CN1186341A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1186341A CN1186341A CN97125880A CN97125880A CN1186341A CN 1186341 A CN1186341 A CN 1186341A CN 97125880 A CN97125880 A CN 97125880A CN 97125880 A CN97125880 A CN 97125880A CN 1186341 A CN1186341 A CN 1186341A
- Authority
- CN
- China
- Prior art keywords
- diffusion layer
- conductivity type
- layer
- trap
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 56
- 230000015556 catabolic process Effects 0.000 claims abstract description 20
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims description 177
- 239000002184 metal Substances 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 238000009413 insulation Methods 0.000 claims description 27
- 239000012535 impurity Substances 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 9
- 229910052914 metal silicate Inorganic materials 0.000 description 8
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- -1 phosphonium ion Chemical class 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP347828/96 | 1996-12-26 | ||
JP34782896A JP3144330B2 (ja) | 1996-12-26 | 1996-12-26 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1186341A true CN1186341A (zh) | 1998-07-01 |
CN1096710C CN1096710C (zh) | 2002-12-18 |
Family
ID=18392884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN97125880A Expired - Fee Related CN1096710C (zh) | 1996-12-26 | 1997-12-26 | 半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5898206A (zh) |
JP (1) | JP3144330B2 (zh) |
KR (1) | KR100311578B1 (zh) |
CN (1) | CN1096710C (zh) |
TW (1) | TW368686B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6919606B2 (en) | 2000-12-26 | 2005-07-19 | Kabushiki Kaisha Toshiba | Semiconductor device comprising an insulating mask formed on parts of a gate electrode and semiconductor layer crossing an active region |
US7463503B2 (en) | 2005-09-14 | 2008-12-09 | Canon Kabushiki Kaisha | Semiconductor device |
CN104339868A (zh) * | 2013-07-29 | 2015-02-11 | 佳能株式会社 | 打印元件基板、打印头和打印装置 |
CN107180859A (zh) * | 2016-03-10 | 2017-09-19 | 罗伯特·博世有限公司 | 半导体结构元件,尤其功率晶体管 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3851738B2 (ja) | 1999-01-29 | 2006-11-29 | 株式会社東芝 | 半導体装置 |
JP3317345B2 (ja) * | 1999-07-23 | 2002-08-26 | 日本電気株式会社 | 半導体装置 |
KR100328836B1 (ko) * | 1999-10-01 | 2002-03-15 | 박종섭 | 정전방전 보호부의 구조 |
JP3485087B2 (ja) * | 1999-12-27 | 2004-01-13 | セイコーエプソン株式会社 | 半導体装置 |
US6310380B1 (en) * | 2000-03-06 | 2001-10-30 | Chartered Semiconductor Manufacturing, Inc. | Electrostatic discharge protection transistor structure with a trench extending through the source or drain silicide layers |
DE10022366A1 (de) * | 2000-05-08 | 2001-11-29 | Micronas Gmbh | ESD-Schutzstruktur |
KR100712485B1 (ko) * | 2000-06-14 | 2007-04-27 | 삼성전자주식회사 | 입력특성 향상을 위해 노이즈를 방지하기 위한 반도체집적회로 |
DE10041139A1 (de) * | 2000-08-21 | 2002-03-14 | Philips Corp Intellectual Pty | Anordnung zur Verbesserung des ESD-Schutzes bei einem CMOS Buffer |
US6815775B2 (en) * | 2001-02-02 | 2004-11-09 | Industrial Technology Research Institute | ESD protection design with turn-on restraining method and structures |
KR100393220B1 (ko) * | 2001-03-23 | 2003-07-31 | 삼성전자주식회사 | Esd 보호용 반도체 장치 |
US6703641B2 (en) * | 2001-11-16 | 2004-03-09 | International Business Machines Corporation | Structure for detecting charging effects in device processing |
KR100437856B1 (ko) * | 2002-08-05 | 2004-06-30 | 삼성전자주식회사 | 모스 트랜지스터 및 이를 포함하는 반도체 장치의 형성방법. |
US7244992B2 (en) * | 2003-07-17 | 2007-07-17 | Ming-Dou Ker | Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection |
KR100629436B1 (ko) * | 2004-09-08 | 2006-09-27 | 매그나칩 반도체 유한회사 | 고전압 소자의 정전기 보호장치 |
JP4711061B2 (ja) * | 2005-09-13 | 2011-06-29 | セイコーエプソン株式会社 | 半導体装置 |
JP2009116206A (ja) * | 2007-11-09 | 2009-05-28 | Sony Corp | El表示パネル及び電子機器 |
US7932577B2 (en) * | 2007-12-31 | 2011-04-26 | Silicon Laboratories, Inc. | Circuit device and method of forming a circuit device having a reduced peak current density |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8900593A (nl) * | 1989-03-13 | 1990-10-01 | Philips Nv | Halfgeleiderinrichting met een beveiligingsschakeling. |
JPH0379080A (ja) * | 1989-08-23 | 1991-04-04 | New Japan Radio Co Ltd | 高耐圧mosトランジスタ |
JP2600621B2 (ja) * | 1994-09-14 | 1997-04-16 | 日本電気株式会社 | 半導体装置の製造方法 |
US5604369A (en) * | 1995-03-01 | 1997-02-18 | Texas Instruments Incorporated | ESD protection device for high voltage CMOS applications |
-
1996
- 1996-12-26 JP JP34782896A patent/JP3144330B2/ja not_active Expired - Fee Related
-
1997
- 1997-12-22 TW TW086119527A patent/TW368686B/zh active
- 1997-12-23 US US08/997,719 patent/US5898206A/en not_active Expired - Lifetime
- 1997-12-26 KR KR1019970074433A patent/KR100311578B1/ko not_active IP Right Cessation
- 1997-12-26 CN CN97125880A patent/CN1096710C/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6919606B2 (en) | 2000-12-26 | 2005-07-19 | Kabushiki Kaisha Toshiba | Semiconductor device comprising an insulating mask formed on parts of a gate electrode and semiconductor layer crossing an active region |
US7463503B2 (en) | 2005-09-14 | 2008-12-09 | Canon Kabushiki Kaisha | Semiconductor device |
CN100499126C (zh) * | 2005-09-14 | 2009-06-10 | 佳能株式会社 | 半导体器件 |
CN104339868A (zh) * | 2013-07-29 | 2015-02-11 | 佳能株式会社 | 打印元件基板、打印头和打印装置 |
CN104339868B (zh) * | 2013-07-29 | 2016-08-31 | 佳能株式会社 | 打印元件基板、打印头和打印装置 |
CN107180859A (zh) * | 2016-03-10 | 2017-09-19 | 罗伯特·博世有限公司 | 半导体结构元件,尤其功率晶体管 |
Also Published As
Publication number | Publication date |
---|---|
TW368686B (en) | 1999-09-01 |
JP3144330B2 (ja) | 2001-03-12 |
CN1096710C (zh) | 2002-12-18 |
JPH10189756A (ja) | 1998-07-21 |
KR100311578B1 (ko) | 2001-11-30 |
US5898206A (en) | 1999-04-27 |
KR19980064705A (ko) | 1998-10-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20041015 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20041015 Address after: Kanagawa, Japan Patentee after: NEC Corp. Address before: Tokyo, Japan Patentee before: NEC Corp. |
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C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER NAME: NEC CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
ASS | Succession or assignment of patent right |
Owner name: DESAILA ADVANCED TECHNOLOGY COMPANY Free format text: FORMER OWNER: RENESAS ELECTRONICS CORPORATION Effective date: 20141014 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20141014 Address after: American California Patentee after: Desella Advanced Technology Company Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20021218 Termination date: 20161226 |