TW368686B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TW368686B
TW368686B TW086119527A TW86119527A TW368686B TW 368686 B TW368686 B TW 368686B TW 086119527 A TW086119527 A TW 086119527A TW 86119527 A TW86119527 A TW 86119527A TW 368686 B TW368686 B TW 368686B
Authority
TW
Taiwan
Prior art keywords
diffused layer
oxide film
field oxide
breakdown voltage
moslsi
Prior art date
Application number
TW086119527A
Other languages
English (en)
Inventor
Arihide Yamamoto
Original Assignee
Nec Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Electronics Corp filed Critical Nec Electronics Corp
Application granted granted Critical
Publication of TW368686B publication Critical patent/TW368686B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H01L27/027Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW086119527A 1996-12-26 1997-12-22 Semiconductor device TW368686B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34782896A JP3144330B2 (ja) 1996-12-26 1996-12-26 半導体装置

Publications (1)

Publication Number Publication Date
TW368686B true TW368686B (en) 1999-09-01

Family

ID=18392884

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086119527A TW368686B (en) 1996-12-26 1997-12-22 Semiconductor device

Country Status (5)

Country Link
US (1) US5898206A (zh)
JP (1) JP3144330B2 (zh)
KR (1) KR100311578B1 (zh)
CN (1) CN1096710C (zh)
TW (1) TW368686B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3851738B2 (ja) 1999-01-29 2006-11-29 株式会社東芝 半導体装置
JP3317345B2 (ja) * 1999-07-23 2002-08-26 日本電気株式会社 半導体装置
KR100328836B1 (ko) * 1999-10-01 2002-03-15 박종섭 정전방전 보호부의 구조
JP3485087B2 (ja) * 1999-12-27 2004-01-13 セイコーエプソン株式会社 半導体装置
US6310380B1 (en) * 2000-03-06 2001-10-30 Chartered Semiconductor Manufacturing, Inc. Electrostatic discharge protection transistor structure with a trench extending through the source or drain silicide layers
DE10022366A1 (de) * 2000-05-08 2001-11-29 Micronas Gmbh ESD-Schutzstruktur
KR100712485B1 (ko) * 2000-06-14 2007-04-27 삼성전자주식회사 입력특성 향상을 위해 노이즈를 방지하기 위한 반도체집적회로
DE10041139A1 (de) * 2000-08-21 2002-03-14 Philips Corp Intellectual Pty Anordnung zur Verbesserung des ESD-Schutzes bei einem CMOS Buffer
JP2002261292A (ja) 2000-12-26 2002-09-13 Toshiba Corp 半導体装置及びその製造方法
US6815775B2 (en) * 2001-02-02 2004-11-09 Industrial Technology Research Institute ESD protection design with turn-on restraining method and structures
KR100393220B1 (ko) * 2001-03-23 2003-07-31 삼성전자주식회사 Esd 보호용 반도체 장치
US6703641B2 (en) * 2001-11-16 2004-03-09 International Business Machines Corporation Structure for detecting charging effects in device processing
KR100437856B1 (ko) * 2002-08-05 2004-06-30 삼성전자주식회사 모스 트랜지스터 및 이를 포함하는 반도체 장치의 형성방법.
US7244992B2 (en) * 2003-07-17 2007-07-17 Ming-Dou Ker Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection
KR100629436B1 (ko) * 2004-09-08 2006-09-27 매그나칩 반도체 유한회사 고전압 소자의 정전기 보호장치
JP4711061B2 (ja) * 2005-09-13 2011-06-29 セイコーエプソン株式会社 半導体装置
JP4950463B2 (ja) * 2005-09-14 2012-06-13 キヤノン株式会社 半導体装置
JP2009116206A (ja) * 2007-11-09 2009-05-28 Sony Corp El表示パネル及び電子機器
US7932577B2 (en) * 2007-12-31 2011-04-26 Silicon Laboratories, Inc. Circuit device and method of forming a circuit device having a reduced peak current density
JP6126489B2 (ja) * 2013-07-29 2017-05-10 キヤノン株式会社 記録素子基板、記録ヘッド及び記録装置
DE102016203906A1 (de) * 2016-03-10 2017-09-28 Robert Bosch Gmbh Halbleiterbauelement, insbesondere Leistungstransistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8900593A (nl) * 1989-03-13 1990-10-01 Philips Nv Halfgeleiderinrichting met een beveiligingsschakeling.
JPH0379080A (ja) * 1989-08-23 1991-04-04 New Japan Radio Co Ltd 高耐圧mosトランジスタ
JP2600621B2 (ja) * 1994-09-14 1997-04-16 日本電気株式会社 半導体装置の製造方法
US5604369A (en) * 1995-03-01 1997-02-18 Texas Instruments Incorporated ESD protection device for high voltage CMOS applications

Also Published As

Publication number Publication date
JP3144330B2 (ja) 2001-03-12
CN1186341A (zh) 1998-07-01
CN1096710C (zh) 2002-12-18
JPH10189756A (ja) 1998-07-21
KR100311578B1 (ko) 2001-11-30
US5898206A (en) 1999-04-27
KR19980064705A (ko) 1998-10-07

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