TW409377B - Small scale ball grid array package - Google Patents

Small scale ball grid array package Download PDF

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Publication number
TW409377B
TW409377B TW088108359A TW88108359A TW409377B TW 409377 B TW409377 B TW 409377B TW 088108359 A TW088108359 A TW 088108359A TW 88108359 A TW88108359 A TW 88108359A TW 409377 B TW409377 B TW 409377B
Authority
TW
Taiwan
Prior art keywords
copper foil
grid array
ball grid
array package
hole
Prior art date
Application number
TW088108359A
Other languages
English (en)
Inventor
Jian-Ping Huang
Tzung-Da He
Wen-Rung Jiang
Original Assignee
Siliconware Precision Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconware Precision Industries Co Ltd filed Critical Siliconware Precision Industries Co Ltd
Priority to TW088108359A priority Critical patent/TW409377B/zh
Priority to US09/383,835 priority patent/US6218731B1/en
Application granted granted Critical
Publication of TW409377B publication Critical patent/TW409377B/zh

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    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

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4566t w 170 〇2 409377 A7 —----— —----§Z.____ 五、發明說明（/ ) 本發明是有關於-種小型球柵陣列式封裝件，且特別 是有關於一種可以改善散熱效能及電性之小型球柵陣列式 封裝件。 半導體產品發展至今’實已深入每個人的生活中，無 論食衣住行冃樂均有半導體產品之運用。然而半導體產品 在經過半導體廠複雜之製程’而獲得晶圓或晶片之半成 口口，吊吊3S而經過封s^(package)的步驟，透過—適當承載 器（Carrier)及包裝，才能應闬於最後之電子產品上。一般 實裝技術可大略分爲幾階段： L承載器(―)之軸：依議品之需求選擇適當之 晶片承載器，比如導線架(LeadFrame)、軟片式承載器(film carder)或積層板（Laminate Substrate)等。 2. 晶片與承載器之電性接合：目前之技術包括打導線 (wire bonding) '軟片自動接合（TAB)及覆晶技術（mp chip) ° 3. 包裝及成型：將晶片及晶片與承載器接合部份以樹 脂、陶瓷或其他包裝材質覆蓋，以保護元件及接合部份。 由於半導體技術日新月異，積集度不斷提高，如今線 寬0.18 micron的生產技術已能量產，許多技術無不朝向 「輕、薄、短、小」的趨勢進展’構裝技術亦不例外。p余 此之外’對於將來操作頻率愈來愈高的電子元件而言，如 何在封裝技術上改善高頻所產生之效應，以及解決散熱問 題，均是重要的課題。 請參照第1圖，其所繪示爲習知晶片上有導腳之封裝 3 (請先M\—讀背面之注意事項再填寫本頁) 裝--------訂:.---U-----^ 經濟部智慧財產局員工消費合作社印製 本紙張尺《過用中國國家標準（CNS)A4規格（2W X 297公釐） B7 409377 五、發明說明（二） 件結構剖面示意圖。晶片上有導腳（Lead 〇n Chip, LOC)之 封裝件結構，經常應用於薄小型封裝件中（Thin Small Outline Package，TSOP)。晶片上有導腳之封裝件結構所採 用之導線架24(Lead Frame)與常用之導線架有所不同，其 僅由多個導腳i〇所組成，而晶片Π具有焊墊16的表面14 直接與導腳10貼合，比如是以雙面膠片18(P〇lyimideTape；) 進行貼合。晶片I2之焊墊丨6係配置於表面I1靠近中央 的位置，分別以一導線2〇與導腳ίο連接。封裝％料22 則包覆晶片丨2、導線2〇及導腳10與焊墊I6連接的遮域， 以保護晶片Π與導線架24的連接。晶片上有導腳之封裝 .件結構中，由於省略晶片座(die pad)之設計’可以||小封 裝件之面積及體積；而晶片直接與導腳貼合，可以提供較 佳之散熱途徑。然而由於導線架本身製造上有間距（piteh) 的限制，對於將來高腳位數(high pin count)之元件，勢必 無法有效縮減體積，且對於高頻之電感效應亦無法有效角军 決。 請參照第2圖，其所繪示爲習知另一種晶片上有_脚 之封裝件結構剖面示意圖。第2圖中所示之封裝件锫__ .般又稱之爲小型球柵陣列式封裝件（Tiny BGA or Thin & Fine BGA, TFBGA)，其主要係採用BGA基板作爲承載器。 習知係採用單層BGA基板34，其係由一樹脂芯層3〇與〜 銅箔32壓合而成，而中央附近具有一孔洞42。銅箱32係 配置在樹脂芯層30的一表面1〇上’且已經過圖案化形成 導電跡線31(traCe)。晶片I2具有焊墊16的表面U直手妾 {請和閲讀背面之注意事項再填寫本頁) -------1 ^ ^^--------訂卜-----ί^- " 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1 4566IW 17002 409377 A7 B7 五、發明說明（彡） 與芯層30的另一表面38貼合，比如是以黏脾 、— 合。晶片12之焊墊1 6係配置於表面14靠近^ 進行貼 當晶片丨2與芯層3〇貼合時，焊墊10則位於孔失^的位置’ 而打導線的製程則在孔洞42的位置進行，^洞42中。 乂噚線？n y玄小曰 墊16與導電跡線3 1的近端3丨a連接。封杜、干 於孔洞42中及其附近之區域’以包覆導線 ^尤 3la與焊墊16連接的區域，保護晶片12 導電跡線 # 某板34 的電性連接，而晶片〖2周圍亦包覆封裝材料,、笔 晶片丨2與BGA基板34貼合的部分。導電_線3| 31b則植接有錫球36(s〇ider ball)’用以與外圾 $ 二 4界之導電跡線 連’比如連接印刷電路板之訊號接點。 雖然上述晶片上有導腳之封裝件結構以BGa基板取代. 習知導線架，可以縮小間距及封裝件體積。然而由於晶片 主要熱源來自具有半導體元件的表面，而此結構中具有元 件之表面是與芯層貼合，散熱效果不佳，因此無法有效解 決散熱問題，使得產品使用效能降低。另一方面由於BGa 基板中導電跡線間距較小，在高頻操作時，電感效應會愈 加明顯，訊號干擾愈加嚴重，影響產品效能。 因此本發明的之一目的就是在提供一種小型球概陣列 式封裝件結構，利用晶片直接與一銅箔貼合，以改善封裝 件之散熱效果。 本發明的另一目的就是在提供一種小型球柵陣列式封 裝件結構，利用增設一接地平面以縮減訊號路徑，減少訊 號千擾之發生。同時可以降低交互電感値，降低訊號延遲。 (請弁成"'1^-®之注意事項再填寫本頁) -"裝--------訂·!----"i!竣 經濟部智慧財產局員工消費合作社印製 未紙張尺度適用中國_家標準（CNS)A4規格（21〇 x 297公釐） 經濟部智慧財產局員工消費合作社印製 4 5 6 6 I w 1 / 0 f) 2_4Q98V7 b7_ 五、發明說明（V) 爲達成本發明之上述目的1提出一種小型球柵陣列式 封裝件，其建構於一基板上，基板係由至少一層絕緣層及 至少二層銅箔疊合而形成。而基板中央附近具有一孔洞， 銅箔中至少有一第二銅箔配置於基板之一表面，且已圖案 化形成多條導電跡線；而另有一第一銅箔，其部分表面外 露，並藉貫孔（Via)與導電跡線電性連接，用以接地 (Ground)，以形成接地平面（Ground Plane)。晶片在其一表 面中央附近配置多個焊墊，此表面與接地平面導熱地接 合，並使得焊墊位於孔洞中。焊墊分別與導電跡線之近端 以一導線導電地連接；而導電跡線之遠端則分別植接一銲 球。封裝材料則塡充於孔洞中並覆蓋孔洞之附近區域，以 保護焊墊、導線與導電跡線，且包覆晶片及與接地平面接 合之區域。 依照本發明的一較佳實施例，其中若基板爲二層板， 則第一銅箔與第二銅箔分別配置於基板之兩側；若基板爲 三層以上之積層板，則接地平面較佳是置於其他銅箔之 上。第一銅箔連接至接地，以構成一接地平面，可以縮短 導電跡線中訊號的迴流路徑，降低交互電感値。因此，本 發明之封裝件結構可以改善高頻操作時所衍生的電感效 應，訊號干擾及訊號延遲。此外，晶片具有元件之表面係 直接與接地平面貼合，可以提供晶片良好之散熱路徑。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 6 (請先閔讀背面之注意事項再填寫本頁) .一裂-------ί 訂·--—·------緯 _____^
Mr 本紙張尺度適用中囤國家標準（CNS)A4规格（210 X 297公釐） •45061WI7002 Λ7 409377 b7__ 五、發明說明（f ) 圖式之簡單說明： 第1圖所繪示爲習知晶片上有導腳之封裝件結構剖面 示意圖。 第2圖所繪示爲習知另一種晶片上有導腳之封裝件結 構剖面示意圖。 第3圖繪示依照本發明第一較佳實施例的一種小型球 柵陣列式封裝件剖面示意圖。 第3A圖所繪示爲依照本發明第一較佳實施例的一種 具晶片外露的小型球柵陣列式封裝件剖面示意圖。 第4圖繪示依照本發明第二較佳實施例的一種小型球 柵陣列式封裝件剖面示意圖。 第5圖繪示依照本發明第三較佳實施例的一種小型球 柵陣列式封裝件剖面示意圖。 圖式之標示說明： 10 :導腳 12、116 :晶片 14、1 18、132 :晶片表面 16、120 :焊墊 18 :貼帶 20 ' 124 :導線 22、126 :封裝材料 24 :導線架 30' 104' 148、150、164、168、172:樹脂芯層 32 、 102 、 106 、 142 、 144 、 146 、 162 、 166 、 170 、 174 : 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 請先閒讀背面之注意事項再填寫本頁) 裝-------訂--------綠” 經濟部智慧財產局員工消費合作社印製 f/()〇2 409377 A7 B7 經濟部智慧財產局員工消費合作杜印製 五、發明說明（&)銅箔 31、105、145、175 :導電跡線 31a、l〇5a、145a、175a :導電跡線近端 31b、lOSb、Η% ' i75b :導電跡線遠端 34 : BGA基板 36 :錫球 38、40 :芯層表面 42 :孔洞 44 =黏膠 100、]40、160 :基板 108 :金屬層110 :塡充材料 112 :貫孔Π4 :孔洞 :接合材料 128 :銲球 第一較佳實施例 請參照第3圖，其繪示依照本發明第一較佳實施例的 一種小型球柵陣列式封裝件剖面示意圖。本實施例中，BGA 基板係以—層銅箱之積層板（laminate substrate)爲例，一般 俗稱二層板’此種封裝件大部分用於腳位數較少之積體電 路元件。基板100係由一絕緣樹脂芯層104,第一銅箔102， 及第二銅箔106壓合而成，其中絕緣樹脂芯層104之材質 包括玻璃環氧基樹脂（FR-4、FR-5)，或雙順丁稀二酸醯 8 (I先閱讀背面之注意事項再填寫本頁) 裝------ ί 訂----Γ ό 本紙張尺度過用中國國豕標準（CNS)A4規格（2〗〇χ 297公髮） 4 5 6Mwl7〇f)： 409377 A7 4 5 6Mwl7〇f)： 409377 A7 經濟部智慧財產局員工消費合作社印製 -___B7_____ 五、發明說明（1 ) 亞胺（Bismaleimide-Triazine，BT)等。第二銅范 106 透過 微影蝕刻的製程，使之圖案化，以形成導電跡線105，而 銅箔102係透過一貫孔112(Wa)電性連接至導電跡線105 上，以連接接地形成接地平面。其中貫孔U2(via)係利用 塞孔製程來達成，貫孔112貫穿絕緣芯層104，其周緣並 鍍有一金屬層108，比如是銅，而貫孔112中央則塡充塞 孔材料11〇，藉由金屬層108使絕緣芯層104二面之銅箔 102、106得以連接。基板100靠近中央部分有一孔洞114 貫穿其中。晶片Π6具有元件（未繪示）之表面118，配置 有多個焊墊120，晶片丨16係以表面118與第一銅箔(接地 平面）1〇2接合，可以選擇導熱且具彈性之接合材料122(比 如銀膠或導熱膠帶），使晶片116固定於第一銅箔102上， 同時使得焊墊120位於孔洞114中。利用打導線的方式， 將焊墊120與導電跡線105的近端105a以導線124連接， 其中導線124材質包括金線、鋁線或銅線等。而導電跡線 105的遠端105b則分別植接一銲球128，其材質包括錫球 等。至於封裝材料126，則塡充於孔洞114中並覆蓋孔洞 之附近區域，以保護焊墊120、導線124與部分導電 跡線105a，並且包覆晶片116及與銅箔102接合之區域。 上述實施例之封裝件結構中，第一銅箔102可以透過 貫孔112、導電跡線105及銲球128連接至印刷電路板（Print Circuit Board，PCB)的接地接點(Ground)。此時第一銅箔102 形成一等電位平面，使得晶片116之訊號節點（signal node) 與接地平面之距離縮短，訊號迴流路徑隨之縮短，等效串 (請先閲讀背面之注意事項再填寫本頁)
本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 409377 A7 4 5(ιΜ\νΓ/{) 0 2 B7__ 五、發明說明（F) 聯電感（effective series inductance)因而降低，同時導電跡 線間的交互電感値（mutual inductance)也跟著減低。因此， 當晶片之操作頻率提高時’所衍生之電感效應’由於交互 電感値的降低而獲得改善，可以減少訊號干擾（noise)。此 外，由於訊號之傳播延遲（propagation delay)與導電跡線之 電感與電容有關’如下列公式所示： 'pa 因爲本發明之封裝件結構降低了電感値，同時亦縮短訊號 之傳播延遲’因此可以提高產品之效能（Perf〇rmance)。 再則，由於晶片Π6操作時熱量主要由表面118散發， 本發明ΐ將晶片116之表面118直接以導熱材料122與第 一銅箔102貼合，不但可以藉由第一銅箔1〇2散熱於外界， 亦可以藉由第一銅箔102、貫孔112、導電跡線1〇5及銲 球128將熱傳導至印刷電路板。因此，提供晶片較佳之散 熱路徑，可以提高產品之效能。當然，若欲更進一步提高 散熱效率，亦可以將晶片116背面132外露於封裝膠體126 外，如第3 Α圖所不。 u鉸佳實施例 請參照第4圖，其繪示依照本發明第二較佳實施例的 ―種小型球柵陣列式封裝件剖面示意圖。本實施例中，BGA 基板係以三層銅箔之積層板（丨aminate substrate)爲例，一般 俗稱三層板。基板1 40係由二絕緣芯靥148、1 50，第一銅 箔M2，第二銅箔！44 ’及第三銅箔M6壓合而成，其中 絕緣芯層148、150之材質包括FR-4、FR-5或BT等。第 I ϋ 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝-------- 訂--1-----象 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 45f,61、'彻2 409377 a? __B7__ 五、發明說明（7) 三銅箔146透過微影蝕刻的製程，使之圖案化，以形成導 電跡線丨45。此時作爲接地平面（ground plane)之銅箱較佳 是選擇配置於頂面的第一銅箔142。第二銅箔144則藉貫 孔（未圖示）電性連接至導電跡線145上，以連接電源 (power)，形成電源平面（power plane)，可以更有效降低銅 箔146上的導電跡線145的電感値。而第一銅箔142係透 過一貫孔112電性連接至導電跡線145，以連接接地。貫 孔112係由其周緣之導電金屬層1〇8，比如是銅，及中央 的塡充塞孔材料1 1 0構成，藉由金屬層108使貫孔1 1 2二 端之銅箔得以連接。 基板丨4〇靠近中央部分有一孔洞11.4貫穿其中，此時 孔洞Π4貫穿芯層148及150提供後續打導線的空間。晶 片1 16具有兀件（未繪示）之表面118，配置有多個焊墊120， 晶片II6係以表面118與第一銅箔142貼合，可以選擇導 熱且具彈性之接合材料122(比如銀膠或導熱膠帶），使晶 片1 16固定於銅箔142上，同時使得焊墊120位於孔洞114 中。利用打導線的方式，將焊墊120與導電跡線145的近 端145a以導線124連接，其中導線124材質包括金線、 鋁線或銅線等。而導電跡線145的遠端145b則分別植接 一銲球128，其材質包括錫球等。至於封裝材料126，則 塡充於孔洞1 Μ中並覆蓋孔洞114之附近區域，以保護焊 墊120、導線124與部分導電跡線145a，並且包覆晶片116 及與銅箔142貼合之區域 如第一實施例所述之原理，本實施例的結構亦具有與 本紙張尺埂適用+國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂V--- 線、 409377 A7 B7 經濟部智慧財產局員Η消費合作社印製 五、發明說明（⑺） 第一實施例之封裝件結構相同的特性，可以改善封裝件之 電性及散熱效率。於其他實施中，亦可第一銅箔142爲電 .源平面1第二銅箔144爲接地平面，亦能獲致相同的改善 電性及散熱之效果。 第三較佳實施例 請參照第5圖’其繪示依照本發明第三較佳實施例的 一種小型球柵陣列式封裝件剖面示意圖。本實施例中，bga 基板係以四層銅涪之積層板爲例，一般俗稱四層板。由於 二層板係現今量產之積層板單元，容易取得，上述之三層 板在二層板與銅箔之壓合上’施工較不易，成本亦較高， 若就成本上之考量亦可以四層板來取代。基板16〇係由三 絕緣芯層164 ' 168、172，第一銅箔162，第二銅箱166， 第二銅箔170，第四銅箔174疊合構成，—般可利用二個 —層板壓合而成。其中絕緣芯層164、108、172之材質包 括FR-4、FR-5或BT等。第四銅箔透過微影蝕刻的 製程’使之圖案化，以形成導電跡線175，第二銅箱166 亦使之圖案化以形成導電跡線，以增加訊號之輸入/輸出 點（I/O)，並透過貫孔（未繪示）與導電跡線175連接，構成 多層連線。然而，位於表面之第一銅箔162亦是一個極佳 之改熱路徑，可與晶片1 16連接，以散發晶片丨丨6所產生 之熱量’甚至可以連接一外部之散熱裝置，如散熱片等， 提闻散熱效果。此時作爲接地平面（ground plane)及電源平 面（power p|ane)之銅箔較佳是選擇爲第—及第三銅箱 1 62、Π0，因爲可以同時有效降低銅箔174及166上的導 #國國家辟（CNS)A4規格（210 X 297公楚） (請先閱讀背面之注意事項再填寫本頁) -ο裝 訂、—：-----線
V 經濟部智慧財產局員工消費合作社印製 45“ι'νΙ/0()2 409377 at _____B7____ 五、發明說明（if ) 電跡線的電感値。而第一銅箔102係透過貫孔112電性連 接至第四銅箔174，以連接接地，且第三銅箔170係透過 —貫孔II2電性連接至第四銅箔174，以連接電源。貫孔 112係由其周緣有之導電金屬層，比如是銅，及中央 的塡充塞孔材料110構成，藉由金屬層108使貫孔112二 端之銅箔得以連接。 基板160靠近中央部分有一孔洞114貫穿其中，此時 孔洞114貫穿芯層164、168及172提供後續打導線的空 間。晶片Π6具有元件（未繪示）之表面118，配置有多個 焊墊12〇，晶片116係以表面118與第一銅箔162貼合， 可以選擇導熱且具彈性之接合材料122(比如銀膠或導熱貼 帶），使晶片Π6固定於第一銅箔162上，同時使得焊墊120 位於孔洞114中。利用打導線的方式，將焊墊120與導電 跡線175的近端175a以導線124連接，其中導線124材 質包括金線、鋁線或銅線等。而導電跡線175的遠端175b 則分別植接一銲球Π8，其材質包括錫球等。至於封裝材 料126,則塡充於孔洞114中並覆蓋孔洞114之附近區域， 以保護焊墊120、導線124與部分導電跡線175a，並且包 覆晶片U6及與第一銅箱162貼合之區域。 如第一實施例所述之原理，本實施例的結構亦具有與 第一實施例之封裝件結構相同的特性，可以改善封裝件之 電性及散熱效率。對於腳位數較高之積體電路元件，通常 需多層銅箔及貫孔來形成立體的導電跡線網。此時如本實 施例所述，在銅箔之間配置一接地或電源平面將可顯著改 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------裝--- 一 I {請先閱讀背面之注意事項再填寫本頁) 訂· ir— 45 6 fit'vf/0 0 2 409377 A7 五、發明說明（ 善封裝件之電性，降低電感値減少訊號干擾，並改善散熱 效率，進而提昇產品之效能。於其他實施中，亦可第一銅 滔· 102爲電源平面，第三銅箔Π0爲接地平面，亦能獲致 相同的改善電性及散熱之效果。 綜上所述，本發明至少具有下列優點： 1. 本發明之小型球柵陣列式封裝件結構，利用晶片直 接與一銅箔貼合，將熱傳導至印刷電路板或大氣中，提供 良好散熱路徑’可以改善封裝件之散熱效果，提高產品效 能。 2. 本發明之小型球柵陣列式封裝件結構，利用增設一 接地平面或電源平面，鄰近具有訊號導電跡線之銅箱，以 縮減訊號迴流路徑，減少訊號干擾之發生。同時可以降低 交互電感値，降低訊號延遲，亦同時提高產品效能。 雖然本發明已以一較佳實施例揭露如上，然其逝非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之产 神和範圍內，當可作些許之更動與潤飾，因此本發明之^ 護範圍當視後附之申請專利範圍所界定者爲準。 (請先閱讀背面之注意事項再填寫本頁)
經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）

Claims (1)

  1. s 8 X nvo Λ ΒΓ D 六、申請專利範国 1. 一種小型球柵陣列式封裝件，包括： (請也閱請背Λ-Α意事項再填寫本頁 一基板，該基板係由一芯層、一第一銅箱及一第二銅 箔所構成，其中該第一銅箔及該第二銅箔分別配置於該芯 層的二面，該第二銅箔已圖案化形成複數條導電跡線，該 第一銅箔與該些導電跡線之一電性連接，而該基板中央附 近具有一孔洞； 一晶片，該晶片具有一第一表面與一第二表面，該第 一表面中央附近至少具有複數個焊墊，該晶片之該第一表 面與該第一銅箔接合，並使得該些焊墊位於該孔洞中，且 該些焊墊分別與該些導電跡線靠近該些焊墊之一近端以一 導線電性連接； 一封裝材料，塡充於該孔洞中並覆蓋該孔洞之附近區 域，以保護該些焊墊、該些導線與該些導電跡線，且包覆 該晶片及該晶片與該第一銅箔接合之區域；以及 複數個銲球，分別配置於該些導電跡線遠離該些焊墊 之一遠端。 2. 如申請專利範圍第1項所述之小型球柵陣列式封裝 件，其中與該第一銅箔連接之該導電跡線係接地。 經濟部智慧財產局S工消費合作社印製 3. 如申請專利範圍第1項所述之小型球柵陣列式封裝 件，其中該晶片之該第二表面外露於該封裝材料之外。 4. 如申請專利範圍第1項所述之小型球柵陣列式封裝 件，其中該芯層更包括至少一貫孔，該貫孔內緣具有一導 電金屬層，用以使得該第一銅箔與該些導電跡線之一電性 連接。 本紙朵尺度適用中國國家標準（CNS > Λ4覘格（210 X 297公釐） 4 5 6 (> t \ν Γ/ 0 0 2 409377 AS B8 Γ8 Γ〕8 r、申請專利範圍 5. 如申請專利範圍第1項所述之小型球柵陣列式封裝 件，其中該芯層之材質包括ΒΤ ' FR-4及FR-5其中之一 手軍° 6. 如申請專利範圍第1項所述之小型球柵陣列式封裝 件，其中該銲球包括錫球。 7. —種小型球柵陣列式封裝件，包括： 一基板，該基板係由複數層絕緣層、一第一銅箱、一 第二銅箔及一第三銅箔疊合而形成，相鄰之該第一銅箔、 該第二銅箔及該第三銅箔之間分別配置該些絕緣層之一， 其中該第三銅箔配置於該基板之一面，且該第三銅箔已圖 案化形成複數條導電跡線，該第一銅箔則配置於該基板之 另一面，並與該些導電跡線之一電性連接，該第二銅箔亦 與該些導電跡線之一電性連接，而該基板中央附近具有一 孔洞，該孔洞穿透該基板； 一晶片，該晶片具有一第一表面與一第二表面，該第 一表面中央附近至少具有複數個焊墊，該晶片之該第一表 面與該第一銅箔接合，並使得該些焊墊位於該孔洞中，且 該些焊墊分別與該些導電跡線靠近該些焊墊之一近端以一 導線電性連接； 一封裝材料，塡充於該孔洞中並覆蓋該孔洞之附近區 域，以保護該些焊墊、該些導線與該些導電跡線，且包覆 該晶片及該晶片與該第一銅箔接合之區域；以及 複數個銲球，分別配置於該些導電跡線遠離該些焊墊 之一遠端。 ]6 請也閲讀肾而之·;.ϊ·意事項再填寫表頁) 、τ 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐） 4 5 6 61 w 17 Ο Ο 2 409377 ΛΒΓ D 六、申請專利範圍 8. 如申請專利範圍第7項所述之小型球柵陣列式封裝 件，其中與該第一銅箔連接之該導電跡線係接地。 (請先閱讀"而·-^注意事項再填寫本頁} 9. 如申請專利範圍第7項所述之小型球柵陣列式封裝 件，其中與該第二銅箔連接之該導電跡線係連接電源。 10. 如申請專利範圍第7項所述之小型球柵陣列式封裝 件，其中該晶片之該第二表面外露於該封裝材料之外。 11. 如申請專利範圍第7項所述之小型球柵陣列式封裝 件，其中該些絕緣層分別包括至少一貫孔，該貫孔內緣具 有一導電金屬層，用以使得該第二銅箔與該些導電跡線之 一電性連接，並使得該第一銅箔與該些導電跡線之一電性 連接。 12. 如申請專利範圍第7項所述之小型球柵陣列式封裝 件，其中與該第二銅箔連接之該導電跡線係接地。 13. 如申請專利範圍第7項所述之小型球柵陣列式封裝 件，其中與該第一銅箔連接之該導電跡線係連接電源。 14. 如申請專利範圍第7項所述之小型球柵陣列式封裝 件，其中該些絕緣層之材質包括ΒΤ、FR-4及FR-5其中 之一種。 經濟部智慧財產局員工消費合作社印製 15. 如申請專利範圍第7項所述之小型球柵陣列式封裝 件，其中該些銲球包括錫球。 16. —種小型球柵陣列式封裝件，包括： 一基板，該基板係由複數層絕緣層、一第一銅箱、一 第二銅箔、一第三銅箔及一第四銅箔疊合而形成，相鄰之 該第一銅箔、該第二銅箔、該第三銅箔及該第四銅箔之間 本紙張尺度適用中國國家標準（CNS ) Α<4規格（210Χ297公釐） 4^661 w 170 0 2 409377 b? 六、申請專利範園 (請尤間讀背而·'"意事項再填寫木页) 分別配置該些絕緣層之一，其中該第四銅箔配置於該基板 .之一面，且該第四銅箔與該第二銅箔分別已圖案化形成複 數條導電跡線，該第一銅箔則配置於該基板之另一面，並 與該第四銅箔的該些導電跡線之一電性連接，該第二銅箔 及該第三銅箔亦與該第四銅箔的該些導電跡線之一電性連 接，而該基板中央附近具有一孔洞，該孔洞穿透該基板； 一晶片，該晶片具有一第一表面與一第二表面，該第 一表面中央附近至少具有複數個焊墊，該晶片之該第一表 面與該第一銅箔接合，並使得該些焊墊位於該孔洞中，且 該些焊墊分別與該第四銅箔的該些導電跡線靠近該些焊墊 之一近端以一導線電性連接； 一封裝材料，塡充於該孔洞中並覆蓋該孔洞之附近區 域，以保護該些焊墊、該些導線與該些導電跡線，且包覆 該晶片及該晶片與該第一銅箔接合之區域；以及 複數個銲球，分別配置於該第四銅箔的該些導電跡線 遠離該些焊墊之一遠端。 17. 如申請專利範圍第16項所述之小型球柵陣列式封 裝件，其中與該第一銅箔連接之該導電跡線係接地。 經濟部智慧財產局員工消費合作社印製 18. 如申請專利範圍第16項所述之小型球柵陣列式封 裝件，其中與該第三銅箔連接之該導電跡線係連接電源。 19. 如申請專利範圍第16項所述之小型球柵陣列式封 裝件，其中該晶片之該第二表面外露於該封裝材料之外。 20. 如申請專利範圍第16項所述之小型球柵陣列式封 裝件，其中該些絕緣層分別包括至少一貫孔，該貫孔內緣 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公;t ) Λ Β Γ D 4 5 6 61 \v 17 0 0 2 409377 六、申請專利範圍 具有一導電金屬層，用以使得該第一銅箔、該第二銅箔、 該第三銅箔與該第四銅箔間彼此電性連接。 21. 如申請專利範圍第16項所述之小型球柵陣列式封 裝件，其中與該第三銅箔連接之該導電跡線係接地。 22. 如申請專利範圍第16項所述之小型球柵陣列式封 裝件，其中與該第一銅箔連接之該導電跡線係連接電源。 23. 如申請專利範圍第16項所述之小型球柵陣列式封 裝件，其中該些絕緣層之材質包括BT、FR-4及FR-5其 中之一種。 24. 如申請專利範圍第16項所述之小型球柵陣列式封 裝件，其中該些銲球包括錫球。 (請·-閱請背而之a意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準{ CNS ) Α·4規格（210X297公釐）
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