KR100610704B1 - 박막 트랜지스터 및 표시 장치 - Google Patents
박막 트랜지스터 및 표시 장치 Download PDFInfo
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- KR100610704B1 KR100610704B1 KR1019990020108A KR19990020108A KR100610704B1 KR 100610704 B1 KR100610704 B1 KR 100610704B1 KR 1019990020108 A KR1019990020108 A KR 1019990020108A KR 19990020108 A KR19990020108 A KR 19990020108A KR 100610704 B1 KR100610704 B1 KR 100610704B1
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- 239000010409 thin film Substances 0.000 title claims abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 60
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims abstract description 29
- 239000011229 interlayer Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 108090000699 N-Type Calcium Channels Proteins 0.000 claims description 23
- 108091006146 Channels Proteins 0.000 claims description 21
- 102000004129 N-Type Calcium Channels Human genes 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 abstract description 16
- 150000002500 ions Chemical class 0.000 abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 3
- 238000005401 electroluminescence Methods 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0275—Details of drivers for data electrodes, other than drivers for liquid crystal, plasma or OLED displays, not related to handling digital grey scale data or to communication of data to the pixels by means of a current
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3685—Details of drivers for data electrodes
- G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (6)
- 절연성 기판 상에, 게이트 전극, 게이트 절연막, n형 채널과 소스 및 드레인을 구비한 반도체막, 층간 절연막, 상기 반도체막의 소스에 접속되는 제1 전극 및 상기 제1 전극에 인가되는 전압 이상의 전압이 인가되고 상기 드레인에 접속되는 제2 전극, 및 평탄화 절연막이 순차적으로 형성되고,상기 제1 전극은 적어도 상기 n형 채널과 중첩하여 설치됨과 동시에, 상기 게이트 전극에는 박막 트랜지스터의 구동 기간중 대부분의 기간 동안 저전압이 인가되어 있는 것을 특징으로 하는 박막 트랜지스터.
- 삭제
- 절연성 기판 상에, 게이트 전극, 게이트 절연막, p형 채널과 소스 및 드레인을 구비한 반도체막, 층간 절연막, 상기 반도체막의 드레인에 접속되는 제2 전극 및 상기 제2 전극에 인가되는 전압 이상의 전압이 인가되고 상기 소스에 접속되는 제1 전극, 및 평탄화 절연막이 순차적으로 형성되고,상기 제1 전극은 적어도 상기 p형 채널과 중첩하여 설치됨과 동시에, 상기 게이트 전극에는 박막 트랜지스터의 구동 기간중 대부분의 기간 동안 고전압이 인가되어 있는 것을 특징으로 하는 박막 트랜지스터.
- 삭제
- 제1항 또는 제3항에 기재된 박막 트랜지스터를 구비한 것을 특징으로 하는 표시 장치.
- 절연성 기판 상에, 게이트 전극, 게이트 절연막, n형 채널과 소스 및 드레인을 구비한 반도체막, 층간 절연막, 상기 반도체막의 소스에 접속되는 소스 전극 및 상기 소스 전극에 인가되는 전압 이상의 전압이 인가되고 상기 드레인에 접속되는 드레인 전극, 및 상기 드레인 전극 및 상기 소스 전극 상에 형성된 평탄화 절연막이 순차적으로 형성되는 n형 박막 트랜지스터와, 게이트 전극, 게이트 절연막, p형 채널과 소스 및 드레인을 구비한 반도체막, 층간 절연막, 상기 반도체막의 드레인에 접속되는 드레인 전극 및 상기 드레인 전극에 인가되는 전압 이상의 전압이 인가되고 상기 소스에 접속되는 소스 전극, 상기 소스 전극 및 상기 드레인 전극 상에 형성된 평탄화 절연막이 순차적으로 형성되는 p형 박막 트랜지스터를 구비하는 인버터 회로를 포함하는 표시 장치로서,상기 n형 박막 트랜지스터와 상기 p형 박막 트랜지스터는 상기 게이트 전극 및 상기 드레인 전극을 각각 공통으로 하고, 상기 각 소스 전극이 각각 다른 전원에 접속된 인버터 회로 구성을 이루고,상기 n형 박막 트랜지스터와 상기 p형 박막 트랜지스터 중 적어도 공통하는 상기 게이트 전극에 인가되는 전압으로서, 상기 n형 박막 트랜지스터 또는 상기 p형 박막 트랜지스터가 오프 상태로 되는 오프 전압이, 상기 n형 박막 트랜지스터 또는 상기 p형 박막 트랜지스터가 온 상태로 되는 온 전압보다도 장기간 인가되는 형태의 박막 트랜지스터의 소스 전극이, 대응하는 박막 트랜지스터의 채널 형성 영역과 중첩되도록 연장되어 있는 것을 특징으로 하는 표시 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15483598A JP3433101B2 (ja) | 1998-06-03 | 1998-06-03 | 表示装置 |
JP1998-154835 | 1998-06-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000005816A KR20000005816A (ko) | 2000-01-25 |
KR100610704B1 true KR100610704B1 (ko) | 2006-08-09 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019990020108A KR100610704B1 (ko) | 1998-06-03 | 1999-06-02 | 박막 트랜지스터 및 표시 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6628363B1 (ko) |
JP (1) | JP3433101B2 (ko) |
KR (1) | KR100610704B1 (ko) |
TW (1) | TW428320B (ko) |
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JP2001109399A (ja) * | 1999-10-04 | 2001-04-20 | Sanyo Electric Co Ltd | カラー表示装置 |
JP2001318627A (ja) | 2000-02-29 | 2001-11-16 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP5148032B2 (ja) * | 2000-08-09 | 2013-02-20 | 株式会社ジャパンディスプレイイースト | アクティブマトリクス型表示装置 |
US7030847B2 (en) | 2000-11-07 | 2006-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
US7061451B2 (en) | 2001-02-21 | 2006-06-13 | Semiconductor Energy Laboratory Co., Ltd, | Light emitting device and electronic device |
US20020197393A1 (en) * | 2001-06-08 | 2002-12-26 | Hideaki Kuwabara | Process of manufacturing luminescent device |
US6901064B2 (en) * | 2002-01-10 | 2005-05-31 | Harris Corporation | Method and device for establishing communication links and detecting interference between mobile nodes in a communication system |
WO2005022262A1 (en) * | 2003-08-28 | 2005-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, manufacturing method for thin film transistor and manufacturing method for display device |
US20050116615A1 (en) * | 2003-09-30 | 2005-06-02 | Shoichiro Matsumoto | Light emissive display device |
US20060068532A1 (en) * | 2004-09-28 | 2006-03-30 | Sharp Laboratories Of America, Inc. | Dual-gate thin-film transistor |
US7532187B2 (en) * | 2004-09-28 | 2009-05-12 | Sharp Laboratories Of America, Inc. | Dual-gate transistor display |
US7407843B2 (en) * | 2004-04-23 | 2008-08-05 | Sharp Laboratories Of America, Inc. | Four-transistor Schmitt trigger inverter |
US20060166415A1 (en) * | 2004-06-07 | 2006-07-27 | Sharp Laboratories Of America, Inc. | Two-transistor tri-state inverter |
US8786793B2 (en) * | 2007-07-27 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
JP5443588B2 (ja) * | 2010-06-22 | 2014-03-19 | パナソニック株式会社 | 発光表示装置及びその製造方法 |
TWI438868B (zh) | 2010-07-30 | 2014-05-21 | Au Optronics Corp | 互補金氧半電晶體及其製作方法 |
US9466618B2 (en) * | 2011-05-13 | 2016-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including two thin film transistors and method of manufacturing the same |
EP2911204A1 (en) | 2014-02-19 | 2015-08-26 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Bottom gate thin film transistor device and circuit |
US10032924B2 (en) * | 2014-03-31 | 2018-07-24 | The Hong Kong University Of Science And Technology | Metal oxide thin film transistor with channel, source and drain regions respectively capped with covers of different gas permeability |
JP2017034060A (ja) * | 2015-07-31 | 2017-02-09 | 株式会社ジャパンディスプレイ | 半導体装置及び表示装置 |
KR20170109182A (ko) * | 2016-03-18 | 2017-09-28 | 삼성디스플레이 주식회사 | 박막트랜지스터와 제조 방법, 및 이를 포함하는 유기 발광 표시 장치 |
CN105742364A (zh) * | 2016-04-12 | 2016-07-06 | 中山大学 | 一种抑制有源沟道区光致漏电流产生的mos管及应用 |
US10504939B2 (en) | 2017-02-21 | 2019-12-10 | The Hong Kong University Of Science And Technology | Integration of silicon thin-film transistors and metal-oxide thin film transistors |
EP3460853A1 (en) * | 2017-09-26 | 2019-03-27 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | High voltage thin-film transistor and method of manufacturing the same |
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1998
- 1998-06-03 JP JP15483598A patent/JP3433101B2/ja not_active Expired - Lifetime
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1999
- 1999-02-22 TW TW088102516A patent/TW428320B/zh not_active IP Right Cessation
- 1999-06-02 KR KR1019990020108A patent/KR100610704B1/ko not_active IP Right Cessation
- 1999-06-02 US US09/324,138 patent/US6628363B1/en not_active Expired - Lifetime
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JPH0572562A (ja) * | 1991-09-18 | 1993-03-26 | Seiko Epson Corp | アクテイブマトリクス型表示装置 |
KR19990063153A (ko) * | 1997-12-18 | 1999-07-26 | 이데이 노부유끼 | 박막 반도체 장치 및 표시 장치 |
Also Published As
Publication number | Publication date |
---|---|
JP3433101B2 (ja) | 2003-08-04 |
US6628363B1 (en) | 2003-09-30 |
KR20000005816A (ko) | 2000-01-25 |
JPH11354799A (ja) | 1999-12-24 |
TW428320B (en) | 2001-04-01 |
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