TW382668B - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- TW382668B TW382668B TW085101635A TW85101635A TW382668B TW 382668 B TW382668 B TW 382668B TW 085101635 A TW085101635 A TW 085101635A TW 85101635 A TW85101635 A TW 85101635A TW 382668 B TW382668 B TW 382668B
- Authority
- TW
- Taiwan
- Prior art keywords
- power supply
- supply line
- line
- circuit
- power
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 187
- 239000003990 capacitor Substances 0.000 claims abstract description 113
- 239000000872 buffer Substances 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims description 128
- 238000003860 storage Methods 0.000 claims description 49
- 230000002079 cooperative effect Effects 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 22
- 238000012545 processing Methods 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 230000009471 action Effects 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 8
- 230000007246 mechanism Effects 0.000 claims description 8
- 238000001914 filtration Methods 0.000 claims description 6
- 230000005685 electric field effect Effects 0.000 claims description 5
- 238000001827 electrotherapy Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 2
- 235000015067 sauces Nutrition 0.000 claims description 2
- 229920000742 Cotton Polymers 0.000 claims 1
- 241000255925 Diptera Species 0.000 claims 1
- 241001247287 Pentalinon luteum Species 0.000 claims 1
- 230000008901 benefit Effects 0.000 claims 1
- 239000008280 blood Substances 0.000 claims 1
- 210000004369 blood Anatomy 0.000 claims 1
- 230000003139 buffering effect Effects 0.000 claims 1
- 235000013399 edible fruits Nutrition 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 13
- 238000010168 coupling process Methods 0.000 abstract description 13
- 238000005859 coupling reaction Methods 0.000 abstract description 13
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 63
- 239000012535 impurity Substances 0.000 description 62
- 239000010410 layer Substances 0.000 description 34
- 230000005540 biological transmission Effects 0.000 description 20
- 230000007423 decrease Effects 0.000 description 19
- 238000010521 absorption reaction Methods 0.000 description 16
- 210000004027 cell Anatomy 0.000 description 13
- 102100039435 C-X-C motif chemokine 17 Human genes 0.000 description 9
- 101000889048 Homo sapiens C-X-C motif chemokine 17 Proteins 0.000 description 9
- 239000003638 chemical reducing agent Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 230000000875 corresponding effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- RDYMFSUJUZBWLH-UHFFFAOYSA-N endosulfan Chemical compound C12COS(=O)OCC2C2(Cl)C(Cl)=C(Cl)C1(Cl)C2(Cl)Cl RDYMFSUJUZBWLH-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 101100079138 Arabidopsis thaliana NAC098 gene Proteins 0.000 description 1
- 206010011469 Crying Diseases 0.000 description 1
- 241000287227 Fringillidae Species 0.000 description 1
- 101000671620 Homo sapiens Usher syndrome type-1C protein-binding protein 1 Proteins 0.000 description 1
- 208000003251 Pruritus Diseases 0.000 description 1
- 102100040093 Usher syndrome type-1C protein-binding protein 1 Human genes 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
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- 210000003205 muscle Anatomy 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- XUIMIQQOPSSXEZ-RNFDNDRNSA-N silicon-32 atom Chemical compound [32Si] XUIMIQQOPSSXEZ-RNFDNDRNSA-N 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11898—Input and output buffer/driver structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01085796A JP3667855B2 (ja) | 1996-01-25 | 1996-01-25 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW382668B true TW382668B (en) | 2000-02-21 |
Family
ID=11762033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085101635A TW382668B (en) | 1996-01-25 | 1996-02-09 | Semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3667855B2 (ja) |
| KR (1) | KR100249991B1 (ja) |
| DE (1) | DE19700988C2 (ja) |
| TW (1) | TW382668B (ja) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10200051A (ja) | 1997-01-14 | 1998-07-31 | Canon Inc | 半導体集積回路 |
| DE19751540C1 (de) | 1997-11-20 | 1999-04-08 | Siemens Ag | Integrierte Halbleiterschaltung mit wenigstens zwei Versorgungsnetzen |
| US6522173B1 (en) | 1998-03-31 | 2003-02-18 | Kanji Otsuka | Electronic device |
| KR100498430B1 (ko) * | 1998-06-01 | 2006-01-27 | 삼성전자주식회사 | 다양한 외부 전원 전압의 사용이 가능한 동기식 반도체 메모리장치 |
| JP2997241B1 (ja) * | 1998-07-17 | 2000-01-11 | 株式会社半導体理工学研究センター | 低スイッチング雑音論理回路 |
| DE19855445C1 (de) * | 1998-12-01 | 2000-02-24 | Siemens Ag | Vorrichtung zur Verringerung der elektromagnetischen Emission bei integrierten Schaltungen mit Treiberstufen |
| DE19947021A1 (de) * | 1999-09-30 | 2001-04-19 | Infineon Technologies Ag | EMV-optimierte On-Chip-Stromversorgung |
| JP3509713B2 (ja) | 2000-07-26 | 2004-03-22 | 株式会社デンソー | 半導体集積回路装置及び半導体集積回路装置の回路ブロック搭載方法 |
| JP3969020B2 (ja) | 2001-06-15 | 2007-08-29 | 株式会社デンソー | 半導体集積回路装置 |
| AU2003201054A1 (en) * | 2002-01-12 | 2003-07-24 | Koninklijke Philips Electronics N.V. | Circuits with improved power supply rejection |
| JP4795670B2 (ja) * | 2004-06-18 | 2011-10-19 | 三星電子株式会社 | 共有ディカップリングキャパシタンス |
| JP4657640B2 (ja) * | 2004-07-21 | 2011-03-23 | 株式会社日立製作所 | 半導体装置 |
| JP5175597B2 (ja) * | 2007-11-12 | 2013-04-03 | エスケーハイニックス株式会社 | 半導体集積回路 |
| JP5552027B2 (ja) | 2010-11-01 | 2014-07-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP5153856B2 (ja) * | 2010-11-22 | 2013-02-27 | 株式会社日立製作所 | 半導体装置 |
| JP5710955B2 (ja) * | 2010-12-10 | 2015-04-30 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置 |
| JP5724934B2 (ja) * | 2011-07-05 | 2015-05-27 | 株式会社デンソー | 半導体装置 |
| CN108390586A (zh) * | 2018-04-13 | 2018-08-10 | 武汉华中华昌能源电气科技有限公司 | 一种强脉冲泵浦激光电源电路 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06101679B2 (ja) * | 1985-06-21 | 1994-12-12 | 株式会社日立製作所 | 半導体集積回路装置 |
| US5204554A (en) * | 1991-12-06 | 1993-04-20 | National Semiconductor Corporation | Partial isolation of power rails for output buffer circuits |
| JPH07153913A (ja) * | 1993-11-26 | 1995-06-16 | Sanyo Electric Co Ltd | 半導体装置 |
-
1996
- 1996-01-25 JP JP01085796A patent/JP3667855B2/ja not_active Expired - Fee Related
- 1996-02-09 TW TW085101635A patent/TW382668B/zh not_active IP Right Cessation
-
1997
- 1997-01-14 DE DE19700988A patent/DE19700988C2/de not_active Expired - Fee Related
- 1997-01-15 KR KR1019970000978A patent/KR100249991B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100249991B1 (ko) | 2000-03-15 |
| JPH09205357A (ja) | 1997-08-05 |
| DE19700988C2 (de) | 2002-01-17 |
| KR970060478A (ko) | 1997-08-12 |
| DE19700988A1 (de) | 1997-07-31 |
| JP3667855B2 (ja) | 2005-07-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |