TW428320B - Thin film transistor and display device - Google Patents

Thin film transistor and display device

Info

Publication number
TW428320B
TW428320B TW088102516A TW88102516A TW428320B TW 428320 B TW428320 B TW 428320B TW 088102516 A TW088102516 A TW 088102516A TW 88102516 A TW88102516 A TW 88102516A TW 428320 B TW428320 B TW 428320B
Authority
TW
Taiwan
Prior art keywords
film
source electrode
thin film
film transistor
source
Prior art date
Application number
TW088102516A
Other languages
English (en)
Inventor
Keiichi Sano
Yasuo Segawa
Norio Tabuchi
Tsutomu Yamada
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Application granted granted Critical
Publication of TW428320B publication Critical patent/TW428320B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0275—Details of drivers for data electrodes, other than drivers for liquid crystal, plasma or OLED displays, not related to handling digital grey scale data or to communication of data to the pixels by means of a current
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3685—Details of drivers for data electrodes
    • G09G3/3688—Details of drivers for data electrodes suitable for active matrices only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
TW088102516A 1998-06-03 1999-02-22 Thin film transistor and display device TW428320B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15483598A JP3433101B2 (ja) 1998-06-03 1998-06-03 表示装置

Publications (1)

Publication Number Publication Date
TW428320B true TW428320B (en) 2001-04-01

Family

ID=15592931

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088102516A TW428320B (en) 1998-06-03 1999-02-22 Thin film transistor and display device

Country Status (4)

Country Link
US (1) US6628363B1 (zh)
JP (1) JP3433101B2 (zh)
KR (1) KR100610704B1 (zh)
TW (1) TW428320B (zh)

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JP2001109399A (ja) * 1999-10-04 2001-04-20 Sanyo Electric Co Ltd カラー表示装置
JP2001318627A (ja) 2000-02-29 2001-11-16 Semiconductor Energy Lab Co Ltd 発光装置
JP5148032B2 (ja) * 2000-08-09 2013-02-20 株式会社ジャパンディスプレイイースト アクティブマトリクス型表示装置
US7030847B2 (en) 2000-11-07 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
US7061451B2 (en) 2001-02-21 2006-06-13 Semiconductor Energy Laboratory Co., Ltd, Light emitting device and electronic device
US20020197393A1 (en) * 2001-06-08 2002-12-26 Hideaki Kuwabara Process of manufacturing luminescent device
US6901064B2 (en) * 2002-01-10 2005-05-31 Harris Corporation Method and device for establishing communication links and detecting interference between mobile nodes in a communication system
WO2005022262A1 (en) * 2003-08-28 2005-03-10 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method for thin film transistor and manufacturing method for display device
US20050116615A1 (en) * 2003-09-30 2005-06-02 Shoichiro Matsumoto Light emissive display device
US7407843B2 (en) * 2004-04-23 2008-08-05 Sharp Laboratories Of America, Inc. Four-transistor Schmitt trigger inverter
US20060166415A1 (en) * 2004-06-07 2006-07-27 Sharp Laboratories Of America, Inc. Two-transistor tri-state inverter
US7532187B2 (en) * 2004-09-28 2009-05-12 Sharp Laboratories Of America, Inc. Dual-gate transistor display
US20060068532A1 (en) * 2004-09-28 2006-03-30 Sharp Laboratories Of America, Inc. Dual-gate thin-film transistor
US8786793B2 (en) * 2007-07-27 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP5443588B2 (ja) * 2010-06-22 2014-03-19 パナソニック株式会社 発光表示装置及びその製造方法
TWI438868B (zh) 2010-07-30 2014-05-21 Au Optronics Corp 互補金氧半電晶體及其製作方法
US9466618B2 (en) * 2011-05-13 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including two thin film transistors and method of manufacturing the same
EP2911204A1 (en) 2014-02-19 2015-08-26 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Bottom gate thin film transistor device and circuit
US10032924B2 (en) * 2014-03-31 2018-07-24 The Hong Kong University Of Science And Technology Metal oxide thin film transistor with channel, source and drain regions respectively capped with covers of different gas permeability
JP2017034060A (ja) * 2015-07-31 2017-02-09 株式会社ジャパンディスプレイ 半導体装置及び表示装置
KR20170109182A (ko) * 2016-03-18 2017-09-28 삼성디스플레이 주식회사 박막트랜지스터와 제조 방법, 및 이를 포함하는 유기 발광 표시 장치
CN105742364A (zh) * 2016-04-12 2016-07-06 中山大学 一种抑制有源沟道区光致漏电流产生的mos管及应用
US10504939B2 (en) 2017-02-21 2019-12-10 The Hong Kong University Of Science And Technology Integration of silicon thin-film transistors and metal-oxide thin film transistors
EP3460853A1 (en) * 2017-09-26 2019-03-27 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO High voltage thin-film transistor and method of manufacturing the same
CN111081639B (zh) * 2019-12-05 2022-05-31 深圳市华星光电半导体显示技术有限公司 Cmos薄膜晶体管及其制备方法、显示面板

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KR950001360B1 (ko) * 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JPH0572562A (ja) 1991-09-18 1993-03-26 Seiko Epson Corp アクテイブマトリクス型表示装置
US5576857A (en) * 1992-04-02 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device with transistors and capacitors method of driving the same
JP2924506B2 (ja) 1992-10-27 1999-07-26 日本電気株式会社 アクティブマトリックス型液晶表示装置の画素構造
JP3281700B2 (ja) 1993-12-22 2002-05-13 三菱電機株式会社 半導体装置
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JPH07302912A (ja) 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd 半導体装置
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
JPH08122768A (ja) 1994-10-19 1996-05-17 Sony Corp 表示装置
JPH08264790A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 薄膜電解効果トランジスタ及び液晶表示装置
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JP3409542B2 (ja) 1995-11-21 2003-05-26 ソニー株式会社 半導体装置の製造方法
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Also Published As

Publication number Publication date
US6628363B1 (en) 2003-09-30
KR20000005816A (ko) 2000-01-25
JPH11354799A (ja) 1999-12-24
JP3433101B2 (ja) 2003-08-04
KR100610704B1 (ko) 2006-08-09

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Legal Events

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GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent