112953 A TW87112953 A TW 87112953A TW 430795 B TW430795 B TW 430795B
Authority
TW
Taiwan
Prior art keywords
ferroelectric
plate
line
random access
access memory
Prior art date
Application number
TW087112953A
Other languages
English (en)
Inventor
Jin-Woo Lee
Ki-Nam Kim
Dong-Jin Jung
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW430795B publication Critical patent/TW430795B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
TW087112953A 1997-09-08 1998-08-06 Ferroelectric random access memory device with an improved reliability TW430795B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970046199A KR100297874B1 (ko) 1997-09-08 1997-09-08 강유전체랜덤액세스메모리장치

Publications (1)

Publication Number Publication Date
TW430795B true TW430795B (en) 2001-04-21

Family

ID=19520995

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087112953A TW430795B (en) 1997-09-08 1998-08-06 Ferroelectric random access memory device with an improved reliability

Country Status (5)

Country Link
US (1) US6198651B1 (zh)
JP (2) JP3986686B2 (zh)
KR (1) KR100297874B1 (zh)
CN (1) CN1112704C (zh)
TW (1) TW430795B (zh)

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CN107945831B (zh) * 2016-10-12 2020-09-18 北京兆易创新科技股份有限公司 减小nand闪存编程建立时间的电路和nand闪存
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US10600468B2 (en) * 2018-08-13 2020-03-24 Wuxi Petabyte Technologies Co, Ltd. Methods for operating ferroelectric memory cells each having multiple capacitors
CN110428858B (zh) * 2019-07-11 2021-09-24 清华大学 基于具有滞回特性器件的静态存储器
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CN117524274A (zh) * 2022-07-28 2024-02-06 华为技术有限公司 铁电随机存储器和电子设备

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Also Published As

Publication number Publication date
JPH11176169A (ja) 1999-07-02
CN1112704C (zh) 2003-06-25
JP3986686B2 (ja) 2007-10-03
US6198651B1 (en) 2001-03-06
KR100297874B1 (ko) 2001-10-24
JP2007242228A (ja) 2007-09-20
CN1211040A (zh) 1999-03-17
KR19990024829A (ko) 1999-04-06

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